• 제목/요약/키워드: fabricated

검색결과 20,008건 처리시간 0.038초

이중루프 PLL을 이용한 IMT-2000용 저위상잡음 주파수합성기의 설계 및 제작 (Design and Fabrication of Low Phase-Noise Frequency Synthesizer using Dual Loop PLL for IMT-2000)

  • 김광선;최현철
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 추계종합학술대회 논문집
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    • pp.163-166
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    • 1999
  • In this paper, frequency synthesizer that can be used in IMT-2000 was designed and fabricated using dual loop PLL(Phase Locked Loop). For improving phase noise characteristic Voltage Controlled Oscillator was fabricated using coaxial resonator and eliminated frequency divider using SPD as phase detector and increased open loop gain. Fabricated frequency synthesizer had 1.82㎓ center frequency, 160MHz tuning range and -119.73㏈c/Hz low phase noise characteristic.

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Organic Light Emitting Transistors for Flexible Displays

  • Kudo, Kazuhiro;Endoh, Hiroyuki;Watanabe, Yasuyuki
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.137-140
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    • 2005
  • Organic light emitting transistors (OLET) which are vertically combined with the organic static induction transistor (OSIT) and organic light emitting diode (OLED) are fabricated and the device characteristics are investigated. High luminance modulations by relatively low gate voltages are obtained. In order to realize the flexible electronic circuits and displays, we have fabricated OSIT on plastic substrates. The OSIT fabricated on plastic substrate show almost same characteristics comparing with those of nonflexible OSIT on glass substrate. The OLET described here is a suitable element for flexible sheet displays.

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영자왜 아몰퍼스 박막의 자기-임피던스 효과 (Magneto-Impedance Effect of Zeromagnetostrictive Amorphous Films)

  • 서강수;임재근;김대주;신용진
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 1997년도 한국재료학회 춘계학술발표회
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    • pp.38-38
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    • 1997
  • In the paper, we investigate the magneto-impedance(MI) effect of the Fe-Co-B Amorphous magnetic film, the amorphous magnetic film having near zero magnetostostriction is fabricated by using the sputtering methode, and then annealed in magnetic field. When the external magnetic field is directly applied to the fabricated film, the voltage amplitude between both side of the magnetic film varies about 22% at 10[MHz] and the impedance varies about 21% at 10[Oe]. Thus, we find that the fabricated magnetic film has the characteristics of high-quality sensor element.

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Study on the characteristic of high precision thin film resistor

  • Park Hyun Sik;Yu Yun Seop
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 학술대회지
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    • pp.628-635
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    • 2004
  • The characteristic of thin film resistor with low TCR( temperature coefficient of resistance ) and high precision are studied. The thin film resistor for 1/4W was fabricated and characteristic of these resistors was investigated. The fabricated device had the thickness of $2.48{\leqq}$ and the resistivity of $0.27{\omega}mm$. The electrical characteristic was evaluated by HP 4339B and 4284A instruments with HP l6339A. The profile of trimmed structure was also measured by non contact interferometer. The change of resistance and TCR increased with increasing roughness and resistance. To reduce the effect of stress annealing treatment was performed in the range of 563 to 623 K after trimming. The characteristic was improved after annealing. It is expected the fabricated device can be useful for high precision and low TCR. Fabricated thin film resistor has average deviation of resistance less than $0.35{\%}$ and TCR within 60.60ppm/K.

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A Photosensitive Glass Chip for DNA Purification of Nucleic Acid Probe Assay

  • Kim, Joon-Ho;Kim, Byung-Gyun;Yoon, Jun-Bo;Euisik Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권4호
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    • pp.232-238
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    • 2001
  • A new DNA purification chip is proposed and fabricated for the sample preparation of Nucleic Acid (NA) probe assay. The proposed DNA purification chip is fabricated using photosensitive glass substrate and polydimethylsiloxane (PDMS) cover fixture. We have successfully captured and eluted the DNA using the fabricated photosensitive glass chip. The fabricated DNA purification chip showed a binding capacity of $15ng/\textrm{cm}^2$and a minimum extractable input concentration of $100copies/200\muL$. The proposed DNA purification chip can be applied for low-cost, disposable sample preparation of NA probe assays.

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Fabrication of high brightness multi-lamp backlight system for a large size LCD panel inspection equipment

  • Chun, Young-Tea;Lim, Sung-Kyoo;Lee, Kwang-Kyu;Lee, Hwan-Woong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.787-790
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    • 2004
  • The large size and high brightness backlight system for LCD panel inspection equipment was designed, fabricated, and evaluated. The cold cathode fluorescent lamp (CCFL) instead of the hot cathode fluorescent lamp (HCFL) were used as the light source. The inverters for driving multi-lamp CCFL backlight systems were also designed and fabricated. The measured luminance of the fabricated CCFL backlight system was 20,000 cd/$m^2$ and the uniformity of the backlight was 85%. The fabricated backlight system was successfully applied to the LCD panel inspection equipment.

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A Study of the Quantitative Relationship of Charge-Density Changes and the Design Area of a Fabricated Solar Cell

  • Jeon, Kyeong-Nam;Kim, Seon-Hun;Kim, Hoy-Jin;Kim, In-Sung;Kim, Sang-Hyun
    • Transactions on Electrical and Electronic Materials
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    • 제12권5호
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    • pp.204-208
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    • 2011
  • In this paper, the design area of a fabricated solar cell has been analyzed with respect to its charge density. The mathematical calculation used for charge-density derivation was obtained from the 2001 version of a MATHCAD program. The parameter range for the calculations was ${\pm}1{\times}10^{17}cm^{-3}$, which is in the normal parameter range for n-type doping impurities ($7.0{\times}10^{17}cm^{-3}$) and also for p-type impurities ($4.0{\times}10^{17}cm^{-3}$). Therefore, it can be said that the fabricated solar-cell design area has a direct effect on charge-density changes.

기계적합금화 공정에 의해 제조된 PbTe 소결체의 열전특성 (Thermoelectric Properties of PbTe Sintered Body Fabricated by Mechanical Alloying Process)

  • 이길근;정해용;이병우
    • 한국분말재료학회지
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    • 제8권2호
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    • pp.110-116
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    • 2001
  • Abstract To investigate the effect of mechanical alloying process to thermoelectric properties of PbTe sintered body, Pb-Te mixed powder with Pb : Te : 1 : 1 composition was mechanically alloyed using tumbler-ball mill. Thermoelectric properties of the sintered body were evaluated by measuring of the Seebeck coefficient and specific electric resistivity from the room temperature to 50$0^{\circ}C$. Sintered body of only mechanically alloyed PbTe powder showed p-type behavior at the room temperature, and occurred type transition from p-type to n-type at about 30$0^{\circ}C$. PbTe sintered body which was fabricated using heat treated powder in $H_2$ atmosphere after mechanical alloying showed stable n-type behavior under 50$0^{\circ}C$. N-type PbTe sintered body fabricated by mechanical alloying process had 4 times higher power factor than that fabricated by the melt-crushing process. Application of a mechanical alloying process to fabricate of n-type PbTe thermoelectric material seemed to be useful to increase the power factor of PbTe sintered body.

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블크 마이크로 머신용 미세구조물의 제작 (Fabrication of 3-dimensional microstructures for bulk micromachining)

  • 최성규;남효덕;정연식;류지구;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.741-744
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    • 2001
  • This paper described on the fabrication of microstructures by DRIE(Deep Reactive Ion Etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760 mm Hg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing(1000$^{\circ}C$, 60 min.), the SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated microstructures by DRIE as well as a accurate thickness control and a good flatness.

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평면형 마이크로 가스센서 (Planar-Type Micro Gas Sensor)

  • 이상윤;정완영;이덕동
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.101-104
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    • 1998
  • A new planar-type micro gas sensor was designed and fabricated on silicon substrate and the operating characteristics of the sensor were investigated. The thin sensitive film of the sensor was fabricated by spin-coating of the SnO$_2$ sol solution which was synthesized by hydrothermal method. The spin-coating method for preparation of sensing layer was adopted to improve the long-term stability of the fabricated sensing film instead of physical methods such as rf sputtering and thermal evaporation. The fabricated microsensor showed a fairly good sensing performance for CO gas in air at 250$^{\circ}C$ The sensitivity(S=Ra/Rg) was shown to be about 5 to 2000ppm CO with heating power of 50mW.

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