• Title/Summary/Keyword: film density

Search Result 2,367, Processing Time 0.025 seconds

RF Glow Discharge and TiN Thin Film Characteristics in a Plane Electrode System (평판형 전극계의 RF 글로우 방전특성 및 TiN 박막특성)

  • Kwak, D.J.;Kim, D.H.;Kim, H.J.;Park, C.H.
    • Proceedings of the KIEE Conference
    • /
    • 1996.07c
    • /
    • pp.1838-1840
    • /
    • 1996
  • In order to study the relationship between the physical properties of glow discharge plasma and the physical behavior of TiN thin film, electrical characteristics of RF discharge plasma driven at 13.56MHz in a parallel-plate electrode system were measured. Plasma parameters, such as electron density and temperature, are also studied since they may be considered as one of the very important factors deciding the physical properties of TiN thin film under given conditions of applied biasd voltage and pressure. The TiN thin film were fabricated over a wide range of discharge conditions, and some of the general relationships between the measured plasma parameters and the properties of TiN thin film were discussed.

  • PDF

Pure Culture Assay with Streptomyces viridosporus T7A for Biodegradability Determination of Oxidized Potato Starch/Polyethylene Films

  • Kim, Meera;Kim, Sung-Hong
    • Preventive Nutrition and Food Science
    • /
    • v.6 no.2
    • /
    • pp.112-116
    • /
    • 2001
  • Oxidized potato starch/polyethylene (PE) cast films were prepared with different percentages of linear low density PE (LLDPE), oxidized potato starch and prooxidant. For the determination of biodegradability of the films, lignocellulose-degrading Streptomyces viridosporus T7A (ATCC 39115) was used. Films were chemically disinfected and incubated with S. viridosporus by shaking at 100 rpm at 37$^{\circ}C$ for eight weeks. Hydroxyl indices of the films by Fourier-Transform Infrared Spectroscopy, mechanical Properties of the films by Instron and film morphology by scanning electron microscope (SEM) were measured. The hydroxyl index of the film containing the oxidized potato starch incubated with S. viridosporus T7A was higher than that of the corresponding control. All the films containing 5% and 10% oxidized starch showed a decrease of tensile strength on the films after incubation when the corresponding uninoculated film was compared. In the oxidized starch/PE film incubated with S. viridosporus T7A, partial destruction of starch and PE was examined by SEM.

  • PDF

A calculation on the Metal-Film Mixing by Intense Pulse Ion Beam (IPIB)

  • Le, X.Y.;Yan, S.;Zhao, W.J.;Wang, Y.G.;Xue, J.M.
    • Journal of the Korean Vacuum Society
    • /
    • v.12 no.S1
    • /
    • pp.74-78
    • /
    • 2003
  • In this paper, we studied, by numerical calculation, a system, which was composed of metal-film and metal-substrate irradiated by IPIB with beam ion energy 250 keV, current density 10 to 250 A/$\textrm{cm}^2$. While the IPIB irradiation was going on, an induced effect named mixing occurred. In this case, metal-film and part of metal-substrate melted and mixed. The mixing state was kept as it was in melting phase due to the fast cooling rate. Our works were simulating the heating and cooling process via our STEIPIB program and tried to find proper parameters for a specific film-substrate system, 500 nmtitanium film coated on aluminum, to get best mixing results. The parameters calculated for such Ti-Al system were compared with the experimental results and were in good accordance to the experimental results.

High $T_c$ Superconductor Applications and Thick Film Preparation

  • Soh, Dea-Wha;Zhanguo Fan
    • Journal of information and communication convergence engineering
    • /
    • v.1 no.2
    • /
    • pp.63-66
    • /
    • 2003
  • High $T_c$ superconducting lines will be applied as key materials in the areas of power transmission line; magnetic levitation of vehicle; magnetic separation; magnetic energy storage and marine propulsion. A combination method of electrophoresis deposition and zone-melting for preparation of YBaCuO tape is proposed. The submicron particle powder of YBaCuO made by sol-gel method is used in the electrophoresis process. A 40∼50 ${\mu}\textrm{m}$ thickness of YBaCuO film on Ag plate could be deposited in about three minutes. After deposition the film is rolled and heat treated in order to increase the density and the adhesion of the film to the Ag plate. Silver(Ag) and lead oxide(PbO) were added in the YBaCuO powder in order to reduce its melting point. The YBaCuO coating with controlled Ag and PbO contents was preliminarily zone-melted at about $945^{\circ}C$.

Fabrication of Permalloy Thin Film by Electrodeposition (전해법에 의한 퍼말로이 박막의 제조)

  • Choi, Young-Sik;Kim, Seong-Eun;Kang, Tak;Sohn, Hun-Joon
    • Journal of the Korean institute of surface engineering
    • /
    • v.27 no.4
    • /
    • pp.185-192
    • /
    • 1994
  • The electrodeposition of permalloy thin film on various substrates was carried out using a paddle cell. The magnetic properties of film deposited were affected mostly by the Fe content in permalloy film and the effect of heat treatment in the presence of applied magnetic field was investigated. The optimum conditions for the electrodeposition of permalloy for the application of thin film head were presented in terms of iron concentration in bath and applied current density.

  • PDF

A Study on Electrical Characteristics of the PLZT Thin Film Acorrding to Thickness for DRAM Capacitor (DRAM소자용 PLZT 박막의 두께에 따른 전기적 특성에 관한 연구)

  • 박용범;장낙원;마석범;김성구;최형욱
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1999.11a
    • /
    • pp.278-281
    • /
    • 1999
  • PLZT thin films on Pt/Ti/SiO$_2$/Si substrate were fabricated with different Thickness by pulsed laser deposition. 14/50/50 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$_{t}$=985 at 5000$\AA$, and $\varepsilon$$_{t}$=668 at 2000A. P-EI hysteresis loop of 14/50/50 PLZT thin film was slim ferroelectric. Leakage current density of 14/50/70 PLZT thin film was 10$^{-8}$ A/$\textrm{cm}^2$ at 2000$\AA$.EX>.

  • PDF

The change of magnetic microstructure with Co-22%Cr film thicknesses (Co-22%Cr 자성합금박막에서 박막두계에 따른 자기미세구조 변화)

  • 송오성
    • Journal of the Korean institute of surface engineering
    • /
    • v.31 no.5
    • /
    • pp.261-265
    • /
    • 1998
  • We investigated compositional separation of Co-23%Cr magnetic alloy thin films with varying film thicknesses. Saturation magnetization and magnetic microstructures were investigated using vibrating sample magnetometer (VSM) and scanning probe microscope (SPM), respectively. Saturation magnetization was as 700 emu/cc for films below 50 nm-thick, and changed to 430 emu/cc for the ones above 2000 nm-thick. This may be due to increment of molar volume of Cr-enriched phase as film thickness increases. The surface grain size in AFM (atomic force microscope) measurement becomes larger as film thickness increases. The MFM (magnetic force microscope) reveals that magnetic microstructure is changed from the fine spherical domains to the maze type domains as film thickness increases. We conclude that employing thickness of Co-22%Cr films below 50 nm is favorable for high density recording in order to enhance perpendicular saturation magnetization and SNR (signal to noise ratio).

  • PDF

A STUDY ON COPPER DEPOSITION PROCESS DURING ANODIC OXIDATION OF ALUMINIUM ALLOY

  • Koh, I.S.;Han, S.H.;Shin, D.H.
    • Journal of the Korean institute of surface engineering
    • /
    • v.32 no.3
    • /
    • pp.444-446
    • /
    • 1999
  • The structure and composition of anodic films, formed on 6063 commercial aluminium alloy at constant current density of $1.5A/^dm2$ with various superimposed cathodic current ratio, in the range 0~33%, in the 11% $H_2SO_4$ with various concentration of $CuSO_4{\cdot}5H_2O$, in the range 0~75 g/l, without cathodic current are generally porous-type and no sign of Cu co-deposition appearance, suggesting that cathodic current is an important factor in the Cu co-deposition. Comparison with the anodic film thickness measurement results obtained from anodic film formed by direct anodic current and anodic film formed by superimposed various portion of cathodic current, the portion of cathodic current of input current increases with decrease of anodic film thickness and increases with increase of concentration of $Cu_2S{\;}and{\;}Cu_2O$ in the anodic film.

  • PDF

Development of High Voltage and High Energy Density Capacitor for Pulsed Power Application (펄스파워용 고전압 고에너지밀도 커패시터 개발)

  • 이병윤;정진교;이우영;박경엽;이수휘;김영광
    • The Transactions of the Korean Institute of Electrical Engineers B
    • /
    • v.52 no.5
    • /
    • pp.203-210
    • /
    • 2003
  • This paper describes high voltage and high energy density capacitor developed for pulsed power applications. The rated voltage of the developed capacitor is DC 22 [kV], the capacitance is 206 [$\mu$F] and the energy density is about 0.7 [kJ/kg]. Polypropylene film and kraft paper were used as the dielectrics. The ratio of the thickness of each dielectric material which consists of the composite dielectric structure, stacking factor and the termination method were determined by the charging and discharging tests on model capacitors. In terms of energy density, the developed capacitor has higher energy density compared with the products of foreign leading companies. In addition, it has been proved that the life expectancy can be more over 2000 shots through the charging and discharging test. The voltage reversal factor was 20%. This capacitor can be used as numerous discharge applications such as military, medical, industrial fields.

Quantitative Evaluation of Dislocation Density in Epitaxial GaAs Layer on Si Using Transmission Electron Microscopy

  • Kim, Kangsik;Lee, Jongyoung;Kim, Hyojin;Lee, Zonghoon
    • Applied Microscopy
    • /
    • v.44 no.2
    • /
    • pp.74-78
    • /
    • 2014
  • Dislocation density and distribution in epitaxial GaAs layer on Si are evaluated quantitatively and effectively using image processing of transmission electron microscopy image. In order to evaluate dislocation density and distribution, three methods are introduced based on line-intercept, line-length measurement and our coding with line-scanning method. Our coding method based on line-scanning is used to detect the dislocations line-by-line effectively by sweeping a thin line with the width of one pixel. The proposed method has advances in the evaluation of dislocation density and distribution. Dislocations can be detected automatically and continuously by a sweeping line in the code. Variation of dislocation density in epitaxial GaAs films can be precisely analyzed along the growth direction on the film.