• The Korean Journal of Applied Statistics
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• v.8 no.1
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• pp.89-104
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• 1995

This paper is concerned with the method of estimating lifetime distributin from field data for products with multiple modes of failure. When product failures occur within warranty period, a manufacturer can obtain failure-record data; failure times, causes of failure, and covariates. Since these data are seriously incomplete for satisfactory inference, that is, only failures occured during warrantly period may be recorded, it is usually necessary to incoporate the failure-record data by taking a supplementary sample of items obtained following up a portion of products that survive warranty time. The log linear function is considered as a model for describing the relation between failure time of a product and covariates. General methods for obtaining pseudo maximum likelihood estimators(PMLEs) for the parameters are outlined and their asymptotic properties are studied, and specific formulas for exponential or Weibull distribution are obtained. Effects of follow-up percentage on the PMLEs are investigated. Extensions to calendar time warranty or calendar and obtaining time warranty are also considered.

• The Korean Journal of Applied Statistics
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• v.27 no.7
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• pp.1097-1114
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• 2014

Multiple-life policies pay a benefit on the first death or the last death among the group of lives. In practice, the future lifetime random variable of policy holders has been considered to be independent, but it is more rational to take into account the correlations among the policy holders. In this paper, the Gaussian copula is applied to re ect the correlations among policy holders and then to diversify the common shock of the multiple life policies which follows an exponential distribution. Five case studies demonstrate its usefulness of using copula in calculating the premiums of the multiple-life policies including the common shock.

• 전기의세계
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• v.28 no.4
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.