• Title/Summary/Keyword: ferroelectric film

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Adaptive Learning Circuit For Applying Neural Network (뉴럴 네트워크의 적용을 위한 적응형 학습회로)

  • Lee, Kook-Pyo;Pyo, Chang-Soo;Koh, Si-Young
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.12 no.3
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    • pp.534-540
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    • 2008

  • The adaptive learning circuit is designed on the basis of modeling of MFSFET (Metal-Ferroelectric-Semiconductor FET) and the numerical results is analyzed. The output frequency of the adaptive learning circuit is inversely proportional to the source-drain resistance of MFSFET and the capacitance of the circuit. The saturated drain current with input pulse number is analogous to the ferroelectric polarization reversal. It indicates that the ferroelectric polarization plays an important role in the drain current control of MFSFET. The output frequency modulation of the adaptive learning circuit is investigated by analyzing the source-drain resistance of MFSFET as functions of input pulse numbers in the adaptive learning circuit and the dimensionality factor of the ferroelectric thin film. From the results, adaptive learning characteristics which means a gradual frequency change of output pulse with the progress of input pulse, are confirmed. Consequently it is shown that our circuit can be used effectively in the neuron synapses of neural networks.

  • https://doi.org/10.6109/jkiice.2008.12.3.534 인용 PDF KSCI

Dependence of Ferroelectric Film Formation Method on Electrical Characteristics in Solution-processed Ferroelectric Field Effect Transistor (강유전체 박막 형성방법에 따른 용액 공정 기반 강유전체 전계효과 트랜지스터의 전기적 특성 의존성)

  • Kim, Woo Young;Bae, Jin-Hyuk
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.7
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    • pp.102-108
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    • 2013

  • In manufacturing of solution-processed organic electronic devices, a spin coating method is frequently used, but which has a big problem. Solvent in a solution has a decisive effect such as physical and chemical damage for successive solution-based film deposition. Such a severe damage by solvent restricts for fabricating building blocks of multi-layered films from solutions. In this work, it will be shown that a proper combination of well-known solvents gives a chance to fabricate multi-layered film, also this new method was applied to make organic field effect transistor. Two types of bottom gate, bottom contact transistors were fabricated, one of which is fabricated by conventional single spin coating method, the other fabricated by double spin coating method. Compared with the electrical characteristics in a single spin coated transistor, the leakage current between source and gate electrode was decreased, ON state current was increased, and the extracted saturation mobility was multiplied more than 2.7 time for double spin coated transistors. It is suggested that the multiple coated gate dielectric structure is more desirable for high performance organic ferroelectric field effect transistors.

  • https://doi.org/10.5573/ieek.2013.50.7.102 인용 PDF KSCI