• Title/Summary/Keyword: energy gap

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Thermal Design of High Power Semiconductor Using Insulated Metal Substrate (Insulated Metal Substrate를 사용한 고출력 전력 반도체 방열설계)

  • Bongmin Jeong;Aesun Oh;Sunae Kim;Gawon Lee;Hyuncheol Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.1
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    • pp.63-70
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    • 2023
  • Today, the importance of power semiconductors continues to increase due to serious environmental pollution and the importance of energy. Particularly, SiC-MOSFET, which is one of the wide bandgap (WBG) devices, has excellent high voltage characteristics and is very important. However, since the electrical properties of SiC-MOSFET are heatsensitive, thermal management through a package is necessary. In this paper, we propose an insulated metal substrate (IMS) method rather than a direct bonded copper (DBC) substrate method used in conventional power semiconductors. IMS is easier to process than DBC and has a high coefficient of thermal expansion (CTE), which is excellent in terms of cost and reliability. Although the thermal conductivity of the dielectric film, which is an insulating layer of IMS, is low, the low thermal conductivity can be sufficiently overcome by allowing a process to be very thin. Electric-thermal co-simulation was carried out in this study to confirm this, and DBC substrate and IMS were manufactured and experimented for verification.

Effect of Sn Doping on the Thermoelectric Properties of P-Type Mg3Sb2 Synthesized by Controlled Melting, Pulverizing Followed by Vacuum Hot Pressing

  • Rahman, Md. Mahmudur;Kim, Il-Ho;Ur, Soon-Chul
    • Korean Journal of Materials Research
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    • v.32 no.3
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    • pp.132-138
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    • 2022
  • Zintl phase Mg3Sb2 is a promising thermoelectric material in medium to high temperature range due to its low band gap energy and characteristic electron-crystal phonon-glass behavior. P-type Mg3Sb2 has conventionally exhibited lower thermoelectric properties compared to its n-type counterparts, which have poor electrical conductivity. To address these problems, a small amount of Sn doping was considered in this alloy system. P-type Mg3Sb2 was synthesized by controlled melting, pulverizing, and subsequent vacuum hot pressing (VHP) method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to investigate phases and microstructure development during the process. Single phase Mg3Sb2 was successfully formed when 16 at.% of Mg was excessively added to the system. Nominal compositions of Mg3.8Sb2-xSnx (0 ≤ x ≤ 0.008) were considered in this study. Thermoelectric properties were evaluated in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity. A peak ZT value ≈ 0.32 was found for the specimen Mg3.8Sb1.994Sn0.006 at 873 K, showing an improved ZT value compared to intrinsic one. Transport properties were also evaluated and discussed.

Effects of deposition temperature on the properties of SnO2:Eu3+ thin films grown by radio-frequency magnetron sputtering (증착 온도가 라디오파 마그네트론 스퍼터링으로 성장한 SnO2:Eu3+ 박막의 특성에 미치는 영향)

  • Shinho Cho
    • Journal of Surface Science and Engineering
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    • v.56 no.3
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    • pp.201-207
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    • 2023
  • Eu3+-doped SnO2 (SnO2:Eu3+) phosphor thin films were grown on quartz substrates by radio-frequency magnetron sputtering. The deposition temperature was varied from 100 to 400 ℃. The X-ray diffraction patterns showed that all the thin films had two mixed phases of SnO2 and Eu2Sn2O7. The 880 nmthick SnO2:Eu3+ thin film grown at 100 ℃ exhibited numerous pebble-shaped particles. The excitation spectra of SnO2:Eu3+ thin films consisted of a strong and broad peak at 312 nm in the vicinity from 250 to 350 nm owing to the O2--Eu3+ charge transfer band, irrespective of deposition temperature. Upon 312 nm excitation, the SnO2:Eu3+ thin films showed a main emission peak at 592 nm arising from the 5D07F1 transition and a weak 615 nm red band originating from the 5D07F2 transition of Eu3+. As the deposition temperature increased, the emission intensities of two bands increased rapidly, approached a maximum at 100 ℃, and then decreased slowly at 400 ℃. The thin film deposited at 200 ℃ exhibited a band gap energy of 3.81 eV and an average transmittance of 73.7% in the wavelength range of 500-1100 nm. These results indicate that the luminescent intensity of SnO2:Eu3+ thin films can be controlled by changing the deposition temperature.

Theoretical Study on Structural Properties of Triptan Derivatives (트립탄 유도체의 구조적 특성에 관한 이론적 연구)

  • Chul Jae Lee;Ki Young Nam
    • The Journal of the Convergence on Culture Technology
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    • v.9 no.4
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    • pp.503-508
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    • 2023
  • Tryptane derivatives are substances that treat acute migraines, and many studies have been conducted on analysis methods such as chromatography, electrochemistry, spectroscopy, and capillary electrophysiology. Recently, analytical chemists have become more interested in drug analysis and solving fundamental problems of biological importance. Therefore, in this study, the chemical properties of each derivative were investigated by calculating the total energy, band gap, electrostatic potential, and charge of Sumatriptan, Lizatriptan, Naratriptan, and Eletriptan using HyperChem8.0's semi-empirical PM3 method. As a result of this study, in the case of Sumatriptan, Naratriptan, and Eletriptan, chemical reactions are expected to proceed centering on oxygen and nitrogen atoms bonded to sulfur atoms. In addition, in the case of Rizatriptan without a sulfur atom, it was shown that the chemical reaction proceeds at the 17th and 19th nitrogens of the 5-membered heterocyclic compound.

Conceptualizing a Strategic Facilities Management Decision Framework for Heritage Building Maintenance Management

  • Adegoriola, Mayowa I.;Yung, Esther H.K.;Lai, Joseph H.K.;Chan, Edwin H.W.
    • International conference on construction engineering and project management
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    • 2022.06a
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    • pp.992-1000
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    • 2022
  • Heritage buildings (HBs) as structures with historical and architectural relevance that form an integral part of contemporary society. HBs deserve to be protected for as long as possible to retain their significance. Therefore, prioritizing HB maintenance management (HBMM) is pertinent. However, the decision-making process of HBMM can be relatively daunting. The decision-making challenge may be attributed to the multiple 'stakeholders' expectation and requirement which needs to be met. To this end, professionals in the built environment have identified the need to apply the strategic concept of facilities management (FM) in decision making. However, studies exploring the application of FM in decision-making seem lacking. To bridge this gap, this study focuses on developing a framework for strategic decision-making HBMM, which helps achieve HBMM sustainability. At the study's inception, relevant works of literature in the domains of HBMM and FM were conducted. This review helped identify contemporary maintenance practices and their applicability to HBMM. Afterward, a conceptual framework to aid decision-making in HBMM was developed. This framework integrated the concept of FM scope (people, place, process, and technology) while ensuring that decisions and plans were made at strategic, tactical, and operational levels. The conceptual framework presents a holistic guide for professionals in HBMM to ensure that decision processes and outcomes are practical and efficient. It also contributes to the existing body of knowledge on the integration of FM in HBMM. Furthermore, it will help achieve HB sustainability through an effective decision-making process.

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Partial Substitution of Copper with Nickel for the Superconducting Bismuth Compound and Its Effect on the Physical and Electrical Properties

  • Kareem Ali Jasim;Riyam Abd Al-Zahra Fadil;Kassim Mahdi Wadi;Auday Hattem Shaban
    • Korean Journal of Materials Research
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    • v.33 no.9
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    • pp.360-366
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    • 2023
  • This study focuses on how the partial substitution of copper by nickel nanoparticles affects the electrical and structural properties of the Bi2Ba2Ca2Cu2.9Ni0.1O10+δ, Bi2Ba2Ca2Cu2.8Ni0.2O10+δ and Bi2Ba2Ca2Cu2.6Ni0.4O10+δ compounds. Approximate values of crystallization size and crystallization percentage for the three compounds were calculated using the Scherer, modified Scherer, and Williamson-Hall methods. A great similarity was observed in the crystal size values from the Scherer method, 243.442 nm, and the Williamson-Hall method, 243.794 nm for the second sample. At the same time this sample exhibited the highest crystal size value for the three methods. In the examination of electrical properties, the sample with 0.1 partial substitution, Bi2Ba2Ca2Cu2.9Ni0.1O10+δ was determined to be the best with a critical temperature of 100 K and an energy gap of 6.57639 × 10-21 MeV. Using the SEM technique to analyze the structural morphology of the three phases, it was discovered that the size of the granular forms exceeds 25 nm. It was determined that the samples' shapes alter when nickel concentration rises. The patterns that reveal the distribution of the crystal structure also exhibit clear homogeneity.

Effects of Annealing Temperature on the Structural, Morphological, and Luminescent Properties of SrWO4:Sm3+ Thin Films (열처리 온도가 SrWO4:Sm3+ 박막의 구조, 표면, 발광 특성에 미치는 효과)

  • Shinho Cho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.6
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    • pp.582-587
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    • 2023
  • The effects of the annealing temperature on the structural, morphological, and luminescent properties of SrWO4:Sm3+ thin films grown on quartz substrates by radio-frequency magnetron sputtering were investigated. The thin films were annealed at various annealing temperatures for 20 min in a rapid thermal annealer after growing the thin films. The experimental results showed that the annealing temperature has a significant effect on the properties of the SrWO4:Sm3+ thin films. The crystal structure of the as-grown SrWO4:Sm3+ thin films was transformed from amorphous to crystalline after annealing at 800℃. The preferred orientation along (112) plane and a significant increase in average grain size by 820 nm were observed with increasing the annealing temperature. The average optical transmittance in the wavelength range of 500~1,100 nm was decreased from 72.0% at 800℃ to 44.2% at an annealing temperature of 1,000℃, where the highest value in the photoluminescence intensity was obtained. In addition to the red-shift of absorption edge, a higher annealing temperature caused the optical band gap energy of the SrWO4:Sm3+ thin films to fall rapidly. These results suggest that the structural, morphological, and luminescent properties of SrWO4:Sm3+ thin films can be controlled by varying annealing temperature.

Dependence of Electrical and Optical Properties on Substrate Temperatures of AZO Thin Films (기판온도에 의한 AZO 박막의 전기적 및 광학적 특성 변화)

  • Seong-Jun Kang;Yang-Hee Joung
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.6
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    • pp.1067-1072
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    • 2023
  • We prepared AZO (Al2O3 : 3 wt %) thin films according to the substrate temperature using the pulsed laser deposition method and the structural, electrical, and optical properties of the thin films were investigated. The AZO thin film deposited at 400℃ showed the best (002) orientation and the FWHM was 0.38°. As a result of the investigation of electrical properties, it was confirmed that the carrier concentration and mobility increased and the resistivity decreased as the substrate temperature increased. The average transmittance in the visible light region showed a high value of 85% or more regardless of the substrate temperature. The Burstein-Moss effect, in which the carrier concentration would increase with increasing substrate temperature thereby widening the energy band gap, was also observed. The resistivity and the figure of merit of the AZO thin film deposited at a substrate temperature of 400℃ were 6.77 × 10-4 Ω·cm and 1.02 × 104-1·cm-1 respectively, showing the best value.

Effect of Working Pressure on the Structural, Electrical, and Optical Properties of GTZO Thin Films (공정압력이 GTZO 박막의 구조적, 전기적 및 광학적 특성에 미치는 영향)

  • Byeong-Kyun Choi;Yang-Hee Joung;Seong-Jun Kang
    • The Journal of the Korea institute of electronic communication sciences
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    • v.19 no.1
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    • pp.39-46
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    • 2024
  • In this study, GTZO(Ga-Ti-Zn-O) thin films were deposited at various working pressures (1~7mTorr) by RF magnetron sputtering to examine the structural, electrical, and optical properties. All GTZO thin films exhibited c-axis preferential growth regardless of working pressure, the GTZO thin film deposited at 1mTorr showed the most excellent crystallinity having 0.38˚ of FWHM. The average transmittance in the visible light region (400~800nm) showed 80% or more regardless of the working pressure. We could observed the Burstein-Moss effect that carrier concentration decrease with the increase of working pressure and thus the energy band gap is narrowed. Figure of merits of GTZO thin film deposited at 1mTorr showed the highest value of 9.08 × 103 Ω-1·cm-1, in this case resistivity and average transmittance in the visible light region were 5.12 × 10-4 Ω·cm and 80.64%, respectively.

Green synthesis of Lead-Nickel-Copper nanocomposite for radiation shielding

  • B.M. Chandrika;Holaly Chandrashekara Shastry Manjunatha;R. Munirathnam;K.N. Sridhar;L. Seenappa;S. Manjunatha;A.J. Clement Lourduraj
    • Nuclear Engineering and Technology
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    • v.55 no.12
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    • pp.4671-4677
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    • 2023
  • For the first time Pb, Ni, and Cu nanocomposites were synthesized by versatile solution combustion synthesis using Aloevera extract as a reducing agent, to study the potential applications in X-ray/gamma, neutron, and Bremsstrahlung shielding. The synthesized Lead-Nickel-Copper (LNC) nanocomposites were characterized by PXRD, SEM, UV-VIS, and FTIR for the confirmation of successful synthesis. PXRD analysis confirmed the formation of multiphase LNC NCs and the Scherrer equation and the W-H plot gave the average crystal sizes of 19 nm and 17 nm. Surface morphology using SEM and EDX confirmed the presence of LNC NCs. Strong absorption peaks were analyzed by UV visible spectroscopy and the direct energy gap is found to be 3.083 eV. Functional groups present in the LNC NCs were analyzed by FTIR spectroscopy. X-ray/gamma radiation shielding properties were measured using NaI(Tl) detector coupled with MCA. It is found to be very close to Pb. Neutron shielding parameters were compared with traditional shielding materials and found LNC NCs are better than lead and concrete. Secondary radiation shielding known as Bremsstrahlung shielding characteristics also studied and found that LNC NCs are best in secondary radiation shielding. Hence LNC NCs find shielding applications in ionizing radiation such as X-ray/gamma and neutron radiation.