• Title/Summary/Keyword: etchant

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SCANNING ELECTRON MICROSCOPIC STUDY OF THE EFFECT OF ACIDIC DRINK ON ENAMEL EROSION : A CASE REPORT (탄산음료에 의해 부식된 법랑질 표면변화에 대한 증례발표)

  • Kim, Su-Youn;Park, Jae-Hong;Kim, Gwang-Chul;Choi, Young-Chul
    • Journal of the korean academy of Pediatric Dentistry
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    • v.35 no.3
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    • pp.509-515
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    • 2008
  • It is widely believed that the increase in the prevalence of dental erosion is due to soft drinks. The purpose of this study was to assess the influence of soft drinks and etchant on the erosion of tooth enamel and the effect of tooth brushing on the abrasion of eroded enamel, and the effect of milk, saliva and Tooth $Mousse^{(R)}$ on the remineralization. The changes in tooth enamel surface were observed by scanning electron microscophy. The results were as follows; 1. The pH of Coca-Cola and Chilsung-Cider were higher than the pH of FineEtch 37 and $Tyrian^{TM}SPE$. 2. The SEM photos revealed that the pattern of the surface eroded by Coca-Cola and Chilsung-Cider were more obvious than that eroded by etchants. 3. The results of remineralization by saliva, milk, Tooth $Mousse^{(R)}$ were not different from each other. 4. The remineralization by saliva decreased tooth brushing abrasion.

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Recovery of high-purity phosphoric acid from the waste acids in semiconductor manufacturing process (반도체(半導體) 제조공정(製造工程)에서 발생하는 혼산폐액(混酸廢液)으로부터 고순도(高純度) 인산회수(燐酸回收))

  • Park, Sung-Kook;Roh, Yu-Mi;Lee, Sang-Gil;Kim, Ju-Yup;Shin, Chang-Hoon;Kim, Jun-Young;Ahn, Jae-Woo
    • Resources Recycling
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    • v.15 no.5 s.73
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    • pp.26-32
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    • 2006
  • The waste solution discharged from the LCD manufacturing process contains acids like nitric, acetic and phosphoric acid and metal ions such as Al, Mo and other impurities. It is important to remove impurities less than 1 ppm in phosphoric acid to reuse as an etchant because the residual impurities even in sub-ppm concentration in semiconductor materials play a major role on the electronic properties. In this study, a mixed system of solvent extraction, diffusion dialysis and ion-exchange was developed to commercialize in an efficient system fur recovering the high-purity phosphoric acid. By vacuum evaporation, almost 99% of nitric and acetic acid was removed. And by solvent extraction method with tri-octyl phosphate (TOP) as an extractant, the removal of acetic and nitric acid from the acid mixture was achieved effectively at the ratio A/O=1/3 with 4th stage of extraction stage. About 97.5% of Al and 36.7% of Mo were removed by diffusion dialysis. Essentially almost complete removal of metal ions and purification of high-purity phosphoric acid could be obtained by using ion exchange.

Effects of filler addition to bonding agents on shear bond strength (FILLER함량이 BONDING AGENT의 전단접착강도에 미치는 영향)

  • Oh, Young;Oh, Myung-Hwan;Cho, Byeong-Hoon;Son, Ho-Hyun;Kwon, Hyuk-Choon;Um, Chung-Moon
    • Restorative Dentistry and Endodontics
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    • v.27 no.1
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    • pp.44-53
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    • 2002
  • 목적 : 최근 개발된 bonding agent 중 일부는 다양한 함량의 filler를 포함하고 있으며 filler의 첨가는 bonding agent의 기계적인 물성을 향상시킴으로써 접착력의 향상에 기여한다는 주장이 있다. 본 연구에서는 다양한 함량의 filler를 포함한 adhesive를 실험적으로 만들어, filler의 함량이 전단접착강도에 미치는 영향을 살펴보고 임상적으로 가장 적절한 filler의 함량을 알아보고자 하였다. 또 adhesive의 간접인장강도를 측정하여 adhesive의 기계적인 물성과 접착력과의 상관관계를 알아보았다. 방법 : 발거된 건전한 70개의 대구치를 투명 레진에 매몰하고 상아질면을 노출시켰다. 3M사의 Scotchbond Multipurpose의 etchant와 primer를 제조사의 지시대로 적용하고 1$\mu\textrm{m}$크기의 barium glass filler를 0, 5, 10, 15, 20, 30, 45wt% 포함하도록 실험적으로 제작한 adhesive를 도포한 후 레진을 충전하여 시편을 완성하였다. Instron으로 0.5mm/min의 속도에서 전단접착강도를 측정하고 그 단면을 입체현미경으로 관찰하여 파절의 양상을 확인하였다. Filler함량에 따른 adhesive의 후경을 측정하기 위해 상기한 방법으로 시편을 제작하여 주사 전자현미경으로 관찰한 후 Sigmascan을 이용하여 그 후경을 측정하였다. 또, 지름 4mm 높이 6mm의 원통형 시편을 제작하여 Instron로 간접인장강도의 측정을 시행하였다. 얻어진 결과는 Kruskal-Wallis test와 Mann-Whitney test를 시행하여 분석하였으며, 상관관계를 분석을 위해 Pearson Product Moment Correlation Coefficient를 구하였다. 결과 : 1) Filler함유량에 따라 전단접착강도는 유의할 만한 차이를 보였다(p<0.05). 2) Filler함량의 증가에 따라 전단접착강도는 유의하게 증가하여 15% 수준에서 가장 높은 갈(19.9$\pm$1.38Mpa)을 보였으며 20% 이상의 수준에서는 유의하게 감소하였다(p<0.05). 3) Adhesive의 간접인장강도는 20% 수준까지는 증가하는 양상을 보였으나 통계적 유의성은 없었으며(p>0.05), 30% 이상에서는 유의할 만한 감소를 보였다(p<0.05). 4) Adhesive의 후경은 0% 수준에서 5.97$\pm$1.23$\mu\textrm{m}$부터 45%수준에서 73.37$\pm$11.7$\mu\textrm{m}$까지 유의하게 증가하였다(p<0.05). 5) Filler함량에 따른 Adhesive의 간접인장강도와 전단접착강도는 상관관계가 없었다.

THE STUDY ON SHEAR BOND STRENGTH OF VARIOUS DENTIN BONDING SYSTEMS IN PRIMARY DENTIN (유치 상아질에 대한 수종의 상아질 결합제의 전단결합강도에 대한 연구)

  • Kang, Sun-Hee;Lee, Kwang-Hee;Kim, Dae-Eup
    • Journal of the korean academy of Pediatric Dentistry
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    • v.32 no.2
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    • pp.293-299
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    • 2005
  • It is important to reduce chair time and procedure in restorative treatment for children. Composite resin is not only used in esthetic restoration of anterior teeth but also posterior teeth by its improved physical property. The 7th generation dentin bonding system was recently developed in order to simplify three steps which is needed to bond composite resin to tooth surface-etchant, primer, adhesive. We compared shear bond strengths of 4, 5, 6, 7th generations dentin bonding systems. The primary dentin was pretreated with 4, 5, 6, 7th generation dentin bonding systems. Then composite resin was cured to the specimen using molds 2.5mm in diameter and 2mm in height. Thermocycling was performed and shear bond strength was finally measured. The results were as follow; 1. The mean values of shear bond strengths in 5th generation dentin bonding system(group 2) were greater than those of 4, 6, 7th generation dentin bonding system(group 1, 3, 4). The differences were statistically significant. 2. The mean values of shear bond strengths in 4th generation dentin bonding system(group 2) were greater than those of 6, 7th generation dentin bonding system(group 1, 3, 4). But, the differences were not statistically significant. 3. Between the mean values of shear bond strengths in 6, 7th generation dentin bonding system(group 3, 4) were similar.

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Effect of Alcohols on the Dry Etching of Sacrificial SiO2 in Supercritical CO2 (초임계 이산화탄소를 이용한 웨이퍼의 건식 식각에서 알콜 첨가제의 효과)

  • Kim, Do-Hoon;Jang, Myoung-Jae;Lim, Kwon-Taek
    • Clean Technology
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    • v.18 no.3
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    • pp.280-286
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    • 2012
  • The dry etching of sacrificial $SiO_2$ was performed in supercritical carbon dioxide. The etching of boron phosphor silica glass (BPSG), tetraethyl orthosilicate (TEOS), thermal $SiO_2$, and Si-nitride (SiN) was investigated by using a two chamber system with HF/py etchant and alcohol additives. The etch rate of sacrificial $SiO_2$ increased upon the addition of methanol. The etch selectivity of BPSG with respect to SiN was highest with IPA although the highest etch rate was resulted from methanol except BPSG. The etch rate increased with the temperature in HF/py/MeOH system. Especially the increase of the etch rate was much higher for BPSG with an increase in the reaction temperature. The etch residue was not reduced apparently upon the addition of alcohol cosolvents to HF/py. While the etch rate in HF/$H_2O$ was higher than HF/py/alcohol system, the rate decreased with the addition of alcohols to HF/$H_2O$. The cantilever beam structure of high aspect ratios was released by the dry ething in supercritical carbon dioxide without damage.

Removal of Metallic Impurity at Interface of Silicon Wafer and Fluorine Etchant (실리콘기판과 불소부식에 표면에서 금속불순물의 제거)

  • Kwack, Kwang-Soo;Yoen, Young-Heum;Choi, Seung-Ok;Jeong, Noh-Hee;Nam, Ki-Dae
    • Journal of the Korean Applied Science and Technology
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    • v.16 no.1
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    • pp.33-40
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    • 1999
  • We used Cu as a representative of metals to be directly adsorbed on the bare Si surface and studied its removal DHF, DHF-$H_2O_2$ and BHF solution. It has been found that Cu ion in DHF adheres on every Si wafer surface that we used in our study (n, p, n+, p+) especially on the n+-Si surface. The DHF-$H_2O_2$ solution is found to be effective in removing metals featuring high electronegativity such as Cu from the p-Si and n-Si wafers. Even when the DHF-$H_2O_2$ solution has Cu ions at the concentration of 1ppm, the solution is found effective in cleaning the wafer. In the case the n+-Si and p+-Si wafers, however, their surfaces get contaminated with Cu When Cu ion of 10ppb remains in the DHF-$H_2O_2$ solution. When BHF is used, Cu in BHF is more likely to contaminate the n+-Si wafer. It is also revealed that the surfactant added to BHF improve wettability onto p-Si, n-Si and p+-Si wafer surface. This effect of the surfactant, however, is not observed on the n+-Si wafer and is increased when it is immersed in the DHF-$H_2O_2$ solution for 10min. The rate of the metallic contamination on the n+-Si wafer is found to be much higher than on the other Si wafers. In order to suppress the metallic contamination on every type of Si surface below 1010atoms/cm2, the metallic concentration in ultra pure water and high-purity DHF which is employed at the final stage of the cleaning process must be lowered below the part per trillion level. The DHF-$H_2O_2$ solution, however, degrades surface roughness on the substrate with the n+ and p+ surfaces. In order to remove metallic impurities on these surfaces, there is no choice at present but to use the $NH_4OH-H_2O_2-H_2O$ and $HCl-H_2O_2-H_2O$ cleaning.

Oxygen Vacancy Effects of Two-Dimensional Electron Gas in SrTiO3/KNbO3 Hetero Structure

  • Choi, Woo-Sung;Kang, Min-Gyu;Do, Young-Ho;Jung, Woo-Suk;Ju, Byeong-Kwon;Yoon, Seok-Jin;Yoo, Kwang-Soo;Kang, Chong-Yun
    • Journal of Sensor Science and Technology
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    • v.22 no.4
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    • pp.244-248
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    • 2013
  • The discovery of a two-dimensional electron gas (2DEG) in $LaAlO_3$ (LAO)/$SrTiO_3$ (STO) heterostructure has stimulated intense research activity. We suggest a new structure model based on $KNbO_3$ (KNO) material. The KNO thin films were grown on $TiO_2$-terminated STO substrates as a p-type structure ($NbO_2/KO/TiO_2$) to form a two-dimensional hole gas (2DHG). The STO thin films were grown on KNO/$TiO_2$-terminated STO substrates as an n-type structure to form a 2DEG. Oxygen pressure during the deposition of the KNO and STO thin films was changed so as to determine the effect of oxygen vacancies on 2DEGs. Our results showed conducting behavior in the n-type structure and insulating properties in the p-type structure. When both the KNO and STO thin films were deposited on a $TiO_2$-terminated STO substrate at a low oxygen pressure, the conductivity was found to be higher than that at higher oxygen pressures. Furthermore, the heterostructure formed at various oxygen pressures resulted in structures with different current values. An STO/KNO heterostructure was also grown on the STO substrate, without using the buffered oxide etchant (BOE) treatment, so as to confirm the effects of the polar catastrophe mechanism. An STO/KNO heterostructure grown on an STO substrate without BOE treatment did not exhibit conductivity. Therefore, we expect that the mechanics of 2DEGs in the STO/KNO heterostructures are governed by the oxygen vacancy mechanism and the polar catastrophe mechanism.

Recovery of phosphoric acid from the waste acids in semiconductor manufacturing process (반도체 제조공정에서 발생하는 혼산폐액으로부터 고순도 인산 회수)

  • Park, Sung-Kook;Roh, Yu-Mi;Lee, Sang-Gil;Kim, Ju-Yup;Shin, Chang-Hoon;Ahn, Jae-Woo
    • Proceedings of the Korean Institute of Resources Recycling Conference
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    • 2006.05a
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    • pp.90-94
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    • 2006
  • The waste solution discharged from the LCD manufacturing process contains acids like nitric, acetic and phosphoric acid and metal ions such as Al, Mo and other impurities. It is important to removal of impurities to tess than 1ppm in phosphoric acid to reuse as an etchant because the residual impurities even in sub-ppm concentration in semiconductor materials play a major role on the electronic properties. In this study, we have been clearly established that a mixed system of solvent extraction, diffusion dialysis and ion-exchange technique, which made individually the most of characteristics is developed to commercialize in an efficient system for recovering the high-purity phosphoric acid. By applying vacuum evaporation, the yield of the process are almost 99% removal of nitric acid and acetic acid was achieved. And by applying the solvent extraction method with tri-octyl phosphate(TOP) as an extractant, the removal of acetic and nitric acid from the acid mixture was achieved effectively at the ratio O/A=1/3 with four stages and the stripping of nitric acid from organic phase is attained at a ration of O/A=1 with six stages by distilled water. About 97% and 76% removal of Al and Mo were achieved by diffusion dialysis. Essentially complete less than 1ppm removal of Al, Mo by using ion exchange ion resin and purification of the phosphoric acid was obtain.

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THE EFFECT OF Er,Cr:YSGG IRRADIATION ON MICROTENSILE BOND STRENGTH OF COMPOSITE RESIN RESTORATION (Er,Cr:YSGG 조사가 복합레진 수복의 미세인장 결합강도에 미치는 영향)

  • Son, Jeong-Hye;Kim, Hyeon-Cheol;Hur, Bock;Park, Jeong-Kil
    • Restorative Dentistry and Endodontics
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    • v.35 no.2
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    • pp.134-142
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    • 2010
  • The purpose of this study was to evaluate the effect of Er,Cr:YSGG laser irradiation with hypersensitivity mode on microtensile bond strength of composite resin. Twenty extracted permanent molars were randomly assigned to six groups, according to the irradiation of Er,Cr:YSGG laser, adhesive system (Optibond FL or Clearfil SE bond) and application time of etchant (15 sec or 20 sec). Then composite resin was build up on each conditioned surface. The restored teeth were stored in distilled water at room temperature for 24 h and twelve specimens for each group were prepared. All specimens were subjected to microtensile bond strength and the fracture modes were evaluated. Also, the prepared dentin surface and laser irradiated dentin surface were examined under SEM. The results were as follows: 1. The microtensile bond strength of laser irradiated group was lower than that of no laser irradiated group. 2. Regardless of laser irradiation, the microtensile bond strength of Optibond FL was higher than that of Clearfil SE bond. And the microtensile bond strength of 20 sec etching group was higher than that of 15 sec etching group when using Optibond FL. 3. The SEM image of laser irradiated dentin surface showed prominent peritubular dentin, opened dentinal tubules and no smear layer.

STUDY OF THE TENSILE BOND STRENGTH OF COMPOSITES RESINS APPLIED TO ACID-ECHED ENAMEL (산처리(酸處理)된 Enamel표면(表面)에 대(對)한 Composite resin의 인장접착강도(引張接着强度)에 관(關)한 연구(硏究))

  • Lee, Young-Kun;Min, Byung-Soon;Choi, Ho-Young;Park, Sung-Jin
    • Restorative Dentistry and Endodontics
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    • v.12 no.2
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    • pp.45-53
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    • 1987
  • The purpose of this study was to evaluate the tensile bond strength between composite resin and the human enamel. Three composite resin systems, two chemical (Clearfil Posterior, and Clearfil Posterior-3) and one light cure (Photo Clearfil-A), used with and without an intermediate resin (clearfil bonding agent), were evaluated under different amounts of load (10g, 200g and 200g for a moment) for in vitro tensile bond strength to acid-eched human enamel. Clinically intact buccal or lingual surfaces of 144 freshly extracted human permanent molars, embedded in acrylic were flattened with No #600 carborundum discs. Samples were randomly assigned to the different materials and treatments using a table of random numbers. Eight samples were thus prepared for each group(Table 2) these surfaces were etched with an acid etchant (Kurarey Co. Japan) in a mode of etching for 30 seconds, washing for 15 seconds, and drying for 30-seconds. During the polymerization of composite resin on the acid-etched enamel surfaces with and without bonding agent 10-gram, 200 gram and temporary 200 gram of load were applied. The specimens were stored in 50% relation humidity at $37^{\circ}C$ for 24 hours before testing. An universal Testing machine (Intesco model No. 2010, Tokyo, Japan) was used to apply tensile loads in the vertical directed (fig 5), and the force required for separation was recorded with a cross head speed of 0.25 mm/min and 20 kg in full scale. The results were as follow: 1. The tensile bond strength was much greater in applying a bonding agent than in not doing that. 2. The tensile bond strength of chemical cure composite resin was higher than that of light cure composite resin with applying on bonding agent on the acid-etched enamel. 3. In case of not applying a bonding agents on the acid-etching enamel, the highest tensile bond strength under 200 gram of load was measured in light cure composite resin. 4. The tensile bond strength under 200-gram of load has no relation with applying the bonding agent. 5. Under the load of 10-gram, There was significant difference in tensile bond strength as applying the bonding agent.

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