• Title/Summary/Keyword: field emitter

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Improvement of Electron Emission Characteristics and Emission Stability from Metal-coated Carbon Nanotubes (금속 코팅된 탄소나노튜브의 전계 방출 특성 및 신뢰성 향상)

  • Uh, H.S.;Park, S.;Kim, B.
    • Journal of the Korean Vacuum Society
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    • v.20 no.6
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    • pp.436-441
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    • 2011
  • Metal coating with several nanometer thickness was applied on the carbon nanotubes (CNTs) in order to improve electron emission characteristics and emission reliability for the potential applications in the area of various electron sources and displays. CNTs were grown on the 2-nm thick Invar (52% Fe, 42% Ni, 6% Co alloy)-catalized Si substrate by using plasma-enhanced chemical vapor deposition at $450^{\circ}C$. In order to reduce the spatial density of densely packed CNTs, as-grown CNTs were partly etched back by $N_2$ plasma and subsequently coated with 5~150 nm thick Ti by a sputtering method. 5 nm thick Ti-coated CNTs produced four times higher emission current density at the electric field of 6 V/${\mu}m$ and much lower emission current fluctuation, compared with the as-grown CNTs. These improved emission properties are mainly due to not only the work function of Ti (4.3 eV) lower than that of pristine CNTs (5 eV), but also lower contact resistance and better adhesion between CNT emitters and substrate accomplished by Ti coating.

Carbon nanotube field emission display

  • Chil, Won-Bong;Kim, Jong-Min
    • Electrical & Electronic Materials
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    • v.12 no.7
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    • pp.7-11
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    • 1999
  • Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).

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The Reliability Evaluation about the Triode-Type CNT Emission Source (삼극형 CNT 전자원에 대한 신뢰성 평가)

  • Kang, J.T.;Kim, D.J.;Jeong, J.W.;Kim, D.I.;Kim, J.S.;Lee, H.R.;Song, Y.H.
    • Journal of the Korean Vacuum Society
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    • v.18 no.2
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    • pp.79-84
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    • 2009
  • The electron emission source of triode type has been fabricated using CNT paste. The nano Ag particle and photosensitive polymers were added to the CNT paste. The surface roughness of the CNT emitter was uniform by the back exposure method. The added nano Ag particle improves the adhesion and the electric conductance with small variation in the CNTs and between electrode. After the aging with heat-exhausting, the reliability of the triode CNT electron source was secured in the high voltage and current operation for 12 hours. At this time, the gate leakage current was about 10 % less than.

A effect of the back contact silicon solar cell with surface texturing size and density (표면 텍스쳐링 크기와 밀도가 후면 전극 실리콘 태양전지에 미치는 영향)

  • Jang, Wanggeun;Jang, Yunseok;Pak, Jungho
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.112.1-112.1
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    • 2011
  • The back contact solar cell (BCSC) has several advantages compared to the conventional solar cell since it can reduce grid shadowing loss and contact resistance between the electrode and the silicon substrate. This paper presents the effect of the surface texturing of the silicon BCSC by varying the texturing depth or the texturing gap in the commercially available simulation software, ATHENA and ATLAS of the company SILVACO. The texturing depth was varied from $5{\mu}m$ to $150{\mu}m$ and the texturing gap was varied from $1{\mu}m$ to $100{\mu}m$ in the simulation. The resulting efficiency of the silicon BCSC was evaluated depending on the texturing condition. The quantum efficiency and the I-V curve of the designed silicon BCSC was also obtained for the analysis since they are closely related with the solar cell efficiency. Other parameters of the simulated silicon BCSC are as follows. The substrate was an n-type silicon, which was doped with phosphorous at $6{\times}10^{15}cm^{-3}$, and its thickness was $180{\mu}m$, a typical thickness of commercial solar cell substrate thickness. The back surface field (BSF) was $1{\times}10^{20}\;cm^{-3}$ and the doping concentration of a boron doped emitter was $8.5{\times}10^{19}\;cm^{-3}$. The pitch of the silicon BCSC was $1250{\mu}m$ and the anti-reflection coating (ARC) SiN thickness was $0.079{\mu}m$. It was assumed that the texturing was anisotropic etching of crystalline silicon, resulting in texturing angle of 54.7 degrees. The best efficiency was 25.6264% when texturing depth was $50{\mu}m$ with zero texturing gap in case of low texturing depth (< $100{\mu}m$).

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Characteristics of Atmosphere-rice Paddy Exchange of Gaseous and Particulate Reactive Nitrogen in Terms of Nitrogen Input to a Single-cropping Rice Paddy Area in Central Japan

  • Hayashi, Kentaro;Ono, Keisuke;Matsuda, Kazuhide;Tokida, Takeshi;Hasegawa, Toshihiro
    • Asian Journal of Atmospheric Environment
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    • v.11 no.3
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    • pp.202-216
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    • 2017
  • Nitrogen (N) is an essential macronutrient. Thus, evaluating its flows and stocks in rice paddy ecosystems provides important insights into the sustainability and environmental loads of rice production. Among the N sources of paddy fields, atmospheric deposition and irrigation inputs remain poorly understood. In particular, insufficient information is available for atmosphere-rice paddy exchange of gaseous and particulate reactive N (Nr, all N species other than molecular N) which represents the net input or output through dry deposition and emission. In this study, we assessed the N inputs via atmospheric deposition and irrigation to a Japanese rice paddy area by weekly monitoring for 2 years with special emphasis on gas and particle exchange. The rice paddy during the cropping season acted as a net emitter of ammonia ($NH_3$) to the atmosphere regardless of the N fertilizer applications, which reduced the effects of dry deposition to the N input. Dry N deposition was quantitatively similar to wet N deposition, when subtracting the rice paddy $NH_3$ emissions from N exchange. The annual N inputs to the rice paddy were 3.2 to $3.6\;kg\;N\;ha^{-1}\;yr^{-1}$ for exchange, 8.1 to $9.8\;kg\;N\;ha^{-1}\;yr^{-1}$ for wet deposition, and 11.1 to $14.5\;kg\;N\;ha^{-1}\;yr^{-1}$ for irrigation. The total N input, 22.8 to $27.5\;kg\;N\;ha^{-1}\;yr^{-1}$, corresponded to 38% to 55% of the N fertilizer application rate and 53% to 67% of the brown rice N uptake. Monitoring of atmospheric deposition and irrigation as N sources for rice paddies will therefore be necessary for adequate N management.

Recent Progress on Organic Emitters for Organic Light Emitting Diode Lightings (유기발광다이오드 조명용 유기발광체의 최근 동향)

  • Jung, Hyocheol;Lee, Hayoon;Kang, Seokwoo;An, Byeong-Kwan;Yook, Kyoung Soo;Park, Young-Il;Kim, Beomjin;Park, Jongwook
    • Applied Chemistry for Engineering
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    • v.27 no.5
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    • pp.455-466
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    • 2016
  • Organic light-emitting diode (OLED) has drawn a lot of attention in academic and industrial fields, which has been successfully commercialized in mobile phones and TV's. In the field of lighting, unlike the existing incandescent or fluorescent lighting, OLED has distinctive qualities such as surface lighting-emission, large-area, lightweight, ultrathin, flexibility in addition to low energy use. This article introduces prominent fluorescent, phosphorescent, and luminescent materials applied to white OLED (WOLED). The understanding and systematic classification of previously studied substances are expected to be greatly helpful for the development of new luminous materials in future.

Radiation-induced transformation of Hafnium composition

  • Ulybkin, Alexander;Rybka, Alexander;Kovtun, Konstantin;Kutny, Vladimir;Voyevodin, Victor;Pudov, Alexey;Azhazha, Roman
    • Nuclear Engineering and Technology
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    • v.51 no.8
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    • pp.1964-1969
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    • 2019
  • The safety and efficiency of nuclear reactors largely depend on the monitoring and control of nuclear radiation. Due to the unique nuclear-physical characteristics, Hf is one of the most promising materials for the manufacturing of the control rods and the emitters of neutron detectors. It is proposed to use the Compton neutron detector with the emitter made of Hf in the In-core Instrumentation System (ICIS) for monitoring the neutron field. The main advantages of such a detector in comparison the conventional β-emission sensors are the possibility of reaching of a higher cumulative radiation dose and the absence of signal delays. The response time of the detection is extremely important when a nuclear reactor is operating near its critical operational parameters. Taking Hf as an example, the general principles for calculating the chains of materials transformation under neutron irradiation are reported. The influence of 179m1Hf on the Hf composition changing dynamics and the process of transmutants' (Ta, W) generation were determined. The effect of these processes on the absorbing properties of Hf, which inevitably predetermine the lifetime of the detector and its ability to generate a signal, is estimated.

DEVELOPMENT OF THE DUAL COUNTING AND INTERNAL DOSE ASSESSMENT METHOD FOR CARBON-14 AT NUCLEAR POWER PLANTS

  • Kim, Hee-Geun;Kong, Tae-Young;Han, Sang-Jun;Lee, Goung-Jin
    • Journal of Radiation Protection and Research
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    • v.34 no.2
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    • pp.55-64
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    • 2009
  • In a pressurized heavy water reactor (PHWR), radiation workers who have access to radiation controlled areas submit their urine samples to health physicists periodically; internal radiation exposure is evaluated by the monitoring of these urine samples. Internal radiation exposure at PHWRs accounts for approximately 20 $\sim$ 40% of total radiation exposure; most internal radiation exposure is attributed to tritium. Carbon-14 is not a dominant nuclide in the radiation exposure of workers, but it is one potential nuclide to be necessarily monitored. Carbon-14 is a low energy beta emitter and passes relatively easily into the body of workers by inhalation because its dominant chemical form is radioactive carbon dioxide ($^{14}CO_2$). Most inhaled carbon-14 is rapidly exhaled from the worker's body, but a small amount of carbon-14 remains inside the body and is excreted by urine. In this study, a method for dual analysis of tritium and carbon-14 in urine samples of workers at nuclear power plants is developed and a method for internal dose assessment using its excretion rate result is established. As a result of the developed dual analysis of tritium and carbon-14 in urine samples of radiation workers who entered the high radiation field area at a PHWR, it was found that internal exposure to carbon-14 is unlikely to occur. In addition, through the urine counting results of radiation workers who participated in the open process of steam generators, it was found that the likelihood of internal exposure to either tritium or carbon-14 is extremely low at pressurized water reactors (PWRs).

Vacuum Sealing Technology of the Flat Panel Display by using the Frit Glass Heatable in Vacuum (진공에서 소성 가능한 프릿을 이용한 평판디스플레이 진공실장기술)

  • Kwon, Sang Jik;Yoo, In Sang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.3
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    • pp.181-185
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    • 2016
  • One of the important issues for fabricating the microelectronic display devices such as FED, PDP, and VFD is to obtain a high vacuum level inside the panel. In addition, sustaining the initial high vacuum level permanently is also very important. In the conventional packing technology using a tabulation method, it is not possible to obtain a satisfiable vacuum level for a proper operation. In case of FED, the poor vacuum level results in the increase of operating voltage for electron emission from field emitter tips and an arcing problem, resultantly shortening a life time. Furthermore, the reduction of a sealing process time in the PDP production is very important in respect of commercial product. The most probable method for obtaining the initial high vacuum level inside the space with such a miniature and complex geometry is a vacuum in-line sealing which seals two glass plates within a high vacuum chamber. The critical solution for the vacuum sealing is to develop a frit glass to avoid the bubbling or crack problems during the sealing process at high temperature of about $400^{\circ}C$ under the vacuum environment. In this study, the suitable frit power was developed using a mixture of vitreous and crystalline type frit powders, and a vacuum sealed CNT FED with 2 inch diagonal size was fabricated and successfully operated.

The Vertical Alignment of CNTs and Ni-tip Removal by Etching at ICPHFCVD (ICPHFCVD에 의한 탄소나노튜브의 수직 배향과 에칭을 이용한 Ni-tip의 제거)

  • 김광식;장건익;장호정;류호진
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.4
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    • pp.55-60
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    • 2002
  • This paper presents a technique for the preparation of vertically grown CNTs by ICPHFCVD(inductively coupled plasma hot filament chemical vapor deposition) below $580^{\circ}C$. Purification of the CNTs(carbon nanotubes) using RE(radio frequency) plasma in a one step process, based on the different etching property of the Ni-tip, amorphous carbon and carbonaceous materials is also discussed. After purifying the grown materials. CNTs shown the multi walled and hollow typed structure. The typical outer and inner diameters or CNT were 50 nm and 25 nm, respectively. The graphitic wall was composed of 82 layers and the distance between wall and wall was 0.34 nm. From the results of TEM observation, the Ni catalyst at the tip of the carbon nanotubes were effectively removed by using a RF plasma etching, continuously.

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