• Title/Summary/Keyword: film density

Search Result 2,367, Processing Time 0.032 seconds

Effects of an External Magnetic Field on the Magnetic Properties of Sputtered Magnetic Thin Films (스퍼터링 중 외부자기장이 자성박막의 자기적 특성에 미치는 영향)

  • Ahn, Hyun Tae;Lim, Sang Ho;Jee, Kwang Koo;Han, Jun Hyun
    • Korean Journal of Metals and Materials
    • /
    • v.49 no.6
    • /
    • pp.505-513
    • /
    • 2011
  • A magnetic device which enables the application of a strong and uniform magnetic field to thin film during sputtering was designed for controlling the magnetic anisotropy using a three dimensional finite element method, and the effects of the external magnetic field on the magnetic properties of sputtered thin films were investigated. Both the intensity and the uniformity of the magnetic flux density in the sputter zone (50 mm ${\times}$50 mm) was dependent on not only the shape and size of the magnet device but also the magnitude of stray fields from the magnet. For the magnet device in which the distance between two magnets or two pure iron bars was 80-90 mm, the magnetic flux density along the direction normal to the external magnetic field direction was minimum. The two row magnets increased the magnetic flux density and uniformity along the external magnetic field direction. An Fe thin film sputtered using the optimized magnet device showed a higher remanence ratio than that fabricated under no external magnetic field.

Investigation of the Relationship Between Dishing and Mechanical Stress During CMP Process (수직하중에 의한 응력이 CMP 공정의 디싱에 미치는 영향)

  • Hyeong Gu Kim;Seung Hyun Kim;Min Woo Kim;Ik-Tae Im
    • Journal of the Semiconductor & Display Technology
    • /
    • v.22 no.2
    • /
    • pp.30-34
    • /
    • 2023
  • Since dishing in the CMP process is a major factor that hinders the uniformity of the semiconductor thin film, many studies have focused this issue to improve the non-uniformity of the film due to dishing. In the metal layer, the dishing mainly occurs in the central part of the metal due to a difference in a selection ratio between the metal and the dielectric, thereby generating a step on the surface of the metal layer. Factors that cause dishing include the shape of the thin film, the chemical reaction of the slurry, thermal deformation, and the rotational speed of the pad and head, and dishing occurs due to complex interactions between them. This study analyzed the stress generated on the metal layer surface in the CMP process using ANSYS software, a commercial structure analysis program. The stress caused by the vertical load applied from the pad was analyzed by changing the area density and line width of the dummy metal. As a result of the analysis, the stress in the active region decreased as the pattern density and line width of the dummy metal increased, and it was verified that it was valid compared with the previous study that studied the dishing according to the dummy pattern density and line width of the metal layer. In conclusion, it was confirmed that there is a relationship between dishing and normal stress.

  • PDF

Discharge Characteristics in Capacitively-Coupled Magnetron Sputtering System (용량 결합형 마그네트론 스퍼터링 장치의 방전 특성)

  • Park, M.H.;Kwak, D.J.
    • Proceedings of the KIEE Conference
    • /
    • 1999.07d
    • /
    • pp.1732-1734
    • /
    • 1999
  • In order to study the fabricating condition of phosphor layers of thin film EL devices, some discharge characteristics with several targets in the parallel-plate magnetron sputtering system will be studied. Plasma parameters, such as electron density and temperature, are also studied since they may be considered as one of the very important factors of fabricating condition of thin film EL device.

  • PDF

Progess in Fabrication Technologies of Polycrystalline Silicon Thin Film Transistors at Low Temperatures

  • Sameshima, T.
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2004.08a
    • /
    • pp.129-134
    • /
    • 2004
  • The development of fabrication processes of polycrystalline-silicon-thin-film transistors (poly-Si TFTs) at low temperatures is reviewed. Rapid crystallization through laser-induced melt-regrowth has an advantage of formation of crystalline silicon films at a low thermal budget. Solid phase crystallization techniques have also been improved for low temperature processing. Passivation of $SiO_2$/Si interface and grain boundaries is important to achieve high carrier transport properties. Oxygen plasma and $H_2O$ vapor heat treatments are proposed for effective reduction of the density of defect states. TFTs with high performance is reported.

  • PDF

Fabrication of Oxide Thick Film for Renewable Electrical Energy Storage Technology

  • Lee, Sang-Heon
    • Transactions on Electrical and Electronic Materials
    • /
    • v.6 no.4
    • /
    • pp.186-189
    • /
    • 2005
  • We have fabricated superconducting HTSC ceramic thick films by chemical process. c-axis oriented HTSC thick films have been attempted bi-axially textured Ni tapes. The x-ray diffraction pattern of the HTSC thick films contained superconducting phase crystal. The critical temperature and critical current density was 110K.

A Study on the Decision Factor N of the Tone Density (Tone농도의 Facter N 결정에 관한 연구)

  • 안석출
    • Journal of the Korean Graphic Arts Communication Society
    • /
    • v.10 no.1
    • /
    • pp.35-54
    • /
    • 1992
  • Direct electrostatic coating method is simple, low cost and environmentally useful method. We are investigated on the coating of carrier transfer polymer layer on the carrier generate inorganic pigment layer using direct electrostatic coating method. The sample was obtained electrostatic deposite layer by fusing and calendering on the copper phthalocyanine. we could be found several polymer thin film shows good bond properties between film and pigment layer.

  • PDF

Fabrication and Electrochemical Characterization of All Solid-State Thin Film Micro-Battery by in-situ Sputtering (In-situ 스퍼터링을 이용한 잔고상 박막 전지의 제작 및 전기화학적 특성 평가)

  • Jeon Eun Jeong;Yoon Young Soo;Nam Sang Cheol;Cho Won Il;Shin Young Wha
    • Journal of the Korean Electrochemical Society
    • /
    • v.3 no.2
    • /
    • pp.115-120
    • /
    • 2000
  • All solid-state thin film micro-batteries consisting of lithium metal anode, an amorphous LiPON electrolyte and cathode of vanadium oxide have been fabricated and characterized, which were fabricated with cell structure of $Li/LiPON/V_2O_5Pt$. The effect of various oxygen partial pressure on the electrochemical properties of vanadium oxide thin films formed by d.c. reactive sputtering deposition were investigated. The vanadium oxide thin film with deposition condition of $20\%\;O_2/Ar$ ratio showed good cycling behavior. In in-siか process, the LiPON electrolyte was deposited on the $V_2O_5$ films without breaking vacuum by r.f. magnetron sputtering at room temperature. After deposition of the amorphous LiPON, the Li metal films were grown by a thermal evaporator in a dry room. The charge-discharge cycle measurements as a function of current density and voltage variation revealed that the $Li/LiPON/V_2O_5$ thin film had excellent rechargeable properly when current density was $7{\mu}A/cm^2$. and cut-off voltage was between 3.6 and 2.7V In practical experiment, a stopwatch ran on this $Li/LiPON/V_2O_5$ thin film micro-battery. This result means that thin film micro-battery fabricated by in-siか process is a promising for power source for electronic devices.

Development of Large-area Plasma Sources for Solar Cell and Display Panel Device Manufacturing

  • Seo, Sang-Hun;Lee, Yun-Seong;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.08a
    • /
    • pp.148-148
    • /
    • 2011
  • Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.

  • PDF

COMPARISON OF JAW BONE DENSITY IN YOUNG ADULTS AND POSTMENOPAUSAL WOMEN (젊은 성인과 폐경 여성간의 악골 골밀도에 관한 비교 연구)

  • Kim, Tae-Sung;Lee, Dong-Keun;Lee, Byung-Do;Jung, Sun-Kwan
    • Maxillofacial Plastic and Reconstructive Surgery
    • /
    • v.23 no.2
    • /
    • pp.107-114
    • /
    • 2001
  • Objectives : To compare jaw bone density of young adults (control group) and post-menopausal women(experimental group) in periapical and panoramic film. Materials and Methods : The bone mineral density values of lumbar and femur were measured by dual-energy X-ray absorptiometry(DEXA) and T scores of lumbar were obtained. T scores were classified into 3 group (T<-2.5, $-2.5{\leqq}T<-1$, $-1{\leqq}T$). Radiographic densities of alveolar bones were measured from interdental bones of premolar, molar areas in the maxilla and mandible and expressed into copper step wedge thickness by Scion $Image^{(R)}$ program. We considered these values of step wedge thickness as bone density of alveolar bone. Panorama mandibular index(PMI) was calculated by the method that the height of the inferior cortex of the mandible was divided by the height from the lower border of the mandible to the superior edge of the mental foramen. Bone density of alveolar bone and PMI were analysed statistically. Results : There were significant differences in bone mineral density of lumbar and femoral neck between control and experimental groups. There were also significant differences in bone density of premolar and molar area of jaw between control and experimental groups by MANOVA test. When considered lumbar T variables, there was only difference in interdental bone density of maxillary molar area between control and experimental group, but there was interaction. Interdental bone density of experimental group was appeared higher in $-1{\leqq}T$ group and lower in T<-2.5 group than control group. There was significant difference in PMI between control and experimental groups, but there was also inter action, thus, PMI of experimental group was appeared higher in $-1{\leqq}T$ group and lower in T<-2.5 group than control group. Conclusion : There were significant differences of alveolar density and cortical bone thickness between young men and post-menopausal women in periapical and panoramic film. These differences were dependent on lumbar T.

  • PDF