• Title/Summary/Keyword: film density

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Comparative Study on the Film Cooling Effectiveness of 15° Angled Anti-Vortex Hole and 30-7-7 Fan-Shaped Hole Using PSP Technique (PSP를 이용한 15° 반와류 홀과 30-7-7 팬형상 홀의 막냉각 효율 비교 연구)

  • Kim, Ye Jee;Park, Soon Sang;Rhee, Dong Ho;Kwak, Jae Su
    • The KSFM Journal of Fluid Machinery
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    • v.19 no.4
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    • pp.13-18
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    • 2016
  • The various film cooling hole shapes have been proposed for effective external cooling of gas turbine blade. In this study, the film cooling effectiveness by three different hole shapes (cylindrical hole, $15^{\circ}$ angle anti-vortex hole, 30-7-7 fan-shaped hole) were examined experimentally. Pressure Sensitive Paint (PSP) technique was used to measure the film cooling effectiveness. The coolant to mainstream density ratio was 1.0 and three blowing ratios of 0.5, 1.0, and 2.0 were considered. Results clearly showed that the effect of hole shape on the distribution of film cooling effectiveness. For the cylindrical hole case, the film cooling effectiveness decreased remarkably as the blowing ratio increased due to the jet lift off. Because of large hole exit area and low coolant momentum, the 30-7-7 fan-shaped hole case showed the highest film cooling effectiveness at all blowing ratio, followed by the anti-vortex hole case.

Preparation and Characterization of Poly(butyl acrylate)/Poly(methyl methacrylate) Composite Latex by Seeded Emulsion Polymerization

  • Ju, In-Ho;Hong, Jin-Ho;Park, Min-Seok;Wu, Jong-Pyo
    • Journal of the Korean Applied Science and Technology
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    • v.19 no.2
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    • pp.131-136
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    • 2002
  • As model waterborne acrylic coatings, mono-dispersed poly(butyl acrylate-methyl methacrylate) copolymer latexes of random copolymer and core/shell type graft copolymer were prepared by seeded multi-staged emulsion polymerization with particle size of $180{\sim}200$ nm using semi-batch type process. Sodium lauryl sulfate and potassium persulfate were used as an emulsifier and an initiator, respectively. The effect of particle texture including core/shell phase ratio, glass transition temperature and crosslinking density, and film forming temperature on the film formation and final properties of film was investigated using SEM, AFM, and UV in this study. The film formation behavior of model latex was traced simultaneously by the weight loss measurement and by the change of tensile properties and UV transmittance during the entire course of film formation. It was found that the increased glass transition temperature and higher crosslinking degree of latex resulted in the delay of the onset of coalescence of particles by interdiffusion during film forming process. This can be explained qualitatively in terms of diffusion rate of polymer chains. However, the change of weight loss during film formation was insensitive to discern each film forming stages-I, II and III.

Vertical Distribution of Bulk Density and Salts in a Plastic Film House Soil (깊이별 용적밀도가 다른 시설재배지 토양의 염류분포)

  • Kim, Pil-Joo;Lee, Do-Kyoung;Chung, Doug-Young
    • Korean Journal of Soil Science and Fertilizer
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    • v.30 no.3
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    • pp.226-233
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    • 1997
  • To investigate the salt accumulation in the plastic film house soils, bulk density, electrical conductivity(EC), exchangeable canons and water soluble anions were determined at different depths(0~60cm) in the salt-accumulated plastic film house soils in Yesan, Chungnam, Korea. Bulk density were increased from $1.2Mg/m^3$ to $1.5Mg/m^3$ as the depth changed from 0cm(top soil) to 30cm(subsoil) below the soil surface, whereas the bulk densities between 30cm to 60cm slightly decreased to $1.42Mg/m^3$. These changes of soil bulk densities might influence the porosity and pore size distribution, resulting in affecting the water flow throughout, soil layers. Electrical conductivity and Exchangeable sodium percentage(ESP) for 0 to 10cm soil layer were 5.08 dS/m and 6.4, respectively, while the EC was decreased to less than 1.63 dS/m in 20~30cm depth and about 0.7 dS/m. Salt accumulation patterns in the plastic film house soils might be influenced by the changes of the bulk densities in soil.

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Disjoining pressure of nanoscale thin film on solid substrate (고체 위의 박막에서의 분리압력 및 안정특성에 관한 연구)

  • Han, Min-sub
    • Proceedings of the KSME Conference
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    • 2007.05b
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    • pp.1912-1915
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    • 2007
  • The disjoining pressure is critical in modeling the transport phenomena in small scales. They are very useful in characterizing the non-continuum effects that are not negligible in heat and mass transports in the film of less than submicro-scales. We present he disjoining pressure of thin film absorbed on solid substrate using Molecular Dynamics Simulation (MD). The disjoining pressure with respect to the film thickness is accurately calculated in the resolution of a molecular scale. The characteristics of the pressure are discussed regarding the molecular nature of the fluid system like molecular diameter and intermolecular interaction. Also, the MD results are compared with those based on the macroscopic approximation of the slab-like density profile. Significant discrepancy is observed when the effective film thickness is less than several molecular diameter

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The Mechanical Property of Electroplated Cu Film

  • Cho, Chul-Ho;Ha, Seung-Mo;Ahn, Yoo-Min;Kim, Dae-Kun;Lee, Jae-Ho
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.10b
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    • pp.139-140
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    • 2002
  • This paper discusses the effect of plating condition on the mechanical property of electroplated Cu film. Current density, the amount of the organic additives was found to affect the residual stress of electroplated copper film. The result show that, in the case of residual stress, the copper film deposited at higher additive result in lower residual stress and plating current by $15mA/cm^2$ induced a better result than any other ones.

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Characterization of F- and Al-codoped ZnO Transparent Conducting Thin Film prepared by Sol-Gel Spin Coating Method

  • Nam, Gil Mo;Kwon, Myoung Seok
    • Journal of the Korean Ceramic Society
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    • v.53 no.3
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    • pp.338-342
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    • 2016
  • ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

Thin Film Si-Ge/c-Si Tandem Junction Solar Cells with Optimum Upper Sub- Cell Structure

  • Park, Jinjoo
    • Current Photovoltaic Research
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    • v.8 no.3
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    • pp.94-101
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    • 2020
  • This study was trying to focus on achieving high efficiency of multi junction solar cell with thin film silicon solar cells. The proposed thin film Si-Ge/c-Si tandem junction solar cell concept with a combination of low-cost thin-film silicon solar cell technology and high-efficiency c-Si cells in a monolithically stacked configuration. The tandem junction solar cells using amorphous silicon germanium (a-SiGe:H) as an absorption layer of upper sub-cell were simulated through ASA (Advanced Semiconductor Analysis) simulator for acquiring the optimum structure. Graded Ge composition - effect of Eg profiling and inserted buffer layer between absorption layer and doped layer showed the improved current density (Jsc) and conversion efficiency (η). 13.11% conversion efficiency of the tandem junction solar cell was observed, which is a result of showing the possibility of thin film Si-Ge/c-Si tandem junction solar cell.

Synthesis of Diamond Thin Film by RF PACVD from $\textrm{H}_2$-$\textrm{CH}_4$ Mixed Gas (고주파 플라즈마 CVD에 의한 $\textrm{H}_2$-$\textrm{CH}_4$ 계로부터 다이아몬드 박막의 합성)

  • 임헌찬
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.36T no.3
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    • pp.13-18
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    • 1999
  • Diamond film was deposited on Si wafer using $\textrm{H}_2$ and $\textrm{CH}_4$ mixed gas by RF PACVD. Prior to deposition, mechanical scratching was done to improve density of nucleation sites with diamond paste of $1\mu\textrm{m}$ The microstructure of deposited film was studied at various methane concentrations. The deposited film was characterized by XRD(X-tay diffraction), SEM(Scanning Electron Microscopy) and Raman Spectroscopy The deposited diamond film showed that the crystallite was increased at the lower methane concentration.

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Preparation and Characterization of Plasma Polymerized Methyl Methacrylate Thin Films as Gate Dielectric for Organic Thin Film Transistor

  • Ao, Wei;Lim, Jae-Sung;Shin, Paik-Kyun
    • Journal of Electrical Engineering and Technology
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    • v.6 no.6
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    • pp.836-841
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    • 2011
  • Plasma polymerized methyl methacrylate (ppMMA) thin films were deposited by plasma polymerization technique with different plasma powers and subsequently thermally treated at temperatures of 60 to $150^{\circ}C$. To find a better ppMMA preparation technique for application to organic thin film transistor (OTFT) as dielectric layer, the chemical composition, surface morphology, and electrical properties of ppMMA were investigated. The effect of ppMMA thin-film preparation conditions on the resulting thin film properties were discussed, specifically O-H site content in the pMMA, dielectric constant, leakage current density, and hysteresis.

Electrical Properties of Plasma Polymerized Hexamethyldisiloxane Thin Film (플라즈마 중합법에 의한 헥사메틸디실록산 박막의 전기적 특성)

  • 이상희;이덕출
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.1
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    • pp.43-47
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    • 2001
  • Plasma polymerized hexamethyldisiloxane thin film was fabricated by employing an inter-electrode capacitively coupled type apparatus under the following conditions : carrier gas flow rate of 11 sccm, reaction pressure of 0.1 torr, discharge frequency of 13.56 MHz and discharge power of 30∼90 W. Polymerization rate of thin film fabricated at the discharge power of 90W is 32.5nm/min. Relative dielectric constant and dielectric loss tangent of thin film shows 3.2∼3.8 and 2.6x10$\^$-3/∼4.51x10$\^$-3/ respectively in the frequency range of 1 kHz∼1 MHz. As the annealing temperature is increased, the relative dielectric constant gradually decreases while the dielectric loss tangent increases. The current density increase gradually with increasing annealing temperature and electric field. The electric conduction of the heaxamethyldisiloxane thin film shows Schottky effect.

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