• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering(FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of $O_2$ gas and substrate temperature. When the $O_2$ gas rate of 0.3 and substrate temperature $200^{\circ}C$, ZnO:Al thin film had strongly oriented c-axis and lower resistivity( < $10^{-4}{\Omega}-cm$ ).

• 한국표면공학회지
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• 제40권3호
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• pp.144-148
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• 2007

To prepare the transparent electrode for electronic devices such as flat panel or flexible displays, solar cells, and touch panels; tin doped $In_2O_3$ (ITO) films with low resistivity and a high transparency were fabricated using a facing target sputtering (FTS) system at the various oxygen gas flow rate. The carrier concentration and mobility of ITO films were measured by Hall Effect measurement. And the transmittance was measured using the UV-VIS spectrometer. As a result, we can obtain the ITO thin films prepared at 10% oxygen gas flow ratio, thickness 150 nm with transmittance 85% and resistivity $8.1{\times}10^{-4}{\Omega}cm$ and surface roughness 5.01 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.439-440
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• 2008

Indium Zinc Tin Oxide (IZTO) thin films for transparent thin film transistor (TTFT) were deposited on glass substrate at room temperature by facing targets sputtering (FTS). The FTS system was designed to array two targets facing each other and forms the high- density plasma between. Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90wt.%, $SnO_2$ 10wt.%), the other is IZO($In_2O_3$ 90wt%, ZnO 10wt%). The conductive and optical properties of IZTO thin film is determined depending on variation of DC power and working pressure. Therefore, IZTO thin films were prepared with different DC power and working pressure. As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), a scanning electron microscopy (SEM), a Hall Effect measurement system. As a result, all IZTO thin films deposited on glass substrate showed over 80% of transmittance in visible range (400~800 nm) at $O_2$ gas flow rate. We could obtain IZTO thin films with the lowest resistivity $5.67\times10^{-4}$ [$\Omega{\cdot}cm$] at $O_2$ gas flow rate 0.4 [sccm).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.423-424
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• 2008

A facing target sputtering (FTS) equiment is fabricated and its process characteristics are investigated to search for the possibility of applications to film passivation system for organic light emitting diodes (OLEDs). We report that the FTS system can prepare a high quality $ZrO_2$ films with a dense micro structure and an excellent uniformity less than 5% and a high transmittance over an average 80% in the visible range. We suggest that the FTS is one of the suitable deposition techniques for the thin film passivation layer of OLEDs and the gas barrier layer of polymer substrate.

• 열처리공학회지
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• 제21권1호
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• pp.3-9
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• 2008

Al-Co-N thin films, Al-Co-N/Al-N and Al-Co-N/Al-Co multilayers containing various amounts of Co content were deposited by using a two-facing targets type dc sputtering (TFTS) system. The films were also annealed successively and isothermally at different annealing temperatures. Irrespective of Co content and preparation methods, all the as-deposited films were observed non-magnetized. It was found that annealing conditions can control the magnetic and electrical properties as well as the microstructure of the films.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.76-79
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• 2011

In order to improve efficiency and make a new material thin film, we prepared the Al-In-Sn-ZnO thin film on a glass substrate at room temperature using a Facing Target Sputtering (FTS) system. The FTS system was designed to array two targets that face each other. Two different kinds of targets were installed on the FTS system. We used an ITO ($In_2O_3$ 90wt%, $SnO_2$ 10wt%) target and an AZO (ZnO 98wt%, $Al_2O_3$ 2wt%) target. The AIZTO films were deposited using different applied powers to the targets. The as-deposited AIZTO thin films were investigated using a UV/VIS spectrometer, an X-ray diffratometer (XRD), and Energy Dispersive X-ray spectroscopy (EDX).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.231.1-231.1
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• 2015

Surface energy, being an important material parameter to control its interactions with the other surfaces plays a key role in bio-related application. Carbon films are found very promising due to their characteristics such as wear and corrosion resistant, high hardness, inert, low resistivity and biocompatibility. The present work deals with the deposition of carbon films using unbalanced facing target magnetron sputtering technique. The discharge characteristics were studied using optical emission spectroscopy and correlated with the film properties. Surface energy was investigated through contact angle measurement. The ID/IG ratio as calculated from Raman spectroscopy data increases with the increase in power density due to the higher number of sp2 clusters embedded in the amorphous matrix. The deposited films were smooth and homogeneous as observed by Atomic force microscopy having RMS roughness in the range of 1.74 to 2.25 nm. It is observed that electrical resistivity and surface energy varies in direct proportionality with operating pressure and has inverse relation with power density. The surface energy results clearly exhibited that these films can have promising applications in cell cultivation.

• 한국진공학회지
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• 제16권5호
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• pp.343-347
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• 2007

Glass disk상에 대향 타겟식 스퍼터링(Facing Target Sputtering) 방식을 이용하여 $0.1\;{\AA}/s$의 낮은 증착속도로 증착시킬 경우 b.c.c. (100)면 우선배향성을 확인하였으며, 그 위에 Pt박막을 증착시킨 경우 hetero-epitaxial 성장에 의해 Pt박막이(111)의 조밀면이 아닌 (100)면이 우선배향 되었다. 이렇게 형성된 Fe (100)/Pt (100) 이층막(두께 각 3 nm)을 $600\;^{\circ}C$ 수소분위기에서 열처리함에 의해 막전체에 걸쳐서 f.c.t. (00n)면을 형성시키는 데 성공하고, 또한 Fe (100)면 상에 Pt 박막을 증착시키는 동안 열처리를 하고 증착 이후 수소분위기에서 열처리함에 의해 열처리 시간 및 온도를 크게 낮출 수 있음을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.169-169
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• 2012

현재 디스플레이 시장은 LCD (Liquid Crystal Display), PDP (Plasma Display Panel) 등과 같이 평판 디스플레이가 주류를 이루고 있으며 현재에는 기존의 디스플레이와는 달리 잘 휘어지고 높은 투과성을 가지는 플렉시블 디스플레이에 대한 연구가 활발히 진행 중이다. 하지만 이러한 플렉시블 디스플레이에 사용되는 플라스틱 기판의 경우 용제에 대한 화학적 저항성 및 기계적인 안정성이 취약한 점과 대기중의 수분이나 산소가 플라스틱 기판을 통하여 소자내로 침투하게 되어 금속전극을 산화시키거나 기포 또는 흑점 등과 같은 비 발광 영역이 확산되어 소자의 수명을 단축시키는 치명적인 단점을 가진다. 이에 본 실험에서는 고밀도 플라즈마 형성이 가능하고 저온공정이 가능한 FTS (Facing Target Sputtering) 장비를 이용하여 Polyethylene terephthalate (PET) 기판위에 낮은 수분 투과율 또는 산소 투과율을 갖는 양질의 무기 산화막을 적층하기 위해 저 투습도 및 기계적인 경도 향상을 위한 비 반응성 박막으로 $Al_20_3$층을 Ar분위기에서 증착하였고 그 위에 박막의 stress 감소, 유연성 향상을 위한 반응성 박막으로 Al을 Ar과 $O_2$를 비율별로 증착하여 비교 실험하였다. 이와 같이 제작된 무기산화막들을 Uv- spectrophotometer를 이용하여 광학적 특성을 조사한 결과 가시광 영역에서 모두 80% 이상의 높은 투과율을 나타내었으며, 그 외 XRD (X-ray Diffraction)를 사용하여 결정성을 확인, SEM (Scanning Electron Microscope), AFM (Atomic Force Microscope)을 이용하여 박막의 구조와 표면향상 및 표면조도를 측정한 결과 모든 박막에서 밀집도가 좋으며 거칠기가 작은 것으로 확인되었다. 마지막으로 수분 투과율(WVTR)을 알아보기 위해 Mocon (Permatran W3/31)장비를 이용하여 측정한 결과 $1.0{\sim}3.0{\times}10^{-3}g/m{\cdot}day$의 낮은 수분 투과율을 볼 수 있었다. 이러한 측정 결과로 볼 때 향후 FTS 장비를 이용하여 양질의 플라즈마를 형성하여 알루미늄 무기산화막을 이용한 고밀도 다층막을 형성하면 더욱 낮은 수분투과율을 갖는 가스차단막을 제작할 수 있을 것으로 보여지며 반도체 소자 및 디바이스의 Pachaging으로도 사용가능 할 것이라 사료된다. 본 연구는 한국산업기술진흥원에서 지원하는 2011년도 지역산업기술개발사업의 연구수행으로 인한 결과물임을 밝힙니다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.228-230
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• 1994

A Spotter ion Plating(SIP) system with a r. f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The discharge voltage-discharge characteristics curves of a FTS source could be characterized by the fern of $I{\propto}V^n$ with n in the range of $8{\sim}12$. The energy of ions incident on the substrate depended on the sheath potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of $30{\sim}50N$, and markedly influenced by substrate bias voltage.