• 통합자연과학논문집
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• 제2권4호
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• pp.265-269
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• 2009

The photoluminescence was measured in GaAs-AlGaAs double-quantum-well structure at high magnetic field. Although the phototransition characteristics displayed a free-particle transition at low magnetic field, the change of free-particle transition into bound-exciton transition was observed at high magnetic field (above 10 T). A charged exciton formation due to charge-unbalanced electron-hole was identified by using a spin-polarized photoluminescence method. An increase of exciton formation due to the localization of free-particle at magnetic field was observed according to the increase of magnetic field.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1070-1073
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• 2004

In this study, Tri(1-phenylpyrazolato)iridium $(Ir(ppz)_3)$ was prepared for the pure blue phosphorescent dopant and various host materials were used for the appropriate energy alignment. Although the luminance was pure blue with the CIE coordinates of x = 0.158, y = 0.139, device efficiencies didn't improve yet. Instead of finding the proper host materials, the alteration of structure of OLEDs affected the improvement of electrical and optical characteristics of the devices. It was worthy that insertion the exciton formation zone with the host material between the emitting zone and the exciton blocking layer. The device with a structure of ITO/NPB/Ir(ppz)3 doped in CBP/CBP for the exciton formation zone/BCP/Liq/Al was fabricated and the characteristics were observed compared with the devices without the exciton formation zone. When CBP was used for the exciton formation zone, the device efficiency reached to over 0.25 cd/A. While the device used CBP only for the host showed the luminous efficiency of under 0.11 cd/A

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.571-576
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• 2006

We review work performed by our group and collaborators in the area of exciton formation. There are three components: (i) measurement of singlet fractions, (ii) analysis of magnetic resonance measurements, and (iii) models of exciton formation. We find that the fraction of singlet excitons is a controllable quantity, pointing the way to a new generation of all-fluorescent organic light emitting devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1654-1657
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• 2007

We demonstrate that the reduction of quantum efficiency with increasing current density in phosphorescent light emitting diodes (PhOLEDs) is related to the formation of excitons in hole transporting layer based on the analysis of emission spectra and exciton formation zone. By employing dual emitting layerm we could achieve maintaining quantum efficiency at high current density up to $10000\;cd/m^2$ as 13.1% compared to the devices with single emitting layer (S-EML) (${\eta}_{ext}$= 6.9% at $10000\;cd/m^2$).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.125.1-125.1
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• 2016

The excitonic insulator (EI), which is one of fundamental insulators, was theoretically proposed in 1967 but its material realization has not been established well. Only a few materials were proposed as EIs but their experimental evidences were indirect such as the renormalization of band dispersions or an anomaly in electrical resistivity. We conducted scanning tunneling microscopy / spectroscopy measurements and found out that $Ta_2$ $NiSe_5$, which was the most recently proposed as an EI, had a metal-insulator phase transition with the energy gap of 700 meV at 78 K. Moreover, the spatially delocalized excitonic energy level was observed within the energy gap, which could be the direct evidence of the EI ground state. Our theoretical model calculation with the order parameter of 150 meV reproduces the spectral function and the excitonic energy gap very well. In addition, experimental data shows that the band character is inverted at the valence and conduction band edges by the exciton formation, indicating that the mechanism of exciton condensation is similar to the Bardeen-Cooper-Schrieffer (BCS) mechanism of cooper pairs in superconductors.

• Current Applied Physics
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• 제18권12호
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• pp.1592-1599
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• 2018

The present study deals with the effect of dual cathode buffer layer (CBL) on the performance of bilayer of 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) and fullerene (C70)-based organic solar cell (OSC) with low donor concentration. OSC devices with CBLs have been fabricated using thermal vapor deposition technique. We report the use of lithium fluoride (LiF) and molybdenum trioxide ($MoO_3$) as CBLs. The insertion of LiF between C70 and aluminium (Al) electrode enhances the power conversion efficiency (PCE) of device from 1.89% to 2.47% but quenching of photogenerated excitons is observed at interface of C70 and LiF layers. Incorporation of $MoO_3$ between LiF and Al electrode further enhances PCE of device to 3.51%. This has also improved the material quality and device properties, by preventing the formation of gap states and diminishing exciton quenching.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.207-212
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• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

• 대한화학회지
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• 제48권3호
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• pp.249-253
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• 2004

감마선을 이용하여 수용액상에서 안정화 된 CdS 반도체 양자점을 제조하고, 제조된 양자점의 광학적 흡수스펙트럼을 분석하였다. CdS 양자점 제조시 카드뮴을 제공하는 물질로는 cadmium sulfate를 사용하였고, 황을 제공하는 물질로는 2-mercaptoethanol을 사용하였으며, 매개체로는 감마선이 조사된 물에 존재하는 환원제 $e^{-}_{aq}$을 이용하였다. 감마선 조사 전과 후에 제조된 CdS 양자점의 흡수스펙트럼을 비교한 결과, 감마선 조사 후에는 300 nm~400 nm 사이에서 CdS 양자점 형성에 의한 엑시톤 흡수 봉우리가 명확히 관측됨을 확인할 수 있었다. 또한 감마선의 조사 시간을 5분, 10분, 15분으로 증가시켜 감마선의 양을 다르게 조사시킨 결과 엑시톤 흡수 파장이 338 nm, 347 nm, 367 nm로 장파장 쪽으로 이동함을 확인함으로써, 감마선의 조사량을 조절하면 CdS 양자점의 크기를 변화시킬 수 있음을 알 수 있었다.

• 한국결정성장학회지
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• 제13권3호
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• pp.122-126
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• 2003

본 연구에서는 두께가 0.7 $\mu \textrm{m}$인 $Zn_{0.86}Mn_{0.14}$Te 에피막을 GaAs(100) 기판 위에 열벽 적층 성장하였다. 선택에칭용액에 의하여 GaAs 기판이 제거된 X-선 회절 패턴으로부터 $Zn_{0.86}Mn_{0.14}$Te에피막의 결정구조는 zincblende 이었으며 격자상수는 6.140 $\AA$으로 계산되었다. 이러한 격자상수 값과 Vegard 법칙으로부터 Mn의 조성비 x=0.14임을 알았다. 성장된 에피막의 결정성은 이중결정요동 곡선의 반폭치 값이 256 arcsec인 것으로부터 양호하다는 것이 확인되었다 상온에서 10K 까지 $Zn_{0.86}Mn_{0.14}$Te에피막의 온도에 따른 띠 간격 에너지를 측정하기 위하여 투과 스펙트럼으로부터 흡수 스펙트럼이 얻어졌다 온도가 감소할수록 흡수 스펙트럼에서 강하게 흡수가 일어나는 영역은 에너지가 큰 쪽을 향하여 이동하였고 흡쑤단 근처에서 자유 엑시톤 형성을 의미하는 흡수 피크가 생겨났다. $Zn_{0.86}Mn_{0.14}$Te에피막의 온도에 따른 자유 엑시톤 피크 에너지로부터 OK와 300 K일 때 띠 간격 에너지는 각각 2.4947 eV와 2.330 eV로 구하여졌다. 10 K에서 기판이 제거된 $Zn_{0.86}Mn_{0.14}$Te 에피막의 흡수 스펙트럼의 자유 엑시톤 피크 에너지는 광발광 피크 에너지보다 15.4 meV 정도 크다. 이 에너지 차이는 흡수 스펙트럼과 발광 피크 사이의 에너지 차이를 의미하는 Stokes shift를 나타낸다.

• Journal of Information Display
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• 제9권3호
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• pp.23-27
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• 2008

This paper reports that well-balanced white emission with three primary colors can be achieved with a simple white organic light-emitting diode (WOLED) structure of ITO / $\alpha$-NPD (50 nm) / $\alpha$-NPD: Btp2Ir(acac) (8 wt%, 6 nm) / $\alpha$-NPD (5 nm) / BCP (3 nm) / $Alq_3$: C545T (0.5 wt%, 10 nm) / $Alq_3$ (40 nm) / LiF (0.5 nm) / Al (100 nm). The external quantum efficiency of the device reached 3.8% at a current density (luminance) of 4.6 mA/$cm^2$ (310 cd/$m^2$), and the maximal luminance of the device reached 19,000 cd/$m^2$ at 11.5 V. The insignificant blue shift of the emitting color with an increasing current density can be attributed to the narrowing of the exciton formation zone width.