• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.124-125
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$ prepared from horizontal electric furnace. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$, obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - $(7.721{\times}10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy$({\Delta}cr)$ and the spin-orbit splitting energy$({\Delta}so)$ for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11^-}$ exciton peaks.

• Structural Engineering and Mechanics
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• v.86 no.6
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• pp.739-750
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• 2023

This study examines the two-level behavior of the toggle brace damper within a steel frame having a yielding pipe damper and rotational friction damper. The proposed system has two kinds of fuse for energy dissipation in two stages. In this mechanism, rotational friction damper rather than hinged connection is used in toggle brace system, connected to a pipe damper with a limited gap. In order to create a gap, bolted connection with the slotted hole is used, such that first a specific movement of the rotational friction damper solely is engaged but with an increase in movement, the yielding damper is also involved. The performance of the system is such that at the beginning of loading the rotational friction damper, as the first fuse, absorbs energy and with increasing the input load and further movement of the frame, yielding damper as the second fuse, along with rotational friction damper would dissipate the input energy. The models created by ABAQUS are subjected to cyclic and seismic loading. Considering the results obtained, the flexibility of the hybrid two-level system is more comparable to the conventional toggle brace damper. Moreover, this system sustains longer lateral displacements. The energy dissipation of these two systems is modeled in multi-story frames in SAP2000 software and their performance is analyzed using time-history analysis. According to the results, permanent relocations of the roof in the two-level system, in comparison with toggle brace damper system in 2, 5, and 8-story building frames, in average, decrease by 15, 55, and 37% respectively. This amount in a 5-story building frame under the earthquakes with one-third scale decreases by 64%.

• Nuclear Engineering and Technology
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• v.56 no.7
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• pp.2842-2849
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• 2024

The amorphous glasses containing PbO, ZnO, MgO, and B₂O₃ have been fabricated using the melt quenching technique. The structural properties have been analysed using the Fourier-transform infrared (FTIR) and Raman spectroscopy. Derivative of Absorption Spectra Fitting (DASF) method have been used to estimate the band gap energy from the UV-Vis absorption data which decreases from 3.02 eV to 2.66 eV with increasing the concentration of the PbO.The four glass samples 0.284 and 0.826 MeV showed unique variations in terms of gamma attenuation ability. LZMB4 glass sample proved to be the mist effective in terms of shielding of gamma radiation as it requires little distance compared to LZMB3, LZMB2 and LZMB1 to attenuate. RPE revealed a raise with increase in the thickness of the material and reduces as the energy raises. TF is superior in LZMB1 compared to LZMB2, LZMB3 and LZMB4, confirming that, LZMB4 will attenuate better. The Z_Eff of the materials was seen falling as the energy increases, confirming that the linear attenuation coefficient of the glass materials decreases when the energy is increased. The results confirmed that, glass material LZMB4 is the best option especially for gamma radiation shielding applications compared to LZMB3, followed by LZMB2, then LZMB1.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.60 no.4
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• pp.236-240
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• 2011

Currently one of the most importance issues in industrial sector is energy cost and energy efficiency. The manufacturing plants especially have made many efforts to reduce energy cost by implementing maintenances. But in many cases, they are not aware that how much energy could be saved more. If we know the best energy consumption, which signifies energy baseline, we can control the intensity of maintenances. One way to obtain the baseline is using proper statistics from a specific plant, a sector of industry. Energy bandwidth signifies the gap between actual Specific Energy Consumption(SEC) of a certain plant and minimum SEC of the best plant, and estimate energy saving potential(ESP) is a result of bandwidth analysis. We chose a model plant and implemented some maintenance for a year, and then we obtained ESP. Additionally we could determine the decreased amount of carbon emissions from the plant using Carbon Emissions Factor(CEF) by Intergovernmental Panel on Climate Change(IPCC).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.3
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• pp.122-126
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• 2003

In this study, $Zn_{0.86}Mn_{0.14}$Te epilayer of 0.7 $\mu\textrm{m}$-thickness was grown on GaAs(100) substrate by using hot wallepitaxy. GaAs(100) substrate was removed from $Zn_{0.86}Mn_{0.14}$Teepilayer by the selective etching solution. The crystal structure and the lattice constant of only Z $n_{0.86}$ M $n_{0.14}$Te epilayer were investigated to be zincblende and 6.140 $\AA$ from X-ray diffraction pattern, respectively. Mn composition x of $Zn_{1-x}Mn_x$Te epilayer was found to be 0.14 using this lattice constant and Vegard's law. The crystal quality of the epilayer was confirmed to be very good due to 256 arcsec-full-width at half-maximum of the double crystal rocking curve. The absorption spectra from the transmission ones were obtained to measure the band gap energy of $Zn_{0.86}Mn_{0.14}$Te epilayer from 300 K to 10 K. With the decreasing temperature,. strong absorption regions in the absorption spectra were shifted to higher energy side and the absorption peak meaning the free exciton formation appeared near the absorption edge. The band gap energy values of $Zn_{0.86}Mn_{0.14}$Te epilayer at 0 K and 300 K were found to be almost 2.4947 eV and 2.330 eV from the temperature dependence of the free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer, respectively. The free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer without GaAs substrate was larger 15.4 meV than photoluminescence peak position energy at 10 K. This energy difference between two peaks was analysed to be Stokes shift.

• Rapid Communication in Photoscience
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• v.3 no.3
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• pp.59-60
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• 2014

The trans-$A_2B_2$ porphyrin and Ni-porphyrin derivatives were synthesized by Suzuki coupling of bromoporphyrin with arylborate as a key step. The band gaps of those complexes were measured from their absorption, emission and cyclic voltammetric data. All the LUMO energy level of porphyrin derivatives is lower than that of P3HT, and the HOMO energy level is evaluated higher than the HOMO of PCBM.

• Journal of the Korean Vacuum Society
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• v.2 no.1
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• pp.65-72
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• 1993

MgGa2-xInxSe4 single crystal을 bridgman technique로 성장시켰다. 성장된 단결정은 rhombohedral 구조를 가지고 있었으며, lattice constant는 a=3.950~4.070$\AA$, c=38.89~39.50$\AA$으로 주어졌고, 높은 photoconductivity를 가지고 있었다. 이 단결정의 energy gap은 2.20~1.90eV이었고, photoconductivity spectrum에 peak의 energy는 2.31~2.01eV로 주어졌으며, photoconductivity의 time constant는 0.24~0.34sec로 주어졌다.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.31 no.11
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• pp.141-145
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• 1982

Optical absorption properties of an orphous Se film due to interband electronic transitions are observed in the visible range by varying the folm thickness. Amorphous Se films were prepared by evaporation method. As the experimental results, it is found that optical energy gap is around 2.07(e V), and the optical constants depend on the film thickness, evaporation-deposition conditions, and incident photon energy.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.389-392
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• 1987

The energy gaps of undoped and Cr doped GaAs and $Al_{0-3}Ga_{0-7}As$ was measured nondestructively using surface acoustic wave (SAW) technique. The result is good agreement with other reported result. This technique is inexpensive and simple one for the measurement of mole fraction of $Al_xGa_{1-x}As$.

• Journal of Family Resource Management and Policy Review
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• v.7 no.1
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• pp.91-101
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• 2003

The research examines individual environmental characteristics, the consciousness energy conservation and behavior level of college students that relate to the experience of taking courses on residential energy use held in college, as well as the influence of experiencing school education in the past. This is to ultimately evaluate the effect of school education on the consciousness of the energy conservation and behavior level of college students at present time, in order to assist in proposing a direction for the school education on residential energy use. The results of the research can be summarized as follows: First, there appeared a gap between the group that has attended courses on residential energy use and the group that has not in terms of their major, school year and the level of consciousness of the need for energy conservation. Second, students that have attended courses on residential energy use in college were reported to have received more training in high school through textbooks and guidance of teachers and have more experience in special education. And third, it appeared that taking courses in residential energy use by college students are influenced by personal factors such as their school year and gender, major, contents of their high school textbooks and the level of consciousness of the need for energy conservation.