• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.168-172
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• 1999

The 9 $\mu\textrm{m}$ GaN films on sapphire substrate were grown by Hydride vapor phase epitaxy. Dislocation density of these GaN films was measured by TEM. GaN film with crack free and mirror surface was directly grown on sapphire substrate. The dislocation density of this GaN film was $2{\times}10^9/cm^2$. The surface of GaN film on patterned GaN layer also presented a smooth mirror. But a part of GaN surface included holes because of incomplete coalescence. The dislocation density of GaN film above the mask region was lower than that in the window region. Especially, the dislocation density in the region between mask center and window region was close to dislocation free. The average dislocation density of ELO GaN was $8{\times}10^7/cm^2$.

• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.131-136
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• 2011

A kinetic study has been made for the growth of nanocrystalline diamond (NCD) particles to a continuous thin film on silicon substrate in a microwave plasma chemical vapor deposition reactor. Parameters of deposition have been microwave power of 1.2 kW, the chamber pressure of 110 Torr, and the Ar/$CH_4$ ratio of 200/2 sccm. The deposition has been carried out at temperatures in the range of $400\sim700^{\circ}C$ for the times of 0.5~16 h. It has been revealed that a continuous diamond film evolves from the growth and coalescence of diamond crystallites (or particles), which have been heterogeneously nucleated at the previously scratched sites. The diamond particles grow following an $h^2$ = k't relationship, where h is the height of particles, k' is the particle growth rate constant, and t is the deposition time. The k' values at the different deposition temperatures satisfy an Arrhenius equation with the apparent activation energy of 4.37 kcal/mol or 0.19 eV/ atom. The rate limiting step should be the diffusion of carbon species over the Si substrate surface. The growth of diamond film thickness (H) shows an H = kt relationship with deposition time, t. The film growth rate constant, k, values at the different deposition temperatures show another Arrhenius-type expression with the apparent activation energy of 3.89 kcal/mol or 0.17 eV/atom. In this case, the rate limiting step might be the incorporation reaction of carbon species from the plasma on the film surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.107-116
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• 1993

Tungsten thin film was deposited on Si( 100) substrate by either Si substrate reduction of W$F_6$( case 1) or Si$H_4$ reduction of W$F_6$( case 2) in LPCVD system The morphology and properties of deposited films for both cases were examined. The crystal structure for both cases was determined to be bec (body centered cubic). The amount of tungsten and the grain size in thin films were increased as the film grows. From the experimental results and theoretical considerations, it can be understood that the tungsten thin film grows by the volmer-weber growth mode, that is, island growth. The detailed tungsten thin film growth mode is presented. It was also found that the initial polycrystal structure of tungsten thin film developed into single crystal structure as the film grew in thickness.

• Journal of the Korean institute of surface engineering
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• v.50 no.1
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• pp.10-16
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• 2017

This article reports for the first time on the lateral growth of PEO (plasma electrolytic oxidation) films on Al1050 alloy by the application of anodic pulse current in an alkaline electrolyte. Generation of microarcs was observed at the edges initially and then moved towards the central region with PEO treatment time. Disc type PEO film islands with about $20{\mu}m$ diameter were formed first and they grew laterally by the formation of new disc type PEO films at the edge of pre-formed PEO islands. The PEO film islands were found to be interconnected completely and form a continuous PEO film when generation of small size microarcs are terminated at the central part of the specimen, resulting in very smooth surface with low surface roughness less than $1{\mu}m$ of $R_a$. Further PEO treatment after the complete interconnection of PEO films islands showed local thickening of PEO films by vertical growth. It is concluded that very smooth PEO film surface can be obtained by lateral growth mechanism rather than vertical growth of them.

• Horticultural Science & Technology
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• v.29 no.4
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• pp.293-297
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• 2011

This experiment was conducted to elucidate the effects of mulching materials and removing time of the transparent polyethylene (PE) film on the growth of garlic at Uiseong experimental field, Korea. The experimental mulching materials comprised of transparent polyethylene film (0.025 mm) and net polyethylene (NPE). Plant height and leaf number of garlic were highest at PE treatment when the PE removing date was March 18 and this treatment also promoted the no. of cloves. Length of leaf sheath and bolting rate were highest and bulb weight loss rate was lowest at PE + NPE treatment when the PE removing date was March 18. But clove number was the lowest in this treatment compared to conventional PE film treatment. Conventional mulching method accelerated secondary growth rate but bulb weight loss was vice versa. There were statistically no differences in bulb diameter among treatments but conventional treatment positively focused on bulb diameter. Whenever PE film remove can suppress weeds compared to no mulching treatment but the dry weight of weeds were increasing trends as the removal dates of PE film were delayed. Transparent PE or PE + NPE treatments can be recommended to grow best quality garlic when PE film removing date is March 18.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.87-125
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• 2000

A new paradigm of crystal growth was suggested in a charged cluster model, where charged clusters of nanometer size are suspended in the gas phase in most thin film processes and are a major flux for thin film growth. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in gold and tungsten evaporation. These results imply new insights as to the low pressure diamond synthesis without hydrogen, epitaxial growth, selective deposition and fabrication of quantum dots, nanometer-sized powders and nanowires or nanotubes. Based on this concept, we produced such quantum dot structures of carbon, silicon, gold and tungsten. Charged clusters land preferably on conducting substrates over on insulating substrates, resulting in selective deposition. if the behavior of selective deposition is properly controlled, charged clusters can make highly anisotropic growth, leading to nanowires or nanotubes.

• Journal of the Korean Chemical Society
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• v.54 no.4
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• pp.380-386
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• 2010

We have investigated the growth kinetics of Al oxide film by anodization in sulfuric acid solution and the electronic properties of this film using electrochemical impedance spectroscopy. Al oxide film consisted $Al_2O_3$ was grown based on the point defect model and shown the eclctronic properties of n-type semiconductor.

• Applied Biological Chemistry
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• v.22 no.2
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• pp.91-96
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• 1979

Several herbs were tested for their antimicrobial activities during preservation of soy sauces. The herbs which resulted in retarded growth of film yeasts were extracted and added to various media such as koji-extract agar, buion-peptone agar to elucidate effects on the growth of film yeasts, Aspergillus oryzae and Bacillus subtilis. The results obtained were as follows: 1) Addition of phellodendron powder resulted in retarded formation of film in fermented soy sauces. Film was produced after 2 days without addition of the phellodendron powder. However, formation of film was observed after 8 days when 0.5 per cent of the phellodendron powder was added, and after 12 days when 1.0 per cent of the powder was added to fermented soy sauce. 2) For the amino acid soy sauce, formation of film was retarded for 6 days by 0.5 per cent of the pow der and for 8 days by 1.0 per cent of the powder. 3) Repression of film yeasts by addition of helenii and camphora powder was recognized respectively, but other herbs were appeared to have no detectable effects. 4) Growth of film yeast and Asp. oryzae way, retarded for 5 days on koji-extract agar plates which contain 0.5 per cent of phellodendron extract. Bac. subtilis also showed retarded growth for 5 days on buion-peptone agar plates containing the same amount of the extract. 5) Retarded growth of film yeast for 5 days was obtained when grown on koji-extract agar plates containing 15 per cent of sodium chloride and 0.3 per cent of phellodendron powder, however, no growth of Asp. oryzae was obtained on this concentration of sodium chloride. Growth of Bac. subtilis was repressed for 5 days on buion-peptone agar plates which contain 15 per cent of sodium chloride and 0.1 per cent of phellodendron powder.

• Journal of Magnetics
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• v.21 no.2
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• pp.168-172
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• 2016

$BiMnO_3$ has been a promising candidate as a magnetoelectric multiferroic while there have been many controversial reports on its ferroelectricity. The detailed analysis of its film growth, especially the growth of thin film having monoclinic symmetry has not been reported. We studied the effect of miscut angle, the substrate surface, and film thickness on the symmetry of $BiMnO_3$ thin film. A flat $SrTiO_3$ (110) substrate resulted in a thin film with three domains of $BiMnO_3$ and 1 degree miscut in the $SrTiO_3$ (110) substrate resulted in dominant domain preference in the $BiMnO_3$ thin film. The larger miscut resulted in a nearly perfect detwinned $BiMnO_3$ film with a monoclinic phase. This strong power of domain selection due to the step edge of the substrate was efficient even for the thicker film which showed a rather relaxed growth behavior along the $SrTiO_3$ [1-10] direction.

• Journal of Bio-Environment Control
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• v.10 no.4
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• pp.237-243
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• 2001

The experiment was conducted to investigate the effect of different mulching materials on the growth and quality of oriental melon in protected cultivation. Soil temperature, plant growth and fruit quality were affected by different mulching materials, clear polyethylene (P.E.) film (control), clear inset between black P.E. film, green P.E. film. and recycled ethylene vinyl acetate (E.V.A.) film. The highest night soil temperature was at 20 cm depth under green P.E. film, but was at 5 cm depth under other materials. Difference of soil temperature as affected by mulching materials decreased with increasing soil depth. Plant height, number of nodes, leaf area index (LAI), crop growth rate (CGR), and relative growth rate (RGR) at 30 days after transplanting were significantly greater in the recycled E.V.A. film treatment than in the other treatments. Fresh weight of weeds growth under the mulching materials was not affected by mulching material at 30 days after transplanting. However, it was the greatest under clear P.E. film mulching at 90 days after transplanting. Harvesting time of recycled E.V.A. film was 2 days earlier than that of clear P.E. film. Difference in fruit weight and length, and soluble solid content were not affected by the mulching materials. Marketable yield was 2,426 kg.10a$^{-1}$ in recycled E.V.A. film treatment, which was 6% greater than in clear P.E. film treatment.