• Journal of information and communication convergence engineering
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• 제9권2호
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• pp.217-219
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• 2011

As silicon devices shrink and their density increases, the low dielectric constant materials instead of $SiO_2$ film is required. SiOC film as low-k films was deposited by the capacitively coupled plasma chemical vapor deposition and then annealed at $300{\sim}500^{\circ}C$ to find out the properties of the dependence on the temperature and polarity. This study researched the dielectric constant using by the structure of the metal/SiOC film/p-Si, chemical shift, thickness, refractive index and hardness. The trend of reflective index was inverse proportioned the thickness, but the dielectric constant was proportioned it. The dielectric constant decreased with decreasing the thickness and the increment of the refractive index.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권3호
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• pp.109-115
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• 2003

Diamond-like carbon (DLC) films are deposited at room temperature using a filtered cathodic vacuum arc (FCVA) technique. The influence of negative bias voltage (applied to the substrate from 0 to -250V) on the $sp^3$ hybridized carbon fraction is examined by Raman spectroscopy and x-ray photoelectron spectroscopy (XPS) for C 1s core peak. For the first time, depth profile of C 1s, Si 2p, and O 1s XPS peaks for the deposited DLC film are obtained. DLC film is modeled as a multilayered structure. composing of surface, bulk, and interface. In addition, the x-ray reflectivity (XRR) is proposed as a method for estimating the density, surface roughness, and thickness of each layer constituting the DLC film. The estimated thickness of DLC film is in good agreement with the result obtained from the transmission electron microscope (TEM) measurement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.582-585
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• 2001

InSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 200$^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.880-883
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• 2003

ZnO thin films for Film Bulk Acoustic Resonator(FBAR) were prepared by FTS (Facing Target Sputtering) system. The FTS methode enable to generate high density plasma, and it has a high deposition rate at 1mTorr pressure. Therefore, the ZnO thin films were deposited on $AZO/SiO_2/Si$ substrates with oxygen gas flow rate, and the other sputtering conditions were fixed such as a sputtering current of 0.8A, a substrate temperature at room temperature. AZO bottom electrode were deposited on $SiO_2/Si$ substrate and by Zn:Al(Al:2wt%) metal target. ZnO thin film thickness and the c-axis preferred orientation of ZnO thin film were evaluated by ${\alpha}-step$ and XRD.

• Corrosion Science and Technology
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• 제2권1호
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• pp.12-17
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• 2003

The effects of Cr content and film formation potential on electronic behaviors of the passive film on Fe-Cr alloys were investigated in borate buffer solution. Influence of pH on passive films of both Fe-Cr and Fe-Cr-Mo alloys was also investigated. Mott-Schottky and cyclic voltammetry techniques were used to elucidate electronic behaviors of passive films and their electrochemical characteristics. AES analysis of passive films was carried out. Results showed that doping density decreased as Cr content and film formation potentials increased. The addition of Mo to Fe-Cr alloy had little influence on donor densities in pH 9.2 solution but some effects on the decrease in donor densities in pH 1.6 acidic solution.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 추계학술대회
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• pp.1939-1943
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• 2003

The precise structural analysis of $SnO_{2}$ thin film, which was prepared by PECVD and thickness 2400 ${\AA}$, was tried to do the structural refinement using X -ray diffraction data. The observed diffraction patterns of $SnO_{2}$ thin film had the strongly preferred orientation effect. WIMV method was used to correct the preferred orientation effect. The final weighted R-factor, $R_{WD}$ was 7.92 %. The lattice parameters, a = b == 4.7366(1) ${\AA}$ and c = 3.1937(1) ${\AA}$, were almost in accordance with ones of $SnO_{2}$ powder.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.190.2-190.2
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• 2014

We report the origin of the improvement of the power conversion efficiency (PCE) of hybrid thin-film solar cells when a soluble C60 derivative, [6,6]-phenyl-$C_{61}$-butyric acid methyl ester (PCBM), is introduced as a hole-blocking layer. The PCBM layer could establish better interfacial contact by decreasing the reverse ark-saturation current density, resulting in a decrease in the probability of carrier recombination. The power conversion efficiency of this optimized device reached a maximum value of 8.34% and is the highest yet reported for hybrid thin-film solar cells.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.23.2-23.2
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• 2010

Researches on the drying of particle/polymer suspensions receive attentions in technical applications such as manufacturing display and batteries. In this study, the effect of polymers on drying behavior of silica/poly(vinyl alcohol) suspension was investigated in terms of suspension stability and stress development during drying. The effect of polymer adsorption was studied by changing pH. More strongly flocculated suspension with lower pH became more dispersed and close-packed film after drying. Evaluation of potential energy allows us to suggest that the adsorbed polymers which bridge the particles introduce steric repulsion and lead flocculated suspension to dispersed film. When the effect of adsorption kinetics was studied by changing the mixing time, the adsorption amount, characteristic stress and dried film density showed a similar behavior in the form of with a single characteristic time. It implies that the drying process can be determined by simple characteristic equation with a single time constant.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.65-66
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• 2000

Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for crystalline Si film growth. The XRD analysis on $CaF_2/glass$ illustrated (220) preferential orientation and showed lattice mismatch less than 5 % with Si. We achieved a fluoride film with breakdown electric field of 1.27 MV/cm, leakage current density about $10^{-6}$ $A/cm^2$, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon $({\mu}c-Si)$ film growth by using a $CaF_2/glass$ substrate. The ${\mu}c-Si$ films exhibited crystallization in (111) and (220) planes, grain size of $700\;{\AA}$, crystalline volume fraction over 65 %, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than $4{\times}10^{-7}$ S/cm.

• Current Optics and Photonics
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• 제2권4호
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• pp.378-382
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• 2018

In most previous investigations of plasmonic and metamaterial applications, the metallic film has been regarded as a perfect electrical conductor. Here we demonstrate the resonance characteristics of THz metamaterials fabricated from metal film that has a finite dielectric constant, using finite-difference time-domain simulations. We found strong redshift and spectral broadening of the resonance as we decrease the metal's plasma frequency in the Drude free-electron model. The frequency shift can be attributed to the effective thinning of the metal film, originating from the increase in penetration depth as the plasma frequency decreases. On the contrary, only peak broadening occurs with an increase in the scattering rate. The metal-thickness dependence confirms that the redshift and spectral broadening occur when the effective metal thickness drops below the skin-depth limit. The electromagnetic field distribution illustrates the reduced field enhancement and reduced funneling effects near the gap area in the case of low plasma frequency, which is associated with reduced charge density in the metal film.