• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.619-619
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• 2009

Recently, silica nanostructures are widely used in various applicationary areas such as chemical sensors, biosensors, nano-fillers, markers, catalysts, and as a substrate for quantum dots etc, because of their excellent physical, chemical and optical properties. Additionally, these days, semiconductor silica and silicon with high purity is a key challenge because of their metallurgical grade silicon (MG-Si) exhibit purity of about 99% produced by an arc discharge method with high cast. Tremendous efforts are being paid towards this direction to reduce the cast of high purity silicon for generation of photovoltaic power as a solar cell. In this direction, which contains a small amount of impurities, which can be further purified by acid leaching process. In this regard, initially the low cast rice-husk was cultivated from local rice field and washed well with high purity distilled water and were treated with acid leaching process (1:10 HCl and $H_2O$) to remove the atmospheric dirt and impurity. The acid treated rice-husk was again washed with distilled water and dried in an oven at $60^{\circ}C$. The dried rice-husk was further annealed at different temperatures (620 and $900^{\circ}C$) for the formation of silica nanospheres. The confirmation of silica was observed by the X-ray diffraction pattern and X-ray photoelectron spectroscopy. The morphology of obtained nanostructures were analyzed via Field-emission scanning electron microscope(FE-SEM) and Transmission electron microscopy(TEM) and it reveals that the size of each nanosphares is about 50-60nm. Using the Inductively coupled plasma mass spectrometry(ICP-MS), Silica was analyzed for the amount of impurities.

• Korean Journal of Materials Research
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• v.22 no.3
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• pp.145-149
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• 2012

Red phosphors of $Gd_{1-x}Al_3(BO_3)_4:{Eu_x}^{3+}$ were synthesized by using the solid-state reaction method. The phase structure and morphology of the phosphors were measured using X-ray diffraction (XRD) and field emission-scanning electron microscopy (FE-SEM), respectively. The optical properties of $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors with concentrations of $Eu^{3+}$ ions of 0, 0.05, 0.10, 0.15, and 0.20 mol were investigated at room temperature. The crystals were hexagonal with a rhombohedral lattice. The excitation spectra of all the phosphors, irrespective of the $Eu^{3+}$ concentrations, were composed of a broad band centered at 265 nm and a narrow band having peak at 274 nm. As for the emission spectra, the peak wavelength was 613 nm under a 274 nm ultraviolet excitation. The intensity ratio of the red emission transition ($^5D_0{\rightarrow}^7F_2$) to orange ($^5D_0{\rightarrow}^7F_1$) shows that the $Eu^{3+}$ ions occupy sites of no inversion symmetry in the host. In conclusion, the optimum doping concentration of $Eu^{3+}$ ions for preparing $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors was found to be 0.15 mol.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.337-337
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• 2013

ZnO seed layers were deposited on a quartz substrate using the sol-gel method, and B-doped ZnO (BZO) nanorods with different B concentrations ranging from 0 to 2.5 at.% were grown on the ZnO seed layers by the hydrothermal method. The structural, optical, electrical propertiesof the ZnO and BZO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), ultraviolet-visible spectroscopy, and hall effect. The ZnO and BZO nanorods grew well aligned on the surface of the quartz substrates. From the XRD data, it can be seen that the B doping is responsible for the distortion of the ZnO lattice. The PL spectra show near-band-edge emission and deep-level emission, and they also show that B doping significantly affects the PL properties of ZnO nanorods. The optical band gaps are changed by B doping, and thus the Urbach energy value changed with the optical band gap of the ZnO nanorods. From the hall measurements, it can be observed that the values of electrical resistivity, carrier concentration, and mobility are changed by B doping.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1205-1211
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• 2013

The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities ($I_{NBE}/I_{DLE}$) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.447-453
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• 2011

The monodisperse spherical $SiO_2$ particles were overcoated with $Y_2O_3:Eu^{3+}$ phosphor layers via a Pechini sol-gel process and the resulting $SiO_2@Y_2O_3:Eu^{3+}$ core-shell phosphors were subsequently annealed at $800^{\circ}C$ at an ambient atmosphere. The crystallographic structure, morphology, and luminescent property of core-shell structured $SiO_2@Y_2O_3:Eu^{3+}$ phosphors were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and photoluminescence (PL). The spherical, nonagglomerated $SiO_2$ particles prepared by a Stober method exhibited a relatively narrow size distribution in the range of 260-300 nm. The thickness of phosphor shell layer in the core-shell particles can be facilely controlled by varying the coating number of $Y_2O_3:Eu^{3+}$ phosphors. The core-shell structured $SiO_2@Y_2O_3:Eu^{3+}$ phosphors showed a strong red emission, which was dominated by the $^5D_0-^7F_2$ transition (610 nm) of $Eu^{3+}$ ion under the ultraviolet excitation (263 nm). The PL emission properties of $SiO_2@Y_2O_3:Eu^{3+}$ phosphors were also compared with pure $Y_2O_3:Eu^{3+}$ nanophosphors.

• Journal of Surface Science and Engineering
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• v.54 no.2
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• pp.96-101
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• 2021

NaNbO₃:Eu³⁺ phosphor thin films were grown on quartz substrates by radio-frequency magnetron sputtering at a growth temperature of 100 ℃, with subsequent annealing at temperatures of 800, 900, and 1000 ℃. The effects of annealing temperature on the structural, morphological, and optical properties of the thin films were investigated. The NaNbO₃:Eu³⁺ sputtering target was synthesized by a solid-state reaction of raw materials Na₂CO₃, Nb₂O₅, and Eu₂O₃. The X-ray diffraction patterns exhibited that the thin films had two mixed phases of NaNbO₃ and Eu₂O₃. Surface morphologies were investigated by using field emission-scanning electron microscopy and indicated that the grains of the thin film annealed at 1000 ℃ showed irregular shapes with an average size of approximately 300 nm. The excitation spectra of Eu³⁺-doped NaNbO₃ thin film consisted of a strong charge transfer band centered at 304 nm in the range of 240-350 nm and two weak peaks at 395 and 462 nm, respectively, resulting from the ⁷F₀→⁵L₆ and ⁷F₀→⁵H₂ transitions of Eu³⁺ ions. The emission spectra under excitation at 304 nm exhibited an intense red band centered at 614 nm and two weak bands at 592 and 681 nm. As the annealing temperature increased from 800 ℃ to 1000 ℃, the intensities of all the emission bands and the band gap energies gradually increased. These results indicate that the higher annealing temperature enhance the luminescent properties of NaNbO₃:Eu³⁺ thin films.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.10
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• pp.30-39
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• 2020

Single-phase barium ferrite powder was synthesized using the sol-gel method. At this time, an attempt was made to find the optimal experimental conditions for the production of single-phase barium ferrite by varying the Fe to Ba molar ratio (Fe/Ba) and the heat treatment temperature. In addition, cobalt-substituted barium ferrite particles were prepared using cobalt, which has an excellent effect on coercivity control for the production of ferrite fine particles having a coercivity of 2.5 to 5.5 kOe for use in high-density magnetic recording media. The changes in the magnetic properties of these were investigated. X-ray diffraction (XRD), thermogravimetric-differential thermal analysis (TG-DTA), and field emission scanning electron microscopy (FE-SEM) were used to observe the synthesis of single-phase, and Fourier transform infrared spectroscopy (FT-IR) and energy dispersive X-ray spectrometry (EDS) were used to analyze the chemical structure and composition. The coercivity of the cobalt-substituted barium ferrite powder was measured by vibrating sample magnetometry (VSM). As a result, single-phase Barium ferrites were synthesized when the Fe/Ba molar ratio was 10, and the heat treatment temperature was 900 ℃. The coercivity decreased with increasing the amount of Co added. Barium ferrite, having a coercivity of 2.5 to 5.5 kOe for use in high-density magnetic recording media, was synthesized when the Co to Fe(Co/Fe) molar ratio was less than 0.16.

• Analytical Science and Technology
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• v.29 no.6
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• pp.283-292
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• 2016

Conventional fingerprint powders used during crime scene investigations pose potential health hazards. Thus, multiple natural replacement powders, including squid ink powder, indigo and rice powder were used to develop (visualize) latent fingerprints on non-porous surfaces (e.g., glass, plastic and tile). Fingerprints developed using the natural powders were compared using the Automatic Fingerprint Identification System (AFIS) with those developed with traditional black powder. The peak areas of ridges were also compared using densitometric image analyses. Collectively, objective and quantitative evaluation methods were developed. The effectiveness of natural powders varied depending on the surface but, in general, squid ink powder performed well on most surfaces. Indigo powder performed well on tile surfaces, while rice powder performed well on glass surfaces. Plastic was the most difficult surface from which to develop fingerprints. Image analysis using Field Emission Scanning Electron Microscopy (SEM) demonstrated the importance of the size and shape of natural powder particles to properly adhere to the ridges. Although densitometric image analyses did not correlate the number of minutiae and ridge peak areas, an unbiased, objective evaluation method would be possible using image analyses with a reference image. Additional experimentation will yield safe and cost-effective natural powders with which adequate fingerprint development can be performed.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.51-57
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• 2008

we have demonstrated structural evolution and optical properties of Si-nanowires (NWs) synthesized on Si (111) substrates with nanoscale Au-Si islands by rapid thermal chemical vapor deposition (RTCVD). The Au-Si nano-islands (10-50nm in diameter) were employed as a liquid-droplet catalysis to grow Si-NWs via vapor-liquid-solid mechanism. The Si-NWs were grown by a mixture gas of SiH4 and H2 at a pressure of 1.0 Torr and temperatures of $500{\sim}600^{\circ}C$. Scanning electron microscopy measurements showed that the Si-NWs are uniformly sized and vertically well-aligned along <111> direction on Si (111) surfaces. The resulting NWs are ${\sim}60nm$ in average diameter and ${\sim}5um$ in average length. High resolution transmission microscopy measurements indicated that the NWs are single crystals covered with amorphous SiOx layers of ${\sim}3nm$ thickness. In addition, the optical properties of the NWs were investigated by micro-Raman spectroscopy. The downshift and asymmetric broadening of the Si main optical phonon peak were observed in Raman spectra of Si-NWs, which indicates a minute stress effects on Raman spectra due to a slight lattice distortion led by lattice expansion of Si-NW structures.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.293-299
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• 2010

Vertically aligned ZnO nanorods on Si (111) substrate were prepared by hydrothermal method. The ZnO nanorods on spin-coated seed layer were synthesized at $140^{\circ}C$ for 6 hours in autoclave and were thermally annealed in argon atmosphere for 20 minutes at temperature of 300, 500, $700^{\circ}C$. The effects of the thermal annealing on the structural and optical properties of the grown on ZnO nanorods were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL). All the ZnO nanorods show a strong ZnO (002) and weak (004) diffraction peak, indicating c-axis preferred orientation. The residual stress of the ZnO nanorods is changed from compressive to tensile by increasing annealing temperature. The hexagonal shaped ZnO nanorods are observed. The PL spectra of the ZnO nanorods show a sharp near-band-edge emission (NBE) at 3.2 eV, which is generated by the free-exciton recombination and a broad deep-level emission (DLE) at about 2.12~1.96 eV, which is caused by the defects in the ZnO nanorods. The intensity of the NBE peak is decreased and the DLE peak is red-shifted due to oxygen-related defects by thermal annealing.