• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.248-249
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• 2008

ZnO (Zinc Oxide) thin film can be applied to various devices. Recently, ZnO film has been promoted in transparent TFTs (thin film transistors) because of high transparency and low temperature process. In this paper, ZnO thin films were grown on glass with the three conditions of RF sputtering power, which are 50W, 75W, 100W. Their structural, electrical and optical properties were investigated by using XRD, UV-Visible spectrometer and 4-point probes. In the ZnO film with 50W process, good crystallinity, high transmittance, and high sheet resistance were shown. In conclusion, the ZnO film with 50W can be an optimal channel layer of TFTs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.33-36
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• 2004

Amorphous GaN film was deposited using a laser ablation of the highly densified GaN target. Through the surface morphological and compositional analysis of films deposited under various laser energies and Ar gas pressures, the film deposited under the pressure of 10 Pa were found to be amorphous GaN with the smooth surface. In particular, the film at 200 mJ/pulse showed the enhanced crystallinity and stoichiometric composition, compared with those of the films at relatively lower laser energy. The strong band-gap emission at 2.8 eV was observed from amorphous GaN film in the room temperature photoluminescence spectra, showing the highest efficiency in the film at 200 mJ/pulse under 10 Pa.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.985-986
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• 2006

The epitaxial $KTa_{0.524}Nb_{0.446}Ti_{0.03}O_3$ films with 3% Ti were investigated. Titanium (+4) substitution on the Nb/Ta site should reduce dielectric losses of KTN: Ti film by introducing an acceptor state. This acceptor state traps electrons due to oxygen vacancies that form during oxide film growth. KTN:Ti films were grown using pulsed laser deposition, and then annealed at different temperatures in oxygen ambient. The crystallinity, and surface morphology of KTN:Ti film were investigated using x-ray diffraction, and atomic force microscopy. The dielectric properties of Ti doped KTN films measured for unannealed and annealed films will be reported. Tunability and dielectric loss of as-deposited KTN:Ti film were determined to be 10% and 0.0134, respectively. For films annealed at $800^{\circ}C$ and $900^{\circ}C$, the dielectric loss decreased but with a decrease in tunability as well.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.589-592
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• 1999

This paper describes direct $\mu$C-Si/CaF$_2$/glass thin film growth by RPCVD system in a low temperature for thin film transistor (TFT), photovoltaic devices. and sensor applications. Experimental factors in a low temperature direct $\mu$ c-Si film growth are presented in terms of deposition parameters: SiH$_4$/H$_2$ ratio, chamber total pressure, substrate temperature, rf power, and CaF$_2$ buffer layer. The structural and electrical properties of the deposited films were studied by means of Raman spectroscopy, I-V, L-I-V, X-ray diffraction analysis and SEM. we obtain a crystalline volume fraction of 61%, preferential growth of (111) and (220) direction, and photosensitivity of 124. We achieved the improvement of crystallinity and electrical property by using the buffer layers of CaF$_2$ film.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1720-1723
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• 2000

Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.177-181
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• 2011

We have studied structural, optical, and electrical properties of the Al-doped ZnO (AZO) thin films being usable in transparent conducting oxides. The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of AZO for transparent conducting oxides, the RF power in sputtering process was varied as 40 W, 60 W, and 80 W, respectively. As RF power increased, the crystallinity of AZO thin film was decreased, the optical bandgap of AZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in RF power. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with increasing RF power. The structural, optical, and electrical properties of the AZO thin films were affected by Al dopant content in AZO thin film.

• Bulletin of the Korean Chemical Society
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• v.35 no.8
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• pp.2505-2511
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• 2014

Indium oxide nanocrystals ($In_2O_3$ NCs) with sizes of 5.5 nm-10 nm were synthesized by hot injection of the mixture precursors, indium acetate and oleic acid, into alcohol solution (1-octadecanol and 1-octadecence mixture). Field emission transmission electron microscopy (FE-TEM), High resolution X-Ray diffraction (X-ray), Nuclear magnetic resonance (NMR), and Fourier transform infrared spectroscopy (FT-IR) were employed to investigate the size, surface molecular structure, and crystallinity of the synthesized $In_2O_3$ NCs. When covered by oleic acid as a capping group, the $In_2O_3$ NCs had a high crystallinity with a cubic structure, demonstrating a narrow size distribution. A high mobility of $2.51cm^2/V{\cdot}s$ and an on/off current ratio of about $1.0{\times}10^3$ were observed with an $In_2O_3$ NCs thin film transistor (TFT) device, where the channel layer of $In_2O_3$ NCs thin films were formed by a solution process of spin coating, cured at a relatively low temperature, $350^{\circ}C$. A size-dependent, non-monotonic trend on electron mobility was distinctly observed: the electron mobility increased from $0.43cm^2/V{\cdot}s$ for NCs with a 5.5 nm diameter to $2.51cm^2/V{\cdot}s$ for NCs with a diameter of 7.1 nm, and then decreased for NCs larger than 7.1 nm. This phenomenon is clearly explained by the combination of a smaller number of hops, a decrease in charging energy, and a decrease in electronic coupling with the increasing NC size, where the crossover diameter is estimated to be 7.1 nm. The decrease in electronic coupling proved to be the decisive factor giving rise to the decrease in the mobility associated with increasing size in the larger NCs above the crossover diameter.

• Textile Coloration and Finishing
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• v.3 no.1
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• pp.8-16
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• 1991

In order to investigate the fine structure of PET films, PET films were stretchd at various draw ratios (2, 3, 4, 5) below $T_g$ ($72^{\circ}C$) and then annealed at various temperatures (125, 150, 175, $200^{\circ}C$) under free-annealed (FA) and taut-annealed (TA) conditions. Such changes as thermal shrinkage, crystallinity, crystallite size, dynamic viscoelasticity and thermal behaviour were measured in relation to the draw ratio and annealing condition.The following results were obtained. 1. Thermal shirinkage increased with increasing annealing temperature and draw ratio, but decreased in case of draw ratio 4 (draw ratio 3 at $200^{\circ}C$) and above it. 2. The degree of crystallinity of FA samples were higher than those of TA samples. 3. Tan 5 of TA samples were less than those of FA samples, and storage moduli (E') and loss moduli (E") of FA samples were less than those of TA samples; moreover, maximum tan '||'&'||' temperature of FA samples were shifted toward higher temperature than those of TA samples. 4. The melting endotherm ($T_m$) and heat of fusion $(\DeltaH)$ of the PET film increased with the draw ratio and annealing temperature; in addition, premelting endotherm ($T_m$) and heat of fusion $(\DeltaH)$ of the local crystallization in the FA samples were larger than those of TA samples. 5. The X-ray diffraction pattern displayed sharp peaks gradually with the draw ratio and annealing temperature. 6. Crystallite sizes of FA samples were larger than those of TA samples.

• Journal of Powder Materials
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• v.25 no.1
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• pp.54-59
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• 2018

Sb-doped $SnO_2$ (ATO) transparent conducting films are fabricated using horizontal ultrasonic spray pyrolysis deposition (HUSPD) to form uniform and compact film structures with homogeneously supplied precursor solution. To optimize the molar concentration and transparent conducting performance of the ATO films using HUSPD, we use precursor solutions of 0.15, 0.20, 0.25, and 0.30 M. As the molar concentration increases, the resultant ATO films exhibit more compact surface structures because of the larger crystallite sizes and higher ATO crystallinity because of the greater thickness from the accelerated growth of ATO. Thus, the ATO films prepared at 0.25 M have the best transparent conducting performance ($12.60{\pm}0.21{\Omega}/{\square}$ sheet resistance and 80.83% optical transmittance) and the highest figure-of-merit value ($9.44{\pm}0.17{\times}10^{-3}{\Omega}^{-1}$). The improvement in transparent conducting performance is attributed to the enhanced carrier concentration by the improved ATO crystallinity and Hall mobility with the compact surface structure and preferred (211) orientation, ascribed to the accelerated growth of ATO at the optimized molar concentration. Therefore, ATO films fabricated using HUSPD are transparent conducting film candidates for optoelectronic devices.

• Journal of the Korean Society of Food Science and Nutrition
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• v.31 no.3
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• pp.475-481
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• 2002

Blend films of poly(3-hydroxybutyric acid) (PHB) with chitosan were prepared, and their Physical properties and crystallization were investigated. The degree of crystallinity of PHB/chitosan films by X-ray diffraction decreased with increasing chitosan concentration. In the fourier-transformed infrared spectra, carbonyl peak of PHB became lower with increasing the amount of chitosan. The addition of chitosan to PHB film decreased thermal stability and crystallinity of the blend films. The granular sizes of the films were reduced with the addition of chitosan to the film in the microstructural observation by a scanning electron microscope. Mechanical properties, including tensile strength and percent elongation, of the blend films increased with increasing chitosan ratio in the films. For color of the films, L and b values generally decreased with increasing chitosan ratio, but transparency of the films increased.