• Polymer(Korea)
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• v.35 no.5
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• pp.483-487
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• 2011

For the preparation of effective non-vascular drug eluting stent (DES), pullulan acetate (PA) was investigated as a coating material for polytetrafluorethylene (PTFE)-covered stent. PA was coated on PTFE-covered stent (PTFE-stent) by dip coating technique, and then its surface morphology, drug release behavior and cellular toxicity were tested. Field emission-scanning electron microscopy (FE-SEM) result indicated that its surface was smoother after PA coating without any cracking. The sustained release behavior of paclitaxel from PA-coated PTFE membrane was observed for 80 days. Also, the biological stability of paclitaxel in the membrane was confirmed by annexin V binding assays. Furthermore, the antitumor activity was demonstrated by an in vivo test against CT-26 murine colorectal tumors. From the results, we concluded that PA was expected as a useful coating material to design an effective non-vascular DES.

• Bulletin of the Korean Chemical Society
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• v.29 no.4
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• pp.817-821
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• 2008

We have investigated the influence of the crystal structure on the chemical bonding nature and photocatalytic activity of cubic and hexagonal perovskite A[$Cr_{1/2}Ta_{1/2}$]O3 (A = Sr, Ba) compounds. According to neutron diffraction and field emission-scanning electron microscopy, the crystal structure and particle size of these compounds are strongly dependent on the nature of A-site cations. Also, it was found that the face-shared octahedra in the hexagonal phase are exclusively occupied by chromium ions, suggesting the presence of metallic (Cr-Cr) bonds. X-ray absorption and diffuse UV-vis spectroscopic analyses clearly demonstrated that, in comparison with cubic Sr[$Cr_{1/2}Ta_{1/2}$]$O_3$ phase, hexagonal Ba[$Cr_{1/2}Ta_{1/2}$]$O_3$ phase shows a decrease of Cr oxidation state as well as remarkable changes in interband Cr d-d transitions, which can be interpreted as a result of metallic (Cr-Cr) interactions. According to the test of photocatalytic activity, the present semiconducting materials have a distinct activity against the photodegradation of 4-chlorophenol. Also the Srbased compound was found to show a higher photocatalytic activity than the Ba-based one, which is attributable to its smaller particle size and its stronger absorption in visible light region.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.111.1-111.1
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• 2012

Interest in flexible transparent conducting films (TCFs) has been growing recently mainly due to the demand for electrodes incorporated in flexible or wearable displays in the future. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance on PET substrates is researched Arc-discharge SWNTs were dispersed in deionized water by adding sodium dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then was doped with Au-ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. This was confirmed and discussed on the XPS and UPS studies. We show that 87 ${\Omega}/{\Box}$ sheet resistances with 81% transmittance at the wavelength of 550nm. The changes in electrical and optical conductivity of SWNT film before and after Au-ionic doping treatments were discussed. The effect of Au-ion treatment on the electronic structure change of SWNT films was investigated by Raman and XPS.

• Korean Journal of Materials Research
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• v.25 no.6
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• pp.274-278
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• 2015

The possibility of using the chemical precipitation method of up-cycled ammonium paratungstate (APT) was studied and compared with the thermal decomposition method. $WO_3$ particles were synthesized by chemical precipitation method using a 1:2 weight ratio of APT: Di-water. For thermal decomposition, APT powder was heated for 4h at $600^{\circ}C$ in air atmosphere. The reaction products were characterized by X-ray diffraction (XRD), X-ray fluorescence spectrometer (XRF), particle size analyzer (PSA), and field emission-scanning electron microscopy (FE-SEM). Thermogravimetric analysis (TGA) of the up-cycled APT allowed for the identification of the sequence of decomposition and reduction reactions that occurred during the heat treatment. TGA data indicated a total weight loss of 10.78% with the reactions completed in $658^{\circ}C$. The XRD results showed that APT completely decomposed to $WO_3$ by thermal decomposition and chemical precipitation. The particle size of the synthesized $WO_3$ powders by thermal decomposition with 2 h of planetary milling was around $2{\mu}m$ During the chemical precipitation process, the particle size of the synthesized $WO_3$ powders showed a round-shape with ${\sim}0.6{\mu}m$ size.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.323-323
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• 2013

High power light-emitting diodes (LEDs) are widely used in many device applications due to its ability to operate at high power and produce high luminance. However, releasing the heat accumulated in the device during operating time is a serious problem that needs to be resolved to ensure high optical efficiency. Ceramic or Aluminium base metal printed circuit boards are generally used as integral parts of communication and power devices due to its outstanding thermal dissipation capabilities as heat sink or heat spreader. We investigated the characterisation of electroless plating of Ni-B film according to plating bath temperature, ranging from $50^{\circ}C$ to $75^{\circ}C$ on Ag paste/anodised Al ($Al_2O_3$)/Al substrate to be used in metal PCB for high power LED packing systems. X-ray diffraction (XRD), Field-Emission Scanning Electron Microscopy (FE-SEM) and X-ray Photoelectron Spectroscopy (XPS) were used in the film analysis. By XRD result, the structure of the as deposited Ni-B film was amorphous irrespective of bath temperature. The activation energy of electroless Ni-B plating was 59.78 kJ/mol at the temperature region of $50{\sim}75^{\circ}C$. In addition, the Ni-B film grew selectively on the patterned Ag paste surface.

• Journal of Surface Science and Engineering
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• v.43 no.1
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• pp.17-24
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• 2010

In this study, surface characteristics of dental implant fixture with various manufacturing process have been researched using electrochemical methods. The dental implant fixture was selected with 5 steps by cleaning, surface treatment and sterilization with same size and screw structure; the 1st step-machined surface, 2nd step-cleaned by thinner and prosol solution, 3th step-surface treated by RBM (resorbable blasting media) method, 4th step-cleaned and dried, 5th step-sterilized by gamma-ray. The electrochemical behavior of dental implant fixture has been evaluated by using potentiostat (EG&G Co, 2273A) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The corrosion surface was observed using field-emission scanning electron microscopy (FE-SEM) and energy dispersive x-ray spectroscopy (EDS). The step 5 sample showed the cleaner and rougher surface than step 3 sample. The step 5 sample of implant fixture treated by RBM and gamma sterilization showed the low corrosion current density compared to others. Especially, the step 3 sample of implant fixture treated by RBM was presented the lowest value of corrosion resistance and the highest value of corrosion current density. The step 3 sample showed the low value of polarization resistance compared to other samples. In conclusion, the implant fixture treated with RBM and gamma sterilization has the higher corrosion resistance, and corrosion resistance depends on the step of manufacturing process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.95-100
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• 2016

In this work, tin oxides were obtained by the liquid reduction precipitation method and hydrothermal process using $SnCl_2{\cdot}2H_2O$, $N_2H_4$, and NaOH. Tin oxide crystals having different sizes and morphologies could be achieved. The powders were characterized by X-ray diffraction (XRD) and Field Emission Scanning Electron Microscopy (FE-SEM). Depending on the molar ratio of the raw materials, tin oxide crystalline with the spherical and rectangular plate-like shape could be obtained, the crystal phase was SnO and $Sn_6O_4(OH)_4$. And the obtained SnO crystals by a hydrothermal reaction showed various shapes, such as, spherical, plate-like and flower-like architectures depending on the temperature conditions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.33-40
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• 2014

Poly vinylidene fluoride-co-hexafluoropropylene (PVdF-HFP) membrane were prepared by the electrospinning technique. We had applied a DLC coating process and then the surface of the membrane and the contact angle change was investigated. Electrospun fibrous PVdF-HFP membrane surface became to wrinkled shape by Ar plasma treatment and treatment conditions. The wrinkled surface of PVdF-HFP membrane became super-hydrophilic. However, after DLC coating process, it became super-hydrophobic. The resulting surfaces were characterized by water contact angle measurement, X-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscopy (FE-SEM). Resultantly it was recognized that the wettability characteristics of the membrane surfaces depended on the chemical composition and surface morphology.