• 제목/요약/키워드: energy bandgap

검색결과 207건 처리시간 0.026초

Characterizations of i-a-Si:H and p-a-SiC:H Film using ICP-CVD Method to the Fabrication of Large-area Heterojunction Silicon Solar Cells

  • Jeong, Chae-Hwan;Jeon, Min-Sung;Kamisako, Koichi
    • Transactions on Electrical and Electronic Materials
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    • 제9권2호
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    • pp.73-78
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    • 2008
  • We investigated for comparison of large-area i-a-Si:H and p-a-SiC:H film quality like thickness uniformity, optical bandgap and surface roughness using both ICP-CVD and PECVD on the large-area substrate(diameter of 100 mm). As a whole, films using ICP-CVD could be achieved much uniform thickness and bandgap of that using PECVD. For i-a-Si:H films, its uniformity of thickness and optical bandgap were 2.8 % and 0.38 %, respectively. Also, thickness and optical bandgap of p-a-SiC:H films using ICP-CVD could be obtained at 1.8 % and 0.3 %, respectively. In case of surface roughness, average surface roughness (below 5 nm) of ICP-CVD film could be much better than that (below 30 nm) of PECVD film. HIT solar cell with 2 wt%-AZO/p-a-SiC:H/i-a-Si:H/c-Si/Ag structure was fabricated and characterized with diameter of 152.3 mm in this large-area ICP-CVD system. Conversion efficiency of 9.123 % was achieved with a practical area of $100\;mm\;{\times}\;100\;mm$, which can show the potential to fabrication of the large-area solar cell using ICP-CVD method.

Electronic properties of monolayer silicon carbide nanoribbons using tight-binding approach

  • Chuan, M.W.;Wong, Y.B.;Hamzah, A.;Alias, N.E.;Sultan, S. Mohamed;Lim, C.S.;Tan, M.L.P.
    • Advances in nano research
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    • 제12권2호
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    • pp.213-221
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    • 2022
  • Silicon carbide (SiC) is a binary carbon-silicon compound. In its two-dimensional form, monolayer SiC is composed of a monolayer carbon and silicon atoms constructed as a honeycomb lattice. SiC has recently been receiving increasing attention from researchers owing to its intriguing electronic properties. In this present work, SiC nanoribbons (SiCNRs) are modelled and simulated to obtain accurate electronic properties, which can further guide fabrication processes, through bandgap engineering. The primary objective of this work is to obtain the electronic properties of monolayer SiCNRs by applying numerical computation methods using nearest-neighbour tight-binding models. Hamiltonian operator discretization and approximation of plane wave are assumed for the models and simulation by applying the basis function. The computed electronic properties include the band structures and density of states of monolayer SiCNRs of varying width. Furthermore, the properties are compared with those of graphene nanoribbons. The bandgap of ASiCNR as a function of width are also benchmarked with published DFT-GW and DFT-GGA data. Our nearest neighbour tight-binding (NNTB) model predicted data closer to the calculations based on the standard DFT-GGA and underestimated the bandgap values projected from DFT-GW, which takes in account the exchange-correlation energy of many-body effects.

유연기판을 이용한 고효율 나노결정질 실리콘 박막 태양전지 제조 (Fabrication of Highly Efficient Nanocrystalline Silicon Thin-Film Solar Cells Using Flexible Substrates)

  • 장은석;김솔지;이지은;안승규;박주형;조준식
    • Current Photovoltaic Research
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    • 제2권3호
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    • pp.103-109
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    • 2014
  • Highly efficient hydrogenated nanocrystalline silicon (nc-Si:H) thin-film solar cells were prepared on flexible stainless steel substrates using plasma-enhanced chemical vapor deposition. To enhance the performance of solar cells, material properties of back reflectors, n-doped seed layers and wide bandgap nc-SiC:H window layers were optimized. The light scattering efficiency of Ag back reflectors was improved by increasing the surface roughness of the films deposited at elevated substrate temperatures. Using the n-doped seed layers with high crystallinity, the initial crystal growth of intrinsic nc-Si:H absorber layers was improved, resulting in the elimination of the defect-dense amorphous regions at the n/i interfaces. The nc-SiC:H window layers with high bandgap over 2.2 eV were deposited under high hydrogen dilution conditions. The vertical current flow of the films was enhanced by the formation of Si nanocrystallites in the amorphous SiC:H matrix. Under optimized conditions, a high conversion efficiency of 9.13% ($V_{oc}=0.52$, $J_{sc}=25.45mA/cm^2$, FF = 0.69) was achieved for the flexible nc-Si:H thin-film solar cells.

High Molecular Weight Conjugated Polymer Thin Films with Enhanced Molecular Ordering, Obtained via a Dipping Method

  • Park, Yeong Don
    • Bulletin of the Korean Chemical Society
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    • 제34권11호
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    • pp.3340-3344
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    • 2013
  • The fabrication of polymer field-effect transistors with good electrical properties requires the minimization of molecular defects caused by low molecular weight (MW) fractions of a conjugated polymer. Here we report that the electrical properties of a narrow bandgap conjugated polymer could be dramatically improved as a result of dipping a thin film into a poor solvent. The dipping time in hexanes was controlled to efficiently eliminate the low molecular weight fractions and concomitantly improve the molecular ordering of the conjugated polymer. The correlation between the structural order and the electrical properties was used to optimize the dipping time and investigate the effects of the low MW fraction on the electrical properties of the resulting thin film.

Atomistic simulation of surface passivated wurtzite nanowires: electronic bandstructure and optical emission

  • Chimalgi, Vinay U.;Nishat, Md Rezaul Karim;Yalavarthi, Krishna K.;Ahmed, Shaikh S.
    • Advances in nano research
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    • 제2권3호
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    • pp.157-172
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    • 2014
  • The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.

Hydrothermally synthesized Al-doped BiVO4 as a potential antibacterial agent against methicillin-resistant Staphylococcus aureus

  • Vicas, Charles Sundar;Keerthiraj, Namratha;Byrappa, Nayan;Byrappa, Kullaiah
    • Environmental Engineering Research
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    • 제24권4호
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    • pp.566-571
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    • 2019
  • One-pot hydrothermal route was adopted to synthesize Al:BiVO4, at 4 h and 8 h reaction durations, by adding 1% aluminiumoxide powder (w/v) to the precursors. The products were investigated using several characterization techniques that conform a significant morphological change and a decrease in bandgap energy of the materials upon Al modification of scheelite monoclinic bismuth vanadate matrix at both hydrothermal durations. Antibacterial experiments were performed against methicillin-resistant Staphylococcus aureus in visible light condition to harness the photoxidation property of Al-doped BiVO4 and compare to that of unaltered BiVO4. Minimum inhibitory concentration of the synthesized materials was identified. The results indicate that Al-doping on BiVO4 has a significant effect on its photocatalytic antibacterial performance. Al:BiVO4 synthesized at 8 h hydrothermal treatment parades excellent sunlight-driven photocatalysis compared to the one synthesized at 4 h.

Characterization of Highly Conducting ZnMgBeGaO/Ag/ZnMgBeGaO Transparent Conductive Multilayer Films with UV Energy Bandgap

  • Le, Ngoc Minh;Hoang, Ba Cuong;Lee, Byung-Teak
    • 한국재료학회지
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    • 제27권12호
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    • pp.695-698
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    • 2017
  • ZnMgBeGaO/Ag/ZnMgBeGaO multilayer structures were sputter grown and characterized in detail. Results indicated that the electrical properties of the ZnMgBeGaO films were significantly improved by inserting an Ag layer with proper thickness (~ 10 nm). Structures with thicker Ag films showed much lower optical transmission, although the electrical conductivity was further improved. It was also observed that the electrical properties of the multilayer structure were sizably improved by annealing in vacuum (~35 % at $300^{\circ}C$). The optimum ZnMgBeGaO(20nm)/Ag(10nm)/ZnMgBeGaO(20nm) structure exhibited an electrical resistivity of ${\sim}2.6{\times}10^{-5}{\Omega}cm$ (after annealing), energy bandgap of ~3.75 eV, and optical transmittance of 65 % ~ 95 % over the visible wavelength range, representing a significant improvement in characteristics versus previously reported transparent conductive materials.

a-SiOx window layer의 특성에 따른 비정질 실리콘 박막태양전지 설계 simulation 실험

  • 박승만;공대영;이준신
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.302-302
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    • 2010
  • 비정질 실리콘 박막 태양전지의 설계에 있어서 빛을 처음 받아들이는 p-layer는 전체적인 태양전지 특성에 큰 영향을 준다. 본 논문에서는 window layer의 gas flow rate 변화에 따른 특성이 태양전지에 미치는 영향에 대한 simulation을 수행하였다. 가변 조건으로는 window layer의 산소와 붕소 양에 따른energy bandgap과 conductivity 그리고 activation energy를 단계별로 변화시켜 simulation을 수행하였다. Simulation 결과 산소와 붕소의 양에 따른 window layer의 특성은 태양전지의 특성에 큰 영향을 끼친다. 본 연구는 simulation data를 기반으로 real device 제작하는데 큰 도움이 될 것이다.

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밴드갭이 제어된 TiO2 를 이용한 자외선 차단제의 블루라이트 차단 및 SPF 부스팅 효과 (The Effect of Blue Light Interception and SPF Boosting of Sunscreen Prepared with Bandgap-controlled TiO2)

  • 왕성은;윤정경;정귀수;계성봉;노호식;정대수
    • 대한화장품학회지
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    • 제49권2호
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    • pp.159-167
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    • 2023
  • 이산화티타늄(TiO2)은 일반적으로 선크림 제제에 사용되어 빛의 물리적 산란 작용에 의해 피부 표면을 보호하고 유해한 자외선(UV)의 침투를 방지한다. 그러나 불활성 미네랄 성분으로 인해 피부에 사용시 백탁현상을 유발할 수 있다는 단점이 있다. 또한 백탁현상을 없애기 위해 TiO2 입자를 나노화 하면 가시광선 투과율을 증가시켜 백탁 현상을 감소시키지만 알레르기 염증과 같은 심각한 피부 트러블을 유발할 수 있다. 이러한 문제를 극복하기 위해 본 연구에서는 산소 결핍 구조 및 질소량 제어를 이용하여 TiO2의 밴드갭을 제어하고, 결과적으로 피부 맞춤형 유색 TiO2를 개발하였다. 이는 백탁 현상을 감소시킬 수 있을 뿐만 아니라 활성산소를 유발하여 피부 노화를 촉진시키는 것으로 알려진 블루라이트를 효과적으로 차단할 수 있다. 본 연구에서 제안된 밴드갭 제어 TiO2 화합물은 저자극이고 스펙트럼이 넓으며 환경친화적이다. 또한 이는 자외선 차단제의 sun protection factor (SPF)를 획기적으로 향상시켜 블루라이트 차단 제품에 적용할 수 있을 것으로 기대된다.