• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.739-745
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• 2003

In $N_{x}$ films were deposited on soda-lime glass without substrate heating by reactive dc magnetron sputtering using indium (In) metal target. Depositions were carried out under various total gas pressures ( $P_{tot}$) of mixture gases (Ar+$N_2$ or He+$N_2$). He gas was introduced to $N_2$ gas in order to enhance the reactivity of nitrogen on film surface by the "penning ionization". Plasma impedance decreased greatly when 20% or more introduced the $N_2$ gas. This is due to the In $N_{x}$ layers formed on target surface because a secondary electron emission rate of InN is small compared with In metal. XRD patterns of the films revealed that <001> preferred oriented polycrystalline In $N_{x}$ films, where the crystallinity of the films was improved with decrease of $P_{tot}$ and with increase of $N_2$ flow ratio. The improvement of the crystallinity and stoichimetry of the In $N_{x}$ films were considered to be caused by an increase in the activated nitrogen radicals and also by an increase in the kinetic energy of sputtered In atoms arriving at growing film surface, which should enhance the chemical reaction and surface migration on the growing film surface, respectively. Furthermore, the films deposited using mixture gases of He+$N_2$ showed higher crystallinity compared with the film deposited by the mixture gases of Ar+$N_2$.$.EX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.36-39
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• 2002

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.1
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• pp.33-38
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• 2002

In this study, the metastable state diamond thin films have been deposited on Si substrates from methane-hydrogen and oxygen mixture using microwave plasma enhanced chemical vapor deposition (MPCVD) method. Effects in experimental parameters of MPCVD including methane concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. Diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)~5%(5sccm), oxygen concentration of 0~80%(2.4sccm), operating pressure of 30Torr~70Torr, deposition time of 1~32hr. SEM, XRD, and Raman spectroscopy were employed to analyze the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non-diamond phases, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.24-24
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• 1999

• Journal of Microbiology
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• v.42 no.4
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• pp.346-352
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• 2004

Poly(3-Hydroxybutyrate-co­3-Hydroxyvalerate), poly(3HB-co-3HV), copolyesters with a variety of 3HV contents (ranging from 17 to $60\;mol\%$) were produced by Alcaligenes sp. MT-16 grown on a medium containing glucose and levulinic acid in various ratios, and the effects of hydrophilicity and crystallinity on the degradability of the copolyesters were evaluated. Measurements of thermo-mechanical pro­perties and Fourier-transform infrared spectroscopy in the attenuated total reflectance revealed that the hydrophilicity and crystallinity of poly(3HB-co-3HV) copolyesters decreased as 3HV content in the copolyester increased. When the prepared copolyester film samples were non-enzymatically hydrolysed in 0.01 N NaOH solution, the weights of all samples were found to have undergone no changes over a period of 20 weeks. In contrast, the copolyester film samples were degraded by the action of extra­cellular polyhydroxybutyrate depolymerase from Emericellopsis minima W2. The overall rate of weight loss was higher in the films containing higher amounts of 3HV, suggesting that the enzymatic degra­dation of the copolyester is more dependent on the crystallinity of the copolyester than on its hydro­philicity. Our results suggest that the degradability characteristics of poly(3HB-co-3HV) copolyesters, as well as their thermo-mechanical properties, are greatly influenced by the 3HV content in the copoly­esters.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1019-1021
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• 1995

Light induced degradation of hydrogenated amorphous silicon(a-Si:H) are related to the number of weak dangling bonds which are thought to be responsible for the Staebler-Wronski effects, and caused the many photoelectric problems in applications of thin film transistors and solar cell, etc. In this paper, we deposited fluorinated amorphous silicon films(a-Si:H;F) with $SiH_4$ and $SiF_4$ gas mixture and investigated the effects of fluorine atoms on the evoluations of the crystallinity and improvements of light instability. We have found that micro-crystallinity produced in a-SI:H;F films and marked maximum value of 22% at the flow rate of $SiH_4:SiF_4$=2:10 sccm by UV spectrophotometer measurement, while n-Si:H film deposited with only $SiH_4$ gas showed no crystallinity. Light-induced degradation property of a-Si:H;F films is also improved which is mainly due to the etching effects of fluorine atoms on the weak Si-Si bonds and unstable hydrogen bonds. It is considered that involving fluorine atoms in a-Si:H films may contribute to the suppression of light-induced degradation and evolution of micro-crystallinity.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$increases in C1$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinity of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• Macromolecular Research
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• v.17 no.8
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• pp.580-584
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• 2009

The effects of crystallinity and radiation crosslinking on the physical properties of a microporous high density polyethylene (HDPE) film with Millad3988 as a nucleating agent were investigated. The pores of the HDPE film were affected by the crystallinity. The crystallinity of the HDPE films increased with increasing Millad3988 amount up to 0.1 wt% but decreased with further addition. The mechanical characteristics of the HDPE containing Millad3988 films improved with increasing irradiation dose up to 50 kGy, but decreased at 75 kGy due to severe degradation. The thermal shrinkage behavior of the HDPE films decreased with increasing radiation dose up to 50 kGy. The porosity of the stretched HDPEIMillad3988 films after ${\gamma}$-ray radiation increased with increasing y-ray radiation dose up to 50 kGy. The pores of the irradiated films were formed more easily by a stretching due to the formation of a crosslinked structure.

• International Journal of Industrial Entomology and Biomaterials
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• v.46 no.1
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• pp.9-15
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• 2023

Recently, a silkworm strain (tentatively named Sericinjam) producing 100% sericin cocoons has been studied in South Korea. In this preliminary study, the crystallinity, mechanical properties, and dissolution conditions of sericin from Sericinjam cocoons were examined. The Sericinjam cocoon could be dissolved in water at high temperature (120℃) and high pressure (HTHP method) in an autoclave and in a CaCl₂/H₂O/EtOH mixture (ternary solvent method), resulting in 82% and 97% dissolution after 30 min, respectively. The solution viscosity of the silk sericin formic acid (SSFA) solution obtained from sericin extracted using the ternary solvent method was higher than that obtained using the HTHP method; however, SSFA solutions obtained from sericin extracted from conventional Baekokjam cocoons yielded a higher solution viscosity. The crystallinity and breaking strength of the sericin film from Sericinjam cocoons were slightly lower, respectively, than those from Baekokjam cocoons. In contrast, the elongation at break of the Sericinjam sericin film obtained using the HTHP method was higher than that of the Baekokjam sericin film.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.57-77
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• 1998

Heteroepitaxial $Y_2O_3$ films were grown on a Si(111) substrate by ionized cluster beam deposition(ICBD) in ultra high vacuum, and its qualities such as crystllitnity, film stress, and morphological characteristics were investigated using the various measurement methods. The crystallinity was investigated by x-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED). Interface crystallinity was also examined by Rutherford backscattering spectroscopy(RBS) channeling, transmission electron microscopy(TEM). The stress of the films was measured by RBS channeling and XRD. Surface and interface morphological characteristics were investigated by atomic force microscopy (AFM) and x-ray scattering method. Comparing the interface with the surface characteristics, we can conclude that many defects at the interface region were generated by interface reaction between the yttrium metal and SiO2 layer and by ion beam characteristic such as shallow implantation, so that they influenced the film qualities. The film quality was dominantly depended on the characteristic temperature range. In the temperature range from $500^{\circ}C$ to $600^{\circ}C$, the crystallinity was mainly improved and the surface roughness was drastically decreased. On the other hand, in the temperature range from $600^{\circ}C$ to $700^{\circ}C$, the compressive stress and film density were dominantly increased, and the island size was more decreased. Also the surface morphological shape was transformed from elliptical shape to triangular. The film stress existed dominantly at the interface region due to the defects generation.