• Electrical & Electronic Materials
• /
• v.9 no.8
• /
• pp.825-830
• /
• 1996

In this study, Characteristics of Ultrasonic Transducer fabricated with porous piezoelectric resonator, 3-D underwater object restoration using the self made ultrasonic transducer and modified SCL(Simple Competitive Learning) neural network are investigated. The self-made transducer was satisfied the required condition of ultrasonic transducer in water, and the modified SCL neural network using the acquired object data 16*16 low resolution image was used for object restoration of $32{\times}32$ high resolution image. The experimental results have shown that the ultrasonic transducer fabricated with porous piezoelectric resonator could be applied for SONAR system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.992-993
• /
• 2002

We have fabricated the diffractive optical head(DOH) for optical pick up, which one adaptable to a optical recoding information storage. DOH consists of a focusing grating coupler(FGC) and a solid immersion Jens(SIL). FGC is device that the light converge into a focus by surface lattice. FGC have been studied as a potential application of pick up head for the information storage. In this study, FGC was designed and fabricated to make focus near to possible diffraction limit. We also fabricated recording head combined with SIL. The focus was measured in the range of $1.1{\mu}m$ as near to possible diffraction limit in the FGC having a focusing length of $600{\mu}m$ and a lattice area of 500 * $500{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.384-385
• /
• 2006

We studied about conductive pastes of the source-drain contacts for OTFTs(organic thin-film transistors) fabricated by direct printing(screen printing) method. We used Ag and conductive carbon black powder as the conductive fillers of pastes. The conductive pastes were manufactured by various dispersing agents and dispersing conditions and source-drain contacts with $100{\mu}m$ of channel length were fabricated. We could obtain the OTFTs which exhibited different field-effect behaviors over a range of source-dram and gate voltages depending on a kind of conductive fillers used conductive pastes.

• Proceedings of the KIEE Conference
• /
• 1998.11c
• /
• pp.816-818
• /
• 1998

In this paper Polyimide(PI) thin film are fabricated by vapor deposition polymerization(VDP) of dry process which are easy to control the film's thickness and hard to pollute due to volatile solvent. The FT-IR spectrum show that PAA thin films fabricated by VDP are changed to PI thin film by thermal curing. From AFM(Atomic Force Microscopy) experimental as the higher curing temperature. the thin film thickness decreases and roughness decresse.

• 한국초전도학회:학술대회논문집
• /
• v.9
• /
• pp.43-47
• /
• 1999

Instead of using KrF excimer lasers( ${\lambda}$ = 248 nm) in depositing oxide thin films, as in the most of the laboratories in Korea, we have used an ArF excimer laser( ${\lambda}$ = 197 nm) which has a shorter wavelength. By using a beam which has a shorter wavelength, we could obtain higher quality and smoother surface YBCO thin films. We fabricated YBCO thin films with the various substrate temperature conditions and analyzed the characteristics of these films. We also studied the charateristics of the films fabricated under the various conditions of the power of laser and the oxygen pressure. The characterization tools used in this work were a transport measurement setup, an XRD , and a SEM. We also fabricated STO/YBCO multilayers to use in SFQ devices fabrication. XRD patterns of the multilayers showed that the multilayer films were grown epitaxially.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2006.10a
• /
• pp.10-13
• /
• 2006

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-Sic/SOI pressure sensor presents a high-sensitivity and excel lent temperature stability.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2006.10a
• /
• pp.198-201
• /
• 2006

In this paper, we fabricated drag force type and pressure difference type gas flow sensor with dry etching technology which used Deep RIE(reactive ion etching) and etching stop technology which used SOI(silicon-on-insulator). we fabricated four kinds of sensor, which are cantilever, paddle type, diaphragm, and diaphragm with orifice type. Both cantilever and paddle type flow sensors have similar sensitivity as 0.03mV/V kPa. Sensitivity of the fabricated diaphragm and diaphragm with orifice type sensor were relatively high as about 3.5mV/V kPa, 1.5mV/V kPa respectively.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.19.2-19.2
• /
• 2011

ZnO nanowires have been fabricated by vapor-liquid-solidification with hot-walled pulsed laser deposition method. The diameter of ZnO nanowire has been systematically controlled simply by changing the thickness of Au catalyst. Field effect transistors with different diameter have been fabricated by using photolithography and e-beam lithography. The threshold voltage of ZnO nanowire FET showed enhanced mode and depleted mode depending on the diameter of ZnO nanowires. This is mainly due to the change of the carrier concentration depending on the size of nanowires. We have fabricated ZnO nanowire inverters using nanowire FETs. This simple method to fabricate ZnO nano-inverter will be useful to open the possibility of ZnO nanoelectronic applications.

• Korean Journal of Materials Research
• /
• v.18 no.7
• /
• pp.357-361
• /
• 2008

Microstructure and mechanical properties of WC-3 wt% Co cemented carbides, fabricated by a spark plasma sintering (SPS) process, were investigated in this study. The WC-3 wt%Co powders were sintered at $900{\sim}1100^{\circ}C$ for 5min under 40MPa in high vacuum. The density and hardness were increased as the sintering temperature increased. WC-3 wt%Co compacts with a relative density of 97.1% were successfully fabricated at $1100^{\circ}C$. The fracture toughness and hardness of a compact sintered at $1100^{\circ}C$ were $21.6 MPa{\cdot}m^{1/2}$ and 4279 Hv, respectively.

• Transactions of Materials Processing
• /
• v.15 no.6 s.87
• /
• pp.436-440
• /
• 2006

A rapid tooling (RT) method fur the resin transfer molding (RTM) have been investigated. We fabricated a curved I-beam to verify the method. After creating a three-dimensional CAD model of the beam we fabricated a prototype of the model using a rapid prototyping (RP) machine. A soft mold was made using the prototype by the conventional silicone mold technique. The procedure and method of mold fabrication is described. The mold was cut into several parts to allow easier placement of the fiber preform. We conducted the resin transfer molding process and manufactured a composite beam with the mold. The preform was built by stacking up eight layers of delicately cut carbon fabrics. The fabrics were properly stitched to maintain the shape while placement. The manufactured composites beam was inspected and found well-impregnated. The fiber volume ratio of the fabricated beam was 16.85%.