• Polymer(Korea)
• /
• v.37 no.5
• /
• pp.649-655
• /
• 2013

In order to use as supporters for the reinforced composite fuel cell membrane, poly(acrylic acid)-grafted porous polytetrafluoroethylenes (PTFEs) were prepared via introduction of poly(acrylic acid) graft chains by a radiation grafting method. FTIR was utilized to confirm the successful introduction of poly(acrylic acid) graft polymer chains into the porous PTFEs. Contact angles were examined to observe the hydrophilicity of the surface of the prepared substrates. The result indicates that the hyrophilicity of the surface in the prepared substrates increases with an increase in the number of hydrophilic polymer chains. FE-SEM, gurley number, and tensile strength were also utilized to characterize the prepared substrates.

• Current Photovoltaic Research
• /
• v.11 no.1
• /
• pp.8-12
• /
• 2023

In this work, we investigated the thickness of Ag precursor layer to improve the performance of flexible CIGSe solar cells grown on stainless steel (STS) substrates through three-stage co-evaporation with Ga grading followed by alkali treatments. The small amount of incorporated Ag in CIGSe films showed enhancement in the grain size and device efficiency. With an optimal 6 nm-thick Ag layer, the best cell on the STS substrate yielded more than 16%, which is comparable to the soda-lime glass (SLG) substrate. Thus, the addition of controlled Ag combined with alkali post-deposition treatment (PDT) led to increased open-circuit voltage (VOC), accompanied by the increased built-in potential as confirmed by capacitance-voltage (C-V) measurements. It is related to a reduction of charge recombination at the depletion region. The results suggest that Ag alloying and alkali PDT are essential for producing highly efficient flexible CIGSe solar cells.

• Journal of Sensor Science and Technology
• /
• v.31 no.4
• /
• pp.255-259
• /
• 2022

In this study, we fabricated ZnS substrates with excellent transmittance in the mid-infrared region (3-5 ㎛) using hot pressing instead of conventional chemical vapor deposition (CVD). Diamond-like carbon (DLC) was coated on either one or both sides of the ZnS substrates to improve their mechanical properties and transmittance efficiency. To reduce the reflectance and further improve transmittance in the mid-infrared region, anti-reflection (AR) coating was designed for DLC/ZnS /AR and AR/ ZnS /AR structures. The coating structure, microstructure, and optical properties of the AR-coated ZnS substrates were subsequently investigated by employing energy dispersive X-ray spectroscopy, scanning electron microscopy, and Fourier-transform infrared (FTIR) spectroscopy. The FTIR spectroscopy results demonstrated that, in the mid-infrared region, the average transmittance of the samples with AR coating on one and both sides increased by approximately 18% and 27%, respectively. Thus, AR coating improved the transmittance of the ZnS substrates.

• 한국초전도학회:학술대회논문집
• /
• v.13
• /
• pp.74-74
• /
• 2003

• 한국초전도학회:학술대회논문집
• /
• v.12
• /
• pp.70-70
• /
• 2002

• Journal of Electrical Engineering and Technology
• /
• v.8 no.3
• /
• pp.603-609
• /
• 2013

In this paper, we describe the analysis of inkjet-printed silver (Ag) patterns on epoxy-coated substrates according to several reliability evaluation test method guidelines for conventional printed circuit boards (PCB). To prepare patterns for the reliability analysis, various regular test patterns were created by Ag inkjet printing on flame retardant 4 (FR4) and polyimide (PI) substrates coated with epoxy for each test method. We coated the substrates with an epoxy primer layer to control the surface energy during printing of the patterns. The contact angle of the ink to the coated epoxy primer was $69^{\circ}$, and its surface energy was 18.6 $mJ/m^2$. Also, the substrate temperature was set at $70^{\circ}C$. We were able to obtain continuous line patterns by inkjet printing with a droplet spacing of $60{\mu}m$. The reliability evaluation tests included the dielectric withstanding voltage, adhesive strength, thermal shock, pressure cooker, bending, uniformity of line-width and spacing, and high-frequency transmission loss tests.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.2
• /
• pp.483-488
• /
• 2014

The nucleophilic substitution reactions of Y-aryl methyl (8) and Y-aryl propyl (10) chlorothiophosphates with X-pyridines are studied kinetically in acetonitrile at $35.0^{\circ}C$. The Hammett and Bronsted plots with X in the nucleophiles for both substrates exhibit biphasic concave upwards with a break region between X = 3-Me and H. The obtained values of the cross-interaction constants (${\rho}_{XY}$) are negative with 8 while positive with 10 despite the same free energy correlations with X for both substrates. A stepwise mechanism with a rate-limiting bond formation is proposed with 8, whereas a stepwise mechanism with a rate-limiting leaving group departure from the intermediate is proposed with 10 based on the sign of ${\rho}_{XY}$, negative and positive with 8 and 10, respectively. A frontside nucleophilic attack is proposed with strongly basic pyridines based on the considerably great magnitudes of ${\rho}_X$ and ${\beta}_X$ values while a backside attack is proposed with weakly basic pyridines based on the relatively small magnitudes of ${\rho}_X$ and ${\beta}_X$ for both substrates.

• Journal of IKEEE
• /
• v.20 no.2
• /
• pp.177-180
• /
• 2016

The effect of varying thickness of Ag/Ti metal bilayer and annealing time have investigated for controlling self-organized nanoparticles (NPs) on 4H-SiC substrate. In addition, Glass and Si substrate which have different surface energy from SiC were fabricated for analyzing interaction of agglomeration. The results of FE-SEM indicated the different formation behaviors of NPs in various ranges of fabrication condition. The surface energy was measured by using a Contact Angle Analyzer. The formation of network-like NPs was observed on Glass and 4H-SiC, respectively, whereas it was not the case on Si substrates. It has been found that the size of NPs increases with decreasing surface energy, due to particle size-dependent hydrophilic properties of substrates. The different formation behavior was explained by using Young's equation for the contact angles between the metal and different substrates.

• Progress in Superconductivity
• /
• v.7 no.2
• /
• pp.130-134
• /
• 2006

Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.31 no.6
• /
• pp.233-239
• /
• 2021

In this study, Ga₂O₃/diamond layers were grown on Si substrates to improve the thermal characteristics of Ga₂O₃ materials. Firstly, diamond thin film was grown on Si substrates by hot-filament chemical vapor deposition. Afterward, Ga₂O₃ layer was grown in the growth temperature range of from 450~600℃ by mist chemical vapor deposition. We found that layer separation happens at the Ga₂O₃/diamond interface at the growth temperature of 500℃. This is attributed to the different thermal expansion coefficient of the mixture of amorphous and crystalline structures during cooling process. Therefore, this study might contribute to the heat-sink-layer bonded power semiconductor applications by stabilizing the thermal properties at Ga₂O₃/diamond interface.