• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.316-319
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• 1996

In this study, characteristics of ultrasonic transducer fabricated with porous piezoelectric resonator are investigated, 3-D underwater object recognition using the self-made ultrasonic transducer and SOFM(Self-Organizing Feature Map) neural network are presented. The self-made transducer was satisfied the required condition of ultrasonic transducer in water, and the recognition rates for the training data and the testing data were 100 and 95.3% respectively. The experimental results have shown that the ultrasonic transducer fabricated with porous piezoelectric resonator could be applied for sonar system.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.144-150
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• 1995

Ceramic filter using energy trapping effect is used bandpass filter at high frequency. In this paper, the resonant points of the symmetrical modes and antisymmetrical modes were theoretically analyed and synthesized these modes in order to know the filter characteristics. We simulated them using the computer and also fabricated the ceramic filter using PZT-4 piezoelectric plate made by Valpey Fisher Co., The 1.5[.mu.m] - thick platinum electrode were deposited on the ceramic plates with the various masks. The characteristics of the fabricated filters were measured using the spectrum analyzer. Experimental data were compared with the theoretical results. The maximum-pass frequencies coinsided exactly. The bandwidths of the fabricated filters were slightly different between theoretical and experimental results. We found that these phenomenon were caused by the stray capacitance between the two neighbor electrodes..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1224-1231
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• 2003

This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50$\mu\textrm{m}$. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100${\times}$100$\mu\textrm{m}$$^2$.Q-factor was 996.68 and K$^2$$\_$eff/ was 3.91％.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.37-40
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• 2002

Superconductor wire fabricated by electrophoresis showed its critical current density depended on parameters such as applied voltage and deposition time. Substrate and suspension solutions. and its properties are also important parameters. When same optimal parameter and condition was used, deposition density of superconductor film affect directly its critical current density. In this study, therefore, electrophoretic deposition technique was utilized for a densification of YBCO superconducting wire, and researches on electrophoretic suspension solutions and additive were experimentally performed for an improvement of the critical current density of fabricated electrophoretically superconducting wire. The samples fabricated in the solution with the additive, 8 vol.% of 1% PEG(1000), showed the highest critical current density.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.87-90
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• 2005

$SiO_2$ via-hole etching with a high aspect ratio is a key process in fabricating ULSI devices; however, accumulated charge during plasma etching can cause etching stop, micro-loading effects, and charge build-up damage. To alleviate this concern, charge-up damage sensor was fabricated for the ultimate goal of real-time monitoring of accumulated charge. As an effort to reach the ultimate goal, fabricated sensor was used for electrical potential measurements of via holes between two poly-Si electrodes and roughly characterized under various plasma conditions using statistical design of experiment (DOE). The successful identification of potential difference under various plasma conditions not only supports the evidence of potential charge-up damage, but also leads the direction of future study.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.939-940
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• 2006

An integrated inductor using the low-temperature co-fired ceramics(LTCC ) technology for low-power electronics was fabricated. In the inductor NiZn ferrite sheet(${\mu}_r=230$), was embedded to increase inductance. The inductor has Ag spiral coil with 14 turns($7turns{\times}2layers$), a dimension of 0.6mm in width, 10um in thickness, and 0.15mm pitch. To evaluate the inductance, including the parasitic resistance, the fabricated inductor was calculated and measured. It was confirmed that calculated values were very close to the measured values. Finally as an application of the LTCC integrated inductor to low power electronic circuits, a LTCC buck DC/DC converter with 1W output power and up to 0.5MHz switching frequency using the inductor fabricated was develop.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.697-700
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• 2007

A novel 2-Dimensional Suppressed Sidewall Injection Magnetotransistor (SSIMT) with high linearity has been fabricated on the standard CMOS technology and experimentally verified. The novel 2-Dimensional SSIMT overcomes the restriction of the standard CMOS technology. Experimental results of the fabricated 2-Dimensional SSIMT show that the variation of each collector output currents are extremely linear as a function of magnetic field from -200mT to 200mT at $I_B = 1 mA,\;V_{CE} = 5 V\;and\;V_{SE} = 5 V$. The relative sensitivity shows up to 13 %/T. The measured nonlinearity of the fabricated device is about 0.9%.

• Proceedings of the KSR Conference
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• 2008.06a
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• pp.1067-1072
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• 2008

The objective of this project is to get the qualification for participation in any procurement conducted by NYCT by proving Hyundai-Rotem's capability of truck development according to NYCT Pre-Qualification program. The scope of the PQ program is to develop the new fabricated truck from NYCT's old-fashioned casting truck and to operate the new fabricated truck in normal NYCT passenger service during 1 year. In this paper, the characteristics of the new fabricated truck in terms of design, manufacture and tests criteria are mainly introduced comparing with the domestic and European-style trucks.

• Transactions of Materials Processing
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• v.11 no.7
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• pp.569-574
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• 2002

Recently, thick PZT films are required for the cases of micro piezoelectric devices with high driving force, high breakdown voltage and high sensitivity, and so on. In this work, thick PZT films were fabricated by Sol-Gel multi-coating method. Microstructures, and electrical properties of films were investigated by XRD, FESEM, impedance analyzer, and P-E hysteresis. PZT films with 2.7$mu extrm{m}$ to 4.4${\mu}{\textrm}{m}$ thickness were fabricated. Dielectric constant, loss, remnant polarization and coercive field of them were 880~1650 at 1kHz, 2~3% at 1kHz, 26~32 $\mu$C/$ extrm{cm}^2$, and 33~60kV/cm, respectively. Also a transverse piezoelectric coefficient $(e_{31,f})$ measurement system was fabricated and tested for thick film samples.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.116-119
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• 2016

In this study, we fabricated the $K^+$ ion source for the various purposes and investigated the emission characteristics. The fabricated $K^+$ ion source was painted in the tungsten filament to make filament type ion source. The RGA spectra show that the filament type $K^+$ ion source has a good out gassing character, so it can be used in the ultra-high vacuum system. The maximum $K^+$ ion current was 20 mA when filament temperature was 1410 K and filament potential was 50 V. When the filament temperature was 1070 K, the initial beam current was 50 mA and decreased only by 2% during 4 hours. The emitting energy was measured to be 2.04 eV. This low value means that the fabricated specimen is a good $K^+$ ion source. We conclude that this filament type ion source can be used in various fields, including the LEIS research.