• Journal of the Korean Ceramic Society
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• v.30 no.7
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• pp.543-548
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• 1993

Stability and formation of Pb(Mg1/3Nb2/3)O3 (PMN) phase synthesized in Li2SO4-Na2SO4 molten salts have been investigated. And powder characteristics of PMN have been studied with a variation of processing parameters such as temperature, time, amount of the salts, and excess PbO. More ratio of Li2SO4 to Na2SO4 influences the percentage of perovskite phase due to the difference of the eutectic point of the salts, but does not influence the powder characteristics. The shape of PMN particles shows faceted morphology with bimodal distribution consisting with large and submicron parts. Particle size of PMN increased greatly with increasing soaking time or amount of salts rather than temperature. The addition of excess PbO resulted in round PMN crystallites without submicron particles. These results are discussed by XRD, SEM and thermal analyses.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.502-507
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• 2001

The effect of solidification rate on the microstructure of directionally solidified IN792+ Hf superalloy has been studied. Solidification sequence and precipitation behavior of the alloy have been analysed by microstructural observation. The script carbide transformed to faceted carbide with decreasing solidification rates. The incorporation of ${\gamma}$ phase into the faceted carbide was due to dendritic growth of carbides. Some elongated carbide bars formed along the grain boundaries at a solidification rate of 0.5$\mu\textrm{m}$/s. Two zones, ${\gamma}$' forming elements enriched zone and depleted zone, were found in the residual liquid area. Eutectic ${\gamma}$/${\gamma}$' nucleated in the f forming elements enriched zone. Formation of eutectic ${\gamma}$/${\gamma}$' increased the ratio of (Ti+Hf+Ta+W)/Al and induced η phase precipitation. The ratio of (Ti+Hf+Ta+W)/Al decreased at lower solidification rates due to sufficient back diffusion in the residual liquid area. Hence, the Precipitation of the η Phase efficiently suppressed at the lower solidification rate.

• Journal of Powder Materials
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• v.29 no.2
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• pp.110-117
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• 2022

The grain growth behavior in the (1-x)K_0.5Na_0.5NbO₃-xCaZrO₃ (KNNCZ-x) system is studied as a function of the amount of CZ and grain shape. The (1-x)K_0.5Na_0.5NbO₃-xCaZrO₃ (KNNCZ-x) powders are synthesized using a conventional solid-state reaction method. A single orthorhombic phase is observed at x = 0 - 0.03. However, rhombohedral and orthorhombic phases are observed at x = 0.05. The grain growth behavior changes from abnormal grain growth to the suppression of grain growth as the amount of CaZrO₃ (CZ) increases. With increasing CZ content, grains become more faceted, and the step-free energy increases. Therefore, the critical growth driving force increases. The grain size distribution broadens with increasing sintering time in KNNCZ-0.05. As a result, some large grains with a driving force larger than the critical driving force for growth exhibit abnormal grain growth behavior during sintering. Therefore, CZ changes the grain growth behavior and microstructure of KNN. Grain growth at the faceted interface of the KNNCZ system occurs via two-dimensional nucleation and growth.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.132-132
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• 2002

Diamond is well known as the hardest material in nature. It also has other unique bulk physical and mechanical properties, such as very high thermal conductivity and broad optical transparency, which enable a number of new applications now that large areas of diamond can be fabricated by the new diamond plasma chemical vapor deposition (CVD) technologies. A study on the effects of growth kinetics and properties of diamond films obtained by addition of argon (~7 vol. %) into the methane/hydrogen mixture is carried out using HFCVD system. A negative bias was used as a nucleation enhancement method in addition to the argon dilution. The scanning electron microscopy (SEM) image of surface morphology shows well faceted crystallites with a predominance of angular shapes corresponding to <100> and <110> crystalline surfaces. The nucleation density and growth rate with argon dilution is two orders of magnitude higher than without argon deposition. The Raman spectra show a good quality film whereas XPS spectra show existence of only diamond phase.

• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.257-264
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• 1994

The objectives of this study were to develop the low pressure chemical vapor deposition(LPCVD) process of SiC and to fabricate pure and dense SiC layer onto graphite substrate at low temperature. The deposition experiments were performed using the MTS-H2 system (30 torr) in the deposition temperature ranging from 100$0^{\circ}C$ to 120$0^{\circ}C$. The deposition rate of SiC was increased with the temperature. The rate controlling step can be classified from calculated results of the apparent thermal activation energy as follows; surface reaction below 110$0^{\circ}C$ and gas phase diffusion through a stagnant layer over 110$0^{\circ}C$. The deposited layer was $\beta$-SiC with a preferred orientation of (111) and the strongly faceted SiC deposits were observed over 115$0^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.786-788
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• 1998

Synthetic diamond films were deposited on pretreated silicon substrate in activated gas phase using RF plasma-assisted CVD. We investigated the influence of $O_2$ gas on facets of diamond crystal. In $H_2-CH_4-O_2$ gas mixture, the increase of oxygen concentration lead to well-faceted diamond particles and increasing crystallinity of diamond films. The deposited diamond films were analyzed by SEM, XRD, Raman spectroscopy.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.68-71
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• 2003

The reaction of ultra-small eutectic 58Bl-42Sn solder bump with Au/Ni/Ti and Au/Cu/Ti UBMs during reflow was studied. The eutectic Bi-Sn solder bumps of $46{\mu}m$ diameter were fabricated by using the evaporation method and were reflowed using the rapid thermal annealing system. The intermetallic compound was characterized using a SEM, an EDS, and an XRD. The $(Cu_xAu_{1-x})_6Sn_5$ compounds formed at the interface between Bi-Sn solder and Au/Cu/Ti UBM. On the other hand, in the Bi-Sn solder bump on Au/Ni/Ti UBM, the faceted and rectangular intermetallic compounds were observed on the solder bump surface and inside the solder bump as well as at the UBM interface. These intermetallic compounds were Identified as $(Au_{l-x-y}Bi_xNi_y)Sn_2$ phase.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.550-558
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• 1989

Polycrystalline diamond films have been deposited on Si wafer Ly hot W filament CVD method using CH4H2 mixtures. The effects of surface pretreatment, W filament temperature, CH4 volume fraction, and addition of water vapor on the growth rate and morphology of the films were investigated. Surface pretretment was essential for depositing a continuous diamond film. Raising the filament temperature resulted in an increased growth rate and a better crystal quality of the film. As the methane content is varied from 0.5% to 5%, well-faceted crystals gradually transformed into spherical particles of non-diamond phase with a simultaneous increase in the growth rate. Addition of water vapor markedly improved the crystallinity to produce crystalline particles even with 5% methane mixture.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.141-147
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• 2003

Silicon carbide thin film was deposited in APCVD and LPCVD system with 1,3-DSB precursor 1,3-DSB is the single precursor to deposit SiC on Si at low temperature. SiC film was deposited at $850^{\circ}C$ lower than ordinary temperature ($1000~1200^{\circ}C$) in CVD process. SiC thin film glowed to high oriented (111) plane in APCVD system. In LPCVD system, SiC film groved to preferred (220) plane at same temperature. This discrepancy between preferred planes can be described by the difference of deposition mechanism. Amorphous phase and crystal defect were observed in APCVD system with the main growth mechanism of mass transport limited region. But in LPCVD system, we got the SIC film of uniform, faceted structure and high quality.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.7
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• pp.387-394
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• 2004

Diamond films were deposited on the cemented tungsten carbide WC-Co cutting insert substrates by using both microwave plasma chemical vapor deposition(MWPCVD) and radio frequency plasma chemical vapor deposition (RFPCVD) from $CH_4$$-H_2$$-O_2$ gas mixture. Scanning electron microscopy and X-ray diffraction techniques were used to investigate the microstructure and phase analysis of the materials and Raman spectrometry was used to characterize the quality of the diamond coating. Diamond films deposited using MWPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show a dense, uniform, well faceted and polycrystalline morphology. The compressive stress in the diamond film was estimated to be (1.0∼3.6)$\pm$0.9 GPa. Diamond films which were deposited on the WC-Co cutting insert substrates by RFPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show relatively good adhesion, very uniform, dense and polycrystalline morphology.