• The Journal of Korean Academy of Prosthodontics
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• v.47 no.2
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• pp.136-147
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• 2009

Statement of problem: Since the introduction of the concept of osseointegration in dental implants, high long-term success rates have been achieved. Though the use of dental implants have increased dramatically, there are few studies on domestic implants with clinical and objective long-term data. Purpose: The aim of this retrospective study was to provide long-term data on the $Implantium^{(R)}$ implant, which features a sandblasted and acid-etched surface and internal connection with microthreads. Material and methods: 106 $Implantium^{(R)}$ implants placed in 38 patients at Yonsei University Hospital were examined to determine the effect of various factors on implant success and marginal bone loss, through clinical and radiographic results during a 6 to 30 month period. Results: 1. Out of a total of 106 implants placed in 38 patients, one fixture was lost, resulting in a 99.1% cumulative survival rate. 2. Among the 96 implants which were observed throughout the study period, the survival rates were 97.0% in the maxilla and 100% in the mandible. The survival rate in the posterior regions was 98.9% and 100% in the anterior regions. 3. The mean bone loss during the first year after prosthesis placement was 0.17 mm, while the mean annual bone loss after the first year was 0.04 mm, which was statistically less than during the first year(P<.05). 4. There was no significant difference in marginal bone loss according to age during the first year(P>.05), but after the first year, the mean annual bone loss in patients above 50 years was significantly greater(P<.05) compared with patients under 50 years. 5. No significant difference in marginal bone loss was found according to the following factors: gender, jaw, location in the arch, type of implant(submerged or non-submerged), presence of bone grafts, type of prostheses, and type of opposing dentition(P<.05). Conclusion: Based on these results, the sole factor influencing marginal bone loss was age, while factors such as gender, jaw, location in the arch, type of implant, presence of bone grafts, type of prostheses and type of opposing dentition had no significant effect on bone loss. In the present study, the success rate of the $Implantium^{(R)}$ implant with a SLA surface and internal connection with microthreads was satisfactory up to a maximum 30 month period, and the marginal bone loss was in accord with the success criteria of dental implants.

• Applied Chemistry for Engineering
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• v.17 no.2
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• pp.223-228
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• 2006

Pore-size controlled porous carbons for the catalyst supports of the direct methanol fuel cell were prepared from the mesophase pitch by using the silica spheres with different sizes. Pitch solution in THF and spheres were mixed, carbonized and etched by 5 M NaOH to make porous carbon. Specific surface area of the porous carbons was $14.7{\sim}87.7m^2/g$ and average pore diameter was 50~550 nm which were dependent on the size of silica spheres. Aqueous reduction method was used to load 60 wt% PtRu on the prepared porous carbon supports. The electro-oxidation activity of the supported 60 wt% Pt-Ru catalysts was measured by cyclic voltammetry and unit cell test. For the 60 wt% Pt-Ru/porous carbon synthesized by 50 nm silica, current density value in the cyclic voltammetry test was $123mA/cm^2$ at 0.4 V and peak power density in the unit cell test were 105 and $162mW/cm^2$ under oxygen at 60 and $80^{\circ}C$, respectively.

• Restorative Dentistry and Endodontics
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• v.27 no.4
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• pp.382-388
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• 2002

Compomer is composed of matrix and filler : matrix is made of the combination of resins and polycarboxylic molecules that are light-cured, and a filler is a glass component which is capable of ion-release. The resin content of compomers produces polymerization shrinkage which can adversely affect marginal adaptation. Pretreatment is a fundamental step which is treated with conditioner or primer in the use of these materials. Microleakage of restorative materials has been investigated mostly by dye penetration method. Dye penetration method was not quantitative and not measured repeatedly. Fluid filtration method, introduced and developed by Pashley's group, has been extensively used for 20 years for research purpose to understand the physiology of dentin, as well as the effects of various restorative treatments on dentin permeability. It permits quantitative, nondestructive measurment of microleakage in a longitudinal manner. The purpose of this study was to evaluate the change of dentin permeability according to the process of compomer restoration. In this study. Cl V cavities were prepared on buccal surface of thirty extracted human molars. The prepared cavities were etched by 37% phosphoric acid. The experimental teeth were randomly divided into three groups. Each group was treated with following materials Group 1 : Prime & Bond NT/Dyract AP, Group2： Single Bond/F2000 compomer, Group 3 : Syntac Single Component/Compoglass. The bonding agent and compomer were applied for each group following manufacturers information. Dentin permeability of each group was measured at each process by fluid filtration method; Step 1 : preparation(smear layer). Step 2 : etching(smear layer removal), Step 3 : applying the bonding agent, Step 4 : filling the compomer. Dentin permeability was expressed by hydraulic conductance ($\mu\textrm{l}$ min$^{-1}$cm$H_2O$$^{-1}$). The data were analysed statistically using One-way ANOVA and Sheffe's method. The results were as follows : 1. Dentin permeability differences between each process were significant except between step 1 and step 2(p<0.01). 2. Dentin permeability after removal of smear layer was highly increased(p<0.01). 3. In most case, decrease of dentin permeability was obtained by applying bonding agent(p<0.01). 4. Dentin permeability differences among the experimental groups were not significant(p>0.05). 5. None of compomers used in this study showed perfect seal at the interface.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.68-72
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• 2009

This study investigated dry etching of acrylic in capacitively coupled $SF_6$, $SF_6/O_2$ and $SF_6/CH_4$ plasma under a low vacuum pressure. The process pressure was 100 mTorr and the total gas flow rate was fixed at 10 sccm. The process variables were the RIE chuck power and the plasma gas composition. The RIE chuck power varied in the range of $25{\sim}150\;W$. $SF_6/O_2$ plasma produced higher etch rates of acrylic than pure $SF_6$ and $O_2$ at a fixed total flow rate. 5 sccm $SF_6$/5 sccm $O_2$ provided $0.11{\mu}m$/min and $1.16{\mu}m$/min at 25W and 150W RIE of chuck power, respectively. The results were nearly 2.9 times higher compared to those at pure $SF_6$ plasma etching. Additionally, mixed plasma of $SF_6/CH_4$ reduced the etch rate of acrylic. 5 sccm $SF_6$/5 sccm $CH_4$ plasma resulted in $0.02{\mu}m$/min and $0.07{\mu}m$/min at 25W and 150W RIE of chuck power. The etch selectivity of acrylic to photoresist was higher in $SF_6/O_2$ plasma than in pure $SF_6$ or $SF_6/CH_4$ plasma. The maximum RMS roughness (7.6 nm) of an etched acrylic surface was found to be 50% $O_2$ in $SF_6/O_2$ plasma. Besides the process regime, the RMS roughness of acrylic was approximately $3{\sim}4\;nm$ at different percentages of $O_2$ with a chuck power of 100W RIE in $SF_6/O_2$ plasma etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.58-61
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• 1995

Instead of using CCl$_4$CCl$_2$F$_2$ gases, we used a alternative reaction gas of CFCs which we have developed, for the experiment of laser induced dry etching of laser induced dry etching of GaAs, and compared with the etch profile of a usual reation gas. Laser powers(power density) on the sample surface were varied from 100 mW(12.7 MW/$\textrm{cm}^2$) to 210mW(27 MW/$\textrm{cm}^2$) The laser beam was scanned over the sample by moving the cell with a speed raging from 8.3$\mu\textrm{m}$/sec and the gas pressure also was varied form 260 Torr to 760 Torr, High etching rates up to 136 $\mu\textrm{m}$/sec and an aspect ratio of 2.6 have been achieved by single scan of laser beam. The chemical compositions of the reaction products deposited on the etched groove were measured by Auger electron spectroscopy(AES) Etch profiles, including depth and width were observed by scanning electron microscopy(SEM)

• The korean journal of orthodontics
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• v.35 no.1 s.108
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• pp.43-50
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• 2005

The purpose of this study was to evaluate the effects of a sealant resin on enamel demineralization In orthodontic bracket bonding. The forty eight extracted sound bovine teeth were subdivided into four groups and treated with Phase II (Reliance, itasca. III) on the surface Group 1 was not treated. Group 2 was acid etched with 37% phosphoric acid for 30 seconds. Group 3 was applied with sealant after acid etching. Group 4 was applied with resin paste after acid etching and sealant application. Each group was demineralized in artificial caries solution. Demineralized enamel depth was measured by confocal laser scanning microscopy. The results were as follows: the mean demineralized enamel depth was $47.4{\mu}m$. (Group 1), $61.8{\mu}m$ (Group 2), $13.9{\mu}m$ (Group 3). $8.2{\mu}m$ (Group 4) the demineralized enamel depth was increased in Group 2 than in Group 1 (p<0.05); the demineralized enamel depth was reduced in Group 3 than in Group 1 and Group 2 with statistically significant differences (p<0.05): and demineralization in Group 4 was very little. The results of the present study indicate that sealant application is useful for reducing enamel demineralization in orthodontic bracket bonding.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.99-101
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• 2000

The fabrication of the submicron size hole has been interesting due to the potential application of the near field optical sensor or liquid metal ion source. The 2 micron size dot array was photolithographically patterned. After formation of the V-groove shape by anisotropic KOH etching, dry oxidation at $1000^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have an etch-mask for dry etching. The reactive ion etching by the inductively coupled plasma (ICP) system was performed in order to etch ~90 nm $SiO_2$ layer at the bottom of the V-groove and to etch the Si at the bottom. The negative ion energy would enhance the anisotropic etching by the $Cl_2$ gas. After etching, the remaining thickness of the oxide on the Si(111) surface was measured to be ~130 nm by scanning electron microscopy. The etched Si aperture can be used for NSOM sensor.

• Journal of Periodontal and Implant Science
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• v.41 no.5
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• pp.227-233
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• 2011

Purpose: The aim of this study was to compare osteoblast behavior on zirconia and titanium under conditions cultured with bone morphogenetic protein-2. Methods: MC3T3-E1 cells were cultured on sandblasted zirconia and sandblasted/etched titanium discs. At 24 hours after seeding MC3T3-E1, the demineralized bone matrix (DBM) gel alone and the DBM gel with bone morphogenetic protein-2 (BMP-2) were added to the culture medium. The surface topography was examined by confocal laser scanning microscopy. Cellular proliferation was measured at 1, 4, and 7 days after gel loading. Alkaline phosphatase activity was measured at 7 days after gel loading. The mRNA expression of ALPase, bone sialoprotein, type I collagen, runt-related transcription factor 2 (Runx-2), osteocalcin, and osterix were evaluated by real-time polymerase chain reaction at 4 days and 7 days. Results: At 1, 4, and 7 days after loading the DBM gel alone and the DBM gel with BMP-2, cellular proliferation on the zirconia and titanium discs was similar and that of the groups cultured with the DBM gel alone and the DBM gel with BMP-2 was not significantly different, except for titanium with BMP-2 gel. ALPase activity was higher in the cells cultured with BMP-2 than in the other groups, but there was no difference between the zirconia and titanium. In ALPase, bone sialoprotein, osteocalcin, Runx-2 and osterix gene expression, that of cells on zirconia or titanium with BMP-2 gel was much more highly increased than titanium without gel at day 7. The gene expression level of cells cultured on zirconia with BMP-2 was higher than that on titanium with BMP-2 at day 7. Conclusions: The data in this study demonstrate that the osteoblastic cell attachment and proliferation of zirconia were comparable to those of titanium. With the stimulation of BMP-2, zirconia has a more pronounced effect on the proliferation and differentiation of the osteoblastic cells compared with titanium.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.18-24
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• 2000

(Ba,Sr)$TiO_3$ thin films have attracted great interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2/Ar$ plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage=600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2 the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is $480{\AA}/min$ at 10 % $BCl_3$ to $Cl_2/Ar$. The change of Cl, B radical density measured by optical emission spectroscopy(OES) as a function of $BCl_3$ percentage in $Cl_2/Ar$. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2/Ar$. To study on the surface reaction of (Ba, Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion bombardment etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and $TiCl_4$ is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about 65~70$^{\circ}$.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.67-71
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• 2014

An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.