• Journal of Microbiology and Biotechnology
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• v.11 no.6
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• pp.979-985
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• 2001

A fluorometric detection technique for HDL (High Density Lipoprotein) and LDL (Low Density Lipoprotein) was developed for application in a fiber-optic immunosensor using a protein A Langmuir-Blodgget (LB) film. For the fluorescence immunoassay, antibodies specific to HDL or LDL were imobilied on the protein A LB film, and a fluorescence amplification method was developed to overcome their weak fluorescence. The deposition of protein A using the LB technique was monitored using a surface pressure-are $({\pi}-A)$ curve, and the antibody immobilization of the protein A LB film was experimentally verified. The immobilized antibody was used to separate only HDL and LDL from a sample, then the fluorescence of he separated HDL or LDL was amplified. The amount of LDL or HDL was measured using the developed fiber optic fluorescence detection system. The optical properties resulting from the reaction of HDL or LDL with o-phtaldialdehyde, detection range, response time, and stability of the immunoassay were all investigated. The respective detection ranges for HDL and LDL were sufficient to diagnose the risk of coronary heart disease. The amplification step increased the sensitivity, while selective separation using the immobilized antibody led to linearity in the sensor signal. The regeneration of the antibody-immobilized substrate could produce a stable and reproducible immunosensor.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.8-15
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• 2002

Tetrahedral amorphous carbon(ta-C) films were deposited by the filtered vacuum arc(FVA) process. The FVA process has many advantages such as high ionization ratio and the ion energy, which is suitable for dense amorphous carbon film deposition. However, the energy of the carbon ion cannot be readily controlled by manipulating the arc source parameters. In order to control the film properties in wide range, we investigated the dependence of the film properties on the substrate bias voltage. The mechanical properties and the density of the film exhibit the maximum values at about -100 V of the bias voltage. The maximum values of hardness and density were respectively 54$\pm$3 GPa and 3.6$\pm$0.4 g/㎤, which are 3 to 5 times higher than those of the films deposited by RF PACVD or ion beam process. The details of the atomic bond structure were analysed by Raman and NEXAFS spectroscopy. The change in the film properties for various bias voltages could be understood in the view of the $sp^2$ and $sp^3$ bond fraction in the deposited films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.332-332
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• 2010

We have successfully demonstrated the inkjet printing method to create $Al_2O_3$ films withouWe have successfully demonstrated the inkjet printing method to create $Al_2O_3$ films without a high temperature sintering process. In order to remove the coffee ring effect in the ink drop, we have introduced a co-solvent system in order to create Marangoni flow in the ink drop, which leads to the dense packing of ceramic powders on the substrate during inkjet process. The packing density of the Inkjet-printed $Al_2O_3$ films is around 60% (max. 70%) which is very high compared to the value obtained from the same material films by other conventional methods such as film casting, dip coating process, etc. The voids inside the films (which are around 40% of the entire film volume) are filled with the polymer resin (Cyanate ester) by the infiltration process. This resin infiltration is also implemented by the inkjet printing process right after the Ah03 film ink-jetting process. The microstructures of the printed $Al_2O_3$ films are investigated by Scanning Electron Microscope (SEM) to understand the degree of packing density in the printed films. The inkjet-printed $Al_2O_3$ films have been characterized to investigate its thickness and roughness. Quality factor of the printed $Al_2O_3$ film is also measured to be over 300 at 1MHz.

• Journal of Advanced Marine Engineering and Technology
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• v.28 no.2
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• pp.300-308
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• 2004

The formation mechanism of anodic oxide films on Mg alloys when anodized in NaOH solution. was investigated by focusing on the effects of anodizing potential. Al content. and anodizing time. Pure Mg and Mg-Al alloys were anodized for 10 min at various potentials in NaOH solutions. $Mg(OH)_2$ was generated by an active dissolution reaction at the surface. and the product was affected by temperature. The intensity ratio of $Mg(OH)_2$ in the XRD analysis decreased with increasing applied potential. while that of MgO increased. The anti-corrosion properties of anodized specimens at each constant potential were better than those of non-anodized specimens. The specimen anodized at an applied potential of 3 V had the best anti-corrosion property. And the intensity ratio of $Mg_{17}Al_{12}$/Mg increased with aluminum content in Mg-Al alloys. During anodizing. the active dissolution reaction occurred preferentially in ${\beta}\;phase(Mg_{17}Al_{12})$ until about 4 mins. and then the current density increased radually until 7 mins. The dissolution reaction progressed in a phase(Mg) which not formed the intermetallic compound. which had a lower Al content. In the anodic polarization test of $0.017\;mol{\cdot}dm^-3$ NaCl and $0.1\;mol{\cdot}dm^-3\;Na_2SO_4$ at 298 K. the current density of Mg-15 mass% Al alloy anodized for 10 mins increased. since the anodic film that forms on the a phase is a non-compacted film. The anodic film on the phase for 30 mins was a compact film as compared with that for 10 mins.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.409-409
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• 2011

All solid-state thin film lithium batteries have many applications in miniaturized devices because of lightweight, long-life, low self-discharge and high energy density. The research of cathode materials for thin film lithium batteries that provide high energy density at fast discharge rates is important to meet the demands for high-power applications. Among cathode materials, lithium manganese oxide materials as spinel-based compounds have been reported to possess specific advantages of high electrochemical potential, high abundant, low cost, and low toxicity. However, the lithium manganese oxide has problem of capacity fade which caused by dissolution of Mn ions during intercalation reaction and phase instability. For this problem, many studies on effect of various transition metals have been reported. In the preliminary study, the Sn-substituted LiMn2O4 thin films prepared by pulsed laser deposition have shown the improvement in discharge capacity and cycleability. In this study, the thin films of LiMn2O4 and LiSn0.0125Mn1.975O4 prepared by RF magnetron sputtering were studied with effect of deposition parameters on the phase, surface morphology and electrochemical property. And, all solid-state thin film batteries comprised of a lithium anode, lithium phosphorus oxy-nitride (LiPON) solid electrolyte and LiMn2O4-based cathode were fabricated, and the electrochemical property was investigated.

• Polymer(Korea)
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• v.28 no.5
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• pp.374-381
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• 2004

Gas permeability of low density polyethylene (LDPE) film containing zeolite powder for $CO_2,\;O_2$ and $N_2$ were investigated. Zeolite powders modified by cations or surfactant were compounded with LDPE to produce $20 wt\%$ masterbatch. After blending the masterbatch with LDPE, zeolite filled films were prepared by the blown film process. Finally, the composite films containing zeolite loadings of 0, 3,5, and $10 wt\%$ were produced. A gas permeability apparatus based on the variable volume principle was designed to analyze the characteristics of films. Experiments showed a general trend that gas permeabilities first decreased and then increased as the zeolite content was increased. Surfactant modified zeolite showed a better interfacial adhesion with the matrix, but the film did not show a discernible difference in gas permeability compared with the other modified films. The difference of temperature dependences in the gas permeabilities of composite films was slightly smaller than that of LDPE film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.45-45
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.93-96
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• 1990

The characteristics of an inverted staggered-type hydrogenated amorphous silicon thin film transistor has been analyzed by employing numerical simulation. The field effect mobility and threshold voltage are characterized as a function of density of deep and tail states and lattice temperature. It has been found that the density of deep states plays an important role of determining the threshold voltage, while the field effect mobility are very sensitive to the slope of band tail states. Also, the numerically temperature dependence of field effect mobility and threshold voltage has been in good agreements with the experimental results.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.12
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• pp.48-53
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• 2011

Polymer thin films were prepared by capacitively coupled plasma polymerization process for application of gate insulator. The polymer thin films revealed to form polymer layers with original properties of the monomer. Among the plasma polymer thin films, the styrene polymer having large number of phenyl sites revealed higher dielectric constant of k=3.7 than that of conventional polymer. The plasma polymerized styrene thin film revealed no hysteresis characteristics and low leakage current density of $1{\times}10^{-8}[Acm^{-2}]$ at field strength of $1[MVcm^{-1}]$, which measured by I-V and C-V measurements using MIM and MIS devices.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.59-64
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• 1996

InSb MIS devices prepared by remote PECVD SiO$_{2}$ were fabricated. The SiO$_{2}$ films on InSb were deposited at atemperature range of 67~190$^{\circ}$C. The effects of deposition temperature on the structural characteristics of the SiO$_{2}$ films evaluated Auger electron spectroscopy showed that atomic raito of silicon to oxygen was 0.5 and composition toms were distributed uniformaly throuout the oxide film. The transition region is about 100$\AA$ for SiO$_{2}$/InSb interface. The leakage current density at 1MV/cm and the breakdownelectric field of the MiS device using SiO$_{2}$ film deposited at 105$^{\circ}$C were about 22 nA/cm$^{2}$ and 3.5MV/cm, respectively. The interface-state density at mid-bandgap extracted from 1 MHz high frequency C-V measurement was about 2X10$^{11}$ cm$^{-2}$eV$^{-1}$.