• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1553-1555
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• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.489-492
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• 2005

We report new polymer stabilized ferroelectric liquid crystal (PSFLC) cells with mechanical stability which is achievable by introducing photospacers in the cells. It was found that the mechanical st ability of the PSFLC cell was effected by introduction of photo spacers. We analyzed the dependence of mechanical stability and memory property on the density of photospacers in the PSFLC cell. The stability and memory properties of PSFLC Cells depending on photospacer density are discussed. 1. Introduction Recently, flexible displays have attracted much attention because they have remarkable advantages: thinner, lighter, non-breakable and conformable features. Flexible displays have various potential applications such as e-book and e-paper displays utilizing the distinct features. E-book and E-paper displays demand very low power consumption, so that bistable memory liquid crystal modes are required in case of flexible plastic LCDs for those application. Three kinds of memory LC modes have been developed; bistable nematic, bistable cholesteric and bistable FLC. Among them SSFLC as one of bistable FLC has big advantages such as low driving voltage, wide view angle and fast response time, SSFLC cells are, however, very weak against mechanical shock. Polymer stabilized FLC (PSFLC) has been developed to overcome the poor mechanical stability of SSFLC. PSFLC was known to have network structure that FLCs are oriented with smectic layer ordering in polymer network. The polymer network stabilizes the FLC orientation, which leads to improvement of mechanical stability of PSFLCD. A lot of studies have been done for the application of PSFLC to flexible $LCDs.^{[1{\sim}12]}$ However, it should be noted that PSFLC does not have sufficient mechanical stability for the particular applications such as smart card LCD, where LCD is highly bendable.Bead spacer was mainly used to maintain cell gap of conventional PSFLCDs. But the spacer density of it is not locally uniform in the cell, so that it is generally difficult that the PSFLCDs with bead spacers show sufficient mechanical stability. In order to more improve the mechanical stability of PSFLCDs, we introduced photospacers into PSFLCDs. In this paper, we describe the improvement of mechanical stability by introducing photospacers into PSFLCDs.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.199-203
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• 2000

$Ta_2_O5$ and $Sr_0.8Bi_2.4Ta_2O_9$ films were deposited on p-type Si(100) substrates by a rf-magnetron sputtering and the metal organic decomposition (MOD), respectively.The electrical characteristics of the $Pt/SBT/Ta_2O_5/Si$ structure were obtained as the functions of $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering and $Ta_2_O5$ thickness. And to certify the role of $Ta_2_O5$ as a buffer layer, the electrical characteristics of $Pt/SBT/Ta_2O_5/Si$ were compared. $Pt/SBT/Ta_2O_5/Si$ capacitor with 20% $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering did now show typical C-V curve of metal/ferroelectric/insulator/semiconductor (MFIS) structure. The capacitor with 20% $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering had the largest memory window. And the memory window was decreased as the $Ta_2_O5$ gas flow ratio during the $Ta_2_O5$ sputtering was increased to 40%, 60%. In the C-V characteristics of the $Pt/SBT/Ta_2O_5/Si$ capacitors with the different $Ta_2_O5$ thickness, the capacitor with 26nm thickness of $Ta_2_O5$ had the largest memory window. The C-V and leakage current characteristics of the Pt/SBT/Si structure were worse than those of $Pt/SBT/Ta_2O_5/Si$ structure. These results and Auger electron spectroscopy (AES) measurement showed that $Ta_2_O5$ films as a buffer layer tool a role to prevent from the formation of intermediate phase and interdiffusion between SBT and Si.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.116-119
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• 2000

The a-axis and c-axis prefer oriented SBT thin films could be deposited on Pt(111)/Ti/$SiO_2$$650^{\circ}C$). The c-axis preferred orientation of SBT film can be obtained by Sr deficiency and high compressive stress. However, the a-axis-oriented grains can be formed under stoichiometric Sr content and nearly stress-free state.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.114-114
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• 2012

Even though graphene was introduced with a great hope to replace silicon in future, small (or zero) band gap and poor stability have become major challenges in graphene electronics. Especially, rectification and amplification function which are the elemental functions of silicon device, is very difficult to implement without a bandgap. However, the graphene can still be used in many other device applications if the merits of graphene are creatively utilized. For example, graphene can be applied to almost any kind of substrate. Its conductivity can be varied in some degree using electric field, charge dipole, attached molecules, and many other ways. Recently, graphene stacked with ferroelectric materials or piezoelectric materials has been actively studied for various device applications. In this talk, various device applications of graphene using hybrid stack or novel device structure will be introduced and their prospect will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.74-77
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• 2002

Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.125-125
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• 2003

PZT(Pb(Zr,Ti)O3)는 우수한 강유전 특성을 가지기 때문에 FRAM (Ferroelectric Random Access Memory) 소자에 응용하기 위해 많은 연구가 진행되고 있다. 스퍼터에 의해 증착된 PZT는 처음에 pyrochlore상으로 존재하다가 후 열처리를 통해 이력 특성을 나타내는 perovskite상으로 천이된다. 일반적인 furnace열처리 방법은 고온에서의 장시간 열처리가 요구되고 Pb-loss현상이나 TiO2와 같은 이차상의 생성 그리고 하부 Pt전극의 roughness증가 및 crack과 같은 문제점이 있다. 최근 들어 후 열처리를 RTA로 이용하는 연구가 진행되고 있는데 이는 열처리 시간이 짧기 때문에 위와 같은 문제점을 개선할 수 있었다. 하지만 RTA방법 또한 어느 정도의 thermal budget이 존재하고 추가적 장비가 필요하며 기판의 전체적 가열공정이므로 다른 CMOS공정과 compatibility가 떨어진다. 따라서 본 실험에서는 위와 같은 문제를 해결하고자 노력을 집중하였고 이를 위한 새로운 열처리 방법을 개발하였다. 즉 Pt 하부전극에 전압(전류)을 인가하여 순간적으로 고온으로 결정화시키는 새로운 공정을 모색하였는데 이와 같은 방법은 열처리를 위한 추가적인 장비가 필요없고 국부적으로 순간적인 가열이기 때문에 glass기판에도 적합하며 RTA보다 승온시간 및 열처리 시간이 짧기 때문에 thermal budget도 줄일 수 있었다.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.46-52
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• 1998

In this study, polarization switching characteristics of Pb(ZrxTil-x)O3 (PZT) thin films were investigated. Switching times(ts) were found to be decreased as the Zr mol% was increased. But, the switching peak currents(Imax) showed the largest value at 50 mol% Zr. As a result of this experiment, ts was found to be depended on the remanent polarization and coercive field and also Imax strongly depended on the dielectric constant of PZT thin films. In order to investigate the partial switching kinetics of PZT thin films, short and relatively small voltage pulses were applied to the MFM(metalferroelectric metal) PZT capacitors and polarization switching curves were measured with a variation of the total width of the applied pulses. Also, the switching curves were measured at different applied voltages(4, 8, 10, 12 and 14 volts). As the applied voltages increased, ts and Imax were found to be decreased and increased, respectively. In case of fatigued specimen which we applied $\pm$10 volts square pulse for 1010 cycles, ts and Imax were found to be shorter and smaller than those of virgin specimens. This is due to the decrease of the remanent polarization and the increase of the coercive field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.570-573
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• 2002

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.