• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• Asian-Australasian Journal of Animal Sciences
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• v.18 no.7
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• pp.973-979
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• 2005

The present study was planned to examine the effect of different feeding regimens on milk urea concentration and milk protein concentration. The objectives are to describe the diurnal variations of milk urea (MU) concentration and to predict plasma urea (PU) concentration from MU concentration. Six lactating Murrah buffaloes were distributed in two groups and were fed two different diets in a crossover design. The diets consisted of leguminous crops as diet 1 (berseem (Trifolium alexandrinum)+concentrate mixture 1+wheat straw)) and non-leguminous crops as diet 2 (oats (Avana sativa)+concentrate mixture 2+wheat straw). All the diets were isocaloric and isonitrogenous. Each diet was fed to the animals for a period of 28 days, followed by a 10 day gap to obviate the carry over effect of the previous diet and then a switch over to the other diet. Digestibility trials were conducted on the last 7 days of each feeding period. Milk samples were collected on day 3, 7, 10, 14, 17, 21, 24 and 28 of the feeding period and blood samples were collected on the same day at morning within 30 minutes after morning milking. The average milk urea (MU) values (mg/dl) differed significantly (p<0.01) and were 44.83${\pm}$0.62 and 42.53${\pm}$0.73, respectively, for diets 1 and 2. Milk urea concentrations (mg/dl) also varied (p 0.01) among the days of feeding period, but were stabilized after 10th day of feeding period. In contrast, diets and days of feeding period had no significant effect on percent milk protein. Plasma urea concentration showed a significant (p<0.01) positive correlation (r = 0.93) with MU concentration. To predict the PU from MU the following equation was developed 'PU = 10.67${\pm}$0.76${\times}$MU (mg/dl) with $R^2$ = 0.87'. A clear diurnal variation of MU was found with lowered morning value (42.04${\pm}$0.68 mg/dl) than the evening value (45.32${\pm}$0.66 mg/dl). Present findings suggested that MU or PU concentration could be used as an indicator to monitor the feeding strategy. Plasma urea can be predicted from MU, whenever interpretation of milk urea data required consideration of diurnal variation.

• Journal of Navigation and Port Research
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• v.28 no.1
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• pp.97-104
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• 2004

Introduction of wave model, take into account the effect of tide, wind and wave induced currents at the coastal waters of complex bathymetry, is a very important factor for most coastal engineering design and disaster protection problems. As the steady state spectral wave model could simulate depth induced wave shoaling and refraction, current induced refraction effect, steepness induced wave breaking, diffraction, wind wave growth, wave-wave interaction, and wave-current interaction that redistribute energy, this would support and compensate the gap in the real field of design where other wave models could not deal and cause wrong estimation. In this study, for better understanding and analysis of wave transformation process, we applied the spectral wave model to the large coastal waters near Gaduck Island where the Busan new port construction project is going on. We also compared the simulation results with the calculatea from the existing model. From such a trial of this study, we hope that broader and safer use of the spectral model in the area of port design and disaster prevention system come through in near future.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.493-493
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• 2014

The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

• Korean Journal of Materials Research
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• v.22 no.5
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• pp.259-273
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• 2012

Chalcogenide-based semiconductors, such as $CuInSe_2$, $CuGaSe_2$, Cu(In,Ga)$Se_2$ (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of $10^4cm^{-1}$, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.339-346
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• 2008

Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

• Korean Journal of Environment and Ecology
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• v.29 no.4
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• pp.626-635
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• 2015

Recently, the number of trail users in Korea has risen tremendously. Consequently, the cost of safety measures related to hiking is sharply increasing. Despite the safety cost input, the number of heart-related adverse events has been not decreasing. Therefore, this research aims to suggest the use of objective and quantitative trail use information in terms of course difficulty. The study site is Jirisan Dullegil (Jirisan Forest Trail). The currently available trail difficulty information either provides the difficulty rating in terms of 3 to 5 levels according to several empirical difficulty factors reported by staff who maintain the forest or simply states the distance of each trail. Thus, many trail visitors feel a great gap between the given information and actual difficulties they experience. In this study, we tried to assess the degree of difficulty by actual energy consumption. Calculating the volumetric oxygen consumption (VOC) by the distance and gradient not only makes possible an absolute rating but a comparison among the trails as well. Also, it is highly effective to simply describe the exercise intensity of a certain trail. Further, it is easy to check the VOCs' changes by switching the start-end points of the same trail. Providing the trail information of VOCs by sections and directions, we expect to prevent heart-related accidents.

• Geophysics and Geophysical Exploration
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• v.13 no.4
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• pp.323-329
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• 2010

Three deconvolution methods were applied to stacked seismic data obtained to investigate gas-hydrates in the Ulleung Basin, East Sea: (1) minimum-phase spiking deconvolution, (2) minimum-phase spiking deconvolution using an averaged wavelet from all traces, and (3) deterministic deconvolution using a wavelet with phases computed from well-logs. We analyzed the resolving property of these methods for lithological boundaries. The first deconvolution method increases temporal resolution but decreases lateral continuity. The second method shows, in an overall sense, similar results to the spiking deconvolution using a minimum phase wavelet for each trace; however, it results in a more consistent and continuous bottom-simulating reflector (BSR) and better resolved sub-BSR reflectors. The results from the third method reveal more detailed internal structures of debris-flow deposits and increased continuity of reflectors; in addition, the seafloor reflection and the BSR appear to have changed to a zero-phase waveform. These properties help more precisely estimate the distribution and reserves of gas hydrates in the exploration area by improving analysis of facies and amplitude of the BSR.

• The Journal of the Convergence on Culture Technology
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• v.6 no.4
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• pp.761-766
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• 2020

Phenylamine derivatives are substances that have a biochemical action and are widely applied as psychotropic drugs. In particular, with regard to the quantitative analysis of substances such as ephedrine, amphetamine, pentermine, and dopamine, many previous studies such as electrochemical, vacuum ultraviolet method, and gas chromatography have been conducted. However, there have not been many studies on the structural characteristics of molecular units. Therefore, In this study, we used (HyperChem8.0's, HC) semi-empirical PM3 method to calculate the total energy, band gap, electrostatic potential, and net charge of ephedrine, amphetamine, pentamine and dopamine to investigate the chemical properties of each derivative according to the molecular structure change. The results showed that for total energy -43,171.8, -32,9538.3, -36,407.3 and -43,061.2 Kcal/mol, respectively, while for band gaps, 10.16379377, 9.9531666, 9.7878002 and 9.0589282 eV. Also, for electrostatic potentials, 1.301~-0.045, 1.694~0.299, 0.694~-0.158 and 1.587~-0.048 respectively. Finally, looking at the distribution of net charges, the oxygen atoms, nitrogen atoms and carbon atoms were -0.312~-0.242, -0.161~-0.051 and +0.13~-0.12 respectively. These results are expected to lead to chemical action centered on phenyl radicals and oxygen and nitrogen atoms common to phenethylamine derivatives.