• Transactions of the Korean Society of Mechanical Engineers A
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• v.40 no.8
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• pp.737-742
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• 2016

An elastomer (especially PDMS) sponge is considered to be a promising selective absorber in cleaning up oil spills. The performance of a PDMS sponge in capturing and separating oil from (sea) water depends on several parameters such as surface roughness, physicochemical treatments, and hydrostatic stability. Here, we first present a method of fabricating the PDMS sponges having numerous micro-sized pores that act as absorption and storage spaces for the target material, and then we report an experimental effort undertaken to control the surface physicochemistry (i.e., hydrophobicity or hydrophilicity) of the PDMS sponges by adjusting the size of the pores and the concentration of the surfactant (i.e., silwet L-77). From the experimental results, we develop an in-depth understanding of the mechanism for controlling the surface physicochemistry of PDMS using water-soluble micro-sized particles and a surfactant. The surface energy and absorbing behavior of the PDMS sponges are also extensively discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.398.1-398.1
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• 2014

The $Cu_2ZnSnSe_4$ (CZTSe) thin films solar cell is one of the next generation candidates for photovoltaic materials as the absorber of thin film solar cells because it has optimal bandgap (Eg=1.0eV) and high absorption coefficient of $10^4cm^{-1}$ in the visible length region. More importantly, CZTSe consists of abundant and non-toxic elements, so researches on CZTSe thin film solar cells have been increasing significantly in recent years. CZTSe thin film has very similar structure and properties with the CIGS thin film by substituting In with Zn and Ga with Sn. In this study, As-deposited CZTSe thin films have been deposited onto soda lime glass (SLG) substrates at different deposition condition using Pulsed Laser Deposition (PLD) technique without post-annealing process. The effects of deposition conditions (deposition time, deposition temperature) onto the structural, compositional and optical properties of CZTSe thin films have been investigated, without experiencing selenization process. The XRD pattern shows that quaternary CZTSe films with a stannite single phase. The existence of (112), (204), (312), (008), (316) peaks indicates all films grew and crystallized as a stannite-type structure, which is in a good agreement with the diffraction pattern of CZTSe single crystal. All the films were observed to be polycrystalline in nature with a high (112) predominant orientation at $2{\theta}{\sim}26.8^{\circ}$. The carrier concentration, mobility, resistivity and optical band gap of CZTSe thin films depending on the deposition conditions. Average energy band gap of the CZTSe thin films is about 1.3 eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.125-129
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• 2005

Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

• Journal of Surface Science and Engineering
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• v.51 no.2
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• pp.126-132
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• 2018

SnS thin films with different substrate temperatures ($150 {\sim}300^{\circ}C$) as process parameters were grown on soda-lime glass substrates by RF magnetron sputtering. The effects of substrate temperature on the structural and optical properties of SnS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and Ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR). All of the SnS thin films prepared at various substrate temperatures were polycrystalline orthorhombic structures with (111) planes preferentially oriented. The diffraction intensity of the (111) plane and the crystallite size were improved with increasing substrate temperature. The three major peaks (189, 222, $289cm^{-1}$) identified in Raman were exactly the same as the Raman spectra of monocrystalline SnS. From the XRD and Raman results, it was confirmed that all of the SnS thin films were formed into a single SnS phase without impurity phases such as $SnS_2$ and $Sn_2S_3$. In the optical transmittance spectrum, the critical wavelength of the absorption edge shifted to the long wavelength region as the substrate temperature increased. The optical bandgap was 1.67 eV at the substrate temperature of $150^{\circ}C$, 1.57 eV at $200^{\circ}C$, 1.50 eV at $250^{\circ}C$, and 1.44 eV at $300^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.389-389
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• 2012

Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.75-79
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• 2015

Recently, $Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) has been received a tremendous attraction as light absorber material in thin film solar cells (TFSCs), because of its earth abundance, inexpensive and non-toxic constituents and versatile material characteristics. Kesterite CZTSSe thin films were synthesized by sulfo-selenization of sputtered Cu/Sn/Zn stacked metallic precursors. The sulfo-selenization of Cu/Sn/Zn stacked metallic precursor thin films has been carried out in a graphite box using rapid thermal annealing (RTA) technique. Annealing process was done under sulfur and selenium vapor pressure using Ar gas at $520^{\circ}C$ for 10 min. The effect of tuning Se/(S+Se) precursor composition ratio on the properties of CZTSSe films has been investigated. The XRD, Raman, FE-SEM and XRF results indicate that the properties of sulfo-selenized CZTSSe thin films strongly depends on the Se/(S+Se) composition ratio. In particular, the CZTSSe TFSCs with Se/(S+Se) = 0.37 exhibits the best power conversion efficiency of 4.83% with $V_{oc}$ of 467 mV, $J_{sc}$ of $18.962mA/cm^2$ and FF of 54%. The systematic changes observed with increasing Se/(S+Se) ratio have been discussed in detail.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.4
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• pp.2966-2970
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• 2015

Recently, solar light power generation is widely extended by support policy to regeneration energy. However generation efficiency is decreased when solar module maintain higher than certain point temperature. Therefore, it is need to maintenance under certain point temperature. An method of solving this problem, this paper is developed geothermal exchanger for efficiency improvement of solar cell module. Geothermal exchanger consisted of heat absorber of solar cell module and heat conductor and radiator. Heat of solar cell module is radiated in the earth by geothermal exchanger. An a result, geothermal exchanger is increased generation amount of solar cell module and experiment result showed costs to about 36% increment of generation power.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.8
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• pp.1-11
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• 2002

A multi-section DFB-LD shows optical bistability subject to externally injected light signal, then it has potential applications such as wavelength conversion and optical logic gates. In this paper, we have studied the optical bistability in multi-section DFB-LD using split-step time-domain model. It is confirmed that the multi-section DFB-LD, which is excited inhomogeneously, shows bistability. The optical bistable characteristics are investigated when input light is injected into a absorptive region. Simulation results show that multi-section DFB-LD works as a flip-flop depending on the set-reset optical pulse which has a few ns in switching time and a few pj in switching energy, so that it can act as a optical logic device. Besides, if we change the carrier lifetime and the differential gain coefficient, it is expected that the response time of optical output signal can be reduced.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.29 no.7
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• pp.360-365
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• 2017

Recently, development efforts of triple-effect absorption chiller have been increased in order to improve the efficiency of double-effect absorption chiller. However, triple-effect absorption chiller has some disadvantages, including high corrosion characteristic of LiBr solution at high temperature of $200^{\circ}C$. Moreover, it is necessary to develop new components for operation under high pressure of 2 bars even though COP is increased to 1.6 or 1.7. The objective of this study was to introduce a new system by combining double effect absorption chiller with single effect absorption chiller with multi-generators using bypass flow of LiBr dilute solution to $3^{rd}$ generator to overcome the disadvantages of triple-effect chiller and improve energy efficiency. Results indicate that the new absorption cycle had a much higher efficiency than double-effect chiller system, showing significant improvement when bypass solution flow rate of 25% was applied to the $3^{rd}$ generator using the main dilute solution of the absorber. The COP of the new chiller system was found to be 1.438, which was 21.7% higher than that (1.18) of the present double-effect system. The COP was decreased when solution by-pass rate to the $3^{rd}$ generator was increased. In addition, lower cooling water temperature caused higher COP. Therefore, the multi-generator system with by-pass solution might be an excellent chiller alternative to triple-effect absorption chiller with higher efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.755-759
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• 2011

$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.