• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.7-14
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• 1998

Details are given of an study of the characteristics of field-induced electron emission from hydrogen-free high $sp^3$ content(>90%) amorphous diamond (a-D) film deposited on heavily doped ($\rho$<0.01 $\Omega\cdot\textrm{cm}$) n-type monocrystalline Si(111) substrate. It is demonstrated that a-D film has excellent electron field emission properties. Emission current can reach 0.9 $\mu$A at applied field as low as 1 V/$\mu\textrm{m}$, and emission current density can be obtained about several mA/$\textrm{cm}^2$. The emission current is stable when the beginning current is at 50 $\mu$A within 72 hours. Uniform fluorescence display of electron emission from whole face of the a-D film under the electric field of 10~20 V/$\mu\textrm{m}$ was also observed. It can be considered that the contribution of excellent electron emission property results from its smooth, uniform, amorphous surface and high $sp^3$ content of the a-D films.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1998.11a
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• pp.9-11
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• 1998

A phenomenon of electroluminescent radiate as electric field applied in the phosphor, in this paper, we produced the Powder Electroluminescent Device(PELD) which was changing the structure and the thickness of phosphor and insulator for realization of the PELD with high brightness. We made PELD with structure that is WK-1(ITO film/Phosphor/Insulator/Electrode), WK-2(ITO film/Phosphor/Insulator/Electro de), WK-3(ITO film/Phosphor/Insulator/Electrode), WK-4(ITO film/Phosphor+Insulator/ Electrode). The property of the produced PELD are analyzed by measuring the spectrum which electrical and optical property, the brightness and the transferred charge density. In this result, the structure of WK-4 have good luminescence property than others, it's effective thickness is 60${\mu}{\textrm}{m}$. At 100V 400Hz, High brightness of 2700cd/m2 was performed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.938-941
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• 2000

SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment

• Journal of the Korean Society of Safety
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• v.4 no.1
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• pp.5-14
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• 1989

Deterioration induced by partial discharge was investigated for low-density polyethylene samples. Under an electrical field, a cold-drawn PE film was stretched perpendicularly to the direction of the original drawing. The starting voltage of the discharge shows a minimum at the draw ratio of 1.2 to 1.8. Around the same draw ratio, the elastic modulus and mechanical loss factor (tan S) of the sample exhibit a minimum and a maximum, respectively. According to the X-ray analysis, the size itf microcrystals decreases with increasing draw ratios. Reorientation of the ru01ecular chains was observed above a draw ratio of 1.5 by the IR method.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1867-1872
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• 2018

This study proposes a route for surface modification for p-type cobalt oxide-based gas sensors. We deposit a thin layer of Ni on the Co oxide film by sputtering process and annealed at $350^{\circ}C$ for 15 min in air, which changes a typical sputtered film surface into one interlaced with a high density of hemispherical nanoparticles. Our in-depth materials characterization using transmission electron microscopy discloses that the microstructure evolution is the result of an extensive inter-diffusion of Co and Ni, and that the nanoparticles are nickel oxide dissolving some Co. Sensor performance measurement unfolds that the surface modification results in a significant sensitivity enhancement, nearly 200% increase for toluene (at $250^{\circ}C$) and CO (at $200^{\circ}C$) gases in comparison with the undoped samples.

• Corrosion Science and Technology
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• v.9 no.1
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• pp.20-28
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• 2010

According to the bipolar model, ion selectivity of some species in the passive film is important factor to control the passivation. An increase of cation selectivity of outer layer of the passive film can stabilize the film and improves the corrosion resistance. Therefore, the formation and roles of ionic species in the passive film should be elucidated. In this work, two types of solution (hydrochloric or sulfuric acid) were used to test high N and Mo-bearing stainless steels. The objective of this work was to investigate the formation of oxyanions in the passive film and the roles of oxyanions in passivation of stainless steel. Nitrogen exists as atomic nitrogen, nitric oxide, nitro-oxyanions (${NO_x}^-$), and N-H species, not nitride in the passive film. Because of its high mobility, the enriched atomic nitrogen can act as a reservoir. The formation of N-H species buffers the film pH and facilitates the formation of oxyanions in the film. ${NO_x}^-$ species improve the cation selectivity of the film, increasing the oxide content and film density. ${NO_x}^-$ acts similar to a strong inhibitor both in the passive film and at active sites. This facilitates the formation of chromium oxide. Also, ${NO_x}^-$ can make more molybdate and nitric oxide by reacting with Mo. The role of Mo addition on the passivation characteristics of stainless steel may differ with the test environment. Mo exists as metallic molybdenum, molybdenum oxide, and molybdate and the latter facilitates the oxide formation. When nitrogen and molybdenum coexist in stainless steel, corrosion resistance in chloride solutions is drastically increased. This synergistic effect of N and Mo in a chloride solution is mainly due to the formation of nitro-oxyanions and molybdate ion. Oxyanions can be formed by a 'solid state reaction' in the passive film, resulting in the formation of more molybdate and nitric oxide. These oxyanions improve the cation selectivity of the outer layer and form more oxide and increase the amount of chromium oxide and the ratio of $Cr_2O_3/Cr(OH)_3$ and make the film stable and dense.

• Journal of the Korean Society of Radiology
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• v.12 no.5
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• pp.645-650
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• 2018

This research aims at measuring images density of according to DAP(dose area product), and suggesting the need to quality control of exposure dose. When tube voltage was fixed as 80 kVp and tube current was set as 1, 25, 50, 80, and 100 mAs, with the increase of DAP from 25 mAs to 50 mAs, the dose also rose 1.88 times as much as before, and with the increase from 50 mAs to 100 mAs, it got 2.05 time higher than before. However, the images density obtained as film grew as much as 48% with the increase from 25 mAs to 50 mAs, and 29% with the increase from 50 mAs to 100 mAs. In addition, it has been found out that the higher the DR images density got from 25 mAs to 50 mAs, the bigger it became by 12%, and that it got bigger by 30% with the increase from 50 mAs to 100 mAs. In other words, the differences in the image density by the increase of the dose with the digital imaging equipment in a proper condition was proved to be less than in the film images. Based on the results of this research, medical institutions using a digital imaging equipment are expected to be able to reduce exposure dose of each region of interest than now through the quality control of radiation dose.

• Polymer(Korea)
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• v.39 no.3
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• pp.499-505
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• 2015

Polyorganosiloxane having controlled cross-linking density and phenyl group content were prepared by dimethyldimethoxysilane (DMDMS), methyltrimethoxysilane (MTMS) and phenyltrimethoxysilane (PTMS). The effect of cross-linking density and phenyl group content on the physical properties of siloxane resin and its coated film have been invetigated. Si-NMR results confirmed that synthesized siloxane resins have equivalent D $T^{Me}$ $T^{Ph}$ structures according to applied mole ratios of DMDMS, MTMS and PTMS. Polyorganosiloxane having higher cross-linking density with high phenyl content showed the high molecular weight and increasing phenyl content resulted in higher refractive index as well as better thermal stability. Cross-linking density is more important factor than phenyl content to obtain higher pencil hardness of coated film on the glass. Our results concluded that even polyorganosiloxanes having similar siloxane structures show different physical properties as function of cross-linking density and phenyl content in polyorganosiloxane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.95-95
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• 2009

Single-crystalline Bi nanowires have motivated many researchers to investigate novel quasi-one-dimensional phenomena such as the wire-boundary scattering effect and quantum confinement effects due to their electron effective mass (~0.001 me). Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at $270^{\circ}C$. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. However, the method is known to produce relatively lower density of nanowires than that of other nanowire growth methods for device applications. In order to increase density of nanowire, we propose a method for enhancing compressive stress which is a driving force for nanowire growth. In this work, we report that the compressive stress can be controlled by modifying a substrate structure. A combination of photolithography and a reactive ion etching technique was used to fabricate patterns on a Si substrate. It was found that the nanowire density of a Bi film grown on $100{\mu}m{\times}100{\mu}m$ pattern Si substrate increased over seven times higher than that of a Bi sample grown on a normal substrate. Our results show that density of nanowire can be enhanced by sidewall effect in optimized proper pattern sizes for the Bi nanowire growth.

• Journal of Ocean Engineering and Technology
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• v.23 no.4
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• pp.64-68
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• 2009

It has been observed that coated steel structures deteriorate more rapidly than the designed lifetime due to acid rain caused by air pollution, etc. Therefore, improving the corrosion resistance of anti-corrosive paint is very important in terms of safety and the economic point of view. In this study, the corrosion resistance of five kinds of anti-corrosive paints, including the Acryl, Fluorine, and Epoxy resin series, were investigated with electrochemical methods, such as corrosion potential measurements, polarization curves, diffusion limiting current density, etc. As a result, the corrosion resistance of the F101 specimen with the fluorine resin series was found to be superior to the other specimens, while E100 with the epoxy resin series also showed a somewhat good corrosion resistance. Furthermore, it was observed that the amount of water and oxygen entering the inner side of a painted film increased with an increase in immersion time, irrespective of the kind of resin series. However, the oxygen diffusion limiting current density of a specimen with good corrosion resistance was relatively decreased compared to other specimens, because of the difficulty of oxygen diffusion penetrating to the inner side of the film. Consequently it is suggested that we can qualitatively evaluate the corrosion resistance of an anti-corrosive paint by measuring the diffusion limiting current density as an electrochemical method.