• Journal of Magnetics
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• v.4 no.1
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• pp.33-37
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• 1999

Unidirectional magnetic anisotropy field ($H_an$) was investigated for thin films of $CdCr{2-2x}In_{2X}Se_4 (0$\leq$x$\leq$0.2). This anisotropy originates from the microscopic anisotropic Dzyaloshinskii-Moriya (DM) interaction which arise from the spin-orbit scattering of the conduction electrons by the nonmagnetic impurities. This interaction maintains the remanent magnetization in the direction of the initial applied field. Then the single easy direction of the magnetization is parallel to the direction of the magnetic field. The anisotropy produced by field cooling is unidirectional I.e. the spins system deeps some memory of the cooling field direction. The chalcogenide spinel of$ CdCr_{2-2x}In){2X}Se_4$belongs to the class of the magnetic semiconductors. The magnetic disordered state is obtained when ferromagnetic structure is diluted by In. Then we have the mixed phase characterised by coexistence the magnetic long range ordering (IFN-infinite ferromagnetic network) and the spin glass order (Fc-finite clusters). The total magnetic anisotropy energy depends on the state of magnetic ordering. In our study we concentrated on the magnetic state with reentrant transition and spin glass state. The polycrystalline $ CdCr_{2-2x}In){2X}Se_4$ thin films were obtained by rf sputtering technique. We applied the ferromagnetic resonance (FMR) and M-H loop techniques for determining the temperature composition dependencies of Han. From the experimental data, we have found that Han decreases almost linearly when temperature is increased and in the low temperature is about three times bigger at SG state with comparison to the state with REE.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.12-15
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• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• Journal of Magnetics
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• v.15 no.2
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• pp.51-55
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• 2010

The electronic and magnetic properties of Cu-doped GaN with a Cu concentration of 6.25% and 12.5% are examined theoretically using the full-potential linear muffin-tin orbital method. The magnetic moment of Cu atoms decreases with increasing Cu concentration. The spin-polarization of Cu atoms is reduced due to the Cu d-d interaction depending on the distance between the nearest neighbouring Cu atoms. Cu atoms exhibits a clustering tendency in GaN. For Cu-adsorbed GaN thin films with a surface coverage of 0.25, the ferromagnetic state is found to be the energetically favourable state with an induced magnetic moment of $0.54\;{\mu}_B$ per supercell.

• Journal of Magnetics
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• v.14 no.3
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• pp.114-116
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• 2009

The electronic properties of Cu or Pd-doped GaN at several concentrations are examined using the full-potential linear muffin-tin orbital method. For ($Cu_{0.055}Ga_{0.945}$)N, the model reveals a magnetic moment of $1.47{\mu}B$ per supercell. The range of concentrations that are spin-polarized should be restricted within narrow limits. A paramagnetic to ferromagnetic phase transition is found to occur at a Cu concentration of 5.55%.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.49-54
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• 2020

We studied the electronic and magnetic properties for the Mn-doped chalcopyrite (CH) AlAs, GaAs, and AlGaAs₂ semiconductor by using the first-principles calculations. The chalcopyrite AlGaP₂, AlGaAsP, and AlGaAs₂ compounds have a semiconductor characters with a small band-gap. The interaction between Mn-3d and As-4p states at the Fermi level dominate rather than the other states. The ferromagnetic ordering of dopant Mn with high magnetic moment is induced due to the Mn(3d)-As(4p) strong coupling, which is attributed by the partially filled As-4p bands. The holes are mediated with keeping their 3d-electrons, therefore the ferromagnetic state is stabilized by this double-exchange mechanism. We noted that the ferromagnetic state with high magnetic moment is originated from the hybridized As(4p)-Mn(3d)-As(4p) interaction mediated by the holes-carrier.

• Journal of Magnetics
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• v.16 no.2
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• pp.101-103
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• 2011

Solid solutions between $BaTiO_3$ and $LaFeO_3$ have been prepared through a solid state reaction method. The X-ray diffraction results reveal that $Ba_{1-x}La_xTi_{1-x}Fe_xO_3$ ($0.1\;{\leq}\;x\;{\leq}\;0.7$) compounds have a cubic structure, whereas the parent material $BaTiO_3$ has a tetragonal structure. The magnetization measurements indicate that the materials have a magnetic ordering at room temperature and the magnetic properties of the solid solutions depending on the doping amount of $LaFeO_3$. The origin of magnetic behaviors is believed to be from $Fe^{3+}$ ions.

• Journal of Magnetics
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• v.8 no.2
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• pp.85-88
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• 2003

The magnetic and transport properties far single crystals of Ru-doped mono-layered manganites $La_{0.5}Sr_{1.5}-Mn_{1-x}Ru_xO_4$ (0$\leq$$\chi$$\leq$0.1) have been studied using neutron diffraction and magnetization measurements. Temperature dependent magnetization data reveal that with an increase in the Ru concentration the parent charge ordered antiferromagnetic state is gradually destroyed and new ferromagnetic phase evolves. In the low Ru-doped system spin glass behavior is apparent in low temperature region, which is confirmed by ac and do magnetization measurements. The competing magnetic interaction between Mn/Mn and Mn/Ru couples is the most likely cause of the spin glass transition.

• Proceedings of the Korean Magnestics Society Conference
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• 2011.12a
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• pp.57-58
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• 2011

We have carried out magnetic and spectroscopic studies on the physical properties of hydrothermally-treated PCBM samples. Strong ferromagnetic ordering was observed depending on the treatment time, and was studied in relation to the atomic bonding configurations.

• Proceedings of the Korean Magnestics Society Conference
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• 2013.05a
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• pp.15-16
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• 2013

Magnetization behavior of ultra thin $Fe_xCo_{1-x}$ alloy (where x varies from 0 to 100) has been investigated as functions of composition on Cr (100) substrate by using in situ surface magneto optical Kerr effect (SMOKE). It's always show in plane uniaxial magnetic anisotropy at room temperature (RT) & Low temperature (LT). It is observed that composition dependent coercive force maximum at about 30 at % Co and 70 at % Co atomic ratio and minimum near equiatomic site. The relative magnetic moments as composition variation also show magnetization collapse near equiatomic site. The magnetization behaviors of Fe-Co alloy on Cr (100) due to composition varies are supported the order-disordering as well as structural stability bcc (ferromagnetic)/fcc (anti-ferromagnetic) phase stability magnetism.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.573-578
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• 2003

The structural, magnetic, and transport properties of a mono-layered manganite $La_{0.7}Sr_{1.3}MnO_{4+{\delta}}$ were investigated using variable temperature neutron powder diffraction as well as magnetization and transport measurements. The compound adopts the tetragonal I4/mmm symmetry and exhibits no magnetic reflection in the temperature region of 10 K ≤ T ≤ 300 K. A weak ferromagnetic (FM) transition occurs about 130 K, which almost coincides with the onset of a metal-insulator (M-I) transition. Extra oxygen that occupies the interstitial site between the [(La,Sr)O] layers makes the spacing between the [MnO₂] layers shorten, which enhances the inter-layer coupling and eventually leads to the M-I transition. We also found negative magneto resistance (MR) below the M-I transition temperature, which can be understood on the basis of the percolative transport via FM metallic domains in the antiferromagnetic (AFM) insulating matrix.