• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• 한국산학기술학회논문지
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• 제21권4호
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• pp.20-25
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• 2020

나노과학과 나노기술의 발전에 따라 선택적 패턴 성장을 위한 기술이 주목을 받고 있다. 실리카(Silica) 나노입자는 바이오 라벨링, 바이오 이미징 및 바이오 센싱에 사용되고 있는 유망한 나노소재이다. 본 연구에서는 실리카 나노입자를 수정된 스토버 방법(Stöber Method)인 졸겔(Sol-Gel) 공정으로 합성하였다. 또한 기판의 표면을 미세접촉프린팅 기술로 발수 처리하여 실리카 나노입자를 선택적으로 패턴 성장시켰다. 합성된 실리카 나노입자의 크기와 선택적으로 패턴 성장된 실리카 나노입자의 표면형상을 전계방출 주사전자현미경(Field Emission Scanning Electron Microscopy, FE-SEM)으로 조사하였고, 기판의 표면 기능화에 따른 기판의 접촉각 특성을 조사하였다. 그 결과 OTS 용액으로 발수 처리된 기판에서는 실리카 나노입자를 스핀 코팅하였을 때, 실리카 나노입자를 관찰할 수 없었으나, KOH 용액으로 친수 처리된 기판에서는 실리카 나노입자가 잘 코팅되는 것을 확인하였다. 또한 미세접촉프린팅 기술로 발수 처리한 기판영역 외에서만 실리카 나노입자가 선택적으로 패턴 성장하는 것을 FE-SEM으로 확인하였다. 이러한 실리카 나노입자의 패턴성장 특성을 염료가 도핑 된 실리카 나노입자에 적용한다면, 실리카 나노입자의 패턴 성장 기술은 바이오 이미징 및 바이오 센싱 분야에 유용하게 활용될 것으로 기대된다.

• Journal of Biosystems Engineering
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• 제39권3호
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• pp.227-234
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• 2014

Purpose: The aim of this research was to develop and evaluate natural hydroxyapatite (HA) ceramics produced from the heat treatment of pig bones. Methods: The properties of natural HA ceramics produced from pig bones were assessed in two parts. Firstly, the raw materials were characterized. A temperature of $1,200^{\circ}C$ was chosen as the calcination temperature. Fine bone powders (BPs) were produced via calcinations and a milling process. Sintered BPs were then characterized using field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), X-ray fluorescence spectroscopy (XRF), energy dispersive X-ray spectroscopy (EDX), Fourier transform infrared (FTIR) spectroscopy, and a 2-year in vitro degradability test. Secondly, an indirect cytotoxicity test was conducted on human osteoblast-like cells, MG63, treated with the BPs. Results: The average particle size of the BPs was $20{\pm}5{\mu}m$. FE-SEM showed a non-uniform distribution of the particle size. The phase obtained from XRD analysis confirmed the structure of HA. Elemental analysis using XRF detected phosphorus (P) and calcium (Ca) with the Ca/P ratio of 1.6. Functional groups examined by FTIR detected phosphate ($PO{_4}^{3-}$), hydroxyl ($OH^-$), and carbonate ($CO{_3}^{2-}$). The EDX, XRF, and FTIR analysis of BPs indicated the absence of organic compounds, which were completely removed after annealing at $1,200^{\circ}C$. The BPs were mostly stable in a simulated body fluid (SBF) solution for 2 years. An indirect cytotoxicity test on natural HA ceramics showed no threat to the cells. Conclusions: In conclusion, the sintering temperature of $1,200^{\circ}C$ affected the microstructure, phase, and biological characteristics of natural HA ceramics consisting of calcium phosphate. The Ca-P-based natural ceramics are bioactive materials with good biocompatibility; our results indicate that the prepared HA ceramics have great potential for agricultural and biological applications.

• 터널과지하공간
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• 제24권1호
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• pp.67-80
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• 2014

본 연구에서는 임계하균열성장 변수를 구하기 위해 제안된 Wilkins의 시험법을 압열인장시험과 결합하여 화강암의 인장강도, Mode I 파괴인성과 임계하균열성장지수를 동시에 구하였으며 이를 사용하여 암석의 장기거동을 평가하였다. 또한 내부압력을 받는 압축공기저장(CAES) 공동에 대한 장기안정성을 수치해석코드인 FRACOD를 사용하여 해석하였다. 시험 결과 화강암의 임계하균열성장지수(n)는 29.39로 결정되었으며 5 ~ 6 MPa의 내압은 저장공동의 장기안정성에 큰 영향을 미치지 않는 것으로 나타났다. 또한 시험 과정에서 측정한 미소파괴음을 분석한 결과 암석내의 미소균열 생성 및 전파에 따른 암석의 손상을 정량적으로 기술할 수 있었다. 만약, 실내와 동일한 조건으로 현장에서 AE 모니터링을 수행할 경우 AE 모니터링을 통해서 하중을 받는 암석의 현재 상태를 정량적으로 평가하는 것이 가능할 것으로 판단된다.

• 지질공학
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• 제20권1호
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• pp.89-100
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• 2010

암석의 손상상태를 평가하기위한 여러 방법들이 제안되어 있으나, 일부의 방법은 명확한 손상기준을 제시하기도 하지만 일부의 방법은 매우 모호하여 분석자의 주관에 따라 값이 달라지기도 한다. 그러므로 이 연구에서는 황등화강암을 대상으로 현재까지 제안된 모든 손상기준 결정방법을 적용하여, 각 방법의 적용성, 오차 및 최적의 손상기준결정 방법 등을 연구하였다. 또한 암석의 균열발달 및 파괴특성의 규명에 가장 중요한 손상기준인 균열개시응력과 균열손상응력을 FSR 및 장기 정하중 시험을 이용하여 검정하였다. 황등화강암의 균열닫힘응력과 균열개시응력은 각각 57.5 MPa, 77.6 MPa이며 균열체적변형률에서 측정하는 것이 가장 정확한 것으로 판단된다. 2차 균열개시응력은 90.6 MPa로 측정되었으며, 미소파괴음 계수 및 계수율이 균열개시응력의 측정에 가장 효과적인 것으로 판단된다. 균열결합응력 측정은 체적강성곡선, 미소파괴음 계수 및 미소파괴음 계수율이 가장 효과적인 방법으로 판단되며, 균열결합응력은 110.3 MPa이다. 균열손상응력은 체적강성곡선 및 미소파괴음 계수율에서 가장 명확히 측정되며, 약 127.5 MPa이다. 일축압축강도에 대한 비로서 나타낸 균열개시응력은 0.47로 FSR 값 0.46과 매우 유사하며, 균열손상응력은 0.77로 장기 정하중 시험을 통하여 측정된 장기 강도비 0.75~0.8과 거의 일치하여 균열개시응력 및 균열손상응력 값이 정확함을 검정하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• 한국진공학회지
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• 제17권2호
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• pp.102-108
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• 2008

대향 타겟식 스퍼터링법 (Facing Targets Sputtering)을 이용하여 유리기판위에 증착한 Ag/ZnO 다층 박막의 특성을 연구하였다. Ag 박막의 높은 전도도와 투과율을 나타내는 공정조건을 찾기 위하여, 증착시간, 기판온도 변화에 따른 Ag박막의 특성을 살펴보았으며, ZnO 박막의 두께 변화에 따른 Ag/ZnO 다층박막의 특성을 살펴보았다, 10초간 증착한 Ag 박막은 연속된 막구조를 가지지 못하여, 30초간 증착된 막에 비해 전기적, 광학적 특성이 저하되는 것을 확인할 수 있었다. ZnO 박막의 AFM 측정 결과 박막의 거칠기(Rrms) 값의 변화에 따라 Ag/ZnO박막의 특성에 영향을 미쳤으며, 거칠지 않은 표면을 지닌 박막에서 Ag 박막 증착 시 좋은 특성을 나타냈다. 제작된 박막은 four point probe, UV/VIS spectrometer, AFM을 사용하여 전기적, 광학적, 구조적 특성을 조사하였다. 제작결과 Ag/ZnO 다층박막의 면저항은 9.25 $[\Omega/sq.]$을 나타내었으며, 가시광영역에서 광투과율은 80%이상을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.17-18
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• 2011

Plasma in liquid phase has attracted great attention in the last few years by the wide domain of applications in material processing, decomposition of organic and inorganic chemical compounds and sterilization of water. The plasma in liquid is characterized by three main regions which interact each - other during the plasma operation: the liquid phase, which supply the plasma gas phase with various chemical compounds and ions, the plasma in the gas phase at atmospheric pressure and the interface between these two regions. The most complex region, but extremely interesting from the fundamental, chemical and physical processes which occur here, is the boundary between the liquid phase and the plasma gas phase. In our laboratory, plasma in liquid which behaves as a glow discharge type, is generated by using a bipolar pulsed power supply, with variable pulse width, in the range of 0.5~10 ${\mu}s$ and 10 to 30 kHz repetition rate. Plasma in water and other different solutions was characterized by electrical and optical measurements. Strong emissions of OH and H radicals dominate the optical spectra. Generally water with 500 ${\mu}S/cm$ conductivity has a breakdown voltage around 2 kV, depending on the pulse width and the repetition rate of the power supply. The characteristics of the plasma initiated in ultrapure water between pairs of different materials used for electrodes (W and Ta) were investigated by the time-resolved optical emission and the broad-band absorption spectroscopy. The deexcitation processes of the reactive species formed in the water plasma depend on the electrode material, but have been independent on the polarity of the applied voltage pulses. Recently, Coherent anti-Stokes Raman Spectroscopy method was employed to investigate the chemistry in the liquid phase and at the interface between the gas and the liquid phases of the solution plasma system. The use of the solution plasma allows rapid fabrication of the metal nanoparticles without being necessary the addition of different reducing agents, because plasma in the liquid phase provides a reaction field with a highly excited energy radicals. We successfully synthesized gold nanoparticles using a glow discharge in aqueous solution. Nanoparticles with an average size of less than 10 nm were obtained using chlorauric acid solutions as the metal source. Carbon/Pt hybrid nanostructures have been obtained by treating carbon balls, synthesized in a CVD chamber, with hexachloro- platinum acid in a solution plasma system. The solution plasma was successfully used to remove the template remained after the mesoporous silica synthesis. Surface functionalization of the carbon structures and the silica surface with different chemical groups and nanoparticles, was also performed by processing these materials in the liquid plasma.

• 한국재료학회지
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• 제19권3호
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• pp.132-136
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• 2009

This study investigates GaAs dry etching in capacitively coupled $BCl_3/N_2$ plasma at a low vacuum pressure (>100 mTorr). The applied etch process parameters were a RIE chuck power ranging from $100{\sim}200W$ on the electrodes and a $N_2$ composition ranging from $0{\sim}100%$ in $BCl_3/N_2$ plasma mixtures. After the etch process, the etch rates, RMS roughness and etch selectivity of the GaAs over a photoresist was investigated. Surface profilometry and field emission-scanning electron microscopy were used to analyze the etch characteristics of the GaAs substrate. It was found that the highest etch rate of GaAs was $0.4{\mu}m/min$ at a 20 % $N_2$ composition in $BCl_3/N_2$ (i.e., 16 sccm $BCl_3/4$ sccm $N_2$). It was also noted that the etch rate of GaAs was $0.22{\mu}m/min$ at 20 sccm $BCl_3$ (100 % $BCl_3$). Therefore, there was a clear catalytic effect of $N_2$ during the $BCl_3/N_2$ plasma etching process. The RMS roughness of GaAs after etching was very low (${\sim}3nm$) when the percentage of $N_2$ was 20 %. However, the surface roughness became rougher with higher percentages of $N_2$.

• 한국재료학회지
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• 제13권8호
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• pp.497-502
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• 2003

Crystallographic characteristics and interfacial structures of $Al_2$$O_3$and $ZrO_2$dielectric films prepared by atomic layer chemical vapor deposition (ALCVD) were investigated at atomic scale by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS)/electron energy-loss spectroscopy (EELS) coupled with a field-emission transmission electron microscope. The results obtained from cross-sectional and plan-view specimens showed that the $Al_2$$O_3$film was crystallized by annealing at a high temperature and its crystal system might be evaluated as either cubic or tetragonal phase. Whereas the $ZrO_2$film crystallized during deposition at a low temperature of ∼$300^{\circ}C$ was composed of both tetragonal and monoclinic phase. The interfacial thickness in both films was increased with the increased annealing temperature. Further, the interfacial structures of X$ZrO_2$$O_3$and $ZrO_2$films were discussed through analyses of EDS elemental maps and EELS spectra obtained from the annealed films, respectively.