• Journal of Information Display
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• 제10권4호
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• pp.143-148
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• 2009

The theoretical current density equations for organic semiconductors was derived according to the internal carrier emission equation based on the diffusion model at the Schottky barrier contact and the mobility equation based on the field dependence model, the so-called "Poole-Frenkel mobility model." The electric field becomes constant because of the absence of a space charge effect in the case of a higher injection barrier height and a lower sample thickness, but there is distribution in the electric field because of the space charge effect in the case of a lower injection barrier height and a higher sample thickness. The transition between the injection- and bulk-limited currents was presented according to the Schottky barrier height and the sample thickness change.

• 한국통신학회논문지
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• 제25권8B호
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• pp.1469-1476
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• 2000

증가형 MOS FET에서 강반저의 경우 드레인 전류는 모두 드리프트에 기인하여 흐르기 때문에 I-V모델링시 수직전계와 수평전계를 함께 고려하여야한다. 특히 게이트전압 인가시 발생되는 수직전계는 표면이동도에 영향을 크게 주고 이로 인해서 캐리어들의 정상적인 흐름이 저해되는데 본 논문에서 제안한 다중 box분할법에 의하여 반전층의 깊이를 구하여 이동도 모델에 영향을 크게 미치는 반전층 내에서의 수직전계를 수치해석하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.889-892
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• 2004

We developed a high performance bottom contact, organic thin-film transistor (OTFT) array on plastic using a self-organized process. The effect of OTS treatment on the PVP gate insulator for the performance of OTFT on plastic has been studied The OTFT without OTS exhibited a field-effect mobility of 0.1 $cm^2$/Vs on/off current ratio of > $10^7$. On the other hand, OTFT with OTS, exhibited a field-effect mobility of 1.3 $cm^2$/Vs and on/off current ratio of>$10^8$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.870-873
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• 2001

The electron drift mobilitity of poly(4,4'-cyclohexylidenediphenyl carbonate)(PC-Z) doped with 3,5-dimethyl-3',5'-di-t-butylstilbenequinone(MBSQ) was measured by the time-of-flight technique. Energy gap of the polymer doped with 25wt% of MBSQ was 3.1 eV. The electron drift mobility was 2.98${\times}$10$\^$-6/$\textrm{cm}^2$/V$.$s at 293K. The electric field and temperature dependences of the electron drift mobility were discussed with Poole-Frenkel and Arrhenius formulations. The activation energy(E$\_$0/), Poole-Frenkel coefficient(${\beta}$) and effective temperature(T$\_$eff/) of the mobility are 0.815 eV, 1.73${\times}$10$\_$-4/ eV$.$cm$\^$1/2//V$\_$1/2/ and 6.43${\times}$10$^2$K, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1239-1241
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• 1995

The different hydrogen passivation effects on low-temperature processed and high-temperature processed poly-Si thin film transistors have been investigated. The hydrogen passivation on low-temperature processed poly-Si TFT results in the increase of the field-effect mobility and the decrease or the threshold voltage, while the hydrogenation increases the field-effect mobility and decreases the leakage current in high-temperature processed poly-Si TFT. The effective trap state densities of low-temperature processed poly-Si TFT before and after 5 hours of hydrogenation are estimated at about $4.0{\times}10^{12}/cm^2$ and $1.5{\times}10^{12}/cm^2$, while those of high-temperature processed poly-Si TFT are about $1.5{\times}10^{12}/cm^2$ and $1.2{\times}10^{12}/cm^2$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.43-44
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• 2009

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.504-505
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• 2008

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• 한국결정성장학회지
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• 제17권5호
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• pp.187-191
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• 2007

The device performance of ZnO-thin film transistors(ZnO-TFTs) with gate dielectrics of $SiO_2,\;SiN_x$ and Polyvinylphenol(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with $SiN_x$ were $20.2cm^2V^{-1}s^{-1}\;and\;5{\times}10^6$ respectively which is higher than those previously reported. The device adoptable values of the mobility of $1.37cm^2V^{-1}s^{-1}$ and the on/off ratio of $6{\times}10^3$ were evaluated from the device with organic PVP dielectric.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.377-377
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• 2014

We demonstrate the high temperature-dependent electrical behavior at 2D multilayer MoS2 transistor. Our previous reports explain that the extracted field-effect mobility of good device was inversely proportional to the increase of temperature. Because scattering mechanism is dominated by phonon scattering at a well-designed MoS2 transistor, having, low Schottky barrier. However, mobility at an immature our $MoS_2$ transistor (${\mu}m$ < $10cm^2V^{-1}s^{-1}$) is proportional to the increase temperature. The existence of a big Schottky barrier at $MoS_2-Ti$ junction can reduce carrier transport and lead to lower transistor conductance. At high temperature (380K), the field-effect mobility of multilayer $MoS_2$ transistor increases from 8.93 to $16.9cm^2V^{-1}sec^{-1}$, which is 2 times higher than the value at room temperature. These results demonstrate that carrier transport at an immature $MoS_2$ with a high Schottky barrier is mainly affected by thermionic emission over the energy barrier at high temperature.