• Title/Summary/Keyword: energy gap

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Optical properties of Stibenequinone derivatives in PVK organic electroluminescence (PVK 유기 EL에서 Stibenequinone 유도체의 광학적 특성)

  • Cho, Chong-Rae;You, Jung-Yi;Yang, Jong-Heon;Shin, Sang-Sik;Son, Se-Mo;Chung, Su-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1047-1049
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    • 2003
  • Stibenequinone(SQ) derivative which was electronic transportation materials in Poly(N-vinylcarbazole) (PVK)-based on organic EL and an optical characteristic of organic EL which is mentioned previously was investigated. The Photoluminescence highest pick with blending TBSQ with PVK was shifted from 439nm to 517nm. This result indicates that an energy gap of a PVK/TBSQ blended sample is less than an energy gap of PVK. According to the electrochemistry characteristic, the ionization energy(Ip) and the electro affinity(Ea) decreased from 5.79eV to 5.63eV and 2.23eV to 2.63eV, respectively.

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Binding energy study from photocurrent signal in HgCdTe layers

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.379-379
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    • 2010
  • $Hg_{1_x}Cd_xTe$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5\;{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

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Estimation of Output Voltage and Magnetic Flux Density for a Wireless Charging System with Different Magnetic Core Properties

  • Park, Ji Hea;Kim, Sang Woo
    • Journal of Magnetics
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    • v.18 no.2
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    • pp.105-110
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    • 2013
  • The design model and key parameters of the material design for the control of induced magnetic flux at the near-field and efficient power transfer in a modified wireless power transfer (WPT) system with a large air gap of wireless electric vehicles were investigated through analytical simulations for magnetic vector and time-domain transient analysis. Higher saturation magnetic core with low core loss induced a stronger vertical magnetic field by the W-type primary coil in the WPT system with a gap of 20 cm at 20 kHz, which is shown from the vector potentials of the magnetic induction. The transient analysis shows that the higher magnetic fluxes through the pick-up cores lead to a linear increment of the alternating voltage with a sinusoidal waveform in the non-contact energy transfer system.

Properties of Inclined Silicon Carbide Thin Films Deposited by Vacuum Thermal Evaporation

  • Hamadi Oday A.;Yahia Khaled Z.;Jassim Oday N.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.3
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    • pp.182-186
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    • 2005
  • In this work, thermal evaporation system was employed to deposit thin films of SiC on glass substrates in order to determine the parameters of them. Measurements included transmission, absorption, Seebak effect, resistivity and conductivity, absorption coefficient, type of energy band-gap, extinction coefficient as functions of photon energy and the effect of increasing film thickness on transmittance. Results explained that SiC thin film is an n-type semiconductor of indirect energy band-gap of ${\sim}3eV$, cut-off wavelength of 448nm, absorption coefficient of $3.4395{\times}10^{4}cm^{-1}$ and extinction coefficient of 0.154. The experimental measured values are in good agreement with the typical values of SiC thin films prepared by other advanced deposition techniques.

Impact of Hull Condition and Propeller Surface Maintenance on Fuel Efficiency of Ocean-Going Vessels

  • Tien Anh Tran;Do Kyun Kim
    • Journal of Ocean Engineering and Technology
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    • v.37 no.5
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    • pp.181-189
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    • 2023
  • The fuel consumption of marine diesel engines holds paramount importance in contemporary maritime transportation and shapes energy efficiency strategies of ocean-going vessels. Nonetheless, a noticeable gap in knowledge prevails concerning the influence of ship hull conditions and propeller roughness on fuel consumption. This study bridges this gap by utilizing artificial intelligence techniques in Matlab, particularly convolutional neural networks (CNNs) to comprehensively investigate these factors. We propose a time-series prediction model that was built on numerical simulations and aimed at forecasting ship hull and propeller conditions. The model's accuracy was validated through a meticulous comparison of predictions with actual ship-hull and propeller conditions. Furthermore, we executed a comparative analysis juxtaposing predictive outcomes with navigational environmental factors encompassing wind speed, wave height, and ship loading conditions by the fuzzy clustering method. This research's significance lies in its pivotal role as a foundation for fostering a more intricate understanding of energy consumption within the realm of maritime transport.

Effect of carrier concentration of ITO films on Quantum Efficiency Window in Heterojunction Silicon Solar Cells

  • Kim, Hyunsung;Kim, Sangho;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.314-314
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    • 2016
  • In this paper, the effects of carrier concentration on dielectric constant of ITO films were investigated by spectroscopic ellipsometry. From SE results, we find the pronounced shift of the ${\varepsilon}1$ peaks toward high energy with concentration; while contrarily, the ${\varepsilon}2$ values at low energy region increases with decreasing concentration. These shifts are attributed to the Burstein-Moss and free-carrier absorption effects within ITO films. With increases carrier concentration, the values of extinction coefficients show quite different behaviors in range of wavelength from 200 to 1200 nm. The reduction in k at ${\lambda}{\leq}500nm$, while increasing at ${\lambda}{\geq}500nm$ was observed. The QE of HJ solar cells behaviors can be roughly classified into two regions: short-wavelengths (${\leq}650nm$) and long-wavelengths region (${\geq}650nm$). With increasing carrier concentration as well as energy band gap, QE shows improvement at short-wavelength, while at long-wavelength QE shows opposite trend. Widening band gap energy due to Burstein-Moss shift is the key to improve QE in short-wavelength; simultaneously FCA effect due to optical scattering is attributed to the reduction in QE at long-wavelength. In spite of band gap extension, Jsc calculated from QE decreases from 34.7 mA/cm2 to 33.2 mA/cm2 with increasing carrier concentration. It demonstrated that FCA effect may more govern Jsc in the HJ solar cells.

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GaN를 기반으로 하는 고분자 MDMO-PPV의 두께 변화와 온도에 따른 Photovoltaics의 효율 측정

  • Lee, Sang-Deok;Lee, Chan-Mi;Gwon, Dong-O;Sin, Min-Jeong;Lee, Sam-Nyeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.305-305
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    • 2013
  • 태양전지는 무기태양전지와 유기태양전지 등이 연구 되고 있는데 [1] 그 중 유기물질의 장점(높은 수율, solution phase processing, 저비용으로 전력 생산)과 무기재료의 장점(높은 전자 이동도, 넓은 흡수 범위, 우수한 환경 및 열 안정성)을 융합함으로써 장기적 구조안정성의 확보와 광전변환의 고 효율화를 동시에 달성하기 위한 유기무기 하이브리드 태양전지가 최근 큰 관심을 끌고 있다[2]. 본 연구에서는 hybrid photovoltaics에 유기물 MDMO-PPV와 전도성 고분자 PEDOT:PSS를 무기물 GaN 위에 spin coating 하여 두께에 다른 효율을 측정하였다. 유기물 MDMO-PPV는 p-형으로 클로로벤젠, 톨루엔과 같은 유기 용매에 잘 녹으며 HOMO 5.33eV, LUMO 2.97eV, energy band gap 2.4eV이며 99.5%의 순도 물질을 사용하였다. 또한 정공 수송층(hole transport layer, HTL)으로 PEDOT:PSS를 사용하였으며, HOMO 5.0eV, LUMO 3.6eV, energy band gap 1.4eV를 가지며 증류수나 에탄올과 같은 수용성 용매에 잘 녹는 특성을 가지고 있다. 무기물은 III-V 족 물질 n-GaN(002)을 사용하였고 valence band energy 1.9eV, conduction band energy 6.3eV, energy band gap 3.4eV, 높은 전자 이동도와 높은 포화 속도, 광전자 소자에 유리한 광 전기적 특성을 가지고 있다. 기판으로는 GaN와 격자 부정합도와 열팽창계수 부정합도가 큰 Sapphire (Al2O3) 이종 기판을 사용하였다. 전극으로 Au를 사용하였으며 E-beam증착하였다. Reflector로서 Al를 thermal evaporator로 증착하였다 [3]. 실험 과정은 두께에 따른 효율을 알아보기 위해 MDMO-PPV를 900~1,500 rpm으로 spin coating 하였고, 열처리에 따른 효율을 알아보기 위해 열처리 온도 조건을 $110{\sim}170^{\circ}C$의 변화를 주었다. FE-SEM으로 표면과 단면을 관찰하였으며 J-V 특성을 알아보기 위해 각 샘플마다 solar simulator를 사용하여 측정하였고 그 결과를 논의하였다.

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The Physicochemical and Optical Characteristics of FeaSibCcHd Films (FeaSibCcHd 박막의 물리·화학 및 광학적 특성)

  • Kim, Kyung-soo;Jean, Bup-Ju;Jung, Il-Hyun
    • Applied Chemistry for Engineering
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    • v.10 no.1
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    • pp.105-111
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    • 1999
  • When the preparation method of iron silicide films possess the annealing process, the interfacial state of the films is not fine. The good quality films were obtained as the plasma was used without annealing processing. Since the injected precursors were various active species in the plasma state, the organic compound was contained in the prepared films. We confirmed the formation of Fe-Si bonds as well as the organic compound by Fe and Si vibration mode in Raman scattering spectrum at $250cm^{-1}$ and Ft-IR. Because of epitaxy growth being progressed by the high energy of plasma at the low temperature of substrate, iron silicide was epitaxially grown to ${\beta}$-phase that had lattice structure such as [220]/[202] and [115]. Band gap of the prepared films had value of 1.182~1.174 eV and optical gap energy was shown value of 3.4~3.7 eV. The Urbach tail and the sub-band-gap absorptions were appeared by organic compound in films. We knew that the prepared films by plasma were obtained a good quality films because of being grown single crystal.

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Optical Properties of Cdlnsub 2Ssub 4 and Cdlnsub 2Ssub 4 : $CdIn_2S_4$$CdIn_2S_4 : Co^{2+}$Single Crystals ($CdIn_2S_4$$CdIn_2S_4 : Co^{2+}$ 단결정의 광학적 특성)

  • Choe, Seong-Hyu;Bang, Tae-Hwan;Kim, Hyeong-Gon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.296-302
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    • 1999
  • $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$ singlecrystals of thenormal spinel structure were grown by the C.T.R. method. The optical energy band structure of these compounds had a indirect band gap at the fundamental optical absorption band edge. The direct and the indirect energy gaps are found to be 2.325 and2.179eV for $Cdln_2S_4$ , and 2.303 and 2.169eV for $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$ at 5K, respectivly. The fundamental absorption band edge of these single crystals shift to a shorter wavelength region with decreasing temperature, and the temperature dependence of the optical energy gaps in these compounds satisfy Varshni equation. The Varshni constants$\alpha and \beta$ of the direct energy gap are given by $13.39{\times}10_{-4}eV/K$ and 509 K for $Cdln_2S_4$ and $29.73{\times}10_{-4} eV/K$ and 1398K for $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$. The Varshni constants ${\alpha}and {\beta}$ of the indirect energy gap are given by 9.68${\times}10^{-4}$ eV/K 308K for $Cdln_2S_4$ and $13.33{\times}10_{-4}eV/K$ and 440K for $CdIn_2S_4 : Co^{2+}$ respectivly. The impurity optical absorption peaks due to cobalt dopant are observed in $CdIn_2S_4 : Co^{2+}$ single crystal. These impurity optical absorption peaks can be attributed to the electronic transitions between the split energy levels of $Co_{2+}$ ions located at $T_d$ symmetry site of $Cdln_2S_4$ host lattece.

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The Property of TiO2 Powder Made with a 1000rpm MA Machine (1000rpm의 MA 장치로 TiO2 합성 시 형성된 분말의 특성)

  • Lee, Yong-Bok;Kwon, Jun-Hyun
    • Transactions of the Korean hydrogen and new energy society
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    • v.22 no.3
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    • pp.349-356
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    • 2011
  • During the process of synthesis of $TiO_2$ powders using a high-speed planetary milling machine, Fe metallic powders were created which could be dissolved in sulfuric acid solution. With adding $NH_4OH$ solution to the $TiO_2$ powder, it was found that the crystal structure of the synthesized powder did not change and the crystal size decreased slightly. However, when the sulfur powder is mixed with $TiO_2$, the crystal structure of the MA powder was changed from anatase into rutile phase and its size decreased significantly which is in the order of nm in diameter. In case of mechanical alloying with $TiO_2$ powder only, the crystal structure of the powder was transformed into rutile phase and its size was greatly reduced into several nm. Because its size becomes fine, the energy band gap of its rutile phase is larger than that of bulk states (3.0eV).