• Title/Summary/Keyword: film adhesive

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점착필름 절단용 다이 칼날 소재에 적용된 점착 방지 코팅의 물 접촉각 및 박리강도에 관한 연구 (A Study on Water Contact Angle and Peel Strength by Anti- Adhesion Coating on Die Blade Materials for Adhesive Film Cutting)

  • 하유진;김민욱;김욱배
    • Tribology and Lubricants
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    • 제39권5호
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    • pp.190-196
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    • 2023
  • Anti-adhesion coatings are very important in the processing of adhesive materials such as optical clear adhesive (OCA) films. Choosing the appropriate release coating material for dies and tools can be quite challenging. Hydrophobic surface treatment is usually performed, and its performance is often estimated by the static water contact angle (CA). However, the relationship between the release performance and the CA is not well understood. In this study, the water CAs of surfaces coated with anti-adhesion materials and the peel strengths of the acrylic-based adhesive films are evaluated. STC5 and SUS304 are selected as the base materials. Base materials with different surface roughnesses are produced by hairline finishing, mirror-polishing, and end milling. Four fluoropolymer compounds, including a self-assembled monolayer, are selected to make the base surface hydrophobic. Static, advancing, and receding CAs are mostly increased due to the coating, but the CA hysteresis is found to increase or decrease depending on the coating material. The peel strengths all decreased after coating and are largely dependent on the coating material, with significantly lower values observed for fluorosilane and perfluoropolyether silane coatings. The peel strength is observed to correlate better with the static CA and advancing CA than with the receding CA or hysteresis. However, it is not possible to accurately predict the anti-adhesion performance based on water CA alone, as the peel strengths are not fully proportional to the CAs.

Fabrication of Patchable Organic Lasing Sheets via Soft Lithography

  • Kim, Ju-Hyung
    • 청정기술
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    • 제22권3호
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    • pp.203-207
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    • 2016
  • Here, we report a novel fabrication technique for patchable organic lasing sheet based on non-volatile liquid organic semiconductors and freestanding polymeric film with high flexibility and patchability. For this work, we have fabricated the second-order DFB grating structure, which leads to surface emission, embedded in the freestanding polymeric film. Using an ultra-violet (UV) curable polyurethaneacrylate (PUA) mixture, the periodic DFB grating structure can be easily prepared on the freestanding polymeric film via a simple UV curing process. Due to unsaturated acrylate remained in the PUA mixture after UV curing, the freestanding PUA film provides adhesive properties, which enable mounting of the patchable organic lasing sheet onto non-flat surfaces with conformal contact. To achieve laser actions in the freestanding resonator structure, a composite material of liquid 9-(2-ethylhexyl)carbazole (EHCz) and organic laser dyes was used as the laser medium. Since the degraded active materials can be easily refreshed by a simple injection of the liquid composite, such a non-volatile liquid organic semiconducting medium has degradation-free and recyclable characteristics in addition to other strong advantages including tunable optoelectronic responses, solvent-free processing, and ultimate mechanical flexibility and uniformity. Lasing properties of the patchable organic lasing sheet were also investigated after mounting onto non-flat surfaces, showing a mechanical tunability of laser emission under variable surface curvature. It is anticipated that these results will be applied to the development of various patchable optoelectronic applications for light-emitting displays, sensors and data communications.

The Properties of HfO2 Thin Films by DC/RF Magnetron Sputtering and Thermal Evaporation Method

  • Jeong, Woon-Jo;Ahn, Ho-Geun;Kim, Young-Jun;Yang, Hyeon-Hun;Park, Gye-Choon
    • Transactions on Electrical and Electronic Materials
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    • 제8권2호
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    • pp.89-92
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    • 2007
  • $CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200\;^{\circ}C$ to $350\;^{\circ}C$ at intervals of $50\;^{\circ}C$.

The Properties of $CuInSe_2$ Thin Films by DC/RF Magnetron Sputtering and Thermal Evaporation Method

  • Jeong, Woon-Jo;Ahn, Ho-Geun;Kim, Young-Jun;Yang, Hyeon-Hun;Park, Gye-Choon
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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    • pp.86-90
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    • 2008
  • $CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200^{\circ}C$ to $350^{\circ}C$ at intervals of $50^{\circ}C$.

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중간층 조건에 따른 Cr-Mo-N 막의 상형성 및 마찰마모 거동 연구 (Tribology and Phase Evolution of Cr-Mo-N Coatings with Different Interlayer Condition)

  • 양영환;여인웅;박상진;임대순;오윤석
    • 한국표면공학회지
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    • 제44권6호
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    • pp.269-276
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    • 2011
  • Phase evolution and tribological behavior of Cr-Mo-N multi compositional films with different interlayer were investigated. The films were deposited by hybrid PVD (Physical Vapor Deposition) system consisted of dc unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) sources. A pure molybdenum (Mo) was used as sputtering target and also a pure Cr was used as AIP target to form the Cr-Mo-N films. Various growth planes were found, no textured surface, in all of the multi composition films. Maximum value of microhardness was measured in Cr-Mo-N film with Mo interlayer as 29 GPa. Composition film was mainly showed the aspect of the adhesive wear than CrN film. The friction coefficient was decreased from 0.6 for pure CrN coating to 0.35 for Cr-Mo-N film with Mo interlayer. This result may come from the formation of metal oxide tribo-layer which is known as solid lubricant during the wear test.

$CuInSe_2$ 박막의 구조적 전기적 특성 (Structural and Electrical Properties of $CuInSe_2$ Ternary Compound Thin Film)

  • 김영준;양현훈;정운조;박계춘
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1396-1397
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    • 2006
  • Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1 : 1, while the surface temperature haying an effect on the quality of the thin film was changed from $100[^{\circ}C]$ to $300[^{\circ}C]$ at intervals of $50[^{\circ}C]$.

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박막태양전지 하부전극용 Mo 박막특성 연구 (A Study on properties of Lower Electrode thin films solar cell for Mo thin film)

  • 양현훈;김영준;정운조;박계춘
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.321-322
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    • 2007
  • In order to increase the cost effectiveness of solar cells, module production should be treated more comprehensively. Back contact cells offer distinct advantage in the interconnection of cells to modules. Thereby Mo thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the Mo were vapor-deposited in the named order. Among them, Mo were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC power was controlled so that the composition of Mo, while the surface temperature having an effect on the quality of the thin film was changed from R.T$[^{\circ}C]$ to $200[^{\circ}C]$ at intervals of $50[^{\circ}C]$. Micro-structural studies were carried out by XRD (D/MAX-1200, Rigaku Co.) and SEM (JSM-5400, Jeol Co.). Electrical properties were measured by CMT-SR3000 Measurement System.

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기판온도와 열처리 온도에 따른 $CuInSe_2$ 박막의 특성분석 (A Study on properties of $CuInSe_2$ thin films by substrate temperature and annealing temperature)

  • 김영준;양현훈;정운조;박계춘
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.354-355
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    • 2007
  • Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from 100[$^{\circ}C$] to 300[$^{\circ}C$] at intervals of 50[$^{\circ}C$].

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Cu 금속과 Si 기판 사이에서 확산방지막으로 사용하기 위한 Zr(Si)N 박막의 특성 (Characteristic of Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate)

  • 김좌연;조병철;채상훈;김헌창;박경순
    • 한국결정성장학회지
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    • 제12권6호
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    • pp.283-287
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    • 2002
  • 초고집적 반도체 회로에서 Cu를 배선으로 쓰이기 위한 Cu 금속과 Si 기판사이의 확산방지막으로써 Zr(Si)N 박막을 연구하였다. Zr(Si)N 박막증착은 DC magnetron sputter으로 $Ar/N_2$의 혼합 gas를 사용한 reactive sputtering 방법을 이용하였다. 상온에서 ZrN 박막 증착시 Ar gas와 NE gas 비율이 48 : 2일 때 가장 낮은 비저항값을 가졌으며, 증착시 기판의 온도의 증가에 따라서 비저항값이 낮아졌다. 비저항값이 감소된 ZrN 박막일수록 (002)면의 방향성을 갖는 결정이 성장되었다. ZrN 박막의 Cu 확산방지 특성은 ZrN 박막에 Si을 첨가함으로써 개선될 수 있으며 지나치게 첨가될 경우에는 오히려 확산방지 특성이 감소되었다. 접착력 특성에서는 ZrN에 Si의 함유량이 증가함에 파라 개선되었다. 증착막의 특성은 XRD, 광학 현미경, scretch tester 그리고 $\alpha$-step 등을 사용하여 분석하였다.

액체누설 감지용 테이프형 필름센서 (Tape-Type Liquid Leakage Film Sensor)

  • 유동근;김경신;유홍근;한국희;김동준;김정현;한상호;조광섭
    • 한국진공학회지
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    • 제20권2호
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    • pp.146-154
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    • 2011
  • 접착테이프 형태의 액체누설 감지 필름 센서와 이를 이용하고 경보 장치를 포함한 감지 시스템을 개발하였다. 액체누설 감지 필름형 테이프 센서는 베이스 필름층, 전도성 라인층, 보호 필름층으로 구성되며, 테이프의 두께 $300{\sim}500{\mu}m$, 폭 3.55 cm, 그리고 단위 테이프의 길이는 200 m이다. 전도성 라인층의 필름에는 3개의 전도선과 1개의 저항선이 있다. 이들은 도전성 은나노 잉크를 전자인쇄방식으로 설치한다. 이들 저항선과 전도선 사이에 액체가 누설되어 전기적으로 상호 통전되면, 두 선사이의 저항변화를 전압의 변화로 계측하여 누설 위치를 감지한다. 물을 포함한 전도성 액체에 대한 누설 위치 감지에서 길이 200 m에서 오차 범위는 ${\pm}1m$ 이내이다.