• Nuclear Engineering and Technology
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• 제48권4호
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• pp.847-858
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• 2016

An overview is given on the work of the Laboratory of Nuclear Energy Systems at ETH, Zurich (ETHZ) and of the Laboratory of Thermal Hydraulics at Paul Scherrer Institute (PSI), Switzerland on tight-lattice bundles. Two-phase flow in subchannels of a tight triangular lattice was studied experimentally and by computational fluid dynamics simulations. Two adiabatic facilities were used: (1) a vertical channel modeling a pair of neighboring sub-channels; and (2) an arrangement of four subchannels with one subchannel in the center. The first geometry was equipped with two electrical film sensors placed on opposing rod surfaces forming the subchannel gap. They recorded 2D liquid film thickness distributions on a domain of $16{\times}64$ measuring points each, with a time resolution of 10 kHz. In the bubbly and slug flow regime, information on the bubble size, shape, and velocity and the residual liquid film thickness underneath the bubbles were obtained. The second channel was investigated using cold neutron tomography, which allowed the measurement of average liquid film profiles showing the effect of spacer grids with vanes. The results were reproduced by large eddy simulation + volume of fluid. In the outlook, a novel nonadiabatic subchannel experiment is introduced that can be driven to steady-state dryout. A refrigerant is heated by a heavy water circuit, which allows the application of cold neutron tomography.

• Korean Journal of Materials Research
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• 제15권8호
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• pp.491-495
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• 2005

(Zn,Mg)O (ZMO) thin films doped with Ga $(0\~0.03mol\%)$ in the target source were prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$, and the effect of Ga contents on the properties of the electrical, optical and crystal properties of the deposited films was investigated. From X-ray diffraction patterns, ZMO film doped with $0.02 mol\%$ Ga showed crystal structure with c-axis preferred orientation, showing only the (0002) and (0004) diffraction peaks. In contrast, ZMO film doped with $Ga=0.03 mol\%$ showed a randomly oriented crystal structure. All the samples were highly transparent, showing the transmittance values of above $85\%$ in the visible region. For all the Ga doped ZMO films, the value of energy band gap was found to be about 3.5 eV, regardless of their Ga contents. From the Hall measurements, the resistivity and the carrier density for the ZMO film doped with $0.01 mol\%$ Ga were about $5\times10^{-4}\Omega-cm$ and $2\times10^{21}cm^{-3}$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.461-461
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• 2013

Over the last decade, zinc oxide (ZnO) thin films have attracted considerable attention owing to large band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature [1-3]. Recent interest in ZnO related researches has been switched into the fabrication and characterization of low-dimensional nanostructures, such as nano-wires and nano-dots that can be applicable to manufacture the optoelectronic devices such as ultraviolet lasers, light-emitting-diodes and detectors. Since the optical properties of ZnO nano-structures might be distinct from those of bulk materials or thin films, the low-dimensional phenomena should be examined further. In order to utilize such advanced optoelectronic devices, one of the challenges is how to control the surface state related emissions that are drastically increased with increasing the density of the nano-structures and the surface-to-volume ratio. This paper reports the synthesis and characterization of self-assembled ZnO hexagonal nano-disks grown by radio-frequency magnetron sputtering. X-ray diffraction data and scanning electron microscopy data showed that ZnO hexagonal nano-disks were nucleated on top of the flat surfaces as the film thickness reached to 1.56 ${\mu}m$ and then the number of nano-disks increased with increasing the film thickness. The lateral size of hexagonal nano-disks was ~720 nm and height was ~74 nm. The strong photo luminescence spectra obtained at 10 K was also observed, which was assigned to a surface exciton emission at 3.3628 eV arising from the surface sites of hexagonal nano-disks.

• Journal of Korean Society for Atmospheric Environment
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• 제17권E3호
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• pp.91-99
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• 2001

Plasma reactor was used to generate a high potential difference between two surfaces of concentric pyrex tubes by electrical current. The annular gap of the reactor was calculated by trial and error from the breakdown voltage equation and set at 0.45 cm. The overall objective of this research was to know the effects of the frequency, humidity, and residence time on the formation of nitrogen oxides in a plasma reactor. The primary voltage varied from 50 to 90 volts and the frequency was varied in increments of 10 Hz from 60 to 650 Hz at the primary voltage of 90. The increase in the secondary voltage was not linear but exponential at high frequencies. At a maximum concentration of about 745 ppm, the frequency and secondary voltage was 600 Hz and 4,200 volts, respectively. All tests for the effects of humidity on NO$_{x}$ production were performed at the optimal setting of 90 colts and 600 Hz frequency. Since the NO$_{x}$ production was not an one dimensional phenomenon, competing reactions were assumed to occur in the discharge chamber. The sharp peak concentration of 1,810 ppm was observed at 38% of relative humidity, The enhanced production was choked off, and the production rate rapidly dropped to 3 ppm at above 40% of relative humidity. It is assumed that the corona attacks the most vulnerable molecules in the reaction chamber before attacking other more lightly bonded molecules, possibly at humidities above 38% and the optimized 90 volt setting. Thus, there was not enough energy left after attacking all water molecules to decompose an appreciable amount of $N_2$. If nitrogen breakdown does not occur, then oxides of nitrogen are not likely to be produced.ced.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제3권2호
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• pp.140-148
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• 1993

In this study, the electrical and optical properties of amorphous, crystallization and thin film of As-Ge-Se Chalcogenide System was investigated. Typical composition of this material has $As_{20~50}Se_{40~70} and Ge_{10~40}$ at%. Materials having Se was fixed to 40 at% and As was above 30 at% much more increased the electrical conductivity. After crystallization at the temperature of $476^{\circ}C$ for 3 hour was showed the best electrical conductivity of 1.74E-13$(\Omega cm)^{-l}$. And the main crystalline phase of this sample can be investigated using the mixed crystalline, i.e, $GeSe_2 and As_2Se_3$ phases. The thin film shows the optical absorption coefficient in the range $2{times}10^3 to 7{times}10^4$ and the optical energy gap of 1.85eV.

• KSCE Journal of Civil and Environmental Engineering Research
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• 제31권6A호
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• pp.425-433
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• 2011

In this study, in order to investigate the wave-induced buoyancy effects, experimental studies were conducted on pontoon-type floating structures. A series of small-scale tests with various wave cases were performed on the pontoon models. A total of four small-scale pontoon models with different lateral shapes and bottom details were fabricated and tested under the five different wave cases. Six hydraulic pressure gauges were attached to the bottom surfaces of the pontoon models and the wave-induced hydraulic pressure was measured during the tests. Finally, hydraulic pressures subjected to the bottoms of the pontoon models were compared with each other. As the results of this study, it was found that whereas the waffled bottom shape hardly influenced the wave-induced hydraulic pressure, the hybrid lateral shape significantly influenced the wave-induced hydraulic pressure subjected on the bottoms of floating structures. The air gap effects of the hybrid shape contribute to decreasing the wave-induced hydraulic pressure due to absorption of wave impact energy. Compared with box type, the hydraulic pressures of the hybrid type were about 83% at the bow, 74% at the middle, and 53% at the stern.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제11권6호
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• pp.274-284
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• 2001

A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

• Bulletin of the Korean Chemical Society
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• 제31권10호
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• pp.2849-2853
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• 2010

A method to improve the photocatalytic activity of titanium dioxide by modification with a sensitizer and a metal oxide is proposed. To achieve this goal, we used metal oxides as dopants. In particular, $CaWO_4$ and $Gd_2O_2S$:Tb were used because their 2.6 eV and 2.2 eV band gap energy and optical properties have a large positive effect on photocatalysis. The improvement in the photocatalytic activity of $TiO_2$ modified with $Gd_2O_2S$:Tb under ultraviolet light irradiation is described in a previous study. The present work focuses on the sensitization of metal oxide-modified $TiO_2$. Having observed the ultraviolet-visible absorption spectra of 3,4,9,10-Perylenetetracarboxylic diimide in the wide visible-light region from 400 nm to 650 nm and the broad peaks in its photoluminescence spectra at 695 nm and 717 nm, we decided to use this perylene dye to sensitize modified $TiO_2$ to enhance its activity as a visible-light harvesting photocatalyst. We also explored the positive effects thin-film surface changes stemming from ultraviolet pre-treatment have on photocatalytic activity. Finally, we subjected several metal oxide-modified $TiO_2$ products sensitized by the perylene dye to ultraviolet pre-treatment, obtaining the most active photocatalysts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.131-131
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• 2008

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used a Monte-Carlo method. We studied the effect of channeling by Al implantation simulation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the Al distribution in 4H-SiC through the variation of the implantation energies and the corresponding ratio of the doses. The implantation energies controlled 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2\times10^{14}$ to $1\times10^{15}cm^{-2}$. In the simulation results, the Al ion distribution was deeper as increasing implantation energy and the doping level increased as increasing implantation doses. After the post-implantation annealing, the electrical properties of Al-implanted p-n junction diode were investigated by SILV ACO ATLAS numerical simulator.

• Smart Structures and Systems
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• 제25권1호
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• pp.65-80
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• 2020

In order to protect a structure over its full life cycle, a novel tuned mass damper (TMD), the so-called semi-active eddy current pendulum tuned mass damper (SAEC-PTMD), which can retune its frequency and damping ratio in real-time, is proposed in this study. The structural instantaneous frequency is identified through a Hilbert-Huang transformation (HHT), and the SAEC-PTMD pendulum is adjusted through an HHT-based control algorithm. The eddy current damping parameters are discussed, and the relationship between effective damping coefficients and air gaps is fitted through a polynomial function. The semi-active eddy current damping can be adjusted in real-time by adjusting the air gap based on the linear-quadratic-Gaussian (LQG)-based control algorithm. To verify the vibration control effect of the SAEC-PTMD, an idealized linear primary structure equipped with an SAEC-PTMD excited by harmonic excitations and near-fault pulse-like earthquake excitations is proposed as one of the two case studies. Under strong earthquakes, structures may go into the nonlinear state, while the Bouc-Wen model has a wild application in simulating the hysteretic characteristic. Therefore, in the other case study, a nonlinear primary structure based on the Bouc-Wen model is proposed. An optimal passive TMD is used for comparison and the detuning effect, which results from the cumulative damage to primary structures, is considered. The maximum and root-mean-square (RMS) values of structural acceleration and displacement time history response, structural acceleration, and displacement response spectra are used as evaluation indices. Power analyses for one earthquake excitation are presented as an example to further study the energy dissipation effect of an SAECPTMD. The results indicate that an SAEC-PTMD performs better than an optimized passive TMD, both before and after damage occurs to the primary structure.