• 한국표면공학회지
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• 제23권2호
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• pp.18-23
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• 1990

Thin films of tin oxide were prepared by chemical vapor deposition (C.V>D) using the hydrolysis reaction of SnCl4, Deposition rate increased with the increase of temperature up to $500^{\circ}C$and then decreased at $700^{\circ}C$, Deposition rate with SnCl4 partial pressure showed RidealEley behavir. It was found that SnO2 thin film deposited at the temperature above $400^{\circ}C$ had(110) and (301) plane preferred orientation with crystallinity of rutite structure. Electrical resisvity of SnO2 thin film decreased with increase increase of deposition temperature and showed minimum value of 10-3 ohm at $500^{\circ}C$and than largely increased increased with further increase of deposition temperture.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.88-88
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• 2010

We synthesized molybdenum thin films deposited by RF magnetron sputtering and physicochemical analysis was performed. The physical and chemical properties of these films were examined with X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The obtained film at the oxygen ratio of 0% showed crystallinity of cubic Mo(110) phase. After the oxygen ratio increased more than 5% in the sputter gas, the molybdenum films were formed as an amorphous phase. The thickness of the Mo thin film was drastically decreased from 1000 nm to ca 70 nm after introduction of oxygen in the sputter gas confirmed by spectroscopic ellipsometer (SE) and scanning electron spectroscopy (SEM). The calculated band gap of the film deduced from SE data increased from 3.17 to 3.63 eV by addition of oxygen in the sputter gas. The roughness of the Mo film was examined with atomic force microscopy (AFM) and it was dramatically decreased by introducing of oxygen during sputtering. XPS results revealed that the ratio of metallic Mo species in the film decreased by the contents of Mo(VI) species increased at the ratio of oxygen increased in the sputter gas and fully oxidized at low content of oxygen in the sputter gas.

• 한국표면공학회지
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• 제52권1호
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• pp.6-15
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• 2019

Metal-halide perovskite (MHP) solar cell is a promising candidate for next-generation flexible devices and the BIPV (Building-integrated photovoltaics) because it can exhibit high power conversion efficiencies over 23%, good bendability and low processing cost. However, MHP solar cells are commonly fabricated by the spin coating that is not a reliable method to produce large-scale commercial solar cells. A shear coating can be one of the potential candidates for the large-scale deposition method of MHP films. In this work, the influences of the process parameters such as solvents of precursor solution, substrate temperature, concentrations of precursor solution, and annealing time on the thin film growth of MHP were investigated for the shear coating process. This study presents the possibility of the shear coating process for large-scaled perovskite film fabrication and reveals the role of process condition in the thin film growth of perovskites.

• 한국재료학회지
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• 제28권4호
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• pp.241-246
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• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

• Composites Research
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• 제31권2호
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• pp.63-68
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• 2018

열가소성 복합재료는 다양한 장점에도 불구하고 기계적 특성이 낮아 고성능 항공산업 분야에서는 제한적으로 사용되어 왔으나 최근 열가소성 방향족 폴리머 복합재들이 많이 연구/활용되고 있다. 본 연구에서는 대표적인 열가소성 방향족 폴리머인 PEEK와 PPS Neat 수지 필름을 DSC 기기를 이용하여 가열, 냉각 및 재 가열 사이클을 연속적으로 수행하여 유리전이온도 및 용융온도 등의 특성변화를 확인하고 냉각속도에 따른 결정화도(Crystallinity)의 차이를 평가하였다. 1차 가열단계에서 각 폴리머의 용융온도보다 높은 온도에 5분간 유지시켜 이전 열이력을 제거하였고 2차 냉각단계에서 냉각속도를 분당 2, 5, 10, 20 및 $40^{\circ}C$로 조절/적용함으로서 결정화반응을 제어하였으며, 3차 가열단계에서 재가열하여 용융엔탈피를 측정함으로서 결정화도 차이를 확인하였다. 높은 비정질 영역을 가진 시편의 첫 번째 가열시 냉각결정화 현상이 일어나고 뚜렷한 유리상 전이구역을 확인할 수 있었던 반면에 결정질 영역이 증가된 재가열시에는 냉각결정화 현상이 일어나지 않고 상대적으로 유리상 전이구역이 약해지는 것을 확인하였다. 2차 냉각단계에서 냉각속도가 느려짐에 따라 결정화도가 높아졌는데 PEEK의 경우 냉각속도의 차이에 따라 21.9~39.3% 결정화도를 보였으며, PPS는 29.1~31.2% 결정화도 차이를 얻을 수 있었다.

• 센서학회지
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• 제27권3호
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• pp.182-185
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• 2018

Zinc oxide (ZnO) thin films have the advantages of growing at a low temperature and obtaining high charge mobility (carrier mobility) [1]. Furthermore, the zinc oxide thin film can be used to control application resistance depending on its oxygen content. ZnO has the desired physical properties, a transparent nature, with a flexible display that makes it ideal for use as a thin-film transistor. Though these transparent flexible thin-film transistors can be manufactured in various manners, manufacturing large-area transistors using a solution process is easier owing to the low cost and flexible substrate. The advantage of being able to process at low temperatures has been attracting attention as a preferred method. However, in the case of a thin-film transistor fabricated through a solution process, it is reported that charge mobility is lower. To improve upon this, a method of improving the crystallinity through heat treatment and increasing electron mobility has been reported. However, as the heat treatment temperature is relatively high at $500^{\circ}C$, an application where a flexible substrate is absent would be more suitable.

• 한국막학회:학술대회논문집
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• 한국막학회 1996년도 추계 총회 및 학술발표회
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• pp.92-93
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• 1996

PVA membrane was widely used in the dehydration pervaporation process. PVA membrane showed remakable selectivity towed water and an excellent film-forming polymer, with a good resistance to orgamic solvents but it has poor stability in aqueous mixtures. Generally the PVA is manufactured by the hydrolysis reaction from poly vinyl acetate(PVAc) and so the degree of PVA hydrolysis is a major parameter for properties of PVA membrane such as the crystallinity and polarity.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.299-304
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• 2003

We discuss several key technologies of liquid crystal displays (LCDs) that share common features of all organic displays (AODs). An overview of the morphological effects associated with molecular ordering at interfaces on the Crystallinity and the carrier mobility in organic thin film transistors (OTFTs) is given from the viewpoint of the alignment mechanism for LCDs. Recent progress of improving the carrier mobility in the OTFTs is also reviewed.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.158-160
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• 2004

BiSrCaCuO thick films were fabricated by plasma enhanced chemical vapor deposition, and the crystallinity and the superconducting properties were investigated. The superconductivity was achieved at 20 K with an onset temperature of around 90 K in the film prepared at 72$0^{\circ}C$. From X ray diffraction analysis, the main superconducting phase in the films was the low Tc phase at 700∼75$0^{\circ}C$ and the high Tc phase at 750 ∼ 80$0^{\circ}C$.

• 한국결정학회지
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• 제11권3호
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• pp.167-172
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• 2000

CaTiO₃:Pr phosphor thin films were prepared on Si(100), ZnO/glass, Corning glass and ITO/glass by rf magnetron reactive sputtering. The effects of deposition parameters such as oxygen partial pressure, substrate temperature, and annealing conditions on crystallinity and compositional variation of the films were investigated. PL spectra of CaTiO₃:Pr phosphor thin films exhibited red regime peaking at 613 nm and enhanced PL intensity was observed for the film annealed in vacuum atmosphere as compared to the deposit annealed in N₂ environment.