• 대한기계학회논문집A
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• 제35권2호
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• pp.157-162
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• 2011

발전설비 및 자동차의 엔진에서 고온과 응력이 발생하므로 안전을 위하여 제품을 생산하기 전에 재료의 수명설계가 필요하다. 본 연구에서는 온도, 응력, 파단 시간으로 이루어진 무기력계수를 이용하여 수명설계를 수식화하였다. 통합수명식을 이용하여 SP-Creep 시험 데이터와 계산된 데이터를 비교하였다. SP-Creep 시험은 X20CrMoV121강의 파단시간을 획득하기 위하여 수행하였고 수명설계식을 통해 하중, 온도, 하중-온도가 작용하는 3가지 경우를 고려하였다. 첫째로, 무기력계수는 SP-Creep 시험에서 획득한 파단응력과 시간에 의해 계산하였다. 두 번째로, 온도 조건을 주어 수명을 예상하였다. 세 번째로, 부재는 피로와 크리프가 동시에 작용할 때 커플링 효과 때문에 더 열악한 상태에 놓이게 된다. 수명은 커플링 효과 때문에 현저하게 감소하는 것으로 나타났다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2021년도 추계학술대회
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• pp.376-378
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• 2021

세계기상기구가 발표한 2020년 글로벌 기후 보고서에 따르면, 2019년 지구의 평균 온도는 산업화 이전인 1850년에서 1900년사이에 측정된 온도보다 평균 1.1℃ 높게 측정되었다. 평균온도의 변화는 기온 상승이 식물 분포에 미치는 영향과 취약성 분석 논문의 따르면 평균온도의 상승시 식물의 분포되는 지역의 변화가 있다는 것을 알 수 있다. 본 논문에서는 이러한 환경 변화에 대응하기 위해, 아두이노와 센서를 사용하여 간헐흐름식 수경재배 스마트팜을 제작하고, PC와 어플리케이션을 통하여 제어하는 방법을 제안한다. 제작된 수경재배 스마트팜은 농장의 온습도, 양액의 ph농도, 조도, 수질의 정도를 파악하고, 양액의 양과 보충 필요 농도 확인, 조도의 따른 생장 LED 제어, 센서의 상태를 파악하여 농장의 전체적인 관리와, 식물의 모종 옮겨심기 이후의 적절한 환경에서 성장할 수 있도록 제어한다.

• 접착 및 계면
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• 제25권2호
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• pp.43-49
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• 2024

최근 유연 유기 시냅스 트랜지스터(flexible organic synaptic transistor, FOST)는 유기 반도체를 채널층으로 하여 유연성, 생체 적합성, 손쉬운 공정성, 복잡성 감소로 인해 주목받고 있다. 또한 기존의 무기 시냅스 소자에 비해 간단한 구조와 낮은 제조 비용으로 인간 뇌의 가소성을 모방할 수 있으므로 차세대 웨어러블 장치 및 소프트 로보틱스 기술에 적용이 가능하다. 유연 유기 시냅스 트랜지스터에서 유기 기판은 소자의 준비 온도에 민감하고 고온 처리 공정은 유기 기판의 열변형을 일으켜 고성능 소자를 제조하기 위해서는 저온용액 기반의 공정 기술이 필요하다. 본 총설에서는 저온 용액 기반 유연 유기 시냅스 트랜지스터 소자의 최신 공정 기술 연구 상황을 요약하고, 이에 따른 문제점과 해결해야 할 과제를 제시하고자 한다.

• 한국세라믹학회지
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• 제56권2호
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• pp.178-183
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• 2019

A process of fabricating the foamed glass that has closed pores with 8 ~ 580 ㎛ sizes without a blowing agent by sintering 10 ㎛ boron-free glass powder composed of CaO, MgO, SO₃, Al₂O₃-83 wt% SiO₂ at a molding pressure of 0 ~ 120 MPa and a sintering temperature of 750 ~ 1000℃ was investigated. To analyze the glass transition temperature of glass powder, thermogravimetric analysis-differential thermal analysis (TGA-DTA) method were used. The microstructure and pore size of foamed glass were examined using the optical microscopy and field emission scanning electron microscopy (FE-SEM). For the thermal diffusivity and color of the fabricated samples, a heat flow meter and ultraviolet-visible-near-infrared (UV-VIS-NIR)-colormetry were used, respectively. In the TGA-DTA result, the glass transition temperature of glass powder was confirmed to be 626℃. In the microstructure result, closed pores of 7 ~ 20 ㎛ were formed at 750 ~ 900℃, and they were not affected by the molding pressure and sintering temperature. However, at 1,000℃, when there was 0 MPa molding pressure, closed pores of 580 ㎛ were confirmed, and the pore size decreased as the molding pressure increased. Moreover, at a molding pressure of 30 MPa or higher, closed pores of approximately 400 ㎛ were formed. The porosity showed an increasing trend of smaller molding pressure and larger sintering temperature, and it was controllable in the range of 5.69 ~ 68.45%. In the thermal diffusivity result, there was no change according to the molding pressure, and, by increasing the sintering temperature, up to 0.115 W/m·K could be obtained. The Lab color index (CIE-Lab) results all showed a similar translucent white color regardless of molding pressure and sintering temperature. Therefore, based on the foamed glass without boron and blowing agent, it was confirmed that white foamed glass, which has closed pores of 8 ~ 580 ㎛ and a thermal diffusivity characteristic of 0.115 W/m·K, can be fabricated by changing the molding pressure and sintering temperature.

• 전기학회논문지
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• 제57권3호
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• pp.398-402
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• 2008

Recently, the development of superconducting fault current limiters (SFCLs) has been required as power demands increase in the power system. A distribution-level prototype resistive SFCL using coated conductor (CC) has been developed by Hyundai Heavy Industries Co., Ltd. and Yonsei University for the first time in the world. The ratings of the SFCL are 13.2kV/630A at normal operating condition. A novel non-inductive winding method is used in fabricating coils so there is almost zero impedance during normal operation. The distribution SFCL is cooled by sub-cooled liquid nitrogen $(LN_2)$ of 65K and 3 bar to enhance cryo-dielectric performance, critical current density, and thermal conductivity. In order to make reliable operation of an SFCL in real power systems, we monitored and controled its operation conditions by using supervisory control and data acquisition (SCADA) method. Thus, a monitoring system for the SFCL employing information technology (IT) is proposed and developed to be on the lookout for the operation conditions such as inside temperature, inside pressure, $LN_2$ level, voltage and current. Since operation temperature should be kept constant, bang-bang control for temperature feedback with a heater attached to the cold head of cryo-cooler is applied to the system. Short-circuit tests with prospective fault current of 10kA and AC dielectric withstand voltage tests up to 143kV for 1 minute were successfully performed at Korea Electrotechnology Research Institute. This paper deals with the development of a distribution level SFCL and its monitoring system for reliable operation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.647-650
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• 2006

Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.211-215
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• 2010

Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, $Bi_2O_3$-MgO-ZnO-$Nb_2O_5$ (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than $400^{\circ}C$ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above $500^{\circ}C$. From AFM, it was known that the thin film grown at $400^{\circ}C$ is the densest. Dielectric constant increased with increasing temperature up to $400^{\circ}C$ at 100 kHz and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at $400^{\circ}C$ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 kHz.

• Current Photovoltaic Research
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• 제6권1호
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• pp.21-26
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• 2018

Beside several advantages, the PV power generation as a clean energy source, is still below the supply level due to high power generation cost. Therefore, the interest in fabricating low-cost thin film solar cells is increasing continuously. $Cu_2O$, a low cost photovoltaic material, has a wide direct band gap of ~2.1 eV has along with the high theoretical energy conversion efficiency of about 20%. On the other hand, it has other benefits such as earth-abundance, low cost, non-toxic, high carrier mobility ($100cm^2/Vs$). In spite of these various advantages, the efficiency of $Cu_2O$ based solar cells is still significantly lower than the theoretical limit as reported in several literatures. One of the reasons behind the low efficiency of $Cu_2O$ solar cells can be the formation of CuO layer due to atmospheric surface oxidation of $Cu_2O$ absorber layer. In this work, atomic layer deposition method was used to remove the CuO layer that formed on $Cu_2O$ surface. First, $Cu_2O$ absorber layer was deposited by electrodeposition. On top of it buffer (ZnO) and TCO (AZO) layers were deposited by atomic layer deposition and rf-magnetron sputtering respectively. We fabricated the cells with a change in the deposition temperature of buffer layer ranging between $80^{\circ}C$ to $140^{\circ}C$. Finally, we compared the performance of fabricated solar cells, and studied the influence of buffer layer deposition temperature on $Cu_2O$ based solar cells by J-V and XPS measurements.

• 한국재료학회지
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• 제15권9호
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• pp.589-593
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• 2005

Nanoimprinting lithography (NIL) is known as a suitable technique for fabricating nano and micro structures of high definition. Hot embossing is one of NIL techniques and can imprint on thin films and bulk polymers. Key issues of hot embossing are time and expense needed to produce a stamp withstanding a high temperature and pressure. Fabrication of a metal stamp such as an electroplated nickel is cost intensive and time consuming. A ceramic stamp made by silicon is easy to break when the pressure is applied. In this paper, a plastic stamp using a high temperature epoxy was fabricated and tested. The plastic stamp was relatively inexpensive, rapid to produce and durable enough to withstanding multiple hot embossing cycles. The merits of low viscosity epoxy solutions were a fast degassing and a rapid filling the microstructures. The hot embossing process with plastic stamp was performed on PMMA substrates. The hot embossing was conducted at 12.6 bar, $120^{\circ}C$ and 10 minutes. An imprinted PMMA wafer was almost same value of the plastic stamp after 10 times embossing. Entire fabrication process from silicon master to plastic stamp was completed within 12 hours.

• 대한기계학회논문집B
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• 제38권12호
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• pp.983-990
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• 2014

본 연구에서는 등온 벽에서 가까이에 위치한 유동과 같이 온도 구배가 큰 곳에서 발생하는 전도오차를 줄이기 위해 새로운 열전대의 형상 설계 및 제작 방법을 제안하고자 한다. 전도오차를 줄이기 위하여 지름이 $79.9{\mu}m$인 열전대를 이용했으며, 아크 용접을 통해 제작된 상대적으로 접점이 큰 일반 열전대와 다른 butt-welded 열전대를 제작하기 위하여 용접용 5 축 장비가 고안됐다. 열전대의 단면을 맞닿게 하여 용접해 접합부위 크기를 최소화 했다. 온도 보정 실험을 통하여, 일반적인 형상의 열전대와 이 연구에서 제안하는 열전대의 온도 측정 결과가 동일함을 알 수 있었다. 접합부가 $79.9{\mu}m$ 지름을 가지는 butt-welded 열전대를 온도 경계층에 침투시켜서 전도에 의한 오차를 최소화하여 급격히 변하는 온도 경계층의 온도를 효과적으로 측정할 수 있게 되었다. 개발된 센서를 이용하여 선형 터빈 날개가 장착된 풍동에서 온도 경계층을 측정하였고, 측정된 결과를 Nusselt 수로 나타내었다.