• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.465-468
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• 1999

Electrical properties of metal-ferroelectric-semiconductor field effect transistor(MFSFET) using $BaMgF_4$ thin films grown on p-Si(100) substrates have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}C$ in an ultra high vacuum(UHV) system. First an in-situ post-deposition annealing was conducted for 20s at $650^{\circ}C$ and second an in-situ post-annealing was conducted for 10s at $950^{\circ}C$. The electrical properties of MFSFET compared with using A1 and Pt electrodes.

• Journal of Magnetics
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• v.10 no.1
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• pp.33-35
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• 2005

Perpendicular magnetization curves and crystal textures of $[Pd(0.8 nm)/Co(0.8 nm)]_5/FeMn$ multilayers having an exchange-biased perpendicular magnetic anisotropy as a function of FeMn thickness and annealing temperature were measured. As FeMn thickness increases from 0 to 21 nm, the perpendicular exchange biasing field ($H_{ex}$) obtained the maximum value of 130 Oe at FeMn thickness 12 nm. As the annealing temperature increases to $240^{\circ}C$, the H_ex increased from 115 Oe to 190 Oe and the exchange-biased perpendicular magnetic anisotropy disappeared at $330^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.425-428
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• 1999

In this paper, the electrical properties of Pt/YMnO$_3$/Si(100) structures with difference rapid thermal annealing (RTA) treatment were investigated. YMnO$_3$films were obtained without buffer layers, introducing oxygen. A typical value of the dielectric constant was about 20 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 150kV/cm was about 1.34$\times$10$^{12}$ $\Omega$ . cm. The minimum interface state density around midgap was estimated to be about 5$\times$10$^{11}$ cm$^2$. eV.

• Journal of the Korean Ceramic Society
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• v.44 no.5 s.300
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• pp.141-143
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• 2007

Nanotubes and microtubes of ferroelectric lead zirconate titanate (PZT) were synthesized by means of a simple and convenient process called a template-wetting process. Nanoporous alumina and macroporous Si were used as template materials to fabricate the corresponding tubes. For the improvement of the wetting properties of the wetting solution, the PZT solution was mixed with a polymer. The polymer was removed completely during annealing. The grain growth processes of the PZT nanotubes during baking and furnace annealing were examined by means of field emission electron microscope (FE-SEM) and X-ray diffractometry (XRD).

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1106-1109
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• 1993

Ferroelectric thin films of PZT with differnt Zr/Ti ratio were prepared by sol-gel processing and annealed by rapid-thermal-annealing at $500^{\circ}C-700^{\circ}C$ for 10sec-1min. The structure of the annealed films were examined by X-ray diffraction and SEM. Maximum remnant polarization of 10.24 ${\mu}m/cm^2$ and coercive field of 70 KV/cm were obtained from hysteresis curve or the film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.13 no.10
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• pp.743-750
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• 2003

The equivalent source method(ESM) is used for the calculation of the internal pressure field for an enclosure which can have arbitrary boundary conditions and nay include internal objects which scatter the sound field. The advantage of using ESM is that it requires relatively low computing cost and is easy to model the internal diffracting objects. Typical ESM modeling uses two groups of equivalent source positions. One group includes the first order images of the source inside the enclosure. The Positions of the other group are usually on a spherical surface some distance outside the enclosure. The normal velocity on the surfaces of the enclosure walls is evaluated at a larger number of positions than there are equivalent sources. The sum of the squared difference between this velocity and the expected is minimized by adjusting the strength of the equivalent sources. This study is on the optimal far field sources positions when using the equivalent source method. In general, the far field sources are evenly distributed on a surface of a virtual sphere which is centered at the enclosure with a sufficiently large radius. In this study. optimal far field source locations are searched using simulated annealing method for various radii of spheres where far field sources are located. Simulation results showed that optimally located sources with adequate distance away from the enclosure center gave better result than sources with even distribution even with a smaller number of far field sources.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.638-644
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• 1993

The degradation of dielectric breakdown field of 8nm-thick gate oxide ($SiO_2$) for Tipolycide MOS(meta1-oxide-semiconductor) capacitor with different annealing conditions and thickness of the polysilicon film on gate oxide was investigated. The degree of degradation in dielectric breakdown strength of the gate oxide for Ti-polycide gate became more severe with increasing annealing temperature and time, especially, for the case that thickness of the polysilicon film remained on the gate oxide after silicidation was reduced. The gate oxide degradation may be occurred by annealing although there is no direct contact of Ti-silicide with gate oxide. From SIMS analysis, it was confirmed that the degration of gate oxide during annealing was due to the diffusion of titanium atoms into the gate oxide film through polysilicon from the titanium silicide film.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.509-514
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• 1999

Interest in the integrated capacitors, which make it possible to reduce the size of and to obtain improved electrical performance of an electronic system, is expanding. In this study, $Ta_2$O\ulcorner thin film capacitors for MCM integrated capacitors were fabricated on a Upilex-S polymer film by DC magnetron reactive sputtering and the effects of low temperature annealing at various atmospheres and substrate surface morphology on the capacitor characteristics were discussed. The low temperature($150^{\circ}C$) annealing produced improved capacitor yield irrespective of the annealing at mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably due to the change of the $Ta_2$O\ulcorner film surface by oxygen, which was explained by conduction mechanism study. Leakage current and breakdown field strength of the capacitors fabricated on the Upilex-S film were 7.27$\times$10\ulcornerA/$\textrm{cm}^2$ and 1.0 MV/cm respectively. These capacitor characteristics were inferior to those of the capacitors fabricated on the Si substrate but enough to be used for decoupling capacitors in multilayer package. Roughness Analysis of each layer by AFM demonstrated that the properties of the capacitors fabricated on the polymer film were affected by the surface morphology of the substrate. This substrate effect could be classified into two factors. One is the surface morphology of the polymer film and the other is the surface morphology of the metal bottom electrode determined by the deposition process. Therefore, the control of the two factors is important to obtain improved electrical of capacitors deposited on a polymer film.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.5
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.