• Current Photovoltaic Research
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• 제2권2호
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• pp.41-47
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• 2014

Extensive investigation on silicon based thin film reveals a wide range of film characteristics, from low optical gap to high optical gap, from amorphous to micro-crystalline silicon etc. Fabrication of single junction, tandem and triple junction solar cell with suitable materials, indicate that fabrication of solar cell of a relatively moderate efficiency is possible with a better light induced stability. Due to these investigations, various competing materials like wide band gap silicon carbide and silicon oxide, low band gap micro-crystalline silicon and silicon germanium etc were also prepared and applied to the solar cells. Such a multi-junction solar cell can be a technologically promising photo-voltaic device, as the external quantum efficiency of such a cell covers a wider spectral range.

• 한국정밀공학회지
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• 제14권12호
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• pp.17-23
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• 1997

A 3-D vision system is developed to evaluate blanks' line up and monitor gap and thickness difference between blanks in tailored blank welding system. A structured lighting method is used for 3-D vision recognition. Images of sheared portion in blanks are irregular according to roughness of blank surface, shape of sheared geometry and blurring. It is difficult to get accurate and reliable informations in the case of using binary image processing or contour detection techniques in real time for such images. We propoe a new energy integration method robust to blurring and changes of illumination. The method is computationally simple, and uses feature restoration concept, different to another digital image restoration methods which aim image itself restoration and may be used in conventional applications using structured line lighting technique. Experimental results show this system measuring repeatability is .+-. pixel for gap and thickness difference in static and dynamic tests. The data are expected to be useful for preview gap control.

• Bulletin of the Korean Chemical Society
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• 제35권5호
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• pp.1523-1528
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• 2014

Silicon quantum dots (Si QDs) were synthesized by etching silicon nanopowder with aqueous hydrofluoric acid (HF) and nitric acid ($HNO_3$). Then, the hydride-terminated Si QDs (H-Si QDs) were functionalized by 1- octadecene (ODE). By only controlling the etching time, the maximum luminescence peak of octadecylterminated Si QDs (ODE-Si QDs) was tuned from 404 nm to 507 nm. The average optical gap was increased from 2.60 eV (ODE-Si QDs-5 min) for 5 min of etching to 3.20 eV (ODE-Si QDs-15 min) for 15 min of etching, and to 3.40 eV (ODE-Si QDs-30 min) for 30 min of etching. The electron affinities (EA), ionization potentials (IP), and quasi-particle gap (${\varepsilon}^{qp}_{gap}$) of the Si QDs were determined by cyclic voltammetry (CV). The quasi-particle gaps obtained from the CV were in good agreement with the average optical gap values from UV-vis absorption. In the case of the ODE-Si QDs-30 min sample, the difference between the quasi-particle gap and the average optical gap gives the electron-hole Coulombic interaction energy. The additional electronic levels of the ODE-Si QDs-30 min and ODE-Si QDs-15 min samples determined by the CV results are interpreted to have originated from the Si=O bond terminating Si QD.

• Bulletin of the Korean Chemical Society
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• 제31권2호
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• pp.497-499
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• 2010

• Progress in Superconductivity
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• 제3권2호
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• pp.146-150
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• 2002

We performed the point contact spectroscopy on newly discovered superconductor $MgB_2$ thin films with Au tip. In the point contact spectroscopy of the metallic Sharvin limit, the differential conductance below the gap is twice as that above the gap by virtue of Andreev Reflection. After some surface cleaning processes of sample preparation such as ion-milling and wet etching, the obtained dI/dV versus voltage curves are relatively well fitted to the Blonder-Tinkham-Klapwijk (BTK) formalism. Gaps determined by this technique were distributed in the range of 3meV~ 8meV with the BCS value of 5.9meV in the weak coupling limit. We attribute these discrepancies to the symmetry of the gap parameter and the degradation of the surface of the sample. We also present the temperature dependence of the conductance vs voltage curve and thereby the temperature dependence of the gap.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2007년 추계학술발표대회 개요집
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• pp.26-28
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• 2007

This research is concerned with a study of failure strength evaluation on heat element gap at resistance welding. The failure strength of resistance welded joint is changed by welding factor like as current(power level), welding time(total energy), pressure etc. and another heat element factor like as number of element line, element gap etc. Tensile-shear tests were carried out with the single-lap specimen using polypropylene(PP). The failure mechanism and optimization of gap was discussed in order to explain the tensile-shear strength evaluation on heat element gap at resistance welding. Orthogonal array was used by fractional factorial design for efficient experiments.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2239-2241
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• 1999

The most important question is how to use which kind of switch in pulsed power generation. There are many kinds of commercial closing switches, which have advantages and disadvantages. The most popular closing switch is the spark gap, but it has a disadvantage in life time, because of erosion of electrodes by arc heating. The Rotary Arc Gap (RAG) switch, especially Walkie-Edgar type RAG switch, was proposed to solve such problems in spark gap. It has a simple and special structure for arc moving caused from self-induced electromagnetic force, because moving arc makes less erosion on the electrodes. In this study we have made an Walkie-Edgar type RAG switch, tested the switching with capacitive energy storage system, and measured rotating arc speed in different peak current.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2008년도 동계학술발표대회 논문집
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• pp.55-60
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• 2008

Turbulent flow characteristics on the gap of two parallel channels are investigated using LES(large eddy simulation) approach. Two parallel channels have the same cross-section area and are connected by the narrow channel named the gap. Turbulent flow near the gap makes the flow pulsation along the streamwise direction of two channels. The flow condition is the Reynolds number of $2.5{\times}10^{-5}$. We compared the predicted results with the previous experimental results and presented the axial mean velocity, turbulent intensities, Reynolds shear stresses and turbulent kinetic energy.

• KEPCO Journal on Electric Power and Energy
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• 제5권3호
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• pp.197-200
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• 2019

We report on electrochemical signal amplification using gap electrodes based on the redox cycling between gap electrodes. The distance between electrodes was controlled from $2{\mu}m$ to a few hundreds of nanometer by chemical deposition of reduced Au ion on the pre-defined electrodes. Enhanced redox current of ferri/ferrocyanide was obtained by redox cycling between the two working electrodes. The faradaic current is amplified about a thousand times in this redox system. Since the signal amplification is due to the shortened diffusion length between the two electrodes, the narrower the nanogap was, the better detection limit, calibration sensitivity, and dynamic range. The experimental results were discussed on the basis of the cyclic voltammetry (CV), atomic force microscope (AFM) and scanning electron microscope (SEM) measurements.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.128.1-128.1
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• 2016

Nitrided-metal gates on the high-${\kappa}$ dielectric material are widely studied because of their use for sub-20nm semiconductor devices and the academic interest for the evanescent states at the Si/insulator interface. Issues in these systems with the Si substrate are the electron mobility degradation and the reliability problems caused from N defects that permeates between the Si and the $SiO_2$ buffer layer interface from the nitrided-gate during the gate deposition process. Previous studies proposed the N defect structures with the gap states at the Si band gap region. However, recent experimental data shows the possibility of the most stable structure without any N defect state between the bulk Si valence band maximum (VBM) and conduction band minimum (CBM). In this talk, we present a new type of the N defect structure and the electronic structure of the proposed structure by using the first-principles calculation. We find that the pair structure of N atoms at the $Si/SiO_2$ interface has the lowest energy among the structures considered. In the electronic structure, the N pair changes the eigenvalue of the silicon-induced gap state (SIGS) that is spatially localized at the interface and energetically located just above the bulk VBM. With increase of the number of N defects, the SIGS gradually disappears in the bulk Si gap region, as a result, the system gap is increased by the N defect. We find that the SIGS shift with the N defect mainly originates from the change of the kinetic energy part of the eigenstate by the reduction of the SIGS modulation for the incorporated N defect.