• Title/Summary/Keyword: fabrication and assembly lines

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Self-assembly of Si-containing block copolymers for next-generation nanofabrication

  • Jeong, Yeon-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.22-23
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    • 2011
  • As device dimensions shrink, it is increasingly important to develop fabrication methods that can create sub-15 nm features of regular or arbitrary geometry in a rapid, parallel, and efficient process. This talk will discuss approaches based on self-assembling hybrid polymers containing Si. The thin films of those materials systems can generate well-ordered periodic arrays of dots or lines. For achieving, long-range ordering, it is helpful to use lithographically-defined templates, which are in general much larger than the length-scale of self-assembled nanostructures. For example, the self-assembly of polymer nanostructures can easily be templated using an array of nanoscale topographical elements that act as guiding templates or surrogates for one of two microdomains. The solvent-vapor-induced tunability of pattern dimension and morphology will be discussed as well. Those material systems can excellently serve for high-precision self-assembly that can provide good resolution, reliability, and controllability and be considered as an option for a future nanomanufacturing technology.

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Highly Tunable Block Copolymer Self-assembly for Nanopatterning

  • Jeong, Yeon-Sik;Jeong, Jae-Won
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.6.1-6.1
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    • 2011
  • Nanoscale block copolymer (BCP) patterns have been pursued for applications in sub-30 nm nanolithography. BCP self-assembly processing is scalable and low cost, and is well-suited for integration with existing semiconductor fabrication techniques. However, one of the major technical challenges for BCP self-assembly is limited tunability in pattern geometry, dimension, and functionality. We suggest methods for extending the degree of tunability by choosing highly incompatible polymer blocks and utilizing solvent vapor treatment techniques. Siloxane BCPs have been developed as self-assembling resists due to many advantages such as high etch-selectivity, good etch-resistance, long-range ordering, and reduced line-edge roughness. The large incompatibility leads to extensive degree of pattern tunability since the effective volume fraction can be easily manipulated by solvent-based treatment techniques. Thus, control of the microdomain size, periodicity, and morphology is possible by changing the vapor pressure and the mixing ratio of selective solvents. This allows a range of different pattern geometry such as dots, lines and holes and critical dimension simply by changing the processing conditions of a given block copolymer without changing a polymer chain length. We demonstrate highly extensive tunability (critical dimension ~6~30 nm) of self-assembled patterns prepared by a siloxane BCP with extreme incompatibility.

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3D Calibration Method on Large-Scale Hull Pieces Profile Measurement using Multi-Slit Beams (선박용 곡판형상의 실시간 측정을 위한 다중 슬릿빔 보정법)

  • Kim, ByoungChang;Lee, Se-Han
    • Journal of Institute of Control, Robotics and Systems
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    • v.19 no.11
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    • pp.968-973
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    • 2013
  • In the transportation industry, especially in the shipbuilding process, 3D surface measurement of large-scale hull pieces is needed for fabrication and assembly. We suggest an efficient method for checking the shape of curved plates under the forming operation with short time by measuring 3D profiles along the multi lines of the target surface. For accurate profile reconstruction, 2D camera calibration and 3D calibration using gauge blocks were performed. The evaluation test shows that the measurement accuracy is within the boundary of tolerance required in the shipbuilding process.

Copper Interconnection and Flip Chip Packaging Laboratory Activity for Microelectronics Manufacturing Engineers

  • Moon, Dae-Ho;Ha, Tae-Min;Kim, Boom-Soo;Han, Seung-Soo;Hong, Sang-Jeen
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.431-432
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    • 2012
  • In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

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Development of Vertical Separated Tubular Steel Pole (종방향 분할형 관형지지물 개발)

  • Lee, Won-kyo;Mun, Sung-Duk;Shin, Kooyong
    • KEPCO Journal on Electric Power and Energy
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    • v.5 no.4
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    • pp.257-262
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    • 2019
  • Lattice steel towers for overhead transmission lines have been replaced by tubular steel poles due to the visual impact of large and complex shape of truss type. Demand for tubular steel poles consisting of a single frame member continues to grow because of its advantages such as visual minimization, architectural appeal and minimal site consumptions. However, there are some constraints on the transportation and construction. As the diameter of tower base has been enlarged, it may exceed minimum height limit required to pass the tunnel in case of land transportation. Also, in a narrow place where it is not easy to secure the installation areas such as mountainous places, there might be some areas wherein it must secure a wide working space so that large vehicles and working cranes will be allowed to enter. In this paper, we presented a vertical separated tubular steel pole, which is a new type of support that can be implemented for general purpose such as mountainous areas or narrow areas to improve the issues raised by breaking away from the conventional design and fabrication methods. Technical approaches for overcoming the limit of the cross-sectional size is to separate and modularize the cross-section of the tubular steel pole designed with a size that cannot be carried or assembled, and to lighten it with a weight capable of being transported and assembled in a narrow space or mountainous area. As a result of this research, it will be possible to enter small and medium sized vehicles in locations where it is restricted to transport by large-sized vehicles. In the case of mountainous areas, it will be possible to divide it into a weight capable of being carried by a helicopter and it will be easy to adjust and fabricate it with individual modules. Furthermore, in order to break away from the traditional construction method, we proposed the equipment that can be applied to the assembly of Tubular Steel Pole without using a large crane in locations where there is no accessible road or in locations wherein large cranes cannot enter. In particular, this paper shows the movable assembling equipment and some methods that are specialized for vertical separated tubular steel pole consisting of members with reduced weight. The proposed assembly equipment is a device for assembling the body of the Tubular Steel Poles. It will be installed inside the support and the modules can be lifted by using the support itself.

Occupational Exposure of Semiconductor Workers to ELF Magnetic Fields (반도체 제조 근로자의 극저주파 자기장 노출 평가)

  • Chung, Eun Kyo;Kim, Kab Bae;Chung, Kwang Jae;Lee, In Seop;You, Ki Ho;Park, Jung-Sun
    • Journal of Korean Society of Occupational and Environmental Hygiene
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    • v.22 no.1
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    • pp.42-51
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    • 2012
  • Objectives: To compare the exposure level of extremely low frequency (ELF) magnetic fields among semiconductor workers, shipyard welders and office workers. Methods: To measure the ELF magnetic field concentration, EMDEX LITE (Enertech, USA) were used and monitored for eight hours continuously. Five companies handling the electric and magnetic field (EMF) source were investigated, which the exposure groups were classified into three groups: semiconductor workers, welders, and office workers. Welder group was chosen as a high exposed group and office group as a low exposed group. Results: The arithmetic mean (${\pm}SD$) and geometric mean (GSD) of personal exposure level of semiconductor workers were 0.73 (${\pm}1.33$) ${\mu}T$, 0.43 (2.88) ${\mu}T$, respectively. The ceiling value ranged between 0.18 and 123.2 ${\mu}T$. Welders were exposed high with the arithmetic mean value of 3.46 (${\pm}\;13.46$) ${\mu}T$ and geometric mean value of 0.45 (4.70) ${\mu}T$, respectively, and ceiling value range of 75.5~129.6 ${\mu}T$. The exposure levels of office workers were low compared to other exposed groups; the arithmetic mean 0.05 (${\pm}0.13$) ${\mu}T$, geometric mean 0.03 (2.38) ${\mu}T$ and ceiling value range 0.37~3.35 ${\mu}T$. This study revealed statistically significant differences of the mean ELF magnetic field exposure doses among three groups (p < 0.01). Conclusions: The average ELF magnetic field exposure doses of semiconductor workers were much higher than those of office workers in control group, but were lower than those of welders in high exposure group.

Design and Fabrication of Ka-Band Microstrip to Waveguide Transitions Using E-Plane Probes (E-평면 프로브를 이용한 Ka 대역 마이크로스트립-도파관 변환기의 설계 및 제작)

  • Shin, Im-Hyu;Kim, Choul-Young;Lee, Man-Hee;Joo, Ji-Han;Lee, Sang-Joo;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.1
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    • pp.76-84
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    • 2012
  • In this paper, two kinds of E-plane microstrip-to-waveguide transitions are optimally designed and fabricated for combining output power from multiple small-power amplifiers in a WR-28 waveguide because conventional K connectors cause unnecessary insertion loss and adaptor loss. The transition design is based on target specifications such as a center frequency of 35 GHz, bandwidth of ${\pm}500MHz$, 0.1 dB insertion loss and 20 dB return loss. Performance variation caused by mechanical tolerance and assembly deviation is fully evaluated by three dimensional electromagnetic simulation. The fabricated back-to-back transitions with 16 mm and 26.57 mm interstage microstrip lines show insertion loss per transition of ~0.1 dB at 35 GHz and average 0.2 dB over full Ka band. Also the back-to-back transition shows return loss greater than 15 dB, which implies that the transition itself has return loss better than 20 dB.