• Journal of Astronomy and Space Sciences
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• 제37권1호
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• pp.29-34
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• 2020

On 21 August 2017, during 16:49 UT and 20:02 UT period, a total solar eclipse started. The totality shadow occurred over the United States in time between ~17:15 UT and ~18:47 UT. When the solar radiation is blocked by the moon, observations of the ionospheric parameters will be important in the space weather community. Fortunately, during this eclipse, two Swarm satellites (A and C) flied at about 445 km through lunar penumbra at local noon of United States in the upper ionosphere. In this work, we investigate the effect of the solar eclipse on electron density, slant total electron content (STEC) and electron temperature using data from Swarm mission over United States. We use calibrated measurements of plasma density and electron temperature. Our results indicate that: (1) the electron density and STEC have a significant depletion associated with the eclipse; which could be due to dominance of dissociative recombination over photoionization caused by the reduction of ionizing extreme ultraviolet (EUV) radiation during the eclipse time (2) the electron temperature decreases, compared with a reference day, by up to ~150 K; which could be due to the decrease in photoelectron heating from reduced photoionization.

• 천문학회보
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• 제42권2호
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• pp.61.2-61.2
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• 2017

We report a fine scale transient brightening event near a pore boundary with the Fast Imaging Solar Spectrograph (FISS) of the 1.6m Goode Solar Telescope (GST), the Atmospheric Imaging Assembly (AIA) aboard the Solar Dynamics Observatory (SDO), and Helioseismic and Magnetic Imager (HMI) aboard SDO. The event appears in all AIA extreme ultraviolet bands, also in the two FISS lines, $H{\alpha}$ and Ca II $8542{\AA}$, and lasted for a minute. The brightening occurred at a footpoint of a loop. The conjugate brightening occurred at the other foot point outside the FISS field of view. The brightening near the pore exhibit a redshift of 4.3 km s-1 in the $H{\alpha}$ and about 2.3 km s-1 in Ca II line. Differential emission measure derived from 6 AIA EUV passbands and cloud model fitting of the two FISS lines indicate the temperature increase of between 10,000 and 20 MK at the main event. After the brightening, the upward mass motion appears in the AIA images. We discuss the physical implication of this brightening in the context of magnetic reconnection and coronal heating.

• 천문학논총
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• 제20권1호
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• pp.11-20
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• 2005

We present measurements of interstellar $H_2$ absorption lines in the continuum spectra of 54 early-type stars in the Galactic disk and halo and 3 stars in the Magellanic Clouds. The data were obtained with the Berkeley Extreme and Far-Ultraviolet Spectrometer (BEFS), part of the ORFEUS telescope, which flew on the ORFEUS-SPAS I and II space-shuttle missions in 1993 and 1996, respectively. The spectra extend from the interstellar cutoff at $912{\AA}$ to about $1200{\AA}$ with a spectral resolution of ${\sim}3000$ and statistical signal-to-noise ratios between 10 and 65. Assuming a velocity profile derived from optical observations (when available), we model the column densities N(J) of the rotational levels J = 0 through 5 for each line of sight. Our data reproduce the relationships among molecular and total hydrogen column density, fractional molecular abundance, and reddening first seen in Copernicusobservations of nearby stars (Savage et al. 1977). The results show that most of these molecular clouds have $H_2$ total column densities between $10^{15}cm^{-2}$ and $10^{21}cm^{-2}$, and kinetic temperatures from 21 K to 232 K, with average of 89 K, consistent with the result of Copernicus (Savage et al. 1977).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• 천문학회지
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• 제29권2호
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• pp.207-215
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• 1996

To derive coronal temperature, electron density and nonthermal velocity, we have analyzed high resolution spectra (e.g., Fe XII 338.3, Fe XII 352.1, Fe XIV 334.2, Fe XIV 353.8, Fe XV 284.2, Fe XV 321.8, Fe XV 327.0, Fe XVI 335.4, and Fe XVI 360.8) taken from AR 6615 by SERTS (Solar Extreme Ultraviolet Rocket Telescope and Spectrograph). Important findings emerging from the present study are as follows: (1) Temperature estimated from Fe XVI 335.4 and Fe XIV, 334.2 is $\~2.4\times10^6 K$ and no systematic difference in temperature is found between the active region and its adjacent quiet region; (2) Mean electron density estimated from Fe XV is $\~3\times10^9 cm^{-3}\;and\;\~10^{10} cm^{-3}$ from Fe XII and Fe XIV; (3) Mean density of the active region is found to be higher than that of the quiet region by a factor of 2; (4) Nonthermal velocity estimated from Fe XV and Fe XVI is $20\times25 km\;s^{-l}$ which decreases with increasing ionization temperatures. This supports the notion that the nonthermal velocity declines outwards above the transition region.

• 천문학회지
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• 제39권3호
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• pp.73-80
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• 2006

We analyze the extinction law towards several B1V stars-members of our Galaxy, searching for possible discrepancies from the galactic average extinction curve. Our photometric data allow to build extinction curves in a very broad range: from extreme UV till infrared. Two-colour diagrams, based on the collected photometric data from the ANS UV satellite, published UBV measurements and on the infrared 2MASS data of the selected stars, are constructed. Slopes of the fitted straight lines are used to build the average extinction curve and to search for discrepant objects. The selected stars have also been observed spectroscopically from the Terskol and ESO Observatories; these spectra allow to check their Sp/L's. The spectra of only about 30% of the initially selected objects resemble closely that of HD144470, considered as the standard of B1 V type. Other spectra either show some emission features or belong clearly to another spectral types. They are not used to build the extinction curve. Two-colour diagrams, constructed for the selected B1 V stars, showing no emission stellar features, prove that the interstellar extinction law is homogeneous in the Galaxy. Both the shape of the curve and the total-to-selective extinction ratio do not differ from the galactic average and the canonical value(3.1) respectively. The circumstellar emissions usually cause some discrepancies from the average interstellar extinction law; the discrepancies observed in the extraterrestrial ultraviolet, usually follow some misclassifications.

• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.13-18
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• 2010

Extreme ultraviolet (EUV) lithography using 13.5 nm wavelengths is expected to be adopted as a mass production technology for 32 nm half pitch and below. One of the new issues introduced by EUV lithography is the shadowing effect. Mask shadowing is a unique phenomenon caused by using mirror-based mask with an oblique incident angle of light. This results in a horizontal-vertical (H-V) biasing effect and ellipticity in the contact hole pattern. To minimize the shadowing effect, a refilled mask is an available option. The concept of refilled mask structure can be implemented by partial etching into the multilayer and then refilling the trench with an absorber material. The simulations were carried out to confirm the possibility of application of refilled mask in 32 nm line-and-space pattern under the condition of preproduction tool. The effect of sidewall angle in refilled mask is evaluated on image contrast and critical dimension (CD) on the wafer. We also simulated the effect of refilled absorber thickness on aerial image, H-V CD bias, and overlapping process window. Finally, we concluded that the refilled absorber thickness for minimizing shadowing effect should be thinner than etched depth.

• 반도체디스플레이기술학회지
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• 제15권3호
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• pp.35-39
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• 2016

Extreme Ultraviolet Lithography (EUVL) is the most promising technique in the field of Next Generation Lithography (NGL) expected to be used in the 1x-nm node for High Volume Manufacturing (HVM). But there exits remaining challenges for proper defect control of EUV mask. It was considered development of EUV pellicle for protecting the EUV mask has many obstacles due to high extinction coefficient of EUV wavelength. Recently researchers in the industry of semiconductor argue about the necessity of EUV pellicle and make effort to achieve it. In this paper, we investigated that the relationship between imaging performance and transmittance of EUV pellicle quantitatively. We made in-house EUV pellicle and analyzed its imaging performance of the dependence of pellicle transmittance using Coherent Scattering Microscopy(CSM). The imaging performance of EUV mask with pellicle is affected by its transmittance and we found that the performance of EUV mask improved with higher transmittance pellicle.

• 반도체디스플레이기술학회지
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• 제15권1호
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• pp.22-26
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• 2016

Extreme ultraviolet (EUV) pellicle is one of the most concerned research in the field of EUV lithography (EUVL). Imaging performance of EUV mask with pellicle should be investigated prior to high volume manufacturing (HVM) of EUVL. In this paper, we analyzed the relationship between standoff distance and imaging performance of EUV mask to verify the influences of relative standoff distance on imaging performance. As a result, standoff distance of EUV pellicle has no effect on imaging performance of EUV mask such as critical dimension (CD), normalized image log slope (NILS) and image contrast. Therefore, pellicle support structure can be flexibly designed and modified in diverse ways to complement the thermal limitation of EUV pellicle membrane.

• 반도체디스플레이기술학회지
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• 제15권1호
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• pp.6-11
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• 2016

For high volume manufacturing using extreme ultraviolet (EUV) lithography, mask protection from contamination during lithography process must be solved, and EUV pellicle is the strongest solution. Based on the technical requirements of EUV pellicle, EUV pellicle should have large membrane area ($110{\times}140mm^2$) with film transmittance over 90% and mechanical stability. Even though pellicle that satisfies size standard with high transmittance has been reported, its mechanical stability has not been confirmed, nor is there a standard to evaluate the mechanical stability. In this study, we suggest a rather simple method evaluating mechanical stability of pellicle membrane using spin-coater which can emulate the linear accelerated motion. The test conditions were designed by simulating the acceleration distribution inside pellicle membrane through correlating the linear acceleration and centripetal acceleration, which occurs during linear movement and rotation movement, respectively. By these simulation results, we confirmed the possibility of using spin-coater to evaluate the mechanical stability of EUV pellicle.