• Corrosion Science and Technology
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• v.17 no.4
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• pp.166-175
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• 2018

In this study, the electrochemical properties of CP-Ti (commercially pure titanium) and Ti-64 (Ti-6Al-4V) were evaluated and the effect of hydrofluoric acid on corrosion resistance and electrochemical properties was elucidated. Additive manufactured materials were made by DMT (Directed Metal Tooling) method. Samples were heat-treated for 1 hour at $760^{\circ}C$ and then air cooled. Surface morphologies were studied by optical microscope and SEM. Electrochemical properties were evaluated by anodic polarization method and AC-impedance measurement. The oxide film formed on the surface was analyzed using an XPS. The addition of HF led to an increase in the passive current density and critical current density and decreased the polarization resistance regardless of the alloys employed. Based on the composition of the oxide film, the compositional difference observed by the addition of HF was little, regardless of the nature of alloys. The Warburg impedance obtained by AC-impedance measurement indicates the dissolution of the constituents of CP-Ti and Ti-64 through a porous oxide film.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1243-1245
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• 1994

SiN films were deposited in $Si_2H_6$(99.9%), $NH_3$(99.99%) gas mixture with carrier gas $N_2$ on Si substrate by ArF Excimer Laser CVD. SiN film deposition conditions that are substrate temperature and Laser average power were varied in order to investigate the dependence of SiN film on the condition. A post-deposition anneal was performed to examine variation of fixed charge density in the films. The deposition rate was increased as the substrate temperature and Laser power were increased during film deposition. The refractive index was increased with increasing substrate temperature, but it didn't have the dependence on Laser power. The fixed charge density was decreased when a post-deposition anneal was performed.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.289-293
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• 1994

Thin films of YB $a_{2}$C $u_{3}$$O_{7-x}$ supercondYB $a_{2}$C $u_{3}$$O_{7-x}$uctor were prepared on (100) SrTi $O_{3}$ substrates by pulsed laser deposition using visible light laser. Q-switched Nd:YAG(532 nm, 30 ns) pulsed laser was used for deposition. The effects of substrate temperature and oxygen pressure during deposition on films were studied. Critical current density of 2.93*10$^{6}$ A/c $m^{2}$ at 77K and Tc(zero)=91.7K were obtained from the film prepared with Tsub=745.deg. C and $P_{02}$=200 mTorr. XRD analysis showed that the grown film has c-axis normal orientation to the substrate surface and has single phase. Surface morphology of the film has been improved by interfering the plume ejected from YB $a_{2}$C $u_{3}$$O_{7-x}$ target.arget.t.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.238-244
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• 1999

Pt/SBT/Pt capacitors were fabricated using the MOD-derived $SrBi_{2x}Ta_2O_9$ (SBT) films and their ferroelectic and leakage current characteristics were investigated with post annealing at 400~$800^{\circ}C$. Although the MOD-derived SBT film exhibited the hysteresis loop typical for the leaky film, the well-saturated ferroelectric hysteresis loop could be obtained by post annealing the Pt/SBT/Pt capacitors at $550^{\circ}C$~$800^{\circ}C$. The remanent polarization $2P_r$ of the SBT film exhibited a maximum value of 9.72$\mu\textrm{cm}^2$ with post annealing at $600^{\circ}C$, and then decreased with increasing the post annealing temperature above $600^{\circ}C$. The MOD-derived SBT films exhibited the high leakage current density of ~$10^{-3} \textrm{A/cm}^2$ at 75kV/cm. With post annealing the Pt/SBT/Pt capacitor at 600~$800^{\circ}C$, however, the leakage current density decreased remarkably to less than $10^{-6}\textrm{A/cm}^2$ at 75kV/cm.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.138.1-138.1
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• 2013

We present the low temperature (${\leq}1,000^{\circ}C$) vacuum sublimation behavior of an e-beam evaporative deposited on a SiC film and a method to reduce the vacuum sublimation through an ion beam process. The density of the SiC film deposited using the e-beam evaporation method was ~60% of the density of the bulk source material. We found that the sublimation became appreciable above ${\sim}750^{\circ}C$ under $1.5{\times}10^{-5}$ torr pressure and the sublimation rate increased with an increase in temperature, reaching ~70 nm/h at $950^{\circ}C$ when the coated sample was heated for 5 h. When the film was irradiated with 70 keV N+ ions prior to heating, the sublimation rate decreased to ~23 nm/h at a fluence of $1{\times}10^{17}\;ions/cm^2$. However, a further increase in fluence beyond this value or an extended heating period did not change (decrease or increase) the sublimation rate any further.

• Journal of the Korean institute of surface engineering
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• v.51 no.6
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• pp.421-429
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• 2018

In this study, various electrochemical experiments were carried out to compare the corrosion characteristics of AA5052-O, AA5083-H321 and AA6061-T6 in seawater. The electrochemical impedance and potentiostatic polarization measurements showed that the corrosion resistance is decreased in the order of AA5052-O, AA5083-H321 and AA6061-T6, with AA5052-O being the highest resistant. This is closely associated with the property of passive film formed on three tested Al alloys. Based on the slope of Mott-Schottky plots of an n-type semiconductor, the density of oxygen vacancies in the passive film formed on the alloys was determined. This revealed that the defect density is increased in the order of AA5052-O, AA5083-H321 and AA6061-T6. Considering these facts, it is implied that the addition of Mg, Si, and Cu to the Al alloys can degrade the passivity, which is characterized by a passive film structure containing more defect sites, contributing to the decrease in corrosion resistance in seawater.

• Corrosion Science and Technology
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• v.20 no.3
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• pp.112-117
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• 2021

Inductively coupled plasma magnetron sputtering (ICPMS) has the advantage of being able to dramatically improve coating properties by increasing the plasma ionization rate and the ion bombardment effect during deposition. Thus, this paper presents the comparative results of CrN films deposited by direct current magnetron sputtering (dcMS) and ICPMS systems. The structure, microstructure, and mechanical and corrosive properties of the CrN coatings were investigated by X-ray diffractometry, scanning electron microscopy, nanoindentation, and corrosion-resistance measurements. The as-deposited CrN films by ICPMS grew preferentially on a 200 plane compared to dcMS on a 111 plane. As a result, the films deposited by ICPMS had a very compact microstructure with high hardness. The nanoindentation hardness reached 19.8 GPa, and 13.5 GPa by dcMS. The corrosion current density of CrN film prepared by ICPMS was about 9.8 × 10^-6 mA/cm², which was 1/470 of 4.6 × 10^-3 mA/cm², the corrosion current density of CrN film prepared by dcMS.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.27-30
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• 2001

Electromigration Phenomena in Al-1%Si thin film interconnections under DC and PDC conditions were investigated. Thin film interconnections with $SiO_2$ and PSG/$SiO_2$ dielectric passivation layer were formed by a standard photolithography process method and test line lengths were 100, 400, 800, 1200, and 1600 $\mu\textrm{m}$. The current density of $1.19\times10^7\textrm{A/cm}^2$ was stressed in Al-1%Si thin film interconnections under DC condition. The current density of $1.19\times10^7\textrm{A/cm}^2$ was also applied under PDC condition at the frequency of 1 Hz with the duty factor of 0.5. The electromigration resistance of PSG/SiO2 dielectric passivation test line was stronger than $SiO_2$ dielectric passivation test line. The lifetime under PDC was 2-4 times longer than DC condition. As the thin film interconnection line increased, the lifetime decreased and saturated over the critical length. Failure patterns by an electromigration were dominated by void-induced electrical open and hillock-induced electrical short.

• Progress in Superconductivity
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• v.5 no.1
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• pp.75-79
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• 2003

YBCO films were deposited with various thicknesses from 100nm to 1.6$\mu\textrm{m}$ on single crystal $SrTiO_3$ substrates by pulsed laser deposition (PLD). The effects of different deposition conditions, especially different deposition rates by means of changing the pulsed laser frequency up to 200Hz, on the J$_{c}$ value were studied. For YBCO film with the thickness of 200nm, the $J_{c}$ value of $2.1MA/\textrm{cm}^2$ has been achieved under the high deposition rate of 3.2nm/s (190nm/min). The $J_{c}$ can be maintained greater than $1M/\textrm{cm}^2$ with the thickness less than 1$\mu\textrm{m}$. The X-ray analysis was used to examine the texture, crystallization and surface quality. The SEM was employed to analyze the surface of YBCO, and it was shown the surface of YBCO film became rougher with increasing the thickness. There were many large singular outgrowths and networks of outgrowths on the surface of YBCO films which lowered the density of thick YBCO film. The outgrowth network was probably the a-axis YBCO corresponding to XRD $\theta$-2$\theta$scan and $\chi$-scan which were used to characterize a-axis orientation of YBCO film. The reason for J$_{c}$ declining with increasing the thickness was studied and discussed.sed.