• Current Photovoltaic Research
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• v.1 no.2
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• pp.103-108
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• 2013

Epitaxial growth of a high-quality thin Si film is essential for the application to low-cost thin-film Si solar cells. A polycrystalline Si film was grown on a $SiO_2$ substrate at $450^{\circ}C$ by a Al-assisted crystal growth process. For the purpose, a thin Al layer was deposited on the $SiO_2$ substrate for Al-assisted crystal growth. However, the epitaxial growth of Si film resulted in a rough surface with humps. Then, we introduced a thin amorphous Si seed layer on the Al film to minimize the initial roughness of Si film. With the help of the Si seed layer, the surface of the epitaxial Si film was smooth and the crystallinity of the Si film was much improved. The grain size of the $1.5-{\mu}m$-thick Si film was as large as 1 mm. The Al content in the Si film was 3.7% and the hole concentration was estimated to be $3{\times}10^{17}/cm^3$, which was one order of magnitude higher than desirable value for Si base layer. The results suggest that Al-doped Si layer could be use as a seed layer for additional epitaxial growth of intrinsic or boron-doped Si layer because the Al-doped Si layer has large grains.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.33-33
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• 1998

Invisible charged clusters are suggested to form in the gas phase and to become the growth unit in the thin film process. Similar suggestion had been made by Glasner el al. in the crystal growth of KBr and KCL in the solution where the lead ions were added. The charged cluster model, which was suggested in the diamond CVD process by our group, will be extended to the other thin film processes. It will be shown based on both the theoretical analysis and the experimental evidences that the charged clusters are formed in the gas phase and become the growth unit of the crystal in the thin film process.

• Corrosion Science and Technology
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• v.5 no.4
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• pp.137-140
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• 2006

The effect of pre-existing barrier-type film on porous aluminum oxide film formation during anodization was investigated to control the uniform film growth rate. Initial potential fluctuations during anodization indicated that the breakdown of barrier-film is preceded before the porous formation and the induction time for the porous film growth increases with the increases of pre-existing film thickness. The porous film growth mechanism is lot affected by the presence of barrier film on aluminum surface. In parallel, uniform growth of barrier film underneath the porous structure was attained by two-step anodization processes.

• KSBB Journal
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• v.9 no.4
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• pp.412-417
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• 1994

The biodegradable characteristics of starch-filled polyethylene film by fungi were investigated. Aspergillus niger showed the highest cell growth among five species of fungi used in the experiment. Higher starch content gave the higher growth rate of A. niger; however, the kind of film or cutting direction did not give any effects on the cell growth. The use of vinyl trimethoxysilane for the stronger binding of starch and polyethylene did not inhibit the cell growth. When the starch content was higher than 10%, the elongation of the film decreased significantly after the growth of microorganism in the case of transverse direction samples.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.337-350
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• 1999

Thick diamond film having ~700${\mu}{\textrm}{m}$ thickness was deposited on polycrystalline molybdenum (Mo) substrate using high power (4kW) microwave plasma enhanced chemical vapor deposition (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconductivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.441-445
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• 1999

Thick diamond film having $~700\mu\textrm{m}$ thickness was deposited on polycrystalline molybdenum(Mo) substrate using high power (4 kW) microwave plasma-enhanced chemical vapor depostion (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconcuctivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

• Journal of Integrative Natural Science
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• v.14 no.1
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• pp.1-5
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• 2021

A zinc oxide thin film was made by varying the deposition time on the silicon(110) substrate by using a radio frequency sputtering time of 60 minutes, 120 minutes and 180 minutes. As a result of analyzing the grain growth surface of the ZnO₂ thin film using an X-ray diffraction apparatus, the directions of the main growth plane (002) and (103) planes of the thin film were significantly affected by the deposition time. As a result of observing the particle growth of the ZnO₂ thin film through an electron scanning microscope, it was observed that in the initial stage of deposition of the ZnO₂ thin film, an incubation time was required during which growth was stagnant, and then particle growth occurred again after a certain period of time. As a result of chemical analysis of the ZnO₂ thin film, the increase in the deposition time did not change with the amount of oxygen in the ZnO₂ thin film, but a change in the composition of Zn was observed, indicating that the deposition time of the thin film had an effect on the Zn component in the thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.114-117
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• 2020

In this study, we performed the deposition of Al thin film using a DC magnetron sputtering method. To evaluate electrical and structural properties, the growth conditions were changed in terms of two functions, namely, sputtering power ranging from 41.6 to 216 W and film growth rate ranging from 5.35 to 26.39 nm/min. The growth rate and the microstructure were characterized by a scanning electron microscopy and X-ray diffraction analysis. The plane of crystalline growth showed that the preferential (111) direction and defects due to the grain boundary increased with DC power. The resistivity of the Al film over 50 nm showed a constant value by horizontal grain growth. Our results can be applicable for the preparation of nano-templates for anodic aluminum oxide.

• Horticultural Science & Technology
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• v.19 no.4
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• pp.585-590
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• 2001

Bulbs of Lilium Oriental hybrids cv. 'Casablanca' and 'Marco Polo' were grown in a plastic house in alpine area of Pyongchang Kangwondo. Saw-dust, black film, reflective film, transparent film, and white/black double film were used as mulching materials to ascertain the growth of foliage, the quality of flower, and the size of bulbs. Foliage weights of both lilies were higher when lilies were grown with mulching materials than control. There were no differences of bulb weight among the control and mulching treatments, except delayed bulb growth in black film and white/black double film. Mulching cultivation with saw-dust and reflective film stimulated foliage growth, root growth and bulb production, but black film delayed the growth and development. Transparent and white/black double films showed no effects on foliage growth and bulb development than the control. As mulching materials tended to delay lily growth, including foliage and bulb, an extension of growing term might be better to produce high quality lilies than common cultivation in alpine area.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.12-13
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• 2012

An environmentally friendly method for in situ growth of Mg-Al hydrotalcite (HT) film on AZ31 magnesium alloy has been developed. The growth processes and corrosion resistance of the HT film were investigated. Then the HT film was surface modified by phytic acid solution to further improve the corrosion resistance. The film formation involves the dissolution of AZ31 substrate, adsorption of the ions from solution, nucleation of the precursor, followed by the dissolution of $Al^{3+}$, exchanging of $OH^-$ by $CO{_3}^{2-}$ and growth of the HT film. The HT film is very compact and acts as a barrier against $Cl^-$ attack in the early stage of corrosion, and then the surface of the film is dissolved gradually. This dense HT film can provide effective protection to the AZ31 alloy. The HT film with surface modification by phytic acid presents a self-healing feature and exhibits better corrosion resistance.