• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.217-220
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• 2000

The SrBi$_2$Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF sputtering method. The SBT thin films deposited on substrate at 400-500[$^{\circ}C$]. SBT thin film deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. With increasing annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], flourite phase was crystallized to 650[。 and Bi-layered perovskite phase was crystallize ed above 700[$^{\circ}C$]. The maximum remnant polarization and the coercive electric field is 11.73[${\mu}$C/$\textrm{cm}^2$], 85[kV/cm] respectively at annealing temperature of 750[$^{\circ}C$]. The fatigue characteristics of SBT thin films deposited on Pt/TiO$_2$/SiO$_2$/Si substrate did not change up to 10$\^$10/ switching cycles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.186-189
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• 2003

The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $ZrO_2$ and $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the $ZrO_2$ and $CeO_2$ layer. AES show no interdiffusion and the formation of amorphous $SiO_2$ layer is suppressed by using the $ZrO_2$ and $CeO_2$ film as buffer layer between the BLT film and Si substrate. The width of the memory window in the C-V curves for the $BLT/ZrO_2/Si$ and $BLT/CeO_2/Si$ structure is 2.94 V and 1.3V, respectively. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.49-52
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• 2003

The role of gas ratio with the crystallization behavior and electrical properties in $Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films by rf magnetron sputtering method has not been precisely defined. In this work, the ferroelectric properties of these films with gas variation was investigated. BLT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all BLT films indicated perovskite polycrystalline structure with preferred orientation (020) and (0012). And no pyrochlore phase was observed. The fabricated film annealed with $O_2$ of 15 sccm showed that value of leakage current was $9.67{\times}10^{-7}A/cm^2$ at 50kV /em, and the value of remanent polarization (2Pr=Pr+-Pr-) was $11.8{\mu}C/cm^2$. Therefore we induce access to memory device application by rf-magnetron sputtering method in this report.

• 한국전기전자재료학회논문지
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• 제28권10호
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• pp.615-619
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• 2015

In this study, in order to develop the composition ceramics with the excellent electrocaloric properties, 8/65/35 PLZT ceramics were fabricated by the conventional solid-state method with the addition of $Bi_2O_3$, CuO, $Li_2CO_3$ and the variation of sintering temperature from $930^{\circ}C$ to $990^{\circ}C$. The XRD pattern of all specimens indicated general perovskite structure and the rhombohedral phase were observed. Curie temperature ($T_c$) of all specimens was observed in the vicinity of about $190^{\circ}C$. Density, coercive field and remnant polarization of the specimen sintered at $950^{\circ}C$ was $7.55g/cm^3$, 8.895 kV/cm, $11.22{\mu}C/cm^2$, respectively. EC effect of PLZT ceramics was measured by indirect method and the temperature change ${\Delta}T$ due to the electrocaloric effect was calculated by Maxwell's relations. ${\Delta}T$ of ceramic sintered at $950^{\circ}C$ was $0.21^{\circ}C$ under application of 40 kV/cm at $190^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제28권9호
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• pp.577-580
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• 2015

In this paper, in order to develop the composition ceramics with the outstanding piezoelectric properties, $Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.09}(Zr_{0.5}Ti_{0.5})_{0.88}O_3$ ceramics substituted with $BiFeO_3$ were prepared by the conventional solid-state reaction method. The addition of small amount of $Li_2CO_3$ and $CaCO_3$ as sintering aids decreased the sintering temperature of the ceramics. The effects of $BiFeO_3$ substitution on their piezoelectric and dielectric properties were investigated. when 0.015 mol $BiFeO_3$ was substituted, the optimal physical properties of $d_{33}=590pC/N$, $E_c=8.78kV/mm$ were obtained.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.632-635
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• 2011

Additions (ZnO, CuO) doped $0.98(Na_{0.5}K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ta_{0.83})O_3$ (0.98NKN-0.02LST-x) lead free piezoelectric ceramics have been fabricated by ordinary sintering technique. The effects of additions doping on the dielectric, piezoelectric, and ferroelectric properties of the ceramics were mainly investigated. X-ray diffraction of the sample appeared orthorhombic phase. The specimen doped with additions exhibits enhanced electrical properties ($d_{33}$= 153 pC/N). These results indicate that the 0.98NKN-0.02LST-x ceramics is a promising candidate for lead-free piezoelectric ceramics for applications such as piezoelectric actuators, harmonic oscillator and so on.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.149-152
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• 1997

High-power piezoelectric materials are being developed for applications such as actuators and ultrasonic motors. In this paper, ferroelectric property of iron-doped 0.57 (Sc$_{1}$2//Nb$_{1}$2/)O$_3$-0.43 PbTiO$_3$. which is the morphotropic phase boundary composition for the PSN-PT system, was investigated. The maximum dielectric constant ( $\varepsilon$$_{33}$/$\varepsilon$$_{0}$ = 2551) and the minimum dielectric loss(tan $\delta$ = 0.51 %) at room temperature were obtained at 01. wt% and 0.3 wt% of iron additions. With additions of the Fe$_2$O$_3$ the electromechanical coupling factor of radial mode k$_{p}$ and the piezoelectric coefficient d$_{33}$ were slightly decreased, on the other hand the mechanical quality factor was increased significantly. The highest mechanical quality factor (Qm= 297) was obtained at 0.3 wt% Fe$_2$O$_3$, which is 4.4 times larger than that of pure 0.57 PSN-0.43PT ceramics. The temperature dependence of the dielectric constant and dielectic loss was observed between 2$0^{\circ}C$ and 35$0^{\circ}C$ .X> .X> .

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.206-210
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• 1997

In the fields of the optics, precise machine, semiconductors, the micro-positioning actuators are required for the control of position in the submicron range. PNN-P2N-PZT ceramics were fabricated with various mole ratio of the PZT[Pb(Zr$_{1}$2//Ti$_{1}$2)O$_3$]. PNN (Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$]and PZN[Pb(Zn$_{1}$3//Nb/sbu 2/3/)O$_3$] powders prepared by double calcination and PZT powders prepared by molten- salt synthesis method. The relative permittivity of specimen with PZT 0.3 mole ratio was shown 5,320 and appeared the relaxor ferroelectric feature. The maximum Piezoelectric coefficient d$_{31}$ to be used for evaluation the displacement of piezoceramics in PNN-PZN-PZT ceramics was 324$\times$10$^{-12}$ (C/V) at the vicinity of morphotropic phase boundary and was larger than that of solid PZT ceramics(120$\times$10$^{-12}$ C/V).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.28-28
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• 2007

Ferroelectric $(Ba_{0.5}Sr_{0.5})TiO_3$ (BST) thin films of thickness 500nm were deposited on $LaAlO_3$, (LAO) substrates by at $800^{\circ}C$. BST films were characterized for structure using X-ray diffraction (XRD). The surface morphology and thickness of BST the films were characterized by atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM). We measured the dielectric properties at microwave frequencies (1~3 GHz) using a symmetrical stripline resonator with shorted ends and terahertz frequencies (0.2~2.5 THz) using a time-domain terahertz spectroscopy. The real and imaginary parts of the complex dielectric constant of the BST thin films on LAO substrates were in agreement with those previously reported.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.91-92
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• 2007

An anomalous positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}Na_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The effect of $Nb_2O_5$ content on the electrical properties and the microstructure of (1 - x) $BaTiO_3-x\;(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) ceramics made using a conventional mixed oxide process also has been studied. The Curie temperature was obviously increased with the increasing of $(Bi_{0.5}Na_{0.5})TIO_3$ content. The Nb - doped BNT ceramics (x=0.01) display low resistivity values of $10^{1{\circ}}C-10^{2{\circ}}C$ ohm.cm at room temperature and the Curie Temperature of $T_c=160^{\circ}C$.