• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.63-64
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• 2007

Polystyrene-block-polymethyl methacrylate (PS-b-PMMA) can pattern nanoscale structures over large areas. However these patterns have a short-range order. These short-range order limits their utility in some applications. Consequently, we have to overcome this limitation of block-copolymer. In this study we added a electrical field to the standard block-copolymer patterning method for long-range ordered arrays of nanostructures. This method is conformed by annealing a block copolymer with applied voltages. It is very simple method that do not have any additional hour. In this reason it can be applied easily for other nanostructure fabrications. This method opens up a new route to the controlled phase separation of block copolymers with precise place of the nanostructures.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.1-5
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• 2021

Field-effect transistors based on solution-processed metal oxide semiconductors has attracted huge attention due to their intrinsic characteristics of optical and electrical characteristics with benefits of simple and low-cost process. Especially, spray-pyrolysis has shown excellent device performance which compatible to vacuum-processed Field-effect transistors. However, the high annealing temperature for crystallization of MOS and narrow range of precursors has impeded the progress of the technology. Here, we demonstrated the nc-ZnO/ZnO films performed by spray-pyrolysis with incorporating ZnO nanoparticles into typical ZnO precursor. The films exhibit preserving morphological properties of poly-crystalline ZnO and enhanced electrical characteristics with potential for low-temperature processability. The influence of nanoparticles within the film was also researched for realizing ZnO films providing good quality of performance.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.521-524
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• 1999

Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.

• Polymer(Korea)
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• v.30 no.6
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• pp.563-567
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• 2006

Poly(vinyl alcohol) (PVA) and gelatin (GEL) blend membranes were prepared by solution casting method under a high electric field. SEM observation of the membrane showed that gelatin rich domains were elongated and oriented to the direction of the applied electric field in PVA matrix. This can be attributed to the electrostatic emulsifying effects due to a reduction in interfacial tension. In addition, it was observed through WAXD and swelling measurements that the degree of crystallinity of membranes increased with applied electric field strength. This may be interpreted to be caused by the orientation effect of GEL domains in the blend membrane, and the self-annealing effect due to some heat generated from high electric field during casting.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.76.2-76.2
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 1997.11a
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• pp.74-75
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• 1997

• Proceedings of the Korean Information Science Society Conference
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• 2003.10a
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• pp.364-366
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• 2003

본 논문에서는 병렬처리에서 중요한 부하균형 문제에 대한 새로운 솔루션을 소개한다. 제안하는 매핑 알고리즘은 평균장 어닐링과 유전자 알고리즘을 합성한 휴리스틱 부하균형 기법이다. 합성된 알고리즘을 세 개의 다른 알고리즘들과의 성능향상비를 측정하는 성능평가 시뮬레이션을 개발하였고 솔루션 품질과 수행시간 면에서 우지의 방법은 기존의 것들 보다 개선된 실험결과를 얻었다.

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.92-92
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• 2016

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.443-450
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• 2014

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.

• Journal of the Korean Magnetics Society
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• v.13 no.6
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• pp.231-236
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• 2003

The $Al_{0.2}$CoF $e_{1.8}$ $O_4$ferrite powders have been prepared by the sol-gel method. The crystallographic and magnetic properties of the sample depending on annealing temperature have been investigated by means of x-ray diffraction, FE SEM, Mossbauer spetroscopy and vibrating sample magnetometry. The x-ray diffractions of all samples annealing temperature above 873 K clearly indicate the presence of spinel structure, the lattice constant decrease from 8.425 $\AA$ at 873 K to 8.321 $\AA$ at 1073 K, whereas the particle size rapidly increase from about 39 nm at 673 K to about 108 nm at 1073 K. The Mossbauer spectra annealed above 873 K could be fitted as the superposition of two sextets due to F $e^{3+}$ at A-site and B-site. The isomer shift (IS) and quadruple splitting (QS) values nearly constant with annealing temperature, whereas magnetic hyperfine field ( $H_{hf}$) of A-site slowly in crease and that of B-site fastly increases with increasing annealing temperature. The magnetic behaviour of powders shows that the saturation magnetization increase from 0.7 emu/g at 473 K to 72.1 emu/g at 1073 K while the coercivity decrease from 0.951 kOe at 673 K to 0.374 kOe at 1073 K with increasing annealing temperature.