• Journal of the Korean Magnetics Society
• /
• v.16 no.1
• /
• pp.98-101
• /
• 2006

Electron transport properties of nanostructured Pb thin film, consisting of grains, have been studied. Nanostructured thin films were fabricated on a substrate held at low temperature and their thicknesses were less than 10nm. While temperature of the film increased from 1.3 K to room temperature, the change in normal state sheet resistance has been measured. As the annealing temperature varies, the normal state sheet resistance shows a non-monotonic and irreversible change. Such behavior can be understood with the Pb grain growth due to annealing of the film.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.52-52
• /
• 2010

Amorphous carbon films have a variety of potential applications. In most such applications film properties are crucial and highly dependent on the film growth conditions. We here investigate the atomic structure of the films, which is generated at various incidence angles, using the classical molecular dynamics. Varying incidence angle of the deposited carbon atoms, different level of sp hybridization and porosity of the film are captured in our model. As the incidence angle becomes glancing, subplantation of the deposited carbon in vertical direction is significantly reduced, rather bouncing back of the incident carbon with slight modification of surface structure is mainly occurred at the early stage of the film growth. As the surface becomes rougher, shadowing effect at these glancing incidences also becomes more significant, which tends to cause asymmetrical and columnar structure. We describe incidence angle dependence of the evolution of the atomic structure of the film and its corresponding properties.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1618-1620
• /
• 2002

Transformation of molecular film occurs only usually in air-water interface, 2 dimensions domain's growth and crash are achieved. Organic matter thin film that accumulate molecular film in archaism board only that consist of growth of domain can understand correct special quality of accumulation film supplying information about fine structure and properties of matter of device observing information and so on that is surface forward player and optic enemy using AFM one of SPM application by nano electronics. The stable images are probably due to a strong interaction between the monolayer film and glass substrate. We are unable to obtain molecule resolution in images of the films but did see a marked contrast between images of the bare substrate and those with the network structure film deposited onto it. Formation that prevent when gas phase state and liquid phase state measure but Could know organic matter that molecules form equal and stable film when molecules were not distributed evenly, and accumulated in solid state only.

• Korean Journal of Plant Resources
• /
• v.24 no.5
• /
• pp.507-513
• /
• 2011

This study was conducted to evaluate the effect of mulching material and planting density on growth and bulb development of shallot. The transparent PE film was better than black PE film as a mulching material for the overwintering shallot crop. Transparent PE film mulching promoted plant growth and increased marketable yield by 21% as compared with that of the black PE film-mulched crop. However, the bulb size was not significantly affected by the type of mulching film. The height and width of ridge and planting density significantly affected the growth and bulb yield of the moisture sensitive shallot. Bulb yield of the shallot planted in five rows in 120 cm wide ridges (20,833 plants per 10 a) was 1,332 kg per 10 a, which was 1.7 times as high as that by the crop grown in three rows in 120 cm wide ridges (12,500 plants per 10 a). In conclusion, the shallot crop is recommended to be cultivated in five rows in 120 cm ridges mulched with the transparent PE film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.6
• /
• pp.439-444
• /
• 2012

For the application of photo-detector as active layer, we have studied how to deposit SiGe thin film using an independent Si target and Ge target, respectively. Both targets were synthesized by purity of 99.999%. Plasma generators were generated by radio frequency (rf, 13.56 MHz) and direct current (dc) power. When Ge and Si targets were sputtered by dc and rf power, respectively, we could observe the growth of highly crystalline Ge thin film at the temperature of $400^{\circ}C$ from the result of raman spectroscopy and X-ray diffraction method. However, SiGe thin film did not deposit above method. Inversely, we changed target position like that Ge and Si targets were sputtered by rf and dc power, respectively. Although Ge crystalline growth without Si target sputtering deteriorated considerably, the growth of SiGe thin film was observed with increase of Si dc power. SiGe thin film was evaluated as microcrystalline phase which included (111) and (220) plane by X-ray diffraction method.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.15 no.6
• /
• pp.222-224
• /
• 2005

In suite of their superior optical and laser properties rare-earth orthovanadate single crystals have not been adopted yet into extensive industrial applications because of crystal growth difficulties. The edge-defined film-fed-growth (EFG) technique was applied successfully for the production of such crystals. At first time 1 inch $LuVO_4$ single crystals were grown by the EFG technique using newly developed die construction of high porous iridium with the application of automatic diameter control system.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.6
• /
• pp.283-287
• /
• 2002

We have studied Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate for application of interconnection metal in ULSI circuits. Zr(Si)N film was deposited with reactive DC magnetron sputtering system using $Ar/N_2$mixed gas. The value of the resistivity was the lowest for the ZrN film using 29 : 1 of Ar : $N_2$reactant gas ratio at room temperature and decreased with increasing of Si substrate temperature. As the value of ZrN film resistivity was decreased, the direction of crystal growth was toward to (002) plane. The barrier property of ZrN film added with Si was improved. But Si was added too much in ZrN film, the barrier property was degraded. The adhesive property was improved with increasing of Si in ZrN. For the analysis of the film, XRD, Optical microscopy, Scretch tester, so on were used.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.2
• /
• pp.263-274
• /
• 1996

Titanium dioxide ($TiO_{2}$) film has been widely used as anti-reflection coating for solar cells but not as masking oxide for metallisation and diffusion of impurities. In this paper we have investigated the properties of $TiO_{2}$ for possible incorporation into solar cell processing sequence. Thus the use of a spray deposition system to form the $TiO_{2}$ film and the characterisation of this film to ascertain its suitability to solar cell processing. The spray-on $TiO_{2}$ film was found to be resistant to all the chemicals used in conjunction with solar cell processing. The high temperature anealing (in oxygen ambient) of the spray-on $TiO_{2}$ film resulted in an increased refractive index, which indicated the growth of an underlying thin film of $SiO_{2}$ film for the passivation of silicon surface which would reduce the recombination activities of the fabricated device. Most importantly, the successful incorporation of the $TiO{2}$ film will lead to the reduction of the many high temperature processing steps of solar cell to only one.

• Journal of the Korean institute of surface engineering
• /
• v.31 no.6
• /
• pp.345-358
• /
• 1998

The evolution of surface roughness and morphology in epitaxial Si and $Si_{0.7}Ge{0.3}$ alloys grown by UHV opm-beam sputter deposition onto nominally-singular, [100]-, and [110]-mi-scut Si(001) was investigated by stomic force microscopy and trasmission electron microscopy. The evolution of surface roughness of epitaxial Si films grown at $300^{\circ}C$ is inconsistent with conventional scaling and hyperscaling laws for kineti roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contraty to previous high-temperature growth results, the presence of steps during deposition at $300^{\circ}C$ increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughnesses on vicival substrates. Strain-induced surface roughening was found to dominate in $Si_{0.7}Ge{0.3}$ alloys grown on singular Si(001) substrates at $T_S\ge450^{\circ}C$ where the coherent islands are prererentially bounded along <100> directions and eshibt {105} facetting. Increasing the film thickness above critical values for strain relaxation leads to island coalescence and surface smoothening. At very low growth temperatures ($T_s\le 250^{\circ}C$), film surfaces roughen kinetically, due to limited adatom diffusiviry, but at far lower rates than in the higher-temperature strain-induced regime. There is an intermediate growth temperature range, however, over which alloy film surfaces remain extremely smooth even at thicknesses near critical values for strain relaxation.

• Korean Journal of Organic Agriculture
• /
• v.9 no.1
• /
• pp.17-27
• /
• 2001

To clarify the proper and safe duration of maturation periods for sawdust-pig manure composts, leaf lettuces were applied with pig manure composts fermented for 15, 30, 45, 60, 75 days and 1 year (control) and cultivated in a plastic house with or without additional PE film tunnel. The changes in physiochemical properties of soil and leaf lettuce growth were measured. Shorter duration of maturation periods enhanced the generation of N $H_3$ gas from the composts and resulted in significant decrease in seed germination, growth and yield of leaf lettuce. Under with and without PE tunnel conditions the concentration of N $H_3$ from compost over 3.8 and 2.1 mg/100g composts, respectively induced growth reduction. In proportion to the increase of maturation duration saw-dust containing pig manure exhibited decrease in C/N ratio, N $H_4^{+}$-N, N $H_4^{+}$N $O_3^{-}$ ratio but increase in N $O_3^{-}$-N contents. In case of applying pig manure compost without PE film tunnel condition the minimum maturation period of pig manure composts for safe leaf growth was 60 days, while minimum 75 days of maturation was required when applied with PE film tunnel. tunnel.