• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.1023-1033
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• 2014

In this paper, performance improved hole-filling algorithm which includes the boundary noise removing pre-process that can be used for an arbitrary virtual view synthesis has been proposed. Boundary noise occurs due to the boundary mismatch between depth and texture images during the 3D warping process and it usually causes unusual defects in a generated virtual view. Common-hole is impossible to recover by using only a given original view as a reference and most of the conventional algorithms generate unnatural views that include constrained parts of the texture. To remove the boundary noise, we first find occlusion regions and expand these regions to the common-hole region in the synthesized view. Then, we fill the common-hole using the spiral weighted average algorithm and the gradient searching algorithm. The spiral weighted average algorithm keeps the boundary of each object well by using depth information and the gradient searching algorithm preserves the details. We tried to combine strong points of both the spiral weighted average algorithm and the gradient searching algorithm. We also tried to reduce the flickering defect that exists around the filled common-hole region by using a probability mask. The experimental results show that the proposed algorithm performs much better than the conventional algorithms.

• Korean Journal of Materials Research
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• v.23 no.10
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• pp.550-554
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• 2013

As continued scaling becomes increasingly difficult, 3D integration has emerged as a viable solution to achieve higher bandwidths and good power efficiency. 3D integration can be defined as a technology involving the stacking of multiple processed wafers containing integrated circuits on top of each other with vertical interconnects between the wafers. This type of 3D structure can improve performance levels, enable the integration of devices with incompatible process flows, and reduce form factors. Through silicon vias (TSVs), which directly connect stacked structures die-to-die, are an enabling technology for future 3D integrated systems. TSVs filled with copper using an electro-plating method are investigated in this study. DC and pulses are used as a current source for the electro-plating process as a means of via filling. A TiN barrier and Ru seed layers are deposited by plasma-enhanced atomic layer deposition (PEALD) with thicknesses of 10 and 30 nm, respectively. All samples electroplated by the DC current showed defects, even with additives. However, the samples electroplated by the pulse current showed defect-free super-filled via structures. The optimized condition for defect-free bottom-up super-filling was established by adjusting the additive concentrations in the basic plating solution of copper sulfate. The optimized concentrations of JGB and SPS were found to be 10 and 20 ppm, respectively.

• Journal of Korean Neurosurgical Society
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• v.43 no.1
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• pp.48-50
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• 2008

We experienced a case of giant arachnoid granulation misdiagnosed as dural sinus thrombosis. A 66-year-old woman presented with a one month history of progressive occipital headache. Computed tomography angiography and cerebral angiography showed a round filling defect at the transverse sinus which was speculated as a transverse sinus thrombosis. Anticoagulation therapy was performed to prevent worsening of thrombosis for 2 weeks and then a Gadolinium-enhanced magnetic resonance imaging scan was performed. The filling defect lesion at the transverse sinus revealed a non-enhancing granule with central linear enhancement, which was compatible with giant arachnoid granulation. We checked the intrasinus pressure difference across the lesion the through the dural sinus in order to exclude the lesion as the cause of headache. Normal venous pressure with no significant differential pressure across the lesion was noted. Headache was treated with medical therapy.

• Design & Manufacturing
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• v.6 no.2
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• pp.79-83
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• 2012

Inner part is used as an insulator in wire fuses. After injection molding, inner part has been showed flashes, filling defects and deformation. After production, operators have to cut off flashes, one by one. this process leads to continuous low productivity and loss of source materials. This study focuses on identifying the causes for flashes, filling defects, clamping force of injectors, mold adhesion, resin of liquidity and others, and on resolving those issues.

• Korean Journal of Radiology
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• v.22 no.3
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• pp.395-404
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• 2021

Objective: To compare the utility of computed tomography perfusion (CTP) and three different 4-point scoring systems in computed tomography angiography (CTA) in confirming brain death (BD) in patients with and without skull defects. Materials and Methods: Ninety-two patients clinically diagnosed as BD using CTA and/or CTP for confirmation were retrospectively reviewed. For the final analysis, 86 patients were included in this study. Images were re-evaluated by three radiologists according to the 4-point scoring systems that consider the vessel opacification on 1) the venous phase for both M4 segments of the middle cerebral arteries (MCAs-M4) and internal cerebral veins (ICVs) (A60-V60), 2) the arterial phase for the MCA-M4 and venous phase for the ICVs (A20-V60), 3) the venous phase for the ICVs and superior petrosal veins (ICV-SPV). The CTP images were independently reviewed. The presence of an open skull defect and stasis filling was noted. Results: Sensitivities of the ICV-SPV, A20-V60, A60-V60 scoring systems, and CTP in the diagnosis of BD were 89.5%, 82.6%, 67.4%, and 93.3%, respectively. The sensitivity of A20-V60 scoring was higher than that of A60-V60 in BD patients (p < 0.001). CTP was found to be the most sensitive method (86.5%) in patients with open skull defect (p = 0.019). Interobserver agreement was excellent in the diagnosis of BD, in assessing A20-V60, A60-V60, ICV-SPV, CTP, and good in stasis filling (κ: 0.84, 0.83, 0.83, 0.83, and 0.67, respectively). Conclusion: The sensitivity of CTA confirming brain death differs between various proposed 4-point scoring systems. Although the ICV-SPV is the most sensitive, evaluation of the SPV is challenging. Adding CTP to the routine BD CTA protocol, especially in cases with open skull defect, could increase sensitivity as a useful adjunct.

• Journal of the Korean Society for Precision Engineering
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• v.13 no.3
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• pp.110-122
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• 1996

Finite element analysis tool was developed to analyze the casting process. Generally, casting process consists of mold filling and solidification. Both filling and solidication process were simulated simultaneously to investigate the effects of process variables and to predict the defect. At filling process, thermal coupling was especially considered to investigate thermal history of material during the filling stage. And thermal condition at the final stage of filling is used as the initial conditions in a solidification process for the exact simullation of the actual casting processes. At mold filling process, Lagragian-type finite element method with automatic remeshing scheme was used to find the material flow. A perturbation method with artificial viscosity is adopted to avoid numerical instability in low viscous fluid. At solidification process, enthalpy-based finite element method was used to solove the heat transfer problem with phase change. And elastic stress analysis has been performed to predict the thermal residual stress. Through the FE analysis, solidification time, position of solidus line, liquidus line and thermal residual stress are found. Through the study, the importance of combined analysis has been emphasized. Finite element tools developed in this study will be used process design of casting process and may be basic structure for total CAE system of castings which will be constructed afterward.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.128-128
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• 2016

Cu 배선폭 미세화 기술은 반도체 디바이스의 성능 향상을 위한 핵심 기술이다. 현재 배선 기술은 lithography, deposition, planarization등 종합적인 공정 기술의 발전에 따라 10x nm scale까지 감소하였다. 하지만 지속적인 feature size 감소를 위하여 요구되는 높은 공정 기술 및 비용과 배선폭 미세화로 인한 재료의 물리적 한계로 인하여 배선폭 미세화를 통한 성능의 향상에는 한계가 있다. 배선폭 미세화를 통한 2차원적인 집적도 향상과는 별개로 chip들의 3차원 적층을 통하여 반도체 디바이스의 성능 향상이 가능하다. 칩들의 3차원 적층을 위해서는 별도의 3차원 배선 기술이 요구되는데, TSV(through-Si-via)방식은 Si기판을 관통하는 via를 통하여 chip간의 전기신호 교환이 최단거리에서 이루어지는 가장 진보된 형태의 3차원 배선 기술이다. Si 기판에 $50{\mu}m$이상 깊이의 via 및 seed layer를 형성 한 후 습식전해증착법을 이용하여 Cu 배선이 이루어지는데, via 내부 Cu ion 공급 한계로 인하여 일반적인 공정으로는 void와 같은 defect가 형성되어 배선 신뢰성에 문제를 발생시킨다. 이를 해결하기 위해 각종 유기 첨가제가 사용되는데, suppressor를 사용하여 Si 기판 상층부와 via 측면벽의 Cu 증착을 억제하고, accelerator를 사용하여 via 바닥면의 Cu 성장속도를 증가시켜 bottom-up TSV filling을 유도하는 방식이 일반적이다. 이론적으로, Bottom-up TSV filling은 sample 전체에서 Cu 성장을 억제하는 suppressor가 via bottom의 강한 potential로 인하여 국부적 탈착되고 via bottom에서만 Cu가 증착되어 되어 이루어지므로, accelerator가 없이도 void-free TSV filling이 가능하다. Accelerator가 Suppressor를 치환하여 오히려 bottom-up TSV filling을 방해한다는 보고도 있었다. 본 연구에서는 유기 첨가제의 치환으로 인한 TSV filling performance 저하를 방지하고, 유기 첨가제 조성을 단순화하여 용액 관리가 용이하도록 하기 위하여 suppressor만을 이용한 TSV filling 연구를 진행하였다. 먼저, suppressor의 흡착, 탈착 특성을 이해하기 위한 연구가 진행되었고, 이를 바탕으로 suppressor만을 이용한 bottom-up Cu TSV filling이 진행되었다. 최종적으로 $60{\mu}m$ 깊이의 TSV를 1000초 내에 void-free filling하였다.

• Journal of the korean academy of Pediatric Dentistry
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• v.23 no.4
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• pp.818-839
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• 1996

The strain gage, holographic and photoelastic analysis etc. have been used for stress analysis of prosthesis, orthodontic or orthopedic appliances and filling materials. But these methods has some limitation in analyzing the internal stress. The Finite Element Analysis has been proved to compensate this defect and widely used in this area. The purpose of this study was to compare the stress distributions of the various temporary filling methods being used in pulpotomy procedure. Three different models were designed according to temporary filling material and method: amalgam filling with ZOE base(Model I), amalgam filling with ZPC sub-base and ZOE(Model II), IRM filling only(Model III). The results of the experiment were as follows: 1. In model I under the load case 6 and 1, the significant stress was shown to be concentrated on the buccal portion of crown. 2. Model II showed the similar pattern of stress distribution to Model I. 3. In model III under load case 2, the stress was mainly distributed on the buccal cusp tip and buccal margin of filling material. In same model under the load case 3, the stress was distributed on the lingual cusp tip. 4. Based on the above data, IRM can be assumed to have advantage over the other tested materials in reducing the incidence of crown fracture by localized the stress within the filling materials.

• Journal of Korea Foundry Society
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• v.20 no.6
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• pp.368-376
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• 2000

Rheology forming technology has been accepted as a new method for fabricating near net shaped products with lightweight aluminum alloys. The rheology forming process consists of reheating process of billet, billet handling, filling into the die cavity and solidification of rheology formed part. The rheology forming experiments are performed with two different die temperatures ($T_d$ = $200^{\circ}C$, $300^{\circ}C$) and orifice gate type. The filling behavior and various defects of Al-Si materials with wear resistance (A357, A390 and ALTHIX 86S) fabricated in rheology forming process are evaluated in terms of alloying elements and surface non-uniformity. Finally, the methods to obtain the rheology formed products with high quality are described by solutions for avoiding the surface and internal defects.