• International Journal of Industrial Entomology and Biomaterials
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• 제37권2호
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• pp.36-42
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• 2018

Recently, silk sericin has attracted attention because of its unique properties as a biomaterial, including its UV resistance, moisturizing effect on skin, and wound-healing effect. Therefore, the preparation of sericin in various forms such as gel, film, fiber, and sponge is studied for cosmetic and biomedical applications, and the effect of the preparation conditions on the structure and properties of sericin forms is examined to maximize its performance. In this study, silk sericin films were prepared under different preparation conditions and heat-treated at high temperatures ($100-250^{\circ}C$) to examine the effect of heat treatment on the film structure. The order of the crystallinity index of the untreated sericin film is as follows: F25 (sericin film cast from formic acid) > WE25 (ethanol treated sericin film cast from water at $250^{\circ}C$) > W25 (sericin film cast from water at $250^{\circ}C$) > W100 (sericin film cast from water at $100^{\circ}C$). As the heat-treatment temperature was increased, the color of the sericin films changed gradually from colorless to yellow, brown, and black depending on the temperature. The crystallinity of the sericin film changed after the heat treatment, depending on the preparation condition. Whereas a sericin film cast from formic acid (F25) started to lose its crystallinity at $200^{\circ}C$, thus undergoing the highest loss of crystallinity among the sericin films studied, the rest (W25, WE25, and W100) showed a decrease in crystallinity at $250^{\circ}C$, owing to the disruption of the ${\beta}$-sheet crystallites due to heat.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.233-233
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• 2010

CdS thin films were deposited on glass substrates by R.F. magnetron sputtering method and some of the samples were treated by rapid thermal annealing (RTA) process. Effects of thermal annealing on structural and optical properties were investigated at different temperatures ranging from 100 to $600^{\circ}C$. The crystallographic structure of the films and the size of the crystallites in the films were studied by X-ray diffraction. The crystallite sizes were found to increase, and the X-ray diffraction patterns were seen to sharpen by annealing. Optical properties of the films were calculated using the envelope method and the photoluminescence measurements. The optical properties of the films were seen to be dependent on the film thicknesses. The energy gap of the films was found to decrease by annealing. The band edge sharpness of the optical absorption was seen to oscillate by thermal annealing. Annealing over $400^{\circ}C$ was seen to degrade the optical properties of the film. The best annealing temperature for the films was found to be $400^{\circ}C$ from the optical properties. It is observed that the CdS film annealed at $400^{\circ}C$ reveals the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied. The enhanced UV emission from the film annealed at $400^{\circ}C$ is attributed to the improved crystalline quality of CdS thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size. The results show that heat treatments under optimal annealing condition can provide significant improvements in the properties of CdS thin films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1016-1018
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• 1995

In this paper, we studied the electrical and the microwave properties of the amorphous $As_{10}Ge_{15}Te_{75}$ thin film. The electrical properties of a-$As_{10}Ge_{15}Te_{75}$ thin film were examined d.c. and a.c. bias with annealing condition. As the result of the electrical properties, we observed the physical characteristics of a-$As_{10}Ge_{15}Te_{75}$ thin film such as the density of defect states, characteristic relaxation time, localized density of states, and localized wave function by using CBH and QMT model. We also examined the microwave conduction properties before and after d.e. switching.

• 한국진공학회지
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• 제5권2호
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• pp.147-155
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• 1996

Optical properties of $TiO_2/M/Ag/M/TiO_2$ films have been changed with the diffusion barrier metal M. Optimum opticla properties of $TiO_2/M/Ag/M/TiO_2$ as the transparent heat mirror film, could be obtained with Ti among diffusion barrier metals of Ti, Cu, Zr and Al. $TiO_2/M/Ag/M/TiO_2$ film, which was fabricated by sputtering of 18 nm-thick $TiO_2$ and Ag, and 4nm-thick Ti, showed maximum transimittance of 89% at visible wavelength and infrared reflectance of 97% at wavelength of 3000 nm. Optical properties of this film was not degraded by Xenon-sunshine weather test for 240 hours. For specimens with barrier layers of Cu, Zr, and Al, degradation of optical properties by weather test was increased in a sequence of films with Cu, Zr, and Al barrier layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.362-365
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• 2002

This paper, experiment manufactures device of Metal/Poly-${\gamma}$ Benzyl $_D$-GlutamateOrganic Films/Metal structure using PBDG and I-V properties and C-F properties. The I-V characteristic is measured that approve voltage from 0 to +2[V] of device and the distance between electrode is larger, could know that small current flow and thin film could know that had insulation property. C-F characteristic has each other affinity between the polarization amount and frequency. Permittivity of MIM device could know by dipole that is voluntary polarization of LB film that polarization is happened. The capacitor properties of a thin film is better as the distance between electrodes is smaller.

• 한국전기전자재료학회논문지
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• 제34권1호
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• pp.33-38
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• 2021

Using facing target magnetron sputtering (FTMS) with a graphite target source, carbon nitride thin films were deposited on silicon and glass substrates at different substrate temperatures to confirm the tribological, electrical, and structural properties of thin films. The substrate temperatures were room temperature, 150℃, and 300℃. The tribology and electrical properties of the carbon nitride thin films were measured as the substrate temperature increased, and a study on the relation between these results and structural properties was conducted. The results show that the increase in the substrate temperature during the fabrication of the carbon nitride thin films increased the hardness and elastic modulus values, the critical load value was increased, and the residual stress value was reduced. Moreover, the increase in the substrate temperature during thin-film deposition was attributed to the improvement in the electrical properties of carbon nitride thin film.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.13-16
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• 2012

Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.205-206
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• 2011

Cu thin films for electromagnetic wave shielding were prepared on PET film and Ni-coated PET film by using Dry and Wet coating method, such as evaporation method, DC sputtering method and copper sulfate($CuSO_4$). After that, Zn thin film and Ni thin film were prepared onto the Cu thin films by using evaporation dry process and Ni electro plating wet process as a finishing treatment, respectively. The result of conductivity test and corrosion resistance test revealed Cu thin films which were formed with bigger grain size and high Cu composition rate have superior properties. Zn thin film by dry evaporation process and Ni thin film by wet electro plating process on Cu thin films were largely contributed to corrosion resistance. However, Ni thin film by wet process made conductivity of all specimen worse, the other hand, Zn thin film by dry process made it better to improve condictivity of specimens just prepared by dry process.

• 한국수소및신에너지학회논문집
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• 제22권3호
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• pp.319-325
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• 2011

The electrical properties of sputtered GDC thin films on $Al_2O_3$ substrates was studied. The electrical properties of the films were measured to evaluate the ion conductivity of GDC thin films for co-planar SOFC electrolytes. The impedance of the GDC thin films on $Al_2O_3$ substrates was affected by the film thickness and the impedance of thin film exhibited higher value than thick films. Similarly, the conductivity of the thick film showed much higher value than thin films. It indicated that the film thickness is the main factor affecting the conductivity and impedance of the GDC electrolyte for the co-planar SOFC.

• 한국전기전자재료학회논문지
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• 제11권11호
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• pp.1007-1013
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• 1998

In this paper, the dielectric properties of fabricated Polyvinylidene fluoride(PVDF, $PVF_2$) thin film with substrate temperature from 30 to at vapor deposition. The dielectric properties of PVDF thin film had been studied in the frequency range from 10Hz to 4MHz at measuring temperature between 20 and $100^{/circ}C$. The anomalous increasing in dielectric constant and dielectric loss at low frequencies and high temperature was described for PVDF thin film containing ion impurities. In particularly, ion mobility of fabricated PVDF thin film at substrate temperature at $30^{/circ}C$ decrease from $2\times10^{-5}\;to\;3.07$\times10^{-7}cm^2/V.s$ On the other hand, ion density increase abruptly from 1.49\times$$10^{13}$ to $1.5\times$10^{16}$cm^{-3}$ In spite of decreasing of ion mobility, dielectric constants and dielectric loss for PVDF thin film increase rapidly with decreasing frequency and high temperature. It was concluded that the dielectric constants and dielectric loss was related to ion density than to ion mobility at low frequency and high temperatures.