• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.262-267
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• 2003

The heteroepitaxial ZnO thin film on sapphire (0001) substrate was prepared by an off-axis Radio Frequency(RF) magnetron sputtering. The crystallinity of ZnO thin film was affected by deposition pressure, RF power, and substrate temperature. High quality heteroepitaxial ZnO thin film was obtained when the kinetic energy of sputtered particles is well harmonized with the surface mobility. In the result of Photoluminescence(PL) of heteroepitaxial ZnO thin film, Ultraviolet(UV) emissions at 3.36 and 3.28 eV were observed at low(17 K) and Room Temperature(RT). respectively. As the ZnO thin film was annealed in O$_2$ambient, the crystallinity was improved while UV emission was drastically decreased.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.303-307
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• 2007

ZnO thin films were prepared by pulsed laser deposition on amorphous fused silica substrates at different ambient $O_2$ pressures varying from 0.5 to 500 mTorr, to observe the effect of ambient gas on their crystalline structure, morphology and optical properties. Results of X-ray diffraction, scanning electron microscopy, atomic force microscopy and photoluminescence studies showed that crystallinity, surface features and optical properties of the films significantly depended on the oxygen background pressure during growth. A low oxygen pressure (0.5 mTorr) seems to be suitable for the growth of highly c-axis oriented and smoother films possessing a superior luminescent property. The films grown at the higher $O_2$ pressures (50-500 mTorr) were found to have many defects probably due to an excessive incorporation of oxygen into ZnO lattice. We speculate that the film crystallinity could be affected by the kinetics of atomic arrangement during deposition at the higher oxygen pressures.

• Journal of the Korean Ceramic Society
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• v.27 no.3
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• pp.401-411
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• 1990

Deposition of diamond films on Si(100) from the mixtures of methane and hydrogen were investigated using hot W filament CVD method. The nucleation density could be increased thousandfold by surface treatment with SiC powder. Upon oxygen addition to the mixture, crystal facets became developed more clearly by selectively removing non-diamond carbons, but the film growth rate generally decreased. However, at a very high methane content(e.g. 10%), a small amount of oxygen addition has resulted in an increase in the film deposition rate presumably by promotion of methane decomposition. When the gas pressure was varied, the growth rate exhibited a maxiumum at around 20torr and the film crystallinity steadily improved with the pressure increase. The observed variation of the growth rate by oxygen addition was discussed in terms of its role in the pyrolysis and the subsequent gas phase reactions.

• Textile Coloration and Finishing
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• v.21 no.4
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• pp.63-67
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• 2009

m-Aramid dissolved in N,N-dimethylacetamide (DMAc), were coagulated in different coagulants such as water, methanol, ethanol, propanol and butanol. Various concentrations and temperatures of the coagulants were also used to evaluate dyeing properties of coagulated m-aramid films. Field emission scanning electron microscopy (FE-SEM) was employed to investigate the surface morphology of m-aramid films. Wide angle X-ray diffraction (WAXD) was conducted in order to measure crystallinity change of mcaramid fibers and films. WAXD patterns showed that crystallinity of m-aramid fibers was reduced after film formation. In addition, color depth (K/S value) was measured and the results revealed that the film coagulated in water possessed fairly enhanced color depth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.452-455
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD(radio frequency plasma-assisted chemical vapor deposition). In order to increase the nucleation density, the WC-Co substrate was polished with 3$\mu\textrm{m}$ diamond paste. And the WC-Co substrate was pretreated in HNO$_3$: H$_2$O = 1:1 and O$_2$ plasma. In H$_2$-CH$_4$gas mixture, the crystallinity of thin film increased with decreasing CH$_4$concentration at 800W discharge power and 20torr reaction pressure. In H$_2$-CH$_4$-O$_2$gas mixture, the crystallinity of thin film increased with increasing O$_2$concentration at 800W discharge power, 20torr reaction pressure and 4% CH$_4$concentration.

• Korean Journal of Materials Research
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• v.34 no.4
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• pp.215-222
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• 2024

Because collagen is inherently piezoelectric, research is being actively conducted to utilize it to harvest energy. In this study, a collagen solution was prepared using edible low-molecular-weight peptide collagen powder, and collagen films were fabricated using a dip coating method. The collagen films prepared by dip coating showed a smooth surface without defects such as pinholes or cracks. Dehydrothermal treatment of the collagen films was performed to induce a stable molecular structure through cross-linking. The collagen film subjected to dehydrothermal treatment at 110 ℃ for 24 h showed a thickness reduction rate of 19 %. Analysis of the collagen films showed that the crystallinity of the collagen film improved by about 7.9 % after dehydrothermal treatment. A collagen film-based piezoelectric nanogenerator showed output characteristics of approximately 13.7 V and 1.4 ㎂ in a pressure test of 120 N. The generator showed a maximum power density of about 2.91 mW/m² and an output voltage of about 8~19 V during various human body movements such as finger tapping. The collagen film-based piezoelectric generator showed improved output performance with improved crystallinity and piezoelectricity after dehydrothermal treatment.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.3
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• pp.124-128
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• 2020

Recently, many studies on growth of single crystal diamond using MPECVD have been conducted. The heteroepitaxial method is one of the methods for growing diamonds on a large-area substrate, and research on synthesis of single crystal diamonds using SrTiO₃, MgO, and sapphire substrates has been attempted. In addition, research is being conducted to reduce the internal stress generated during diamond growth and to improve the crystallinity of the diamond. The compressive stress generated therein causes peeling and bowing from the substrate. This study aimed to synthesize heteroepitaxial single crystal diamonds with high crystallinity by surface modification. A diamond thin film was first grown on a sapphire/Ir substrate by MPECVD, and then etched with H₂ gas to modified the morphology and roughness of the surface. A secondary diamond layer was grown on the surface, and the internal stress, crystallinity of the diamond were investigated. As a result, the fabrication of single crystal diamonds with improved crystallinity was confirmed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.73-73
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• 1998

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.11a
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• pp.24-24
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• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.164-168
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• 1996

The relation between crystallinity and thermal history in low density polyethylene thin films and their effect on electric conduction phenomena and dielectric breakdown was studied. The low density polythylene thin films obtained by the solution growth method heat-treated at 140[$^{\circ}C$] for 2 h and subsequently cooling to various ways. The degree of crystallinity was estimated by the X-ray diffraction measurement for the specimen of slowly cooling, ICE quenching and liquid nitrogen quenching. The result shows that the crystallinity decreases become faster as the cooling speed increased, and that conduction phenomenon is governed by the space charge limited current in high field. It was found that the dielectric breakdown field increases with an increase in cooling speed and test number in self-healing breakdown method.