• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.51-54
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• 2003

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.276-277
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• 2006

1mm-thick BLT ceramics were sintered in accordance with a bulk ceramic fabrication process. AII XRD peaks detected in the sintered ceramics were indexed as the Bi-layered perovskite structure without secondary phases. Density was increased with increasing the sintering temperature up to $1050^{\circ}C$ and the maximum value was about 98% of the theoretical density. The remanent polarization (2Pr) value of BLT ceramic sintered at $1050^{\circ}C$ was approximately $6.5\;{\mu}C/cm^2$ at the applied voltage of 4.5 kV. The calculated electromechanical coupling factor ($k_t$) of it was about 5% and the mechanical quality factor (Qm) was about 2200. From these results, a BLT ceramic target for pulsed laser deposition (PLD) system was successfully fabricated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.803-806
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• 2011

1 mol% $Li_2O$ excess $0.9(Na_{0.52}K_{0.48})NbO_3-0.1LiTaO_3$ lead-free piezoelectric multilayer ceramic actuators were investigated to determine their aging properties. To reduce the thermal aging behavior, we applied a rectified unipolar electric field of 5 kV/mm to the specimen to accelerate the electric aging behavior. By employing a rectified unipolar electric field for the piezoelectric actuators, we could remove undesirable heating from the relaxation current in the motion of the ferroelectric domain. To accelerate the aging test, the applied electric fields had a frequency of 900 Hz. To have enough time for charging and discharging, we employed an accurate time constant to design the equivalent circuit model for the aging tester. To extract exact aging behavior, we measured the pseudo-piezoelectric coefficient before and after the aging process. We also measured the electro-mechanical coupling coefficient, the frequency-dependent dielectric permittivity, and the impedance to compare with fresh and aged specimen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.66-66
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• 2007

Lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for ferroelectric random access memory (FRAM) due to its higher remanant polarization and the ability to withstand higher coercive fields. We first applied the damascene process using chemical mechanical polishing (CMP) to fabricate the PZT thin film capacitor to solve the problems of plasma etching including low etching profile and ion charging. The $0.8{\times}0.8\;{\mu}m$ square patterns of silicon dioxide on Pt/Ti/$SiO_2$/Si substrate were coated by sol-gel method with the precursor solution of PZT. Damascene process by CMP was performed to pattern the PZT thin film with the vertical sidewall and no plasma damage. The polarization-voltage (P-V) characteristics of PZT capacitors and the current-voltage characteristics (I-V) were examined by change of process parameters. To examine the CMP induced damage to PZT capacitor, the domain structure of the polished PZT thin film was also investigated by piezoresponse force microscopy (PFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.656-658
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• 2004

Pb$(Zr_{0.8}Ti_{0.2})TiO_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70\sim90{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$t were approximately 676 and 1.4%, respectively. The remanent polarization and the coercive field of the PZT thick film sintered at $1050^{\circ}C$ were $21.15{\mu}C/cm^2$ and 10.1 kV/cm, mapetively

• Coupled systems mechanics
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• v.6 no.1
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• pp.29-40
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• 2017

This work employed density functional theory to investigate the structural and ferroelectric properties of the Ruddlesden-Popper (RP) phase of lead titanate, $Pb_2TiO_4$, as well as its phase transitions with epitaxial strain. A wealth of novel structural instabilities, which are absent in the host $PbTiO_3$ material, were identified in the RP phase through phonon soft-mode analysis. Our calculations showed that the ground state of $Pb_2TiO_4$ is antiferroelectric, distinct from the dominant ferroelectric phase in the corresponding host material. In addition, applied epitaxial strain was found to play a key role in the interactions among the instabilities. The induction of a sequence of antiferroelectric and antiferrodistortive (AFD) phase transitions by epitaxial strain was demonstrated, in which the ferroic instability and AFD distortion were cooperative rather than competitive, as is the case in the host $PbTiO_3$. The RP phase in conjunction with strain engineering thus represents a new approach to creating ferroic orders and modifying the interplay among structural instabilities in the same constituent materials, enabling us to tailor the functionality of perovskite oxides for novel device applications.

• Journal of Integrative Natural Science
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• v.7 no.3
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• pp.183-187
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• 2014

Lead zirconate titanate (PZT) is significant material in electrical and optical devices for their ferroelectric, piezoelectric and dielectric properties. In this research, PZT films were fabricated by reactive RF co-sputtering method using Pb, Zr, and Ti targets. From XPS study, lead, zirconium, and titanium are successfully deposited on Si(100) substrate. Thickness of PZT films was measured with a surface profiler and the thickness was decreased as the oxygen gas ratio increased in the sputter gas.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.496-503
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• 1994

In recent years Sol-Gel processing provides an interesting alternative method for the fabrication of ferroelectric thin layers and powder. PZT powder was prepared from an alkoxide-based solution by a Sol-Gel method. Gelation of synthesized complex solutions, microstructure, thermal analysis and crystallization behaviors of the calcined powder were studied in accordance with a water content and a catalyst. Especially gelation and crystallization behavior were analysed with the change of pH. The gelation time decreased as the pH of the mixed solution increased. For PZT powder with 650.deg. C heat treatment, 100% perovskite phase was formed by using either acidic or basic catalyst. By using either acidic or basic catalyst, we were able to get very fine powders of uniform shape with an average particle size of 0.8-1.mu.m.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.214-220
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• 2005

The ferroelectric properties of the $Pt/PZT(Pb(Zr,Ti)O_3)/Pt$ capacitors are severely degraded when they are annealed in hydrogen-containing environment. Hydrogen atoms created by the catalytic reaction of Pt top electrode during annealing in hydrogen ambient penetrate into PZT films and generate oxygen vacancies by the reduction of the PZT films, which is likely to cause the degradation. The degree of hydrogen-induced degradation and the direction of voltage shift in P-E curves of the pre-poled PZT capacitors after annealing in hydrogen ambient is dependent on the polarity of the pre-poling voltage. This implies that oxygen vacancies causing hydrogen induced degradation are generated by hydrogen ions having a polarity. The degraded ferroelectricity of the PZT capacitors can be effectively recovered by the shift of oxygen vacancies toward the Pt top electrode interface during post-annealing in oxygen environment with applying negative unipolar stressing.

• Transactions on Electrical and Electronic Materials
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• v.7 no.2
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• pp.72-75
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• 2006

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(Zr/Ti=60/40) paste was made and alternately screen-printed on the $Al_2O_3$ substrates. We have introduced a press-treatment to obtain a good densification of screen printed films. The porosity of the thick films was decreased with increasing the applied pressure and the thick films pressed at $0.6ton/cm^2$ showed the dense microstructure and thickness of about $76{\mu}m$. The relative dielectric constant increased with increasing the applied pressure. The remanent polarization and coercive field increased with increasing applied pressure and the values for the PZT thick films pressed at $0.6ton/cm^2$ were $16.6{\mu}C/cm^2$, 76.9 kV/cm, respectively.